Abstract: A substrate is provided having a dual damascene structure formed within a dielectric material over the substrate. The dual damascene structure includes a trench and an opening formed to extend from a bottom of the trench to an underlying conductive material, with the underlying conductive material exposed at a bottom of the opening. The dual damascene structure is exposed to a sealing process by which the exposed surfaces of the dielectric material in the opening are sealed without covering the underlying conductive material exposed at the bottom of the opening. The sealing process can be one or more of deposition of a flowable film, deposition of an amorphous carbon barrier layer, and formation of a self-assembled monolayer of an amino group. After the sealing process, an electroless deposition process is performed to fill the opening with a metallic material in a bottom-to-top manner up to the bottom of the trench.

Abstract: A method for depositing metal or metal alloy on a substrate includes preparing a mixture including a hydroxide, a polyol solvent, a metal precursor and a complexing agent, wherein the mixture does not include water; applying the mixture to a substrate including exposed metal surfaces to selectively deposit metal onto the exposed metal surfaces of the substrate; and heating the mixture to a predetermined deposition temperature range from 120° C. and 160° C. at least one of before or after applying the mixture to the substrate.

Abstract: A substrate is provided having a dual damascene structure formed within a dielectric material over the substrate. The dual damascene structure includes a trench and an opening formed to extend from a bottom of the trench to an underlying conductive material, with the underlying conductive material exposed at a bottom of the opening. The dual damascene structure is exposed to a sealing process by which the exposed surfaces of the dielectric material in the opening are sealed without covering the underlying conductive material exposed at the bottom of the opening. The sealing process can be one or more of deposition of a flowable film, deposition of an amorphous carbon barrier layer, and formation of a self-assembled monolayer of an amino group. After the sealing process, an electroless deposition process is performed to fill the opening with a metallic material in a bottom-to-top manner up to the bottom of the trench.

Abstract: A solution for electroless deposition of platinum is provided. The solution comprises Co2+ ions, Pt4+ ions, and amine ligands. A ratio of Co2+ to Pt4+ ion is between 100:1 and 2:1. The solution allows for electroless deposition of platinum without requiring high temperatures and high pH. The solution allows for the deposition of a pure platinum layer.

Abstract: A method for providing a metal diffusion barrier layer comprising providing a substrate including a metal layer; depositing a dielectric layer on the metal layer; defining a feature in the dielectric layer, wherein the feature includes side walls defined by the dielectric layer and a bottom surface defined by the metal layer; selectively depositing a metal diffusion barrier layer on the side walls of the feature and not depositing the metal diffusion barrier layer on the bottom surface of the feature, wherein the metal diffusion barrier layer includes amorphous carbon; and depositing metal in the feature.

Abstract: A method for selectively depositing a ferromagnetic layer on a conducting layer, includes providing a substrate including a conducting layer; preparing a solution including a metal salt; adding a complexing agent to the solution; adding a reducing agent to the solution; while a temperature of the solution is less than 75° C., immersing the substrate in the solution for a predetermined period to deposit a ferromagnetic layer on the conducting layer by electroless deposition, wherein the ferromagnetic layer comprises one of cobalt (Co), iron (Fe) or CoFe; and after the predetermined period, removing the substrate from the solution.

Abstract: A method for providing an electroless plating of a platinum containing layer is provided. A Ti3+ stabilization solution is provided. A Pt4+ stabilization solution is provided. A flow from the Ti3+ stabilization solution is combined with a flow from the Pt4+ stabilization solution and water to provide a diluted mixture of the Ti3+ stabilization solution and the Pt4+ stabilization solution. A substrate is exposed to the diluted mixture of the Ti3+ stabilization solution and the Pt4+ stabilization solution.

Abstract: A solution for electroless deposition of cobalt is provided. A reducing agent of Ti3+ ions is provided to the solution. Co2+ ions are provided to the solution.

Abstract: A method for selectively depositing a ferromagnetic layer on a conducting layer, includes providing a substrate including a conducting layer; preparing a solution including a metal salt; adding a complexing agent to the solution; adding a reducing agent to the solution; while a temperature of the solution is less than 75° C., immersing the substrate in the solution for a predetermined period to deposit a ferromagnetic layer on the conducting layer by electroless deposition, wherein the ferromagnetic layer comprises one of cobalt (Co), iron (Fe) or CoFe; and after the predetermined period, removing the substrate from the solution.

