Abstract: Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.

Abstract: Provided is a method of manufacturing a driving-device for a unit pixel of an organic light emitting display having an improved manufacturing process in which the driving device can be manufactured with a smaller number of processes and in simpler processes.

Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

Abstract: A thin film transistor (TFT) that can prevent damage to a silicon layer under a gate electrode in an annealing process by using a first gate electrode having high thermal resistance and a second gate electrode having high reflectance and a method of manufacturing the TFT are provided. The method of manufacturing a TFT includes forming a double-layered gate electrode which includes a first gate electrode formed of a material having high thermal resistance and a second gate electrode formed of a metal having high optical reflectance on the first gate electrode, and forming a source and a drain by annealing doped regions on both sides of a silicon layer under the gate electrode by radiating a laser beam onto the entire upper surface of the silicon layer.

Abstract: A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and a Si02 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 A or more. An interface trap density of the Si02 can be as high as lo?/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.

Abstract: Example embodiments provide an atomic layer deposition apparatus and a method of depositing an atomic layer using the atomic layer deposition apparatus. The atomic layer deposition apparatus may include a reaction chamber, a substrate supporter installed in the reaction chamber to support a substrate, and a shower head that is disposed above the substrate supporter and has at least one nozzle set that simultaneously inject a first source gas, a second source gas, and a purge gas onto the substrate. The method of depositing an atomic layer may include moving at least one of the substrate and the shower head in a first direction and simultaneously depositing at least one first atomic layer and at least one second atomic layer on the substrate by injecting the first source gas, the second source gas, and the purge gas through the shower head while the moving operation is performed.

Abstract: Service continuity is provided between a 3GPP network and a non-3GPP network. When a mobile station having accepted service in the 3GPP network moves to the non-3GPP network or returns from the non-3GPP network to the 3GPP network, an interworking gateway is interworked with a GGSN through a universal tunnel using a packet data network, and accordingly a mobile subscriber may accept seamless service.

Abstract: The present invention relates to a method for guaranteeing service continuity between a 3GPP network and a non-3GPP network. According to the exemplary embodiment of the present invention, when a mobile station receiving a service from the 3GPP network moves to the non-3GPP network or it moves back to the 3GPP network from the non-3GPP network, an inter-working gateway inter-works with a SGSN or a GGSN through the 3GPP network to provide a seamless service to a mobile subscriber.

Abstract: Disclosed are wholly aromatic polyamide filament and a method of manufacturing the same, characterized in that, in a process of preparing wholly aromatic polyamide polymer, a multiple tubular feed pipe for polymeric monomer and polymerization solvent with specific construction of adjacent inner paths 11a and outer paths 11b which are alternately arranged one another is used to feed either aromatic diacid chloride A or aromatic diamine dissolved in the polymerization solvent B into a polymerization reactor 20 through corresponding one among the inner and outer paths 11a and 11b. The present invention is effective to progress uniform and homogeneous polymerization over all of area of a polymerization reactor 20 leading to reduction of deviation in degree of polymerization, since polymeric monomers are miscible and react together very well immediately after putting the monomers into the reactor 20.

Abstract: The present invention discloses a gateway and a terminal negotiating a QoS in a network interworking system. The terminal negotiates a QoS with a WLAN access point and establishes a WLAN access bearer. In addition, the terminal negotiates a QoS with the gateway for packet exchange through the WLAN access bearer. The gateway accepts a QoS according to a QoS of an external bearer, and the terminal and the gateway establish an I-WLAN bearer. Subsequently, the terminal negotiates a QoS with the gateway for packet exchange with an end terminal through the I-WLAN bearer. The gateway accepts the QoS depending on available resources of the external and I-WLAN bearers, and the terminal and the gateway establish an IP bearer.

Abstract: An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

Abstract: A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using inductively coupled plasma chemical vapor deposition (ICP-CVD). After the ICP-CVD, excimer laser annealing (ELA) is performed while increasing energy by predetermined steps. A poly-Si active layer and a SiO2 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 ? or more. An interface trap density of the SiO2 can be as high as 1011/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.

Abstract: Oxide semiconductor thin film transistors (TFT) and methods of manufacturing the same are provided. The methods include forming a channel layer on a substrate, forming source and drain electrodes at opposing sides of the channel layer, and oxidizing a surface of the channel layer by placing an oxidizing material in contact with the surface of the channel layer, reducing carriers on the surface of the channel layer. Due to the oxidizing agent treatment of the surface of the channel layer, excessive carriers that are generated naturally, or during the manufacturing process, may be more effectively controlled.

Abstract: A display device including an oxide semiconductor thin film transistor is provided. The display device includes at least one thin film transistor, and at least one storage capacitor. The storage capacitor includes a storage electrode formed of a transparent oxide semiconductor, and a pixel electrode over the storage electrode. The pixel electrode may be separated from the storage electrode by a desired distance.

Abstract: Methods of manufacturing an oxide semiconductor thin film transistor are provided. The methods include forming a gate on a substrate, and a gate insulating layer on the substrate to cover the gate. A channel layer, which is formed of an oxide semiconductor, may be formed on the gate insulating layer. Source and drain electrodes may be formed on opposing sides of the channel layer. The method includes forming supplying oxygen to the channel layer, forming a passivation layer to cover the source and drain electrodes and the channel layer, and performing an annealing process after forming the passivation layer.

Abstract: Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.

Abstract: A 3GPP-WLAN interworking system to which WLAN user equipment is accessed includes a WLAN access network including a WLAN access point, a 3GPP packet-switched service network including terminal equipment, a 3GPP core network connecting the WLAN access network and the 3GPP packet-switched service network, and a packet data gateway relaying the 3GPP core network and the 3GPP packet-switched service network. The WLAN user equipment negotiates a QoS according to a wireless environment with the WLAN access point to generate a WLAN bearer, negotiates a QoS according to a type of user data with the packet data gateway to generate a WLAN 3GPP IP access bearer, and negotiates a QoS according to data process performance of the terminal equipment with the terminal equipment to generate an end-to-end bearer.

Abstract: Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.

Abstract: Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.

Abstract: A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.