Abstract: The present invention discloses an anti-aging composition, which includes: (a) isolated lactic acid bacterial strains or a fermented product thereof; and (b) an excipient, a diluent, or a carrier; wherein the isolated lactic acid bacterial strains include: Bifidobacterium bifidum VDD088 strains, Bifidobacterium breve Bv-889 strains, and Bifidobacterium longum BLI-02 strains. The present invention further provides a method for preventing aging by administering the foregoing anti-aging composition to a subject in need thereof.

Abstract: A method of performing automatic tuning on a deep learning model includes: utilizing an instruction-based learned cost model to estimate a first type of operational performance metrics based on a tuned configuration of layer fusion and tensor tiling; utilizing statistical data gathered during a compilation process of the deep learning model to determine a second type of operational performance metrics based on the tuned configuration of layer fusion and tensor tiling; performing an auto-tuning process to obtain a plurality of optimal configurations based on the first type of operational performance metrics and the second type of operational performance metrics; and configure the deep learning model according to one of the plurality of optimal configurations.

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

Abstract: Disclosed herein is a probiotic composition that includes Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9, which are deposited at the China Center for Type Culture Collection (CCTCC) respectively under accession numbers CCTCC M 2011127, CCTCC M 2011128, and CCTCC M 2014588. A number ratio of Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9 ranges from 1:0.1:0.1 to 1:1:8. Also disclosed herein is use of the probiotic composition for alleviating type 1 diabetes mellitus (T1DM).

Abstract: Disclosed herein is a method for alleviating atopic dermatitis using a composition containing at least one lactic acid bacterial strain. The at least one lactic acid bacterial strain is selected from the group consisting of Lactobacillus salivarius subsp. salicinius AP-32 which is deposited at the China Center for Type Culture Collection (CCTCC) under an accession number CCTCC M 2011127, and Bifidobacterium animalis subsp. lactis CP-9 which is deposited at the CCTCC under an accession number CCTCC M 2014588.

Abstract: The invention provides a method of increasing an amount of oral immunoglobulin A (IgA) and/or inhibiting oral pathogens in a subject in need thereof, which utilizes a composition including a therapeutically effective amount of probiotics as an effective ingredient. The probiotics include Lactobacillus plantarum LPL28, which can efficiently increase the amount of oral IgA and/or inhibit the oral pathogens, and thus have a potential to prevent teeth cavities and/or periodontal diseases.

Abstract: The present invention provides a lactic acid bacterial composition for inhibiting the activity of Escherichia coli and/or treating or preventing jaundice, the composition including: a Bifidobacterium animalis subsp. lactis CP-9 strain and a Lactobacillus salivarius subsp. salicinius AP-32 strain. The present invention further provides a method for inhibiting growth of Escherichia coli, the method including the step(s) of: administering the foregoing lactic acid bacterial composition to a subject in need thereof. The present invention additionally provides a method for treating or preventing jaundice, the method including the step(s) of: administering the foregoing lactic acid bacterial composition to a subject in need thereof.

Abstract: Disclosed herein is a method for alleviating atopic dermatitis using a composition containing at least one lactic acid bacterial strain. The at least one lactic acid bacterial strain is selected from the group consisting of Lactobacillus salivarius subsp. salicinius AP-32 which is deposited at the China Center for Type Culture Collection (CCTCC) under an accession number CCTCC M 2011127, and Bifidobacterium animalis subsp. lactis CP-9 which is deposited at the CCTCC under an accession number CCTCC M 2014588.

Abstract: The present invention discloses an anti-aging composition, which includes: (a) isolated lactic acid bacterial strains or a fermented product thereof; and (b) an excipient, a diluent, or a carrier; wherein the isolated lactic acid bacterial strains include: Bifidobacterium bifidum VDD088 strains, Bifidobacterium breve Bv-889 strains, and Bifidobacterium longum BLI-02 strains. The present invention further provides a method for preventing aging by administering the foregoing anti-aging composition to a subject in need thereof.

Abstract: The present invention provides a lactic acid bacterial composition for inhibiting the activity of Escherichia coli and/or treating or preventing jaundice, the composition including: a Bifidobacterium animalis subsp. lactis CP-9 strain or a Lactobacillus salivarius subsp. salicinius AP-32 strain. The present invention further provides a method for inhibiting growth of Escherichia coli, the method including the step(s) of: administering the foregoing lactic acid bacterial composition to a subject in need thereof. The present invention additionally provides a method for treating or preventing jaundice, the method including the step(s) of: administering the foregoing lactic acid bacterial composition to a subject in need thereof.

Abstract: Disclosed herein is a probiotic composition that includes Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9, which are deposited at the China Center for Type Culture Collection (CCTCC) respectively under accession numbers CCTCC M 2011127, CCTCC M 2011128, and CCTCC M 2014588. A number ratio of Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9 ranges from 1:0.1:0.1 to 1:1:8. Also disclosed herein is use of the probiotic composition for alleviating type 1 diabetes mellitus (T1DM).

