Abstract: A composite for sensing heat or infrared light includes a block copolymer including a first structural group represented by Chemical Formula 1, a second structural group represented by Chemical Formula 2, and a third structural group represented by Chemical Formula 3; and a polyvalent metal ion that is coordinated with a side chain group of the block copolymer.

Abstract: A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.

Abstract: A physically-unclonable-function (PUF) circuit and the control method thereof are provided, and the control method can be applied to the magnetoresistive device. The control method includes providing a first energy to a plurality of magnetic-tunnel junction (MTJ) devices after initializing the MTJ devices to a resistance state, and determining whether the hamming weight of at least one of the MTJ devices which has a predetermined resistance state is within a predetermined range or not.

Abstract: A physically-unclonable-function (PUF) circuit and the control method thereof are provided, and the control method can be applied to the magnetoresistive device. The control method includes providing a first energy to a plurality of magnetic-tunnel junction (MTJ) devices after initializing the MTJ devices to a resistance state, and determining whether the hamming weight of at least one of the MTJ devices which has a predetermined resistance state is within a predetermined range or not.

Abstract: A biomolecule magnetic sensor configured to sense magnetic beads attached with biomolecules includes an adsorption pad, a magnetic field line generator and at least one magnetic sensor. The adsorption pad is configured to adsorb the magnetic beads. The magnetic field line generator is configured to generate a plurality of first magnetic field lines, and at least one of the first magnetic field lines passes through the magnetic beads along a first direction to induce a plurality of second magnetic field lines, wherein the magnetic field line generator is disposed between the adsorption pad and the magnetic sensor in the first direction. The magnetic sensor is configured to sense a magnetic field component of at least one of the second magnetic field lines in a second direction. A second shift is provided between the magnetic sensor and the adsorption pad in the second direction.

Abstract: A tunneling magneto-resistor (TMR) device for sensing a magnetic field includes a first TMR sensor having a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. Each of the first and second MTJ devices has a pinned layer and a free layer. The pinned layer of each of the first and second MTJ devices has a pinned magnetization at a first pinned direction. The free layers of the first and second MTJ devices have a first free magnetization parallel to and a second free magnetization anti-parallel to a first easy-axis respectively.

Abstract: A tunneling magneto-resistor (TMR) device for sensing a magnetic field includes a first TMR sensor having a first MTJ (magnetic tunneling junction) device and a second MTJ device connected in parallel. Each of the first and second MTJ devices has a pinned layer and a free layer. The pinned layer of each of the first and second MTJ devices has a pinned magnetization at a first pinned direction. The free layers of the first and second MTJ devices have a first free magnetization parallel to and a second free magnetization anti-parallel to a first easy-axis respectively.

Abstract: A magnetic field sensor for sensing an external magnetic field is disclosed. The magnetic field sensor includes at least two magnetic tunneling junction (MTJ) elements disposed on an underlying electrode. Each of the MTJ elements is formed by a synthetic antiferromagnetic layer, a barrier layer and a free layer sequentially stacked together. A top electrode is then connected to the free layers. The free layer can be a single free layer, a composite free layer, a synthetic antiferromagnetic free layer or an alloy free layer. When a current is applied to a metal circuit passing over or below the MTJ elements, free magnetic moments generated by the MTJ elements are anti-parallel to each other along a reference axis, and the angles between the magnetic moments created by the MTJ elements and the reference axis are 40 to 50 degrees and 130 to 140 degrees, respectively.

Abstract: A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.

Abstract: A wireless client device is associated with an access point in an association having a value for a listen interval parameter. The wireless client device determines, according to predefined considerations, a different value for the listen interval parameter, and declares the different value for the listen interval parameter in a wireless transmission to the access point. The listen interval parameter specifies a number of beacon intervals that can pass from a time the wireless client device listens for a beacon frame from the access point before the wireless client device listens for a next beacon frame from the access point.

Abstract: A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.