Abstract: A proximity heads for dispensing reactants and purging gas to deposit a thin film by Atomic Layer Deposition (ALD) includes a plurality of sides. Extending over a portion of the substrate region and being spaced apart from the portion of the substrate region when present, the proximity head is rotatable so as to place each side in a direction of the substrate region, and is disposed in a vacuum chamber coupled to a carrier gas source to sustain a pressure for the proximity head during operation. Each side of the proximity head includes a gas conduit through which the reactant gas and the purging gas are sequentially dispensed, and at least two separate vacuum conduits on each side of the gas conduit to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate.

Abstract: A substrate is provided having a dual damascene structure formed within a dielectric material over the substrate. The dual damascene structure includes a trench and an opening formed to extend from a bottom of the trench to an underlying conductive material, with the underlying conductive material exposed at a bottom of the opening. The dual damascene structure is exposed to a sealing process by which the exposed surfaces of the dielectric material in the opening are sealed without covering the underlying conductive material exposed at the bottom of the opening. The sealing process can be one or more of deposition of a flowable film, deposition of an amorphous carbon barrier layer, and formation of a self-assembled monolayer of an amino group. After the sealing process, an electroless deposition process is performed to fill the opening with a metallic material in a bottom-to-top manner up to the bottom of the trench.

Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

Abstract: A solution for electroless deposition of cobalt is provided. A reducing agent of Ti3+ ions is provided to the solution. Co2+ ions are provided to the solution.

Abstract: A solution for electroless deposition of nickel is provided. A reducing agent of Ti3+ ion is provided to the solution. Ni2+ ions are provided to the solution.

Abstract: A solution for electroless deposition of palladium is provided. A reducing agent of Co2+ or Ti3+ ions is provided to the solution. Pd2+ ions are provided to the solution.

Abstract: A solution for electroless deposition of platinum is provided. The solution comprises Co2+ ions, Pt4+ ions, and amine ligands. A ratio of Co2+ to Pt4+ ion is between 100:1 and 2:1. The solution allows for electroless deposition of platinum without requiring high temperatures and high pH. The solution allows for the deposition of a pure platinum layer.

Abstract: A cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment. And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment.

Abstract: A method for providing an electroless plating of a platinum containing layer is provided. A Ti3+ stabilization solution is provided. A Pt4+ stabilization solution is provided. A flow from the Ti3+ stabilization solution is combined with a flow from the Pt4+ stabilization solution and water to provide a diluted mixture of the Ti3+ stabilization solution and the Pt4+ stabilization solution. A substrate is exposed to the diluted mixture of the Ti3+ stabilization solution and the Pt4+ stabilization solution.

Abstract: A method for processing an interconnect structure on a substrate is provided, including: depositing a metallic barrier layer to line the interconnect structure, the metallic barrier layer configured to prevent diffusion of copper into the dielectric layer; depositing a thin copper seed layer over the metallic barrier layer in the interconnect structure; depositing a gap-fill copper layer over the thin copper seed layer; removing copper overburden and metallic barrier overburden, wherein removing copper overburden and metallic barrier overburden creates a planarized copper surface on the gap-fill copper layer; selectively depositing a thin layer of a cobalt-containing material on the reduced planarized copper surface; wherein the substrate is processed and transferred in controlled environments to minimize exposure to oxygen, the controlled environments defined by one or more controlled ambient environments and/or one or more vacuum environments.

Abstract: Back-End of Line (BEoL) interconnect structures, and methods for their manufacture, are provided. The structures are characterized by narrower conductive lines and reduced overall dielectric constant values. Conformal diffusion barrier layers, and selectively formed capping layers, are used to isolate the conductive lines and vias from surrounding dielectric layers in the interconnect structures. The methods of the invention employ techniques to narrow the openings in photoresist masks in order to define narrower vias. More narrow vias increase the amount of misalignment that can be tolerated between the vias and the conductive lines.