Abstract: A vibration transducer for sensing vibrations includes a first flexible triboelectric member, a second flexible triboelectric member, a plurality of attachment points, a first electrode and a second electrode. The first flexible triboelectric member includes a first triboelectric layer and a material being on a first position on a triboelectric series. A conductive layer is deposited on the second side thereof. The second flexible triboelectric member includes a second triboelectric layer and a material being on a second position on the triboelectric series that is different from the first position on the triboelectric series. The second triboelectric member is adjacent to the first flexible triboelectric member. When the first triboelectric member comes into and out of contact with the second triboelectric member as a result of the vibrations, a triboelectric potential difference having a variable intensity corresponding to the vibrations can be sensed between the first and second triboelectric members.

Abstract: A substrate processing apparatus for processing a wafer including a temporary substrate and a semiconductor device. The substrate processing apparatus includes a first half portion, a second half portion and a liquid supply unit. The first half portion includes a working platform. The second half portion includes an upper cover having a first surface and a plurality of second holes. The liquid supply unit provides a liquid. The wafer is placed on the working platform, and a second surface of the semiconductor device and the first surface are spaced by a distance sufficient for allowing the liquid to come into contact with the first surface when the liquid flows at the second surface to generate a suction force on the second surface. As such, a peel force is formed between the temporary substrate and the semiconductor device to cause the two to separate from each other.

Abstract: A substrate processing apparatus for processing a wafer including a temporary substrate and a semiconductor device. The substrate processing apparatus includes a first half portion, a second half portion and a liquid supply unit. The first half portion includes a working platform. The second half portion includes an upper cover having a first surface and a plurality of second holes. The liquid supply unit provides a liquid. The wafer is placed on the working platform, and a second surface of the semiconductor device and the first surface are spaced by a distance sufficient for allowing the liquid to come into contact with the first surface when the liquid flows at the second surface to generate a suction force on the second surface. As such, a peel force is formed between the temporary substrate and the semiconductor device to cause the two to separate from each other.

Abstract: A miniature wafer processing apparatus includes a first half portion, a second half portion, a gas supply unit, a liquid supply unit, a ring sealing member disposed at peripheries of the first half portion and the second half portion, and a liquid recycling member. The first half portion includes a first hole disposed at a work platform. The second half portion includes an upper cover correspondingly covering the work platform to form a processing chamber, and a second hole disposed at the upper cover. The gas supply unit and the liquid supply unit are in communication with the first hole and the second hole. The liquid recycling member includes a recycling tube, a discharging tube and a filtering portion. With the first half portion and the second half portion, the processing chamber and the overall volume can be reduced.

Abstract: A non-contact wafer transport device for transporting a wafer to be transported includes a base, a moving arm, a tube disposed in the moving arm and a negative pressure device. The moving arm is pivotally connected to the base, moves relatively to the base, and includes an operating end away from the base. The tube includes a channel that accommodates a fluid, and a suction port that is in communication with the channel and formed at the suction port. The negative pressure device, connected to the channel, generates a negative pressure upon the fluid in the channel to cause the suction port to form a suction force. The suction force acts on the wafer to be transported and causes the wafer to be transported to be kept at a distance from the operating end. Thus, without contacting the wafer, the wafer to be transported can be transported.

Abstract: Nanoreactors comprising a metal precursor in a carrier are provided as well as methods of initiating, methods of preparing, and methods of using nanoreactors. In some embodiments, upon exposure to heat, the metal precursor forms nanoparticles that can be detected, e.g., by detecting a color change in the nanoreactor and/or by detecting the number and/or size and/or size distribution and/or shape of the nanoparticles. The nanoreactors can be used, in some embodiments, as time-temperature indicators for perishable goods.

Abstract: A wafer packaging method includes the following steps. A wafer having a plurality of integrated circuit units is provided. A first surface of the wafer opposite to the integrated circuit units is ground. A release layer is formed on a second surface of a light transmissive carrier. An ultraviolet temporary bonding layer is formed on the second surface of the light transmissive carrier or a third surface of the wafer. The ultraviolet temporary bonding layer is used to adhere the second surface of the light transmissive carrier to the third surface of the wafer. The first surface of the wafer is adhered to an ultraviolet tape. A fourth surface of the light transmissive carrier is exposed to ultraviolet to eliminate adhesion force of the ultraviolet temporary bonding layer. The light transmissive carrier and the release layer are removed.

Abstract: A wafer packaging method includes the following steps. A wafer having a plurality of integrated circuit units is provided. A first surface of the wafer opposite to the integrated circuit units is ground. A release layer is formed on a second surface of a light transmissive carrier. An ultraviolet temporary bonding layer is formed on the second surface of the light transmissive carrier or a third surface of the wafer. The ultraviolet temporary bonding layer is used to adhere the second surface of the light transmissive carrier to the third surface of the wafer. The first surface of the wafer is adhered to an ultraviolet tape. A fourth surface of the light transmissive carrier is exposed to ultraviolet to eliminate adhesion force of the ultraviolet temporary bonding layer. The light transmissive carrier and the release layer are removed.

