Patents by Inventor Yeong-Cheol Lee
Yeong-Cheol Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10797056Abstract: A semiconductor device and methods of manufacturing the same are provided. The semiconductor device includes a substrate, buried semiconductor layers, a word line, a bit line, buried contacts, and insulation spacers, and a charge storage. The substrate has active regions and field regions. The buried semiconductor layers are buried in the substrate at the active regions. The word line is buried in the substrate and crosses one of the active regions. The bit line is disposed in one of the active regions. The buried contacts are disposed on the active regions and the field regions. The insulation spacers are disposed on the substrate and on a sidewall of the buried contacts, respectively. The charge storage is disposed on one or more of the buried contacts. The buried semiconductor layers contact, respectively, one of the buried contacts and one of the insulation spacers.Type: GrantFiled: January 22, 2020Date of Patent: October 6, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin-A Kim, Yong-Kwan Kim, Se-Keun Park, Joo-Young Lee, Cha-Won Koh, Yeong-Cheol Lee
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Patent number: 10790176Abstract: A substrate carrier may include a carrier body and a first sensor unit. The carrier body may include an internal space, an inlet port and an outlet port. The internal space may be configured to receive a substrate. A purge gas may be introduced into the internal space through the inlet port. A gas in the internal space may be exhausted through the outlet port. The first sensor unit may be at the outlet port and configured to detect environmental properties of the internal space in real time. Thus, a generation or cause of a contaminant in the carrier body may be accurately identified.Type: GrantFiled: June 19, 2018Date of Patent: September 29, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Du-Sik Bae, Hang-Ryong Lim, Se-Won Ko, Yoon-Mi Lee, Jin-Ho Kim, Jung-Dae Park, Min-Seon Lee, Yeong-Cheol Lee
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Publication number: 20200161308Abstract: A semiconductor device and methods of manufacturing the same are provided. The semiconductor device includes a substrate, buried semiconductor layers, a word line, a bit line, buried contacts, and insulation spacers, and a charge storage. The substrate has active regions and field regions. The buried semiconductor layers are buried in the substrate at the active regions. The word line is buried in the substrate and crosses one of the active regions. The bit line is disposed in one of the active regions. The buried contacts are disposed on the active regions and the field regions. The insulation spacers are disposed on the substrate and on a sidewall of the buried contacts, respectively. The charge storage is disposed on one or more of the buried contacts. The buried semiconductor layers contact, respectively, one of the buried contacts and one of the insulation spacers.Type: ApplicationFiled: January 22, 2020Publication date: May 21, 2020Applicant: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAMEInventors: Jin-A KIM, Yong-Kwan Kim, Se-Keun Park, Joo-Young Lee, Cha-Won Koh, Yeong-Cheol Lee
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Patent number: 10586798Abstract: A semiconductor device and methods of manufacturing the same are provided. The semiconductor device includes a substrate, word lines, a doped junction, bit line structures, and buried contacts. The substrate has active regions. The word lines extend across the active regions. The doped junction has impurities and is arranged at the active regions, and includes first junctions and second junctions, each first junction arranged at a central portion of one of the active regions and each second junction arranged at an end portion of another one of the active regions, a buried semiconductor layer being included in each second junction. The bit line structures contact with a respective one of the first junctions. The buried contacts are arranged in a matrix shape, each contacting with a respective one of the second junctions and the included buried semiconductor layer and simultaneously contacting with a charge storage for storing data.Type: GrantFiled: October 25, 2018Date of Patent: March 10, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin-A Kim, Yong-Kwan Kim, Se-Keun Park, Joo-Young Lee, Cha-Won Koh, Yeong-Cheol Lee
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Publication number: 20190206872Abstract: A semiconductor device and methods of manufacturing the same are provided. The semiconductor device includes a substrate, word lines, a doped junction, bit line structures, and buried contacts. The substrate has active regions. The word lines extend across the active regions. The doped junction has impurities and is arranged at the active regions, and includes first junctions and second junctions, each first junction arranged at a central portion of one of the active regions and each second junction arranged at an end portion of another one of the active regions, a buried semiconductor layer being included in each second junction. The bit line structures contact with a respective one of the first junctions. The buried contacts are arranged in a matrix shape, each contacting with a respective one of the second junctions and the included buried semiconductor layer and simultaneously contacting with a charge storage for storing data.Type: ApplicationFiled: October 25, 2018Publication date: July 4, 2019Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin-A KIM, Yong-Kwan KIM, Se-Keun PARK, Joo-Young LEE, Cha-Won KOH, Yeong-Cheol LEE
