Abstract: An electrocaloric heat dissipation device is formed by inserting metal layer-pyroelectric layer-metal layer (MPM) structures between the metallization layers in a metal interconnect. Electric fields are alternately applied and relaxed to induce temperatures of the pyroelectric layers to cycle and drive heat transfer. The heat dissipation device may be placed adjacent a hot spot in a power management integrated circuit (PMIC) and is particularly useful when the PMIC is in a 3D