Abstract: A display is disclosed. The display comprises a panel, a data driver and a scan driver. The panel comprises pixels, data lines and scan lines. The data lines transmit data signals to the pixels, and the scan lines transmit scan signals to the pixels. The data driver provides the data signals, and the scan driver provides the scan signals. The scan driver comprises a shift register circuit. The shift register circuit comprises an i+1th stage carry shift register, an ith stage carry shift register and a jth stage buffer shift register. The ith stage carry shift register generates an i+1th start signal to start the i+1th stage carry shift register, so that the i+1th stage carry shift register generates an i+2th start signal. The i+1th start signal starts the jth stage buffer shift register to generate a jth output signal.

Abstract: An elevating mechanism of a projection apparatus includes a housing, a guide slot, an adjustable foot mount, at least one resilient member, and a sliding arm. The guide slot is formed on a surface of the housing and having multiple sections to form a sliding path. At least one section has multiple teeth, and a recess is formed between each two adjacent teeth. The sliding arm has a fixed end and a free end, the fixed end is fixed on the adjustable foot mount, and the free end is slidably coupled to the guide slot. When the sliding arm slides on the section having the teeth, the free end of the sliding arm engages with any of the recesses to hold the adjustable foot mount at a selected position.

Abstract: An image transforming device transforms a part of a captured image of an object based on a predetermined type of transformation. The image transforming device includes an obtaining unit that obtains the captured image of the object, a detecting unit that detects characteristic information from the captured image of the object, a grid point setting unit that sets grid points for the captured image, and setting movement information of the grid points based on the control points and the movement information of the control points, and an image transforming unit that transforms an image area by moving the grid points based on the movement information of the grid points.

Abstract: A method for fabricating a high voltage light emitting diode (HV LED) includes: calculating a total area of the HV LED according to a predetermined light emission luminance; calculating the number of sub-LEDs according to a predetermined operating voltage; subtracting, from the total area, areas of isolation trenches between the sub-LEDs, electrode areas and areas of series-connected conductive leads between the sub-LEDs, and then dividing the difference obtained through the subtraction by the number of the sub-LEDs, so as to calculate an effective light emission area of each of the sub-LEDs; and according to the effective light emission area, adjusting the area of a sub-LED having an electrode and the area of a sub-LED having no electrode, so as to enable the area of the sub-LED having an electrode to be greater than the area of the sub-LED having no electrode. An HV LED manufactured by the above method.

Abstract: A tomographic apparatus of this invention includes a dividing unit for dividing a sectional image into a pixel group including artifacts and a pixel group not including artifacts by carrying out an independent component analysis (ICA) of the artifacts, and a pixel group processing unit for applying a smoothing filter as a predetermined process relating to correction only with respect to the above pixel group including the artifacts, whereby a correction process is carried out to remove the artifacts. Thus, the artifacts can be removed stably.

Abstract: An image transforming device transforms a part of a captured image of an object based on a predetermined type of transformation. The image transforming device includes an obtaining unit that obtains the captured image of the object, a detecting unit that detects characteristic information from the captured image of the object, a grid point setting unit that sets grid points for the captured image, and setting movement information of the grid points based on the control points and the movement information of the control points, and an image transforming unit that transforms an image area by moving the grid points based on the movement information of the grid points.

Abstract: A display is disclosed. The display comprises a panel, a data driver and a scan driver. The panel comprises pixels, data lines and scan lines. The data lines transmit data signals to the pixels, and the scan lines transmit scan signals to the pixels. The data driver provides the data signals, and the scan driver provides the scan signals. The scan driver comprises a shift register circuit. The shift register circuit comprises an i+1th stage carry shift register, an ith stage carry shift register and a jth stage buffer shift register. The ith stage carry shift register generates an i+1th start signal to start the i+1th stage carry shift register, so that the i+1th stage carry shift register generates an i+2th start signal. The i+1th start signal starts the jth stage buffer shift register to generate a jth output signal.

Abstract: A tomographic apparatus of this invention includes a dividing unit for dividing a sectional image into a pixel group including artifacts and a pixel group not including artifacts by carrying out an independent component analysis (ICA) of the artifacts, and a pixel group processing unit for applying a smoothing filter as a predetermined process relating to correction only with respect to the above pixel group including the artifacts, whereby a correction process is carried out to remove the artifacts. Thus, the artifacts can be removed stably.

