Abstract: In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active channel layer is provided for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and minimize unwanted power dissipation in the backplane circuit. Another embodiment of the invention provides a high electron mobility thin film transistor structure with a plurality of metal oxynitride active channel layers and a gate insulating layer for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and to minimize unwanted power dissipation in the backplane circuit.

Abstract: One object of this invention is to provide a structure of integrated power transistor device having low thermal budget metal oxynitrides as the active channel on a CMOS logic and control circuit chip to form an integrated intelligent power switching module for power switching. The other object of this invention is to provide a structure of integrated power amplifier transistor device having low thermal budget metal oxynitride active channel layer on a CMOS logic and control circuit chip to form an integrated intelligent microwave power amplifier for RF power amplification.

Abstract: Metal oxynitride diodes having at least a first metal oxynitride layer of a first conduction type and a second metal oxynitride layer of a second conduction type are provided. The first oxynitride layer is selectively doped or un-intentionally doped and have high carrier mobility. The second oxynitride layer is also selectively doped or un-intentionally doped and have high carrier mobility. A compensated oxynitride drift layer having a low carrier density may be adopted to increase the breakdown voltage of the device.

Abstract: One object of this invention is to provide a structure of integrated power transistor device having low thermal budget metal oxynitrides as the active channel on a CMOS logic and control circuit chip to form an integrated intelligent power switching module for power switching. The other object of this invention is to provide a structure of integrated power amplifier transistor device having low thermal budget metal oxynitride active channel layer on a CMOS logic and control circuit chip to form an integrated intelligent microwave power amplifier for RF power amplification.

Abstract: This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices.

Abstract: MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

Abstract: High mobility transistors and microwave integrated circuits with an improved uniformity of the width of the smallest of features, an increased lithographic yield and reduced defects in the active components are provided. Before and during fabrication, a first grooving process is performed to partially or completely remove composite epitaxial layers in the field lanes to reduce the initial bow to be smaller than DOF range and to improve the uniformity of the critical dimension. A second grooving process may also be performed to remove composite epitaxial layers in the dicing lanes to further improve the uniformity of the width of the smallest features for the devices and circuits to be made.

Abstract: An electron definable glass or an electron sensitive glass for microstructures is provided with microstructures and optical waveguides formed therein. The microstructures are formed by electron beam irradiation in selected areas in the electron definable glass followed by a high temperature heat treatment and chemical etching, whereas the optical waveguides are formed by irradiating the electron definable glass by an electron beam followed by a low temperature heat treatment.

Abstract: The present invention is related to high electron mobility transistors for power switching and microwave amplification and switching. More specifically, it related to a high electron mobility transistor with an improved gate to enhance the performance. When fabricating a high electron mobility thin film transistors, a first gate metal layer made of chromium alloy or tungsten alloy is deposited to reduce surface traps and to enhance the stability and integrity of the gates.

Abstract: In HEMTs based on III-nitrides epitaxial films or GaAs, AlGaAs and InGaAs epitaxial films, unwanted microcracks are often formed in the composite epitaxial layers in the channel region during fabrication and operation. These microcracks are caused by strain or stresses due to lattice mismatch and thermal expansion coefficient differences between materials and substrate's. Those microcracks will bring about an increase in source to drain resistance and lead to performance and reliability degradation of the HEMTs and the MMICs containing them. The present invention provides HEMTs with minimized effects of the unwanted microcracks by aligning the channel region long axis to a certain direction so that the channel region long axis forms a right angle with axis of at least one type of the microcracks.

Abstract: In HEMTs based on III-nitrides epitaxial films or GaAs, AlGaAs and InGaAs epitaxial films, unwanted microcracks are often formed in the composite epitaxial layers in the channel region during fabrication and operation. These microcracks are caused by strain or stresses due to lattice mismatch and thermal expansion coefficient differences between materials and substrate's. Those microcracks will bring about an increase in source to drain resistance and lead to performance and reliability degradation of the HEMTs and the MMICs containing them. The present invention provides HEMTs with minimized effects of the unwanted microcracks by aligning the channel region long axis to a certain direction so that the channel region long axis forms a right angle with axis of at least one type of the microcracks.

Abstract: MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

Abstract: This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices.

Abstract: This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices.

Abstract: A reflector assembly implementable in a scanning antenna assembly having a stationary surface includes a support assembly coupled to the stationary surface, a substantially planar first reflector panel coupled to the support assembly so as to enable rotation of the first reflector panel about a central axis of the first reflector panel, and an actuator assembly comprising a translating arm coupled to the first reflector panel, wherein translational motion of the arm is operable to rotate the first reflector panel about the central axis back and forth through a predetermined angular range at a predetermined frequency.

Abstract: A obstacle detection system comprises a transmission antenna operable to radiate a radio frequency (RF) signal and a transmitter operable to control transmission of the RF signal from the antenna. The obstacle detection system also comprises a receiver antenna operable to receive a reflection of the RF signal; and processing circuitry operable to analyze a plurality of characteristics of a radar cross section (RCS) of the received reflection to identify an obstacle and one or more physical attributes of the obstacle.

Abstract: In high frequency circuits, the switching speed of devices is often limited by the series resistance and capacitance across the input terminals. To reduce the resistance and capacitance, the cross-section of input electrodes is made into a T-shape or inverted L-shape through lithography. The prior art method for the formation of cavities for T-gate or inverted L-gate is achieved through several steps using multiple photomasks. Often, two or even three different photoresists with different sensitivity are required. In one embodiment of the present invention, an optical lithography method for the formation of T-gate or inverted L-gate structures using only one photomask is disclosed. In another embodiment, the structure for the T-gate or inverted L-gate is formed using the same type of photoresist material.

Abstract: In high frequency circuits, the switching speed of devices is often limited by the series resistance and capacitance across the input terminals. To reduce the resistance and capacitance, the cross-section of input electrodes is made into a T-shape or inverted L-shape through lithography. The prior art method for the formation of cavities for T-gate or inverted L-gate is achieved through several steps using multiple photomasks. Often, two or even three different photoresists with different sensitivity are required. In one embodiment of the present invention, an optical lithography method for the formation of T-gate or inverted L-gate structures using only one photomask is disclosed. In another embodiment, the structure for the T-gate or inverted L-gate is formed using the same type of photoresist material.

Abstract: The prior art method for the formation of T-gate or inverted L-gate is achieved through several lift-off processes and requires at least two different photoresists and hence two different developers. In one embodiment of the present invention, an etching method for the formation of the source, the drain and the T-gate or inverted L-gate of a compound semiconductor HEMT device is disclosed. In such a method, only one type of photoresist and developer are needed. In one other embodiment, a fabrication process for a HEMT device is disclosed to have the stem of the T-gate or the inverted L-gate defined by a dielectric cavity and its mechanical strength enhanced by a dielectric layer. In another embodiment, a fabrication process for a HEMT device is disclosed to have the stems of the source and the drain defined by dielectric cavities and their mechanical strength enhanced by a dielectric layer.

Abstract: Thin film transistors and circuits having improved mobility and stability are disclosed in this invention to have metal oxynitrides as the active channel layers. In one embodiment, the charge carrier mobility in the thin film transistors is increased by using the metal oxynitrides as the active channel layers. In another embodiment, a thin film transistor having a p-type metal oxynitride active channel layer and a thin film transistor having an n-type metal oxynitride active channel layer are fabricated to forming a CMOS circuit. In yet another embodiment, thin film transistor circuits having metal oxynitrides as the active channel layers are provided.