Patents by Inventor Yi Chen

Yi Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240120030
    Abstract: The present application provides a method for analyzing droplets on the basis of volume distribution including obtaining a total volume V of a sample containing target molecules based on a system prepared using the sample. The system is emulsified into droplets. A droplet system is obtained when the droplets obtaining the sample executes an amplification reaction. A droplet image of the droplet system is obtained. A total number n of droplets included in the droplet system is obtained based on the droplet image. A droplet volume distribution of the droplet system is obtained based on the droplet image. A number j of negative droplets among the n droplets is counted. A quantitative analysis is performed for the target molecules according to the total volume V of the sample, the total number n of droplets, the droplet volume distribution information, and the number j of negative droplets.
    Type: Application
    Filed: January 13, 2021
    Publication date: April 11, 2024
    Inventors: YUN XIA, XIA ZHAO, YANG XI, YI WEI, FANG CHEN, HUI JIANG
  • Publication number: 20240120845
    Abstract: A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. The second driving signal includes a resonant pulse having a resonant pulse width and a ZVS pulse during the DCM operation. The resonant pulse is configured to demagnetize the transformer. The resonant pulse has a first minimum resonant period for a first level of the output load and a second minimum resonant period for a second level of the output load. The first level is higher than the second level and the second minimum resonant period is shorter than the first minimum resonant period.
    Type: Application
    Filed: April 14, 2023
    Publication date: April 11, 2024
    Inventors: Yu-Chang Chen, Ta-Yung Yang, Kun-Yu Lin, Hsin-Yi Wu
  • Publication number: 20240120844
    Abstract: A resonant flyback power converter includes: a first and a second transistors which form a half-bridge circuit for switching a transformer and a resonant capacitor to generate an output voltage; a current-sense device for sensing a switching current of the half-bridge circuit to generate a current-sense signal; and a switching control circuit generating a first and a second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal controls the half-bridge circuit to generate a positive current to magnetize the transformer and charge the resonant capacitor. The turn-on of the second driving signal controls the half-bridge circuit to generate a negative current to discharge the resonant capacitor. The switching control circuit turns off the first transistor when the positive current exceeds a positive-over-current threshold, and/or, turns off the second transistor when the negative current exceeds a negative-over-current threshold.
    Type: Application
    Filed: April 10, 2023
    Publication date: April 11, 2024
    Inventors: Kun-Yu LIN, Ta-Yung YANG, Yu-Chang CHEN, Hsin-Yi WU, Fu-Ciao SYU, Chia-Hsien YANG
  • Publication number: 20240120410
    Abstract: A semiconductor structure includes a semiconductor epitaxial layer, a first semiconductor well, a second semiconductor well, a source doped region, a gate structure and a drain structure. The semiconductor epitaxial layer includes a first side and a second side opposite to the first side. The first semiconductor well is located on the first side of the semiconductor epitaxial layer. The second semiconductor well is located on the second side of the semiconductor epitaxial layer. The source doped region is located in the first semiconductor well. The gate structure overlaps the first semiconductor well and the source doped region on the first side of the semiconductor epitaxial layer. The drain structure includes a semiconductor substrate. The second side of the semiconductor epitaxial layer outside the second semiconductor well includes a connecting surface. The connecting surface of the semiconductor epitaxial layer is connected to the semiconductor substrate.
    Type: Application
    Filed: February 16, 2023
    Publication date: April 11, 2024
    Inventors: Yu-Tsu LEE, Yan-Ru CHEN, Chao-Yi CHANG, Kuang-Hao CHIANG
  • Publication number: 20240116910
    Abstract: The present disclosure relates to the use of substituted heterocycles for the inhibition of the activity of WIP1. Suitably, the present disclosure relates to the use of substituted heterocycles for the treatment of cancer.