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Publication number: 20190131152Abstract: A substrate carrier may include a carrier body and a first sensor unit. The carrier body may include an internal space, an inlet port and an outlet port. The internal space may be configured to receive a substrate. A purge gas may be introduced into the internal space through the inlet port. A gas in the internal space may be exhausted through the outlet port. The first sensor unit may be at the outlet port and configured to detect environmental properties of the internal space in real time. Thus, a generation or cause of a contaminant in the carrier body may be accurately identified.Type: ApplicationFiled: June 19, 2018Publication date: May 2, 2019Inventors: Du-Sik Bae, Hang-Ryong Lim, Se-Won Ko, Yoon-Mi Lee, Jin-Ho Kim, Jung-Dae Park, Min-Seon Lee, Yeong-Cheol Lee
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Patent number: 9543308Abstract: A semiconductor device includes a bit line structure on a substrate, the bit line structure having a polysilicon layer pattern doped with impurities, and a metal layer pattern on the polysilicon layer pattern, a first spacer surrounding and contacting a sidewall of the bit line structure, the first spacer having a constant thickness, and a capacitor contact structure on the substrate, an air gap being defined between the capacitor contact structure and the first spacer.Type: GrantFiled: January 29, 2016Date of Patent: January 10, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hoon Park, Young-Seok Kim, Yeong-Cheol Lee
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Publication number: 20160148937Abstract: A semiconductor device includes a bit line structure on a substrate, the bit line structure having a polysilicon layer pattern doped with impurities, and a metal layer pattern on the polysilicon layer pattern, a first spacer surrounding and contacting a sidewall of the bit line structure, the first spacer having a constant thickness, and a capacitor contact structure on the substrate, an air gap being defined between the capacitor contact structure and the first spacer.Type: ApplicationFiled: January 29, 2016Publication date: May 26, 2016Inventors: Hoon PARK, Young-Seok KIM, Yeong-Cheol LEE
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Patent number: 9257437Abstract: A semiconductor device includes a bit line structure on a substrate, the bit line structure having a polysilicon layer pattern doped with impurities, and a metal layer pattern on the polysilicon layer pattern, a first spacer surrounding and contacting a sidewall of the bit line structure, the first spacer having a constant thickness, and a capacitor contact structure on the substrate, an air gap being defined between the capacitor contact structure and the first spacer.Type: GrantFiled: September 3, 2014Date of Patent: February 9, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hoon Park, Young-Seok Kim, Yeong-Cheol Lee
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Publication number: 20150179651Abstract: A semiconductor device includes a bit line structure on a substrate, the bit line structure having a polysilicon layer pattern doped with impurities, and a metal layer pattern on the polysilicon layer pattern, a first spacer surrounding and contacting a sidewall of the bit line structure, the first spacer having a constant thickness, and a capacitor contact structure on the substrate, an air gap being defined between the capacitor contact structure and the first spacer.Type: ApplicationFiled: September 3, 2014Publication date: June 25, 2015Inventors: Hoon PARK, Young-Seok KIM, Yeong-Cheol LEE
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Patent number: 8652342Abstract: A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.Type: GrantFiled: May 10, 2012Date of Patent: February 18, 2014Assignee: Samsung Electronics Co., LtdInventors: Kyung-Woo Lee, Jin-Sung Kim, Joo-Byoung Yoon, Yeong-Cheol Lee, Sang-Jun Park, Hee-Kyeong Jeon
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Publication number: 20120220110Abstract: A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.Type: ApplicationFiled: May 10, 2012Publication date: August 30, 2012Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung-Woo LEE, Jin-sung kim, Joo-Byoung Yoon, Yeong-Cheol Lee, Sang-Jun Park, Hee-kyeong Jeon
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Patent number: 8197637Abstract: A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.Type: GrantFiled: February 19, 2008Date of Patent: June 12, 2012Assignee: SAMSUNG Electronics Co., Ltd.Inventors: Kyung-Woo Lee, Jin-Sung Kim, Joo-Byoung Yoon, Yeong-Cheol Lee, Sang-Jun Park, Hee-Kyeong Jeon
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Patent number: 7807542Abstract: A highly reliable semiconductor device and a method fabricating the same are provided, the semiconductor device having a low resistance electrode structure. The semiconductor device includes an interlayer insulation film formed on a semiconductor substrate. A storage node electrode is formed on the interlayer insulation film. A protection film is formed on the storage node electrode and includes a nitrided metal film. A dielectric film overlies the protection film. A plate electrode is formed on the dielectric film.Type: GrantFiled: November 21, 2006Date of Patent: October 5, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Joo-Byoung Yoon, Jin-Sung Kim, Kyung-Woo Lee, Yeong-Cheol Lee, Sang-Jun Park, Hye-Sun Kim
