Abstract: A die-stacked package structure, wherein a plurality of dies are stacked on the substrate with a rotation so that a plurality of metallic ends and the metal pad on each die on the substrate can all be exposed; a plurality of metal wires are provided for electrically connecting the plurality of metal pads on the plurality of dies with the plurality metallic ends on the substrate in one wire bonding process; then an encapsulate is provided for covering the plurality of stacked dies, a plurality of metal wires and the plurality of metallic ends on the substrate.

Abstract: MEMS processes for fabrication of a MEMS alloy probe are revealed. Multiple layers of the MEMS alloy probe are formed on the substrate in sequences as a first surface layer, a first conductive layer, a core layer, a second conductive layer, and a second surface layer where the width of the first conductive layer is smaller than the one of first surface layer so that all the exposed edges of the first surface layer are not covered by the first conductive layer. The second surface layer is extended from the sidewalls of the core layer to the exposed edges of the first surface layer to encapsulate the core layer, the first conductive layer, and the second conductive layer. The MEMS alloy probe fabricated by the MEMS processes can eliminate the issue of oxidation.

Abstract: An IC package to enhance the bondibility of embedded bumps, primarily includes a substrate having a plurality of bump-accommodating holes, a bumped chip, an encapsulant, and a plurality of external terminals. The substrate further has a plurality of inner pads at one ends of the bump-accommodating holes respectively. The inner pads may be meshed or a soldering layer is disposed thereon for improving bump connection. The chip is attached to the substrate with the bumps aligned and embedded in the corresponding bump-accommodating holes. The encapsulant is at least formed on a lower surface of the substrate to encapsulate the meshes or the soldering layer. By the suspended meshes or/and the soldering layer, the bumps can be easily bonded at lower temperatures to simplify the manufacturing process with shorter electrical conductive paths and thinner package profiles without wire sweeping.

Abstract: A high frequency IC package mainly includes a substrate, a bumped chip, and a plurality of conductive fillers where the substrate has a plurality of bump holes penetrating from the top surface to the bottom surface. The active surface of the chip is attached to the top surface of the substrate in a manner that the bumps are inserted into the bump holes respectively. The conductive fillers are formed in the bump holes to electrically connect the bumps to the circuit layer of the substrate. The high frequency IC package has a shorter electrical path and a thinner package thickness.