Abstract: A display device includes a light blocking layer positioned on a substrate and including a first portion and a second portion having a thickness greater than a thickness of the first portion; a buffer layer positioned above the light blocking layer; a semiconductor layer positioned over the buffer layer and including a source region, a channel region, and a drain region; a gate insulating layer positioned over the semiconductor layer; a gate electrode positioned over the gate insulating layer; an interlayer insulating layer positioned over the gate electrode, and including a first opening overlapping the second portion of the light blocking layer in a plan view and a second opening overlapping the source region of the semiconductor layer in a plan view; and a dummy gate electrode positioned on a side surface of the first opening.

Abstract: A display device includes a substrate, a first transistor including a channel on the substrate, a first electrode and a second electrode, and a gate electrode overlapping the channel of the first transistor, a first interlayer insulation layer on the first and second electrodes of the first transistor, a second transistor including a channel disposed on the first interlayer insulation layer, a first electrode and a second electrode of the second transistor, and a gate electrode that overlaps the channel of the second transistor, a first connection electrode disposed on the first interlayer insulation layer, and connected with the first electrode of the first transistor, a gate insulation layer disposed between the first interlayer insulation layer and the first connection electrode, and a second connection electrode that connects the first connection electrode and the first electrode of the second transistor.

Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.

Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.

Abstract: A light emitting diode display device including: an organic light emitting diode including an anode electrode; a first transistor for providing a current to the anode electrode of the organic light emitting diode; a second transistor for transmitting a voltage to a gate electrode of the first transistor; a first capacitor for storing the voltage transmitted to the gate electrode of the first transistor; and a second capacitor disposed between a first electrode of the second transistor and a data line, wherein the first electrode of the second transistor is directly connected to the anode electrode of the organic light emitting diode.

Abstract: A light emitting diode display device including: an organic light emitting diode including an anode electrode; a first transistor for providing a current to the anode electrode of the organic light emitting diode; a second transistor for transmitting a voltage to a gate electrode of the first transistor; a first capacitor for storing the voltage transmitted to the gate electrode of the first transistor; and a second capacitor disposed between a first electrode of the second transistor and a data line, wherein the first electrode of the second transistor is directly connected to the anode electrode of the organic light emitting diode,

Abstract: A display device according to an embodiment includes: a first metal layer disposed on a substrate; a first insulating layer disposed on the first metal layer; a first transistor disposed on the first insulating layer and including a semiconductor layer; and a light-emitting device electrically connected to the first transistor, wherein the first metal layer includes a first portion with a first thickness and a second portion with a second thickness, the second thickness is greater than the first thickness, and the semiconductor layer is electrically connected to the first metal layer.

Abstract: A display device includes a substrate, a first transistor including a channel on the substrate, a first electrode and a second electrode, and a gate electrode overlapping the channel of the first transistor, a first interlayer insulation layer on the first and second electrodes of the first transistor, a second transistor including a channel disposed on the first interlayer insulation layer, a first electrode and a second electrode of the second transistor, and a gate electrode that overlaps the channel of the second transistor, a first connection electrode disposed on the first interlayer insulation layer, and connected with the first electrode of the first transistor, a gate insulation layer disposed between the first interlayer insulation layer and the first connection electrode, and a second connection electrode that connects the first connection electrode and the first electrode of the second transistor.

Abstract: A light emitting diode display device including: an organic light emitting diode including an anode electrode; a first transistor for providing a current to the anode electrode of the organic light emitting diode; a second transistor for transmitting a voltage to a gate electrode of the first transistor; a first capacitor for storing the voltage transmitted to the gate electrode of the first transistor; and a second capacitor disposed between a first electrode of the second transistor and a data line, wherein the first electrode of the second transistor is directly connected to the anode electrode of the organic light emitting diode.

Abstract: A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.

Abstract: A light emitting diode display device including: an organic light emitting diode including an anode electrode; a first transistor for providing a current to the anode electrode of the organic light emitting diode; a second transistor for transmitting a voltage to a gate electrode of the first transistor; a first capacitor for storing the voltage transmitted to the gate electrode of the first transistor; and a second capacitor disposed between a first electrode of the second transistor and a data line, wherein the first electrode of the second transistor is directly connected to the anode electrode of the organic tight emitting diode.

Abstract: An organic light emitting display device includes a substrate including a pixel region and a peripheral region, a first wiring, a second wiring, a third wiring, and an electrostatic protection structure including electrostatic protection diodes coupled to the first, second, and third wirings. The electrostatic protection diodes each include an active pattern, a gate electrode pattern, and a connection pattern. The active pattern is at the peripheral region of the substrate, and has a first region, a second region spaced apart from the first region, and a third region between the first and second regions. The gate electrode pattern is at the third region on the active pattern. The connection pattern is coupled to the gate electrode pattern and the active pattern and is on the gate electrode pattern, and overlaps a portion of the first region of the active pattern and a portion of the third region.

Abstract: An organic light emitting display device includes a substrate including a pixel region and a peripheral region, a first wiring, a second wiring, a third wiring, and an electrostatic protection structure including electrostatic protection diodes coupled to the first, second, and third wirings. The electrostatic protection diodes each include an active pattern, a gate electrode pattern, and a connection pattern. The active pattern is at the peripheral region of the substrate, and has a first region, a second region spaced apart from the first region, and a third region between the first and second regions. The gate electrode pattern is at the third region on the active pattern. The connection pattern is coupled to the gate electrode pattern and the active pattern and is on the gate electrode pattern, and overlaps a portion of the first region of the active pattern and a portion of the third region.

Abstract: In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×1015cm?3 or less, and a mobility satisfies 15 cm2/Vs or more.

Abstract: The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.

Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.

Abstract: Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.

Abstract: In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×1015cm?3 or less, and a mobility satisfies 15 cm2/Vs or more.

Abstract: A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.

Abstract: Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.