Abstract: An acoustic wave resonator includes a substrate; a resonating part disposed on a first surface of the substrate and including a first electrode, a piezoelectric layer, and a second electrode; and a cap disposed on the first surface of the substrate and including an accommodating part accommodating the resonating part. The resonating part is configured to be operated by either one or both of a signal output from a first device substrate disposed facing a second surface of the substrate on an opposite side of the substrate from the first surface of the substrate and a signal output from a second device substrate disposed on the cap.

Abstract: A resonator package and a method of manufacturing the same are provided. The method of manufacturing a resonator package involves etching a lower electrode with a hardmask, in which only a portion of a thickness of the lower electrode is etched to shape the lower electrode.

Abstract: A bulk acoustic wave resonator includes a resonating part comprising a first electrode, a piezoelectric layer, and a second electrode sequentially laminated, wherein the resonating part is disposed on a substrate; and a cap comprising a groove part configured to accommodate the resonating part, a frame bonded to the substrate by a bonding agent, and a permeation preventing part configured to block the bonding agent from permeating into the groove part from the frame.

Abstract: In examples, there is provided a bulk acoustic wave resonator including a substrate; a resonating part including a first electrode, a piezoelectric layer, and a second electrode, laminated on an upper surface of the substrate, a cap bonded to the substrate by a bonding agent; and a sealing layer formed on an externally exposed surface of the bonding agent. This structure provides for a bulk acoustic wave resonator with improved reliability.

Abstract: A bulk acoustic wave resonator including a substrate; an air cavity formed on the substrate; and a resonating part formed on the air cavity and comprising a first electrode, a piezoelectric layer, and a second electrode which are sequentially laminated, wherein a cross section of the air cavity has a short side, a long side opposing the short side, a first lateral side and a second lateral side connecting the short side and the long side to each other, the first and second lateral sides are inclined, and a surface roughness of the first electrode, the piezoelectric layer, the second electrode, or any combination thereof is between 1 nm and 100 nm.

Abstract: There are provided an acoustic resonator and a method of manufacturing the same. The acoustic resonator includes a resonance part including a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator also includes a substrate disposed below the resonance part and including a via hole penetrating through the substrate and a connection conductor disposed in the via hole and connected to at least one of the first and second electrodes.

Abstract: A bulk acoustic wave resonator may include: a piezoelectric layer including a piezoelectric material; a first electrode disposed on one surface of the piezoelectric layer; a second electrode disposed on the another surface of the piezoelectric layer; and a frame disposed on the one surface of the piezoelectric layer and surrounding the first electrode, wherein the frame is spaced apart from the first electrode by a predetermined gap.

Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonance part including a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes; and a substrate disposed below the resonance part. The piezoelectric layer is disposed on a flat surface of the first electrode.

Abstract: There is provided an acoustic resonator including: a resonance part including a first electrode, a second electrode, and a piezoelectric layer interposed between the first and second electrodes; and a substrate provided below the resonance part, wherein the substrate includes at least one via hole penetrating through the substrate and a connective conductor formed in the via hole and connected to at least one of the first and second electrodes. Therefore, reliability of the connective conductor formed in the substrate may be secured.

Abstract: Disclosed herein are a capacitor with a hole structure and a manufacturing method thereof. A capacitor with a hole structure includes: a substrate layer having a plurality of through-holes formed therein; a lower electrode layer including a first conductive layer having a low specific resistance and a second conductive layer having a specific resistance higher than that of the first conductive layer, the first conductive layer being formed on an inner wall of the through-hole and the second conducive layer being formed on the first conductive layer; a thin film dielectric layer formed on the lower electrode layer; and an upper electrode layer including a third conductive layer and a fourth conductive layer having a specific resistance lower than that of the third conductive layer, the third conductive layer being formed on the thin film dielectric layer and the fourth conductive layer being formed on the third conductive layer.

Abstract: Disclosed herein is an angular velocity sensor, including: a mass body part; an internal frame supporting the mass body part; a first flexible part each connecting the mass body part to the internal frame; a second flexible part each connecting the mass body part to the internal frame; an external frame supporting the internal frame; a third flexible part connecting the internal frame and the external frame to each other; and a fourth flexible part connecting the internal frame and the external frame to each other, wherein the internal frame, the second flexible part, and the fourth flexible part have an oxide layer formed thereon.