    Type: Application
    Filed: September 14, 2023
    Publication date: April 11, 2024
    Inventors: Binh Vu, Romyr Dominique, Yi Chen, Hongju Li
  • Publication number: 20240117174
    Abstract: A PVC resin composition and a method for manufacturing a pipe having high heat resistance and transparency are provided. The PVC resin composition includes 100 phr of a PVC resin, 0.5 phr to 5 phr of a modifier, and 1 phr to 10 phr of a heat resistance improving agent. A degree of polymerization of the PVC resin is from 800 to 1,350. The modifier is a polymer containing a first monomer and a second monomer. The first monomer is ethylene or a derivative of the ethylene, and the second monomer is a polyester.
    Type: Application
    Filed: December 13, 2022
    Publication date: April 11, 2024
    Inventors: TE-CHAO LIAO, HAN-CHING HSU, CHUN-LAI CHEN, WEN-YI WU
  • Publication number: 20240119885
    Abstract: A compensation method for a display panel and a compensation device thereof are provided in embodiments of the present application. The compensation method for the display panel includes: for each single gray scale image of a preset color displayed by a panel to be compensated, obtaining a corresponding image parameter group, for each single gray scale image of the preset color displayed by the panel to be compensated, obtaining a corresponding fitting determination coefficient according to the image parameter group, obtaining gray scale binding points of the preset color of the panel to be compensated according to the fitting determination coefficients, obtaining compensation parameters corresponding to the gray scale binding points of the preset color, and performing display compensation on the panel to be compensated according to the compensation parameters corresponding to the gray scale binding points.
    Type: Application
    Filed: December 28, 2022
    Publication date: April 11, 2024
    Applicant: TCL China Star Optoelectronics Technology Co., Ltd.
    Inventor: Yi CHEN
  • Publication number: 20240119200
    Abstract: A method of building a characteristic model includes: acquiring raw electrical data from a measurement system outside one or more processing units; acquiring operational state-related data from an information collector inside the one or more processing units; performing a data annealing process on the raw electrical data and the operational state-related data to obtain and purified electrical data and purified operational state-related data; and performing a machine learning (ML)-based process to build the characteristic model based on the purified electrical data and the purified operational state-related data.
    Type: Application
    Filed: October 3, 2023
    Publication date: April 11, 2024
    Applicant: MEDIATEK INC.
    Inventors: Yu-Jen Chen, Chien-Chih Wang, Wen-Wen Hsieh, Ying-Yi Teng
  • Publication number: 20240117024
    Abstract: The present disclosure provides an antibody specifically targeting cardiac troponin I. The present disclosure further provides antibody pairs and kits comprising the antibodies. The present disclosure further provides the use of these antibodies to detect levels of cardiac troponin I, and to diagnose myocardial injury.
    Type: Application
    Filed: October 2, 2023
    Publication date: April 11, 2024
    Applicant: SHENZHEN MINDRAY BIO-MEDICAL ELECTRONICS CO., LTD.
    Inventors: Ludmila V. AGEEVA, Anastasia V. BEREZNIKOVA, Agnessa P. BOGOMOLOVA, Alexey G. KATRUKHA, Stanislav V. KOZLOVSKY, Anfisa S. POPOVA, Alexander B. POSTNIKOV, Fedor N. ROZOV, Natalia N. TAMM, Yi ZHANG, Sheng LUO, Puguang CHEN
  • Publication number: 20240117172
    Abstract: A composition and a manufacturing method of a highly flame-retardant and low-smoke injection-molded polyvinyl chloride pipe are provided. The composition includes a polyvinyl chloride resin material, a chlorinated polyvinyl chloride resin material, a flame retardant additive and a carbon forming additive. A first number-average degree of polymerization (DPn) of the polyvinyl chloride resin material is between 600 and 1,000. A second number-average degree of polymerization of the chlorinated polyvinyl chloride resin material is between 600 and 800. A difference between the first number-average degree of polymerization and the second number-average degree of polymerization is within 400. The flame retardant additive is a phosphorus-containing flame retardant modified by a modifier. A total added amount of the flame retardant additive and the carbon forming additive in the composition is not greater than 3 PHR.
    Type: Application
    Filed: November 29, 2022
    Publication date: April 11, 2024
    Inventors: TE-CHAO LIAO, HAN-CHING HSU, CHUN-LAI CHEN, WEN-YI WU
  • Publication number: 20240122078
    Abstract: A semiconductor memory device includes a substrate having a conductor region thereon, an interlayer dielectric layer on the substrate, and a conductive via electrically connected to the conductor region. The conductive via has a lower portion embedded in the interlayer dielectric layer and an upper portion protruding from a top surface of the interlayer dielectric layer. The upper portion has a rounded top surface. A storage structure conformally covers the rounded top surface.
    Type: Application
    Filed: December 18, 2023
    Publication date: April 11, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Chang Hsu, Tang-Chun Weng, Cheng-Yi Lin, Yung-Shen Chen, Chia-Hung Lin
  • Patent number: 11952656
    Abstract: A physical vapor deposition (PVD) system is disclosed. The PVD system includes a pedestal configured to hold a semiconductor wafer, a cover plate configured to hold a target, and a collimator between the pedestal and the cover plate. The collimator includes a plurality of passages configured to pass source material travelling from the cover plate toward the pedestal at an angle less than a threshold angle with respect to a line perpendicular to a surface of the pedestal facing the cover plate, where the collimator is configured to block source material travelling from the cover plate toward the pedestal at an angle greater than the threshold angle, where a first passage of the plurality of passages has a first passage length, where a second passage of the plurality of passages has a second passage length, and where the first passage length is less than the second passage length.
    Type: Grant
    Filed: March 22, 2022
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuan-Lin Chen, Tsung-Yi Chou, Wei-Der Sun, Hao-Wei Kang
  • Patent number: 11952495
    Abstract: The present disclosure provides for compounds of Formula (I), its corresponding compounds of Formula (II) or salts thereof and their use as fluorogenic pH sensors.
    Type: Grant
    Filed: October 11, 2021
    Date of Patent: April 9, 2024
    Assignee: Life Technologies Corporation
    Inventors: Yi-Zhen Hu, Aimei Chen, Daniel Beacham, Chrisgen Vonnegut, Krishnamurthy Nacharaju
  • Patent number: 11956082
    Abstract: Aspects presented herein may enhance a HARQ feedback operation to improve data retransmissions by using tri-state HARQ feedback, and may enable a UE to construct a codebook for tri-state HARQ feedback. In one aspect, a UE determines whether tri-state HARQ feedback or bi-state HARQ feedback is configured based on a DL carrier. The UE generates HARQ feedback for at least one of a received PDCCH or a received PDSCH on the DL carrier based on the determination whether the DL carrier is configured with the tri-state HARQ feedback. The UE transmits the generated HARQ feedback.
    Type: Grant
    Filed: June 9, 2021
    Date of Patent: April 9, 2024
    Assignee: QUALCOMM Incorporated
    Inventors: Wei Yang, Yi Huang, Wanshi Chen, Peter Gaal, Hwan Joon Kwon, Krishna Kiran Mukkavilli, Tingfang Ji
  • Patent number: 11954415
    Abstract: An early warning method for safety production risk of tailings pond based on risk ranking is provided. The early warning method includes: monitoring and collecting internal basic data of a tailings pond in real-time, and performing a basic monitoring and a basic early warning; collecting geographical location data, meteorological data, and historical geological disaster data of an area where the tailings pond is located; performing risk ranking on a safety production risk of the tailings pond, thereby obtaining a risk level of the tailings pond; and collecting case data of global tailings pond accidents and hazard degree data thereof, acquiring accident solution strategies for the global tailings pond accidents, performing management and monitoring on the tailings pond, setting parameters in a process of the basic monitoring, and performing a ranked early warning on the safety production risk of the tailings pond based on the risk level.
    Type: Grant
    Filed: November 9, 2023
    Date of Patent: April 9, 2024
    Assignees: China Academy of Safety Science and Technology, Jiangxi Emergency Management Science Research Institute
    Inventors: Youliang Chen, Haigang Li, Shigen Fu, Yanyu Chu, Qing Wang, Shouyin Wang, Zhentao Li, Yi Liu, Xiangliang Tian, Tao Chen, Jia Li, Xiaolong Zheng, Pangfeng Guo, Shuang Chen
  • Patent number: 11952829
    Abstract: The door sill includes a sill deck and a rail carrier assembly having a function of height adjustment. The rail carrier assembly is configured on the sill deck. The rail carrier assembly includes a rail cap, a rail carrier, an adjustment nut and an adjustment screw. The rail cap is snapped onto an upper end of the rail carrier. A groove is formed in the sill deck for the rail carrier to fit in. A nut installation hole is formed in the rail carrier. The adjustment nut is assembled at the nut installation hole, and is in threaded fit with the adjustment screw. The adjustment screw drives the adjustment nut to move up or down in an axial direction of the adjustment screw through rotation, thereby altering the height of the rail carrier fitted in the groove and altering the height of the rail cap.
    Type: Grant
    Filed: December 26, 2022
    Date of Patent: April 9, 2024
    Assignee: QINGDAO SEA NOVA BUILDING PROFILES PRODUCTS CO., LTD.
    Inventors: Minghui Chen, Yi Cao, James William Meeks, Xuhui Wu
  • Patent number: 11951569
    Abstract: In some embodiments, the present disclosure relates to a wafer edge trimming apparatus that includes a processing chamber defined by chamber housing. Within the processing chamber is a wafer chuck configured to hold onto a wafer structure. Further, a blade is arranged near an edge of the wafer chuck and configured to remove an edge potion of the wafer structure and to define a new sidewall of the wafer structure. A laser sensor apparatus is configured to direct a laser beam directed toward a top surface of the wafer chuck. The laser sensor apparatus is configured to measure a parameter of an analysis area of the wafer structure. Control circuitry is to the laser sensor apparatus and the blade. The control circuitry is configured to start a damage prevention process when the parameter deviates from a predetermined threshold value by at least a predetermined shift value.
    Type: Grant
    Filed: May 12, 2021
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Ming Wu, Yung-Lung Lin, Hau-Yi Hsiao, Sheng-Chau Chen, Cheng-Yuan Tsai
  • Patent number: 11955309
    Abstract: An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.
    Type: Grant
    Filed: July 7, 2021
    Date of Patent: April 9, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Zheng-Yang Li, Chian-Chen Kuo, Yi-Cheng Lu, Ji-Fu Kung
  • Patent number: 11955444
    Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first conductive structure disposed within a first layer of the semiconductor structure. The semiconductor structure includes a dielectric structure disposed within a second layer of the semiconductor structure, with the second layer being disposed on the first layer. The semiconductor structure includes a second conductive structure disposed within a recessed portion of the dielectric structure that extends to the first conductive structure, with the second conductive structure having a concave recessed portion on a top surface of the second conductive structure. The semiconductor structure includes multiple layers of conductive material disposed within the concave recessed portion of the second conductive structure.
    Type: Grant
    Filed: October 13, 2021
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Manikandan Arumugam, Tsung-Yi Yang, Chien-Chih Chen, Mu-Han Cheng, Kuo-Hsien Cheng
  • Patent number: 11955694
    Abstract: An antenna component is provided. An orthographic projection of auxiliary antennas on a clearance area is entirely located in, partly located in, or close to a radiation-sensitive area where a specific absorption ratio (SAR) value of a frequency band needs to be reduced, so that a signal emitted from the radiation-sensitive area where the SAR value of the frequency band needs to be reduced on a primary antenna may be absorbed by the auxiliary antennas, and the auxiliary antennas generate secondary radiation.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: April 9, 2024
    Assignee: HuiZhou TCL Mobile Communication Co., Ltd.
    Inventors: Yi Huang, Lei Chen, Wei Chen, Yibing Chen