Patents by Inventor Yeong-Lyeol Park
Yeong-Lyeol Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230298969Abstract: A cooling apparatus may include a microchannel structure including a plurality of microchannels and a manifold disposed over the plurality of microchannels. The microchannel structure may be directly bonded to a chip and dissipate heat generated in the chip during an operation of the chip. The microchannel structure may further include a base over which the plurality of microchannels are disposed and a plurality of fins spaced apart from each other and disposed over the base.Type: ApplicationFiled: March 15, 2023Publication date: September 21, 2023Inventors: Yeong Lyeol PARK, Kyo Sung CHOO
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Patent number: 9559002Abstract: A semiconductor device includes a circuit device on a substrate and a first insulating interlayer on the substrate and covering the circuit device. An electrode structure extends through the first insulating interlayer and at least partially through the substrate. An etch-stop layer pattern is disposed on a sidewall of the electrode structure on a side of the first insulating layer opposite the substrate. A blocking layer pattern is disposed on the etch-stop layer pattern. The device further includes an interconnection structure including a via portion passing through the blocking layer pattern to contact the through electrode structure and a wiring portion on the via portion and having a different width than the via portion. The semiconductor device may further include a contact plug electrically connected to the circuit device through the first insulating interlayer. The contact plug and the through electrode structure may include different metals.Type: GrantFiled: July 21, 2015Date of Patent: January 31, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-Taek Lee, Eun-Ji Kim, Sin-Woo Kang, Yeong-Lyeol Park, Sung-Dong Cho
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Patent number: 9437554Abstract: Provided is a semiconductor device. A semiconductor chip is disposed on a substrate. A first magnetic substance, a second magnetic substance and a third magnetic substance which are spaced apart from one another are formed on the semiconductor chip. The first magnetic substance and the second magnetic substance can be adjacent an edge of the semiconductor chip. The third magnetic substance can be adjacent a center of the semiconductor chip. The third magnetic substance is between the first magnetic substance and the second magnetic substance.Type: GrantFiled: July 14, 2014Date of Patent: September 6, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Wook Ji, Hyoung-Yol Mun, Yeong-Lyeol Park, In-Kyum Lee
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Patent number: 9293415Abstract: Semiconductor devices including a protection pattern for reducing galvanic corrosion and methods of forming the semiconductor devices are provided. The semiconductor devices may include a substrate including a keep out zone (KOZ) and a plurality of interconnections, which may be disposed outside of the KOZ on the substrate. The semiconductor devices may also include a through silicon via (TSV) in the KOZ. The TSV may pass through the substrate. The semiconductor device may further include a protection pattern, which may be electrically insulated from the TSV, may be disposed in the KOZ and may include a different conductive material from the TSV. A lower end of the protection pattern may be disposed at a level higher than a lower end of the TSV.Type: GrantFiled: May 11, 2015Date of Patent: March 22, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-Ji Kim, Sung-Dong Cho, Hyoung-Yol Mun, Yeong-Lyeol Park, Seung-Taek Lee
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Publication number: 20160020145Abstract: A semiconductor device includes a circuit device on a substrate and a first insulating interlayer on the substrate and covering the circuit device. An electrode structure extends through the first insulating interlayer and at least partially through the substrate. An etch-stop layer pattern is disposed on a sidewall of the electrode structure on a side of the first insulating layer opposite the substrate. A blocking layer pattern is disposed on the etch-stop layer pattern. The device further includes an interconnection structure including a via portion passing through the blocking layer pattern to contact the through electrode structure and a wiring portion on the via portion and having a different width than the via portion. The semiconductor device may further include a contact plug electrically connected to the circuit device through the first insulating interlayer. The contact plug and the through electrode structure may include different metals.Type: ApplicationFiled: July 21, 2015Publication date: January 21, 2016Inventors: Seung-Taek Lee, Eun-Ji Kim, Sin-Woo Kang, Yeong-Lyeol Park, Sung-Dong Cho
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Publication number: 20150340314Abstract: Semiconductor devices including a protection pattern for reducing galvanic corrosion and methods of forming the semiconductor devices are provided. The semiconductor devices may include a substrate including a keep out zone (KOZ) and a plurality of interconnections, which may be disposed outside of the KOZ on the substrate. The semiconductor devices may also include a through silicon via (TSV) in the KOZ. The TSV may pass through the substrate. The semiconductor device may further include a protection pattern, which may be electrically insulated from the TSV, may be disposed in the KOZ and may include a different conductive material from the TSV. A lower end of the protection pattern may be disposed at a level higher than a lower end of the TSV.Type: ApplicationFiled: May 11, 2015Publication date: November 26, 2015Inventors: Eun-Ji KIM, Sung-Dong CHO, Hyoung-Yol MUN, Yeong-Lyeol PARK, Seung-Taek LEE