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Publication number: 20080206998Abstract: A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.Type: ApplicationFiled: February 19, 2008Publication date: August 28, 2008Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung-Woo Lee, Jin-Sung Kim, Joo-Byoung Yoon, Yeong-Cheol Lee, Sang-Jun Park, Hee-Kyeong Jeon
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Patent number: 7375003Abstract: In a method of manufacturing a semiconductor device including a capacitor, a first mold layer is formed on a semiconductor substrate. The first mold layer is partially etched to form a first mold layer pattern including an opening for a capacitor. A first lower electrode layer is formed on the first mold layer pattern. A second lower electrode layer including a plurality of first pores is formed on the first lower electrode layer and in the opening. Upper portions of the first lower electrode layer and the second lower electrode layer are removed to form a first lower electrode and a second lower electrode in the opening. A dielectric layer and an upper electrode are successively formed on the first lower electrode and the second lower electrode. Therefore, a capacitor having an enhanced capacitance may be obtained.Type: GrantFiled: September 30, 2005Date of Patent: May 20, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Joo-Byoung Yoon, Jin-Sung Kim, Kyung-Woo Lee, Yeong-Cheol Lee, Sang-Jun Park, Hwan-Shik Park
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Patent number: 7358557Abstract: A capacitor for a semiconductor device includes a lower electrode, a dielectric layer formed on a lower electrode, and an upper electrode formed on the dielectric layer. The lower electrode includes a first layer having a cylindrical shape and a mesh second layer formed on inner sidewalls and the bottom surface of the first layer. Beneficially, the first layer is connected to a conductive region of a semiconductor substrate by a contact plug. The lower electrode can be formed by injecting a catalyst into an opening in which the cylindrical first layer is to be formed before forming the cylindrical first layer.Type: GrantFiled: August 15, 2006Date of Patent: April 15, 2008Assignee: Samsung Electronics Co., Ltd.Inventor: Yeong-Cheol Lee
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Publication number: 20070117333Abstract: A highly reliable semiconductor device and a method fabricating the same are provided, the semiconductor device having a low resistance electrode structure. The semiconductor device includes an interlayer insulation film formed on a semiconductor substrate. A storage node electrode is formed on the interlayer insulation film. A protection film is formed on the storage node electrode and includes a nitrided metal film. A dielectric film overlies the protection film. A plate electrode is formed on the dielectric film.Type: ApplicationFiled: November 21, 2006Publication date: May 24, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Joo-Byoung YOON, Jin-Sung KIM, Kyung-Woo LEE, Yeong-Cheol LEE, Sang-Jun PARK, Hye-Sun KIM
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Publication number: 20070026712Abstract: Example embodiments of the present invention relate to a semiconductor device and a method of fabricating the same. Other example embodiments of the present invention relate to a semiconductor device having a metal silicide layer of a substrate and a barrier metal layer constituting a line layer and a method of fabricating the same. The semiconductor device may include a bar-type contact structure (e.g., a contact surface with an active region is bar shaped) and a dot-type contact structure (e.g., the contact surface is dot shaped). The bar-type contact structure may have a larger contact area with the active region. The bar-type contact structure may retard or prevent an ohmic contact layer, which is formed by the chemical combination of a barrier metal layer and a substrate between which a semiconductor layer is interposed, from being extended outside source/drain regions or being electrically shorted to a gate electrode.Type: ApplicationFiled: August 1, 2006Publication date: February 1, 2007Inventors: Joo-byoung Yoon, Jin-sung Kim, Chang-hyuk Ok, Kyung-woo Lee, Yeong-cheol Lee, Sang-jun Park
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Publication number: 20060273369Abstract: A capacitor for a semiconductor device includes a lower electrode, a dielectric layer formed on a lower electrode, and an upper electrode formed on the dielectric layer. The lower electrode includes a first layer having a cylindrical shape and a mesh second layer formed on inner sidewalls and the bottom surface of the first layer. Beneficially, the first layer is connected to a conductive region of a semiconductor substrate by a contact plug. The lower electrode can be formed by injecting a catalyst into an opening in which the cylindrical first layer is to be formed before forming the cylindrical first layer.Type: ApplicationFiled: August 15, 2006Publication date: December 7, 2006Inventor: Yeong-Cheol Lee