Abstract: A method for searching using a touchscreen including: receiving, from a user, multiple search criteria; receiving, using the touchscreen, a gesture input from the user; selecting a search preference corresponding to the gesture input; obtaining multiple modified search criteria by modifying the plurality of search criteria based on the search preference; and generating multiple search results based on the multiple modified search criteria and a data repository.

Abstract: Magnetic field sensing method and apparatus of this disclosure uses two tunneling magneto-resistor (TMR) devices. Angles of the free magnetizations of the two TMR devices with respect to a fixed direction are set in a first to fourth period. In the first to fourth period, the two TMR devices act as a TMR sensing unit and a zero-field reference unit by turns, and each of the conductance difference between the sensing unit and the zero field reference unit is also obtained in each of the first to fourth period. Finally, the four conductance differences are summed up.

Abstract: A magnetic field sensor for sensing an external magnetic field is disclosed. The magnetic field sensor includes at least two magnetic tunneling junction (MTJ) elements disposed on an underlying electrode. Each of the MTJ elements is formed by a synthetic antiferromagnetic layer, a barrier layer and a free layer sequentially stacked together. A top electrode is then connected to the free layers. The free layer can be a single free layer, a composite free layer, a synthetic antiferromagnetic free layer or an alloy free layer. When a current is applied to a metal circuit passing over or below the MTJ elements, free magnetic moments generated by the MTJ elements are anti-parallel to each other along a reference axis, and the angles between the magnetic moments created by the MTJ elements and the reference axis are 40 to 50 degrees and 130 to 140 degrees, respectively.

Abstract: Magnetic field sensing method and apparatus of this disclosure uses two tunneling magneto-resistor (TMR) devices. Angles of the free magnetizations of the two TMR devices with respect to a fixed direction are set in a first to fourth period. In the first to fourth period, the two TMR devices act as a TMR sensing unit and a zero-field reference unit by turns, and each of the conductance difference between the sensing unit and the zero field reference unit is also obtained in each of the first to fourth period. Finally, the four conductance differences are summed up.

Abstract: A top-pinned magnetic tunnel junction device with perpendicular magnetization, including a bottom electrode, a non-ferromagnetic spacer, a free layer, a tunneling barrier, a synthetic antiferromagnetic reference layer and a top electrode, is provided. The non-ferromagnetic spacer is located on the bottom electrode. The free layer is located on the non-ferromagnetic spacer. The tunnel insulator is located on the free layer. The synthetic antiferromagnetic reference layer is located on the tunneling barrier. The synthetic antiferromagnetic reference layer includes a top reference layer located on the tunneling barrier, a middle reference layer located on the bottom reference layer and a bottom reference layer located on the tunneling barrier. The magnetization of the top reference layer is larger than that of the bottom reference layer. The top electrode is located on the synthetic antiferromagnetic reference layer.

Abstract: A method for authenticating a user, that includes receiving an account identifier from the user, obtaining a media prompt from an account based on the account identifier, presenting the user with the media prompt and a question prompt, wherein the question prompt references the media prompt, receiving input answering the question prompt, comparing the input with a valid response to determine whether the user is authentic, wherein the valid response requires personal knowledge of the media prompt and the question prompt, and authorizing the user to access a resource when the user is authentic.

Abstract: A magnetic memory element includes a pinned layer, a tunneling barrier layer, a free layer and a stabilizing layer. The tunneling barrier layer is disposed on the pinned layer. The free layer is disposed on the tunneling barrier layer. The stabilizing layer is disposed on the free layer.

Abstract: A magnetic random access memory (MRAM) including multiple memory cells for forming an array is provided. Each memory cell has a magnetic free stack layer and a pinned stack layer. A magnetization of the pinned stack layer is set toward a predetermined direction. The magnetic free stack layer has a magnetic easy axis. Two magnetic easy axes of adjacent two memory cells are substantially perpendicular to each other.

Abstract: A magnetic memory element includes a pinned layer, a tunneling barrier layer, a free layer and a stabilizing layer. The tunneling barrier layer is disposed on the pinned layer. The free layer is disposed on the tunneling barrier layer. The stabilizing layer is disposed on the free layer.