Abstract: Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first and second transistors arranged over a substrate. The first transistor includes first channel structures extending between first and second source/drain regions. A first gate electrode is arranged between the first channel structures, and a first protection layer is arranged over a topmost one of the first channel structures. The second transistor includes second channel structures extending between the second source/drain region and a third source/drain region. A second gate electrode is arranged between the second channel structures, and a second protection layer is arranged over a topmost one of the second channel structures. The integrated chip further includes a first interconnect structure arranged between the substrate and the first and second channel structures, and a contact plug structure coupled to the second source/drain region and arranged above the first and second gate electrodes.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.

Abstract: Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first and second transistors arranged over a substrate. The first transistor includes first channel structures extending between first and second source/drain regions. A first gate electrode is arranged between the first channel structures, and a first protection layer is arranged over a topmost one of the first channel structures. The second transistor includes second channel structures extending between the second source/drain region and a third source/drain region. A second gate electrode is arranged between the second channel structures, and a second protection layer is arranged over a topmost one of the second channel structures. The integrated chip further includes a first interconnect structure arranged between the substrate and the first and second channel structures, and a contact plug structure coupled to the second source/drain region and arranged above the first and second gate electrodes.

Abstract: A bag is filled with liquid, instead of an airbag filled with gas, to deform a bottom wafer toward a top wafer during a wafer bonding process. As a result, the liquid is less susceptible to temperature changes, which reduces run-out variation across wafer bonding processes. Reducing run-out variation conserves wasted wafers by increasing yield and reducing a quantity of non-functioning devices that are produced. Additionally, in some implementations, the liquid may be pre-heated before the bag is filled with the liquid. As a result, the bottom wafer (and, to some extent, the top wafer) experiences some thermal deformation and less mechanical deformation, which further increases yield and reduces a quantity of non-functioning devices that are produced.

Abstract: The present disclosure relates to a processing tool that includes a first wafer-mounting frame and a second wafer-mounting frame. The first wafer-mounting frame is configured to retain a target wafer. The second wafer-mounting frame is configured to retain a masking wafer. The masking wafer includes a mask pattern made up of a number of openings passing through the masking wafer to correspond to a predetermined deposition pattern to be formed on the target wafer. A deposition chamber is configured to receive the first and second wafer-mounting frames, when the first and second wafer-mounting frames are clamped together to retain the target wafer and the masking wafer. The deposition chamber includes a material deposition source configured to deposit material from the material deposition source through the number of openings in the mask pattern to form the material in the predetermined deposition pattern on the target wafer.

Abstract: The present disclosure relates to a processing tool that includes a first wafer-mounting frame and a second wafer-mounting frame. The first wafer-mounting frame is configured to retain a target wafer. The second wafer-mounting frame is configured to retain a masking wafer. The masking wafer includes a mask pattern made up of a number of openings passing through the masking wafer to correspond to a predetermined deposition pattern to be formed on the target wafer. A deposition chamber is configured to receive the first and second wafer-mounting frames, when the first and second wafer-mounting frames are clamped together to retain the target wafer and the masking wafer. The deposition chamber includes a material deposition source configured to deposit material from the material deposition source through the number of openings in the mask pattern to form the material in the predetermined deposition pattern on the target wafer.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes performing a bonding process to bond a first semiconductor substrate to a second semiconductor substrate. A shift measurement process is performed on the first and second semiconductor substrates. The shift measurement process includes moving a plurality of substrate pins from a plurality of initial positions to a plurality of measurement positions. The plurality of substrate pins are disposed outside of perimeters of the first and second semiconductor substrates. A shift value is determined between the first semiconductor substrate and the second semiconductor substrate based at least in part on a difference between the plurality of initial positions and the plurality of measurement positions.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes loading a first wafer and a second wafer onto a bonding platform such that the second wafer overlies the first wafer. An alignment process is performed to align the second wafer over the first wafer by virtue of a plurality of wafer pins, where a plurality of first parameters are associated with the wafer pins during the alignment process. The second wafer is bonded to the first wafer. An overlay (OVL) measurement process is performed on the first wafer and the second wafer by virtue of the plurality of wafer pins, where a plurality of second parameters are associated with the wafer pins during the alignment process.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes loading a first wafer and a second wafer onto a bonding platform such that the second wafer overlies the first wafer. An alignment process is performed to align the second wafer over the first wafer by virtue of a plurality of wafer pins, where a plurality of first parameters are associated with the wafer pins during the alignment process. The second wafer is bonded to the first wafer. An overlay (OVL) measurement process is performed on the first wafer and the second wafer by virtue of the plurality of wafer pins, where a plurality of second parameters are associated with the wafer pins during the alignment process.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first and second transistors arranged over a substrate. The first transistor includes first channel structures extending between first and second source/drain regions. A first gate electrode is arranged between the first channel structures, and a first protection layer is arranged over a topmost one of the first channel structures. The second transistor includes second channel structures extending between the second source/drain region and a third source/drain region. A second gate electrode is arranged between the second channel structures, and a second protection layer is arranged over a topmost one of the second channel structures. The integrated chip further includes a first interconnect structure arranged between the substrate and the first and second channel structures, and a contact plug structure coupled to the second source/drain region and arranged above the first and second gate electrodes.