Abstract: The invention provides a method of increasing an amount of oral immunoglobulin A (IgA) and/or inhibiting oral pathogens in a subject in need thereof, which utilizes a composition including a therapeutically effective amount of probiotics as an effective ingredient. The probiotics include Lactobacillus plantarum LPL28, which can efficiently increase the amount of oral IgA and/or inhibit the oral pathogens, and thus have a potential to prevent teeth cavities and/or periodontal diseases.

Abstract: Disclosed herein is a probiotic composition including Lactobacillus salivarius subsp. salicinius AP-32 that is deposited at the China Center for Type Culture Collection (CCTCC) under an accession number CCTCC M 2011127, and Bifidobacterium longum subsp. longum OLP-01 that is deposited at the China General Microbiological Culture Collection Center (CGMCC) under an accession number CGMCC 17345. Also disclosed herein are use of at least one of the abovementioned lactic acid bacterial strains for treating obesity and/or an obesity-related disorder, and for inhibiting fat absorption.

Abstract: A manufacturing method of a semiconductor thin film transistor (TFT) and a display panel are provided. According to the manufacturing method, a substrate is provided. A semiconductor pattern is formed on the substrate. A first insulating layer is formed on the substrate and covers the semiconductor pattern. A first metal layer is formed on the first insulating layer, and the first insulating layer is located between the semiconductor pattern and the first metal layer. A half-tone mask photoresist pattern is formed on the first metal layer. The half-tone mask photoresist pattern exposes a portion of the first metal layer. The portion of the first metal layer exposed by the half-tone mask photoresist pattern is removed to form a gate. The gate covers a portion of the semiconductor pattern. A source and a drain are formed on the semiconductor pattern.

Abstract: An active device array substrate includes a substrate, first and second active devices, a gate insulation layer and an insulation barrier layer. The first and second active devices respectively includes first and second gate electrodes, first and second semiconductor blocks, first and second source electrodes, and first and second drain electrodes. A film layer of the second source electrode and the second drain electrode is the same with that of the first source electrode or the first drain electrode. The gate insulation layer is located between the first gate electrode and the first semiconductor block and between the second gate electrode and the second semiconductor block. The insulation barrier layer is disposed on the gate insulation layer, and covers the first semiconductor block. The insulation barrier layer has a first through hole for one of the first source electrode and the first drain electrode contacting the first semiconductor block.

Abstract: A processing method of a substrate is provided. The substrate is processed by a substrate processing apparatus. The substrate processing apparatus includes a reaction chamber and a secondary chamber surrounding the reaction chamber. The processing method includes: placing the substrate in the reaction chamber; performing a process to increase a pressure in the reaction chamber and a pressure in the secondary chamber, such that the pressure in the secondary chamber is between an atmospheric pressure and the pressure in the reaction chamber; increasing a temperature in the reaction chamber; and processing the substrate by a supercritical fluid in the reaction chamber.

Abstract: A thin film transistor and a method of fabricating the same are provided. The thin film transistor includes a channel layer, a source, a drain, an insulating layer and a gate. The channel layer is disposed on a substrate. The source and the drain are disposed separately on the channel layer. The insulating layer covers the source, the drain and the channel layer. The gate is disposed on the insulating layer, wherein two opposite sidewalls of the channel layer are respectively aligned to a sidewall of the source distant to the drain and a sidewall of the drain distant to the source. The thin film transistor of the invention improves the precision of alignment in the fabricating process, such that the film transistor has an excellent quality.

Abstract: A thin film coating system includes at least one first supporting roller, a coating device, and at least one drying device. The first supporting roller is configured to rotate based on a rotating central axis. The coating device has an opening. The opening of the coating device faces toward the first supporting roller. The coating device is configured to coat a flowable material toward the first supporting roller along a first direction through the opening. The drying device is located at a side of the rotating central axis adjacent to the coating device in the first direction and is configured to dry the flowable material.

Abstract: A processing method of a substrate is provided. The substrate is processed by a substrate processing apparatus. The substrate processing apparatus includes a reaction chamber and a secondary chamber surrounding the reaction chamber. The processing method includes: placing the substrate in the reaction chamber; performing a process to increase a pressure in the reaction chamber and a pressure in the secondary chamber, such that the pressure in the secondary chamber is between an atmospheric pressure and the pressure in the reaction chamber; increasing a temperature in the reaction chamber; and processing the substrate by a supercritical fluid in the reaction chamber.

Abstract: An active device array substrate includes a substrate, first and second active devices, a gate insulation layer and an insulation barrier layer. The first and second active devices respectively includes first and second gate electrodes, first and second semiconductor blocks, first and second source electrodes, and first and second drain electrodes. A film layer of the second source electrode and the second drain electrode is the same with that of the first source electrode or the first drain electrode. The gate insulation layer is located between the first gate electrode and the first semiconductor block and between the second gate electrode and the second semiconductor block. The insulation barrier layer is disposed on the gate insulation layer, and covers the first semiconductor block. The insulation barrier layer has a first through hole for one of the first source electrode and the first drain electrode contacting the first semiconductor block.