Abstract: An adaptor device is provided for connecting and accessing data cards of various specifications and includes a data card insertion structure, a cover board, and a carrier board. The data card insertion structure forms at least one first insertion slot for the insertion of the carrier board. The carrier board forms at least one data card carrying section for carrying at least one selected data card. The cover board is mounted to a top surface of the data card insertion structure. An underside of the cover board is provided, at a predetermined position, with at least one set of signal contact elements. When the carrier board is inserted in the first insertion slot, a signal contact section of the data card is electrically connectable with the signal contact elements of the cover board for direct output through a signal connection port of the cover board or for output to a computer device via a signal connection port of the data card insertion structure.

Abstract: An adaptor device is provided for connecting and accessing data cards of various specifications and includes a data card insertion structure, a cover board, and a carrier board. The data card insertion structure forms at least one first insertion slot for the insertion of the carrier board. The carrier board forms at least one data card carrying section for carrying at least one selected data card. The cover board is mounted to a top surface of the data card insertion structure. An underside of the cover board is provided, at a predetermined position, with at least one set of signal contact elements. When the carrier board is inserted in the first insertion slot, a signal contact section of the data card is electrically connectable with the signal contact elements of the cover board for direct output through a signal connection port of the cover board or for output to a computer device via a signal connection port of the data card insertion structure.

Abstract: A method for manufacturing a light-emitting diode (LED) is described. The method comprises: providing a temporary substrate; forming an illuminant epitaxial structure on the temporary substrate; forming a first transparent conductive layer on the illuminant epitaxial structure; forming a metal substrate on the first transparent conductive layer; forming an adhesion layer on the metal substrate; providing a supporting substrate, wherein the supporting substrate is connected to the metal substrate by the adhesion layer; removing the temporary substrate, so as to expose a surface of the illuminant epitaxial structure; forming a second transparent conductive layer on the exposed surface of the illuminant epitaxial structure; and forming an electrode on a portion of the second transparent conductive layer.

Abstract: A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a second transparent conductive layer stacked in sequence, and an electrode located on a portion of the second transparent conductive layer. A thickness of the metal substrate is between 30 ?m and 150 ?m. In addition, the light-emitting diode can further comprises a supporting substrate and an adhesive layer. The adhesive layer is located between the supporting substrate and the metal substrate to adhere the supporting substrate onto the metal substrate.

Abstract: A method for manufacturing a light-emitting diode (LED) is described. The method comprises: providing a temporary substrate; forming an illuminant epitaxial structure on the temporary substrate; forming a first transparent conductive layer on the illuminant epitaxial structure; forming a metal substrate on the first transparent conductive layer; forming an adhesion layer on the metal substrate; providing a supporting substrate, wherein the supporting substrate is connected to the metal substrate by the adhesion layer; removing the temporary substrate, so as to expose a surface of the illuminant epitaxial structure; forming a second transparent conductive layer on the exexposed surface of the illuminant epitaxial structure; and forming an electrode on a portion of the second transparent conductive layer.

Abstract: A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a second transparent conductive layer stacked in sequence, and an electrode located on a portion of the second transparent conductive layer. A thickness of the metal substrate is between 30 ?m and 150 ?m. In addition, the light-emitting diode can further comprises a supporting substrate and an adhesive layer. The adhesive layer is located between the supporting substrate and the metal substrate to adhere the supporting substrate onto the metal substrate.

Abstract: A double &dgr;-doped In0.34 Al0.66As0.85 Sb0.15/InP heterostructure field-effect transistor has been successfully grown by metalorganic chemical vapor deposition for the first time. Electron mobilities can be enhanced without sacrificing the carrier densities. A turn-on voltage as high as 1 V along with an extremely low gate reverse leakage current of 111 &mgr;A/mm at Vgs=−40V is achieved. The three-terminal on-and off-state breakdown voltages are as high as 40.8V and 16.1V, respectively. The output conductance is as low as 1.8 mS/mm even when the drain-to-source voltage is 15V. The gds is significantly smaller than that of our previously reported InAlAsSb/InGaAs/InP HFET. These characteristics are attributed to the use of the coupled &dgr;-doped structure, InP channel, In0.34 Al0.66As0.85 Sb0.15 Schottky layer, and to the large conduction-band discontinuity (&Dgr;Ec) at the InAlAsSb/InP heterojunction.