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Patent number: 9147640Abstract: Semiconductor devices are provided including an internal circuit on a front side of a substrate, the substrate defining a through-silicon via (TSV) structure extending vertically therein; a back side insulating layer on a back side of the substrate; and a back side bonding structure on the back side insulating layer. The TSV structure includes a front side end on a front side of the substrate and contacts the internal circuit and a back side end extending toward a back side of the substrate. The back side bonding structure includes a back side bonding interconnection portion on the back side insulating layer defining a back side bonding via hole therein and a back side bonding via plug portion in the contact plug hole in the back side insulating layer connected to a back side end of the TSV structure.Type: GrantFiled: August 1, 2013Date of Patent: September 29, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Woon-Seob Lee, Sin-Woo Kang, Yeong-Lyeol Park, Jang-Ho Kim, Ki-Young Yun
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Patent number: 9087885Abstract: Provided is a method of fabricating a semiconductor device. In one embodiment, the method includes forming at least one unit device in a substrate and on a front side of the substrate, forming a through-silicon via (TSV) structure apart from the at least one unit device to substantially vertically penetrate the substrate, the TSV structure having a back end including a concave portion, forming an internal circuit on the front side of the substrate and a front end of the TSV structure to be electrically connected to the at least one unit device and the front end of the TSV structure, forming a front side bump on the front side of the substrate to be electrically connected to the front end of the TSV structure, forming a redistribution layer on a back side of the substrate to be electrically connected to the back end of the TSV structure, and forming a back side bump to be electrically connected to the redistribution layer.Type: GrantFiled: April 7, 2014Date of Patent: July 21, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang-Wook Ji, Yeong-Lyeol Park, Hyoung-Yol Mun, In-Kyum Lee
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Publication number: 20150137388Abstract: A semiconductor device includes a first low-k dielectric layer structure including at least one first low-k dielectric layer sequentially stacked on a substrate, a via structure extending through at least a portion of the substrate and the first low-k dielectric layer structure, and a first blocking layer pattern structure spaced apart from the via structure in the first low-k dielectric layer structure. The first blocking layer pattern structure surrounds a sidewall of the first blocking layer structure.Type: ApplicationFiled: November 20, 2014Publication date: May 21, 2015Inventors: Eun-Ji KIM, Sung-Dong CHO, Sin-Woo KANG, Myung-Soo JANG, Yeong-Lyeol PARK, Seung-Teak LEE
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Publication number: 20150130075Abstract: Provided is a semiconductor device. A semiconductor chip is disposed on a substrate. A first magnetic substance, a second magnetic substance and a third magnetic substance which are spaced apart from one another are formed on the semiconductor chip. The first magnetic substance and the second magnetic substance can be adjacent an edge of the semiconductor chip. The third magnetic substance can be adjacent a center of the semiconductor chip. The third magnetic substance is between the first magnetic substance and the second magnetic substance.Type: ApplicationFiled: July 14, 2014Publication date: May 14, 2015Inventors: Sang-Wook Ji, Hyoung-Yol Mun, Yeong-Lyeol Park, In-Kyum Lee
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Publication number: 20150064899Abstract: Provided is a method of fabricating a semiconductor device. In one embodiment, the method includes forming at least one unit device in a substrate and on a front side of the substrate, forming a through-silicon via (TSV) structure apart from the at least one unit device to substantially vertically penetrate the substrate, the TSV structure having a back end including a concave portion, forming an internal circuit on the front side of the substrate and a front end of the TSV structure to be electrically connected to the at least one unit device and the front end of the TSV structure, forming a front side bump on the front side of the substrate to be electrically connected to the front end of the TSV structure, forming a redistribution layer on a back side of the substrate to be electrically connected to the back end of the TSV structure, and forming a back side bump to be electrically connected to the redistribution layer.Type: ApplicationFiled: April 7, 2014Publication date: March 5, 2015Applicant: Samsung Electronics Co., Ltd.Inventors: SANG-WOOK JI, YEONG-LYEOL PARK, HYOUNG-YOL MUN, IN-KYUM LEE
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Patent number: 8890282Abstract: An integrated circuit device includes a substrate having a plurality of device patterns thereon. A device isolation layer is provided on the substrate, an interlayer dielectric layer is provided on the device isolation layer and the substrate, and a conductive via extends through the interlayer dielectric layer and the device isolation layer and into the substrate. A conductive via contact pad is provided on the interlayer dielectric layer in electrical contact with the conductive via. In plan view, the conductive via contact pad is confined within an area of the interlayer dielectric layer and/or an area of the device isolation layer that electrically insulates the conductive via contact pad from the substrate. Related methods and devices are also discussed.Type: GrantFiled: August 29, 2013Date of Patent: November 18, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Woon-Seob Lee, Sin-Woo Kang, Ki-Young Yun, Sung-Dong Cho, Eun-Ji Kim, Yeong-Lyeol Park
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Patent number: 8841754Abstract: A semiconductor device having a via structure in a stress relief layer is provided. The semiconductor device may include an isolation layer on the circuit region, a stress relief layer on the via region, and a via structure in the stress relief layer and the substrate. The stress relief layer may have a thickness larger than that of the isolation layer and a stepped cross section.Type: GrantFiled: February 8, 2013Date of Patent: September 23, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sin-Woo Kang, Jang-Ho Kim, Woon-Seob Lee, Jong-Hoon Cho, Sung-Dong Cho, Yeong-Lyeol Park