Abstract: An apparatus for wafer bonding includes a transfer module and a plasma module. The transfer module is configured to transfer a semiconductor wafer. The plasma module is configured to apply a first type of plasma to perform a reduction operation upon a surface of the semiconductor wafer at a temperature within a predetermined temperature range to convert metal oxides on the surface of the semiconductor wafer to metal, and apply a second type of plasma to perform a plasma operation upon the surface of the semiconductor wafer at a room temperature outside the predetermined temperature range to activate a surface of the semiconductor wafer.

Abstract: A method includes placing a package structure into a mold chase, with top surfaces of device dies in the package structure contacting a release film in the mold chase. A molding compound is injected into an inner space of the mold chase through an injection port, with the injection port on a side of the mold chase. During the injection of the molding compound, a venting step is performed through a first venting port and a second venting port of the mold chase. The first venting port has a first flow rate, and the second port has a second flow rate different from the first flow rate.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a plurality of upper alignment marks on a semiconductor wafer. A plurality of lower alignment marks is formed on a handle wafer and correspond to the upper alignment marks. The semiconductor wafer is bonded to the handle wafer such that centers of the upper alignment marks are laterally offset from centers of corresponding lower alignment marks. An overlay (OVL) shift is measured between the handle wafer and the semiconductor wafer by detecting the plurality of upper alignment marks and the plurality of lower alignment marks. A photolithography process is performed by a photolithography tool to partially form an integrated circuit (IC) structure over the semiconductor wafer. During the photolithography process the photolithography tool is compensatively aligned according to the OVL shift.

Abstract: An apparatus for wafer bonding includes a transfer module and a plasma module. The transfer module is configured to transfer a semiconductor wafer. The plasma module is configured to apply a first type of plasma to perform a reduction operation upon a surface of the semiconductor wafer at a temperature within a predetermined temperature range to convert metal oxides on the surface of the semiconductor wafer to metal, and apply a second type of plasma to perform a plasma operation upon the surface of the semiconductor wafer at a room temperature outside the predetermined temperature range to activate a surface of the semiconductor wafer.

Abstract: Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.

Abstract: Embodiments of mechanisms for forming a package are provided. The package includes a substrate and a contact pad formed on the substrate. The package also includes a conductive pillar bonded to the contact pad through solder formed between the conductive pillar and the contact pad. The solder is in direct contact with the conductive pillar.

Abstract: Various embodiments of the present disclosure are directed towards a three-dimensional (3D) trench capacitor, as well as methods for forming the same. In some embodiments, a first substrate overlies a second substrate so a front side of the first substrate faces a front side of the second substrate. A first trench capacitor and a second trench capacitor extend respectively into the front sides of the first and second substrates. A plurality of wires and a plurality of vias are stacked between and electrically coupled to the first and second trench capacitors. A first through substrate via (TSV) extends through the first substrate from a back side of the first substrate, and the wires and the vias electrically couple the first TSV to the first and second trench capacitors. The first and second trench capacitors and the electrical coupling therebetween collectively define the 3D trench capacitor.