Abstract: A method for manufacturing a thin-film transistor is provided, including the following steps. A gate electrode is formed on a substrate. An insulating layer is formed on the gate electrode. A patterned active layer is formed on the insulating layer. A conductive layer having a thickness is formed on the patterned active layer and the insulating layer. The thickness of a first portion of the conductive layer that overlies the patterned active layer is reduced to leave the first portion of the conductive layer over the pattern active layer. The conductive layer is etched to expose the patterned active layer under the first portion of the conductive layer.

Abstract: A thin film transistor disposed on a substrate, includes a gate, a gate insulation layer, a first source/drain, a semiconductor layer and a second source/drain. The gate is disposed on the substrate. The gate insulation layer covers the gate and the substrate. The first source/drain is disposed on the gate insulation layer. The semiconductor layer is disposed above the gate, extends from the gate insulation layer to the first source/drain, and includes a first portion disposed on the first source/drain and a second portion connected to the first portion. An electrical conductivity of the first portion is higher than that of the second portion. The second source/drain covers and is in contact with the second portion. A manufacturing method of thin film transistor is further provided.

Abstract: A gate driving circuit is provided. The gate driving circuit includes a plurality of gate driving units sequentially coupled to each other. Each of the gate driving units includes a shift register and a de-multiplexer. The shift register receives a start pulse signal, and generates a first control signal and a second control signal according to the start pulse signal and a scan controlling signal, where when the shift register converts the first control signal into the second control signal, the shift register pulls down a voltage level of the first control signal according to the second control signal. The de-multiplexer receives a part of a plurality of clock signals for generating a plurality of gate signals sequentially according to the first control signal, where the clock signals are enabled sequentially, and enable periods of two sequential clock signals are partially overlapped with each other.

Abstract: A gate driving circuit is provided. The gate driving circuit includes a plurality of gate driving units sequentially coupled to each other. Each of the gate driving units includes a shift register and a de-multiplexer. The shift register receives a start pulse signal, and generates a first control signal and a second control signal according to the start pulse signal and a scan controlling signal, where when the shift register converts the first control signal into the second control signal, the shift register pulls down a voltage level of the first control signal according to the second control signal. The de-multiplexer receives a part of a plurality of clock signals for generating a plurality of gate signals sequentially according to the first control signal, where the clock signals are enabled sequentially, and enable periods of two sequential clock signals are partially overlapped with each other.

Abstract: A method for manufacturing a pixel structure is provided. A patterned semiconductor material layer, an insulation material layer, and a gate electrode material layer are formed in sequence on a substrate to form a stacked structure. A patterned photoresist layer is formed on the stacked structure by using a photomask. A portion of the stacked structure is removed to pattern the patterned semiconductor material layer into a patterned semiconductor layer by using the patterned photoresist layer as a mask. Another portion of the stacked structure is etched by using a portion of the patterned photoresist layer as a mask until a portion of the semiconductor layer in the stacked structure is exposed. Then, an exposed portion of the semiconductor layer is modified to increase a conductivity of the exposed portion of the semiconductor layer. Finally, the patterned photoresist layer is removed. A pixel structure manufactured by the method is provided.

Abstract: A pixel array includes a plurality of pixels. Each pixel has a first sub-pixel, a second sub-pixel, and a pair of third sub-pixels. The first sub-pixel of each pixel and the first sub-pixels of three adjacent pixels are arranged in a two by two array, the second sub-pixel of each pixel and the second sub-pixels of three adjacent pixels are arranged in a two by two array, and one of each of the third sub-pixels of each pixel and one of the third sub-pixels of three adjacent pixels are arranged in a two by two array. A scan line is connected to a switch unit of each of the sub-pixels in a pixel.

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a channel, a gate, a source, a drain and an etching stop layer. The channel is disposed above the substrate and is located between the etching stop layer and the source. The gate is disposed on the substrate and overlapped with the channel. The source is disposed between the channel and the substrate and electrically connected to the channel. The channel is disposed between the drain and the substrate. The etching stop layer is disposed between the drain and the channel and has a first through hole exposing a portion of the channel. The drain is filled in the first through hole of the etching stop layer and is electrically connected to the channel. The drain covers the channel completely.

Abstract: A double thin film transistor includes a first semiconductor layer, a gate, a second semiconductor layer, a first insulating layer, a second insulating layer, a first source, a first drain, a second source and a second drain. The first semiconductor layer is disposed over a substrate. The gate is disposed over the first semiconductor layer. The second semiconductor layer is disposed over the gate, and the first and second semiconductor layers are the same conductive type. The first insulating layer is disposed between the first semiconductor layer and the gate. The second insulating layer is disposed between the gate and the second semiconductor layer. The first source and the first drain are disposed between the substrate and the second insulating layer. The second source and the second drain are disposed over the second insulating layer.

Abstract: A display panel including a pixel array and a gate driver circuit is provided. The pixel array has a plurality of pixels. The gate driver circuit is used for providing a plurality of gate signals to the pixels and includes a plurality of shift registers and a plurality of demultiplexers. The shift registers respectively receive a first gate signal of the gate signals and a first clock signal of a plurality of clock signals to respectively provide a first control signal and a second control signal. The demultiplexers respectively receive a plurality of second clock signals of the clock signals, respectively turn-on according to the first control signal provided by the corresponding one of the shift registers, and respectively cut-off according to the second control signal provided by the corresponding one of the shift registers.