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Patent number: 8836109Abstract: A semiconductor device includes a substrate having a via region and a circuit region, an insulation interlayer formed on a top surface of the substrate, a through electrode having a first surface and a second surface, wherein the through electrode penetrates the via region of the substrate and the second surface is substantially coplanar with a bottom surface of the substrate, a first upper wiring formed on a portion of the first surface of the through electrode, a plurality of via contacts formed on a portion of a top surface of the first upper wiring, and a second upper wiring formed on the plurality of via contacts.Type: GrantFiled: January 30, 2012Date of Patent: September 16, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Ki-Young Yun, Yeong-Lyeol Park, Ki-Soon Bae, Woon-Seob Lee, Sung-Dong Cho, Sin-Woo Kang, Sang-Wook Ji, Eun-Ji Kim
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Publication number: 20140225113Abstract: An interposer chip may include a substrate, a plurality of upper terminals, a plurality of lower terminals, a first conductive pattern that electrically connects the first upper terminal to a first set of one or more lower terminals, a second conductive pattern that electrically connects the second upper terminal to a second set of one or more lower terminals and a cut test pattern disposed between the first conductive pattern and the second conductive pattern, the test pattern used for testing electrical characteristics of the first conductive pattern and the second conductive pattern.Type: ApplicationFiled: April 22, 2014Publication date: August 14, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Yeong-Lyeol PARK, Sung-Dong CHO, Sin-Woo KANG
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Patent number: 8729684Abstract: An interposer chip may include a substrate, a plurality of upper terminals, a plurality of lower terminals, a first conductive pattern that electrically connects the first upper terminal to a first set of one or more lower terminals, a second conductive pattern that electrically connects the second upper terminal to a second set of one or more lower terminals and a cut test pattern disposed between the first conductive pattern and the second conductive pattern, the test pattern used for testing electrical characteristics of the first conductive pattern and the second conductive pattern.Type: GrantFiled: August 23, 2011Date of Patent: May 20, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Yeong-Lyeol Park, Sung-Dong Cho, Sin-Woo Kang
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Publication number: 20140124951Abstract: An integrated circuit device includes a substrate having a plurality of device patterns thereon. A device isolation layer is provided on the substrate, an interlayer dielectric layer is provided on the device isolation layer and the substrate, and a conductive via extends through the interlayer dielectric layer and the device isolation layer and into the substrate. A conductive via contact pad is provided on the interlayer dielectric layer in electrical contact with the conductive via. In plan view, the conductive via contact pad is confined within an area of the interlayer dielectric layer and/or an area of the device isolation layer that electrically insulates the conductive via contact pad from the substrate. Related methods and devices are also discussed.Type: ApplicationFiled: August 29, 2013Publication date: May 8, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Woon-Seob Lee, Sin-Woo Kang, Ki-Young Yun, Sung-Dong Cho, Eun-Ji Kim, Yeong-Lyeol Park
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Publication number: 20140084375Abstract: Semiconductor devices are provided including an internal circuit on a front side of a substrate, the substrate defining a through-silicon via (TSV) structure extending vertically therein; a back side insulating layer on a back side of the substrate; and a back side bonding structure on the back side insulating layer. The TSV structure includes a front side end on a front side of the substrate and contacts the internal circuit and a back side end extending toward a back side of the substrate. The back side bonding structure includes a back side bonding interconnection portion on the back side insulating layer defining a back side bonding via hole therein and a back side bonding via plug portion in the contact plug hole in the back side insulating layer connected to a back side end of the TSV structure.Type: ApplicationFiled: August 1, 2013Publication date: March 27, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Woon-Seob Lee, Sin-Woo Kang, Yeong-Lyeol Park, Jang-Ho Kim, Ki-Young Yun
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Patent number: 8592988Abstract: A semiconductor device may include a substrate and a through electrode. The substrate may have a first surface and a second surface opposite to the first surface, the substrate including circuit patterns formed on the first surface. The through electrode penetrates the substrate and may be electrically connected to the circuit pattern, the through electrode including a first plug that extends from the first surface in a thickness direction of the substrate and a second plug that extends from the second surface in the thickness direction of the substrate so as to be connected to the first plug.Type: GrantFiled: July 19, 2011Date of Patent: November 26, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Ho-Jin Lee, Sung-Dong Cho, Se-Young Jeong, Yeong-Lyeol Park, Sin-Woo Kang
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Publication number: 20130249045Abstract: A semiconductor device having a via structure in a stress relief layer is provided. The semiconductor device may include an isolation layer on the circuit region, a stress relief layer on the via region, and a via structure in the stress relief layer and the substrate. The stress relief layer may have a thickness larger than that of the isolation layer and a stepped cross section.Type: ApplicationFiled: February 8, 2013Publication date: September 26, 2013Applicant: Samsung Electronics Co., Ltd.Inventors: Sin-Woo Kang, Jang-Ho Kim, Woon-Seob Lee, Jong-Hoon Cho, Sung-Dong Cho, Yeong-Lyeol Park