Abstract: According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.

Abstract: A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.

Abstract: Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn ??(Formula 1( Herein, M is a metal ion, A is an organic ligand which includes ?-substituted carboxylate, and n is a natural number.

Abstract: A thin film transistor array panel includes a source electrode and a drain electrode on an insulating substrate, an oxide semiconductor on the insulating substrate and overlapping the source electrode and the drain electrode, a passivation layer overlapping the oxide semiconductor and on the insulating substrate, a gate electrode on the passivation layer, and a pixel electrode connected to the drain electrode. The gate electrode and the pixel electrode include a same material. The oxide semiconductor is between the source electrode and the gate electrode, and between the drain electrode and the gate electrode in a cross-sectional view of the thin film transistor array panel.

Abstract: Provided is a method for manufacturing a film structure. The method for manufacturing the film structure n includes forming a layer of a precursor material on a substrate, preheating the precursor material, and irradiating the precursor material with microwave radiation to form the film structure.

Abstract: A thin film transistor array panel including an oxide semiconductor layer realizing excellent stability and electrical characteristics and an easy method of manufacturing the same are provided. A thin film transistor array panel includes: a substrate; an oxide semiconductor layer disposed on the substrate and including a metal oxide selected from the group consisting of zinc oxide, tin oxide, and hafnium oxide; a gate electrode overlapping the oxide semiconductor layer; a gate insulating film disposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode disposed to at least partially overlap the oxide semiconductor layer and separated from each other.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed.

Abstract: A thin-film transistor array panel includes: an insulating substrate; an oxide semiconductor layer that is formed on the insulating substrate and includes a metal inorganic salt and zinc acetate; a gate electrode overlapping with the oxide semiconductor layer; a gate insulating film that is interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode that at least partially overlap the oxide semiconductor layer and are separated from each other.

Abstract: An image forming device includes a housing, a paper loading portion provided at an upper surface of the housing to load paper to be discharged and having a paper discharge hole, a fixing unit disposed in an upper region of the housing and used to fix a developer to the paper, and a cover to open or close an upper side of the fixing unit, the cover having one end protruding from the paper discharge hole.