Abstract: The thin film transistor includes a gate, a gate insulating layer, a semiconductor layer, and a source and a drain. The gate insulating layer covers the gate. The semiconductor layer is located on the gate insulating layer which is disposed above the gate. The source and the drain are disposed above the gate insulating layer and are electrically connected to the semiconductor layer, respectively. The source and the drain are respectively located in different layers. A first contact resistance is existed between the semiconductor layer and the source, a second contact resistance is existed between the semiconductor layer and the drain, and. the first contact resistance is less than the second contact resistance.

Abstract: A thin film transistor including a gate, a channel, a stopper layer, a source and a drain is provided. The channel and the gate are overlapped. The stopper layer covers a portion of the channel and has a ring-shape hole exposing two opposite connecting portions of the channel. A portion of the stopper layer is disposed between the source and the channel and between the drain and the channel. The source and the drain are filled in the ring-shape hole of the stopper layer and electrically connected to the connecting portions of the channel. Moreover, a pixel structure including the thin film transistor is provided.

Abstract: A thin film transistor disposed on a substrate, includes a gate, a gate insulation layer, a first source/drain, a semiconductor layer and a second source/drain. The gate is disposed on the substrate. The gate insulation layer covers the gate and the substrate. The first source/drain is disposed on the gate insulation layer. The semiconductor layer is disposed above the gate, extends from the gate insulation layer to the first source/drain, and includes a first portion disposed on the first source/drain and a second portion connected to the first portion. An electrical conductivity of the first portion is higher than that of the second portion. The second source/drain covers and is in contact with the second portion. A manufacturing method of thin film transistor is further provided.

Abstract: A double thin film transistor includes a first semiconductor layer, a gate, a second semiconductor layer, a first insulating layer, a second insulating layer, a first source, a first drain, a second source and a second drain. The first semiconductor layer is disposed over a substrate. The gate is disposed over the first semiconductor layer. The second semiconductor layer is disposed over the gate, and the first and second semiconductor layers are the same conductive type. The first insulating layer is disposed between the first semiconductor layer and the gate. The second insulating layer is disposed between the gate and the second semiconductor layer. The first source and the first drain are disposed between the substrate and the second insulating layer. The second source and the second drain are disposed over the second insulating layer.

Abstract: A thin film transistor disposed on a substrate, includes a gate, a gate insulation layer, a first source/drain, a semiconductor layer and a second source/drain. The gate is disposed on the substrate. The gate insulation layer covers the gate and the substrate. The first source/drain is disposed on the gate insulation layer. The semiconductor layer is disposed above the gate, extends from the gate insulation layer to the first source/drain, and includes a first portion disposed on the first source/drain and a second portion connected to the first portion. An electrical conductivity of the first portion is higher than that of the second portion. The second source/drain covers and is in contact with the second portion. A manufacturing method of thin film transistor is further provided.

Abstract: The thin film transistor includes a gate, a gate insulating layer, a semiconductor layer, and a source and a drain. The gate insulating layer covers the gate. The semiconductor layer is located on the gate insulating layer which is disposed above the gate. The source and the drain are disposed above the gate insulating layer and are electrically connected to the semiconductor layer, respectively. The source and the drain are respectively located in different layers. A first contact resistance is existed between the semiconductor layer and the source, a second contact resistance is existed between the semiconductor layer and the drain, and. the first contact resistance is less than the second contact resistance.

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a channel, a gate, a source, a drain and an etching stop layer. The channel is disposed above the substrate and is located between the etching stop layer and the source. The gate is disposed on the substrate and overlapped with the channel. The source is disposed between the channel and the substrate and electrically connected to the channel. The channel is disposed between the drain and the substrate. The etching stop layer is disposed between the drain and the channel and has a first through hole exposing a portion of the channel. The drain is filled in the first through hole of the etching stop layer and is electrically connected to the channel. The drain covers the channel completely.

Abstract: A thin film transistor disposed above a carrying surface of a substrate is provided. The thin film transistor includes a gate, a first insulation layer, a channel, a source, a second insulation layer and a drain. The gate and the channel are overlapped with each other in a normal direction of the carrying surface. The first insulation layer is disposed between the channel and the gate. The source covers a portion of the channel and is electrically connected to the portion of the channel. The channel is located between the source and the first insulation layer in the normal direction. The source is disposed between the second insulation layer and the channel. The second insulation layer has a first hole exposing another portion of the channel. The drain is filled in the first hole and electrically connected to the another portion of the channel. Moreover, a pixel structure is provided.

Abstract: A thin film transistor including a gate, a channel, a stopper layer, a source and a drain is provided. The channel and the gate are overlapped. The stopper layer covers a portion of the channel and has a ring-shape hole exposing two opposite connecting portions of the channel. A portion of the stopper layer is disposed between the source and the channel and between the drain and the channel. The source and the drain are filled in the ring-shape hole of the stopper layer and electrically connected to the connecting portions of the channel. Moreover, a pixel structure including the thin film transistor is provided.

Abstract: The present provides a method for fabricating a thin film transistor including following steps. A substrate is provided. A gate is formed above the substrate. A first source is formed above the substrate. A channel is formed, in which one end of the channel contacts with the first source. A stop layer covering the one end of the channel and exposing another end of the channel is formed. A drain connected with the other end of the channel is formed. Moreover, the present invention also provides a thin film transistor fabricated by the method.

Abstract: The present provides a method for fabricating a thin film transistor including following steps. A substrate is provided. A gate is formed above the substrate. A first source is formed above the substrate. A channel is formed, in which one end of the channel contacts with the first source. A stop layer covering the one end of the channel and exposing another end of the channel is formed. A drain connected with the other end of the channel is formed. Moreover, the present invention also provides a thin film transistor fabricated by the method.