Abstract: A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.

Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

Abstract: A method of forming a material (e.g., ferroelectric) film, a method of manufacturing a capacitor, and a method of forming a semiconductor memory device using the method of forming the (e.g., ferroelectric) film are provided. Pursuant to an example embodiment of the present invention, a method of forming a ferroelectric film includes preparing a substrate, depositing an amorphous ferroelectric film on the substrate, and crystallizing the amorphous ferroelectric film by irradiating it with a laser beam. According to still another example embodiment of the present invention, a method of forming a ferroelectric film may reduce the thermal damage to other elements because the ferroelectric film may be formed at a temperature lower than about 500° C. to about 550° C.

Abstract: A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature of the insulating substrate during the depositing does not exceed 250° C. The method can produce a thin film transistor. The disclosed ion beam deposition method forms, at lower temperature and with low impurities, a film morphology with desired smoothness and grain size. Deposition of semiconductor films on low melting point substrates, such as plastic flexible substrates, is enables.

Abstract: Disclosed are wholly aromatic polyamide filament and a method of manufacturing the same, characterized in that, in the process of preparing the wholly aromatic polyamide polymer, the aromatic diamine, aromatic diacid chlrodie and polymerization solvent put into the reactor 20 are agitated by an agitation device which is installed in the reactor 20 and consists of: (i) a rotor 3 driven by a motor 2 and having a plurality of pins 3a; and (ii) a stator 4 having a plurality of pins 4a, wherein spin speed of the rotor 3 is controlled to 10 to 100 times of both of feeding rates for the aromatic diacid chloride and the aromatic diamine in the polymerization solvent into the reactor and, at the same time, contact frequency between the pins 3a and the pins 4a is regulated within a range of 100 to 1,000 Hz.

Abstract: Disclosed are wholly aromatic polyamide filament and a method of manufacturing the same, characterized in that, in a process of preparing wholly aromatic polyamide polymer, a multiple tubular feed pipe for polymeric monomer and polymerization solvent with specific construction of adjacent inner paths 11a and outer paths 11b which are alternately arranged one another is used to feed either aromatic diacid chloride A or aromatic diamine dissolved in the polymerization solvent B into a polymerization reactor 20 through corresponding one among the inner and outer paths 11a and 11b. The present invention is effective to progress uniform and homogeneous polymerization over all of area of a polymerization reactor 20 leading to reduction of deviation in degree of polymerization, since polymeric monomers are miscible and react together very well immediately after putting the monomers into the reactor 20.

Abstract: Provided is a method and apparatus for configuring and managing an overlay multicast data delivery tree in a transmission network having a SM (session manager) and at least one MA (multicast agent).

Abstract: The present invention relates to a multi-mode communication system and a method thereof. The multi-mode communication system uses a first mode among a plurality communication modes for accessing a first mobility control entity (MCE) among a plurality of MCEs, and communicates data with the first MCE. The multi-mode communication system receives a paging request that has been transmitted from a multi-mode control entity (MMCE) for accessing a second MCE from the first MCE and analyzes the paging request, and puts the first mode into a sleep mode and a second mode for accessing the second MCE into an awake mode based on the analysis. Subsequently, multi-mode UE accesses the second MCE by using the second mode in the awake mode. According to the present invention, an MMCE for multi-mode control is provided to integrate and manage an idle state for each access mode of multi-mode user equipment, thereby minimizing power consumption due to access of the multi-mode UE to a radio access system.

Abstract: Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.

Abstract: Disclosed are wholly aromatic polyamide filament and a method of manufacturing the same, characterized by comprising multi-stage injection of a coagulant with sulfuric acid concentration lowered sequentially stage by stage, to a spun material fed into a coagulant injection tank. The present invention enables increase of a spinning and take-up velocity without occurrence of thread cutting by uniformly and evenly coagulating surface and inside of the spun material. In addition, the present invention recovers the coagulant or water already used and reuses the recovered coagulant or water in the earlier stages, so that it has advantages of saving production costs and reducing environmental contamination. Accordingly, the wholly aromatic polyamide filament produced according to the present invention has high crystallinity X, large apparent crystal size ACS and reduced defects in the crystal itself, thereby exhibiting more improved physical properties such as strength and modulus.

Abstract: Provided is a method of manufacturing a driving-device for a unit pixel of an organic light emitting display having an improved manufacturing process in which the driving device can be manufactured with a smaller number of processes and in simpler processes.

Abstract: Provided is a method of manufacturing a thin film transistor, the method comprising: forming an amorphous silicon layer on a substrate; forming a polysilicon layer by crystallizing the amorphous silicon layer; forming a mask structure that masks a portion of the polysilicon; forming a source and a drain region and a channel region interposed between the source and the drain regions in the polysilicon layer; injecting impurities having a first concentration using an ion beam implantation into one end and the other end of the polysilicon layer which are not covered by the mask structure. The ends of the polysilicon layer with the mask thereon is then subjected to ion bombardment to increase the level of impurities in the source and drain regions while at the same time shrinking the size of the masked regions.

Abstract: An electrostatic latent image forming medium includes a frame, an imaging surface on which an electrostatic latent image is to be formed, the imaging surface being supported by the frame, and an alteration mechanism for altering the electrostatic latent image on the imaging surface, the alteration mechanism being between the frame and the imaging surface. When signals are selectively applied to the alteration mechanism, an electrostatic latent image with a potential different from a potential of its surrounding area is formed on the imaging surface.

Abstract: Provided are a driving device for a unit pixel of an organic light emitting display having an improved structure and a method of manufacturing the same.

Abstract: An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.

Abstract: Provided are a method of manufacturing a laterally crystallized semiconductor layer and a method of manufacturing a thin film transistor (TFT) using the method. The method of manufacturing the laterally crystallized semiconductor layer comprises: forming a semiconductor layer on a substrate; irradiating laser beams on the semiconductor layer; splitting the laser beams using a prism sheet comprising an array of a plurality of prisms, advancing the laser beams toward the semiconductor layer to alternately form first and second areas in the semiconductor layer so as to fully melt the first areas, wherein the laser beams are irradiated onto the first areas, and the laser beams are not irradiated onto the second areas; and inducing the first areas to be laterally crystallized using the second areas as seeds.

Abstract: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

Abstract: A method of degassing a thin layer and a method of manufacturing a silicon thin film includes applying microwaves to a silicon thin film deposited on a substrate to induce a resonance of impurities of H2, Ar, He, Xe, O2, and the like present in the silicon thin film so as to remove the impurities from the silicon thin film. A wavelength of the microwaves is equal to a natural frequency of an element of an object to be removed. According to a resonance of impurities induced by microwaves, the impurities can be very effectively removed from the silicon thin film so as to obtain a high quality silicon thin film. In particular, the microwaves are very suitable to be used in the manufacture of silicon thin films at low temperature.

Abstract: A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

Abstract: In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.