Abstract: An apparatus for substrate processing, mainly includes a processing unit and a fluid supply unit. The processing unit includes a platform for laying a substrate. The platform includes a plurality of injection holes defined thereon, the injection holes obliquely and downwardly extend from a top surface of the platform. The fluid supply unit includes a plurality of containers containing fluids for supplying to the processing unit and fluid-connected to the injection holes of the platform. The fluids from the fluid supply unit can be obliquely injected out from the injection holes and slightly floats and moves the substrate over the platform and reacts with the substrate.

Abstract: A housing is for an electronic device. The housing includes a main body made of thermoplastic, and a transparent layer formed on the main body. The transparent layer is made of transparent thermosetting plastic.

Abstract: A PWM comprises a voltage transformation module, a voltage-sensing module and a timer. The voltage transformation module is configured to transform an input voltage into an output voltage. The voltage-sensing module is coupled to the voltage transformation module and configured to detect a voltage of a first terminal, wherein the voltage of the first terminal is proportional to the output voltage. The timer is configured to measure the time duration for which the voltage of the first terminal is lower than a reference voltage, wherein the timer initiates a short circuit signal when the time duration is greater than a predetermined value.

Abstract: A PWM comprises a voltage transformation module, a voltage-sensing module and a timer. The voltage transformation module is configured to transform an input voltage into an output voltage. The voltage-sensing module is coupled to the voltage transformation module and configured to detect a voltage of a first terminal, wherein the voltage of the first terminal is proportional to the output voltage. The timer is configured to measure the time duration for which the voltage of the first terminal is lower than a reference voltage, wherein the timer initiates a short circuit signal when the time duration is greater than a predetermined value.

Abstract: A feedback signal sensing method includes the steps of: providing a pulse width modulation (PWM) signal having a period; charging a capacitor by a current source during a pulse duration of the period, so as to form an equivalent slope compensation ramp signal; conducting an inductor current flowing from a boost inductor to flow through an equivalent resistor during the pulse duration of the period, so as to form an equivalent inductor current signal; and using a coupling characteristic of the capacitor together with the equivalent slope compensation ramp signal and the equivalent inductor current signal to form a feedback signal.

Abstract: An apparatus for substrate processing, mainly includes a processing unit and a fluid supply unit. The processing unit includes a platform for laying a substrate. The platform includes a plurality of injection holes defined thereon, the injection holes obliquely and downwardly extend from a top surface of the platform. The fluid supply unit includes a plurality of containers containing fluids for supplying to the processing unit and fluid-connected to the injection holes of the platform. The fluids from the fluid supply unit can be obliquely injected out from the injection holes and slightly floats and moves the substrate over the platform and reacts with the substrate.

Abstract: A dimming method for light emitting diodes (LEDs), which is applied in a pulse width modulation boost circuit system, includes the following steps: (a) equally dividing a cycle into a plurality of intervals; (b) providing a plurality of control signals having the cycle and a pulse duration, wherein the pulse duration of each of the control signals is sequentially generated in the cycle; and (c) using the plurality of control signals to control a plurality of corresponding switches for dimming the LEDs connected to the switches.

Abstract: A feedback signal sensing method includes the steps of: providing a pulse width modulation (PWM) signal having a period; charging a capacitor by a current source during a pulse duration of the period, so as to form an equivalent slope compensation ramp signal; conducting an inductor current flowing from a boost inductor to flow through an equivalent resistor during the pulse duration of the period, so as to form an equivalent inductor current signal; and using a coupling characteristic of the capacitor together with the equivalent slope compensation ramp signal and the equivalent inductor current signal to form a feedback signal.

Abstract: A system and a method for manufacturing process is provided, in which the fluid used to process the processed component is also used to move the processed component through the steps during the process. The system includes a chemical supply unit, a processing platform, and a control unit. The chemical supply unit is a device for supplying a chemical fluid to react with the processed component, as well as clean water or air that may be required in the process. The processing platform receives the chemical fluid, water and air from the chemical supply unit and provides a processing environment to process the processed component. The processing platform is designed to work with the chemical supply unit so that the chemical fluid can be supplied to the processing platform to move and react with the processed component. The control unit is a programmable electronic device.

Abstract: A MOS circuit arrangement includes a silicon substrate, a semiconductor device, a field oxide layer, and a poly-protective layer. The silicon substrate has a conductive doping incorporated therein, wherein the semiconductor device is electrically connected with the silicon substrate. The field oxide layer is formed on the silicon substrate at a position spaced apart from the terminal of the semiconductor device to form an active region between the field oxide layer and the semiconductor device. The poly-protective layer deposited on the active region to communicate the field oxide layer with the terminal of the semiconductor device, wherein the poly-protective layer provides a junction breakdown path between the semiconductor device and the silicon substrate to increase a junction breakdown voltage of the semiconductor device.

Abstract: A chemical etching process and apparatus includes a control unit, an etching unit, an etchant supply unit and an air supply unit. The control unit has a programmable electronic device through which various process parameters are input to control the operations of the etching unit, the etchant supply unit and the air supply unit. The etching unit has an etching table incorporated with the etchant supply unit and the air supply unit for providing a proper etching environment for a working object to be etched. The etchant supply unit is equipped with flow control valves and electromagnetic valves respectively for controlling the flow rate and the on/off operation of etchant supply through the control unit. Also, the air supply unit is equipped with flow control valves and electromagnetic valves respectively for controlling the flow rate and the on/off operation of air supply through the control unit.