Abstract: There is provided a capacitor, including: a first substrate: a first capacitance generation part formed on the first substrate; a protective layer formed on the first capacitance generation part; a second capacitance generation part formed on the protective layer; and a second substrate formed on the second capacitance generation part.

Abstract: Disclosed herein is a method of manufacturing an inertial sensor. The method of manufacturing an inertial sensor 100 includes (A) applying a polymer 120 to a base substrate 110, (B) patterning the polymer 120 so as to form an opening part 125 in the polymer 120, (C) completing a cap 130 by forming a cavity 115 on the base substrate 110 exposed fro the opening part 125 through an etching process in a thickness direction, and (D) bonding the cap 130 to a device substrate 140 by using a polymer 120, whereby the polymer 120 is applied to the base substrate 110 in a constant thickness D3, such that the cap 130 may be easily bonded to the device substrate 140 by using the polymer 120.

Abstract: Disclosed herein is a method of manufacturing an inertial sensor. The method of manufacturing an inertial sensor 100 includes (A) applying a polymer 120 to a base substrate 110, (B) patterning the polymer 120 so as to form an opening part 125 in the polymer 120, (C) completing a cap 130 by forming a cavity 115 on the base substrate 110 exposed fro the opening part 125 through an etching process in a thickness direction, and (D) bonding the cap 130 to a device substrate 140 by using a polymer 120, whereby the polymer 120 is applied to the base substrate 110 in a constant thickness D3, such that the cap 130 may be easily bonded to the device substrate 140 by using the polymer 120.

Abstract: Disclosed herein is an inertial sensor. The inertial sensor includes a sensor unit including a flexible substrate part on which a driving electrode and a sensing electrode are formed, a mass displaceably mounted on the flexible substrate part, and a support body coupled with the flexible substrate part in order to support the mass in a floated state and made of silicon; and a lower cap covering a bottom portion of the mass and made of silicon, wherein the lower cap and the sensor unit are coupled by a silicon direct bonding method, whereby the inertial sensor and the method of manufacturing the same may be obtained to improve the convenience in manufacturing and the reliability of the sensor by bonding the sensor unit and the lower cap by the silicon direct bonding method.

Abstract: There is provided a duplexer device and a method of manufacturing the same. The duplexer device includes a substrate including a duplex circuit; first and second acoustic wave filter chips mounted on the substrate in a flip chip bonding manner and constituting an Rx (receiver) filter and a Tx (transmitter) filter, respectively; and a molding portion covering the first and second acoustic wave filter chips. The first and second acoustic wave filter chips are arranged by flip chip bonding, so there is no need for a separate protective structure so as to protect device functional portions of the chips. Accordingly, a compact product is realized and a manufacturing process is simplified.

Abstract: A projection type of display apparatus for removing a noise is disclosed. In accordance with an embodiment of the present invention, the projection type of display apparatus includes: a light source; an optical board, incidenting a beam of light emitted from the light source; and an optical modulator, being fixed on one surface of the optical board and modulating and emitting the beam of light that passed through the optical board. The blocking layer is formed on the optical board. With the present invention, it is possible to remove the noise of the image and display the image more clearly by enhancing the contrast.

Abstract: A micro-electro-mechanical system (MEMS) package having a side double-sealing member and method of manufacturing the MEMS package is disclosed. The MEMS package is formed by forming a metal layer on a base substrate by patterning so that the metal layer surrounds an MEMS element provided on the base substrate, joining a lid glass to the metal layer, and providing a side double-sealing member on a surface of the base substrate and a side surface of the lid glass, thus hermetically sealing the MEMS element from the external environment.

Abstract: Disclosed herein is an optical modulator module package using a flip-chip mounting technology, in which an optical modulator device is hermetically mounted using the flip-chip mounting technology. The optical modulator device is protected from an external environment, it is easy to transmit an electrical signal to the exterior, and optical characteristics of the optical modulator device are desirably maintained.

Abstract: A micro-electro-mechanical system (MEMS) package having a hydrophobic layer is disclosed. The MEMS package includes: a base substrate, with an MEMS element provided on a surface of the base substrate; a lid, spaced apart from the MEMS element provided on the base substrate and covering the MEMS element; a side sealing member provided on a side surface of the base substrate and the surface of the lid, thus hermetically sealing the MEMS element from an external environment; and a hydrophobic layer which covers the part of the side sealing member that is exposed to the external environment, thus removing the hydrophilia from the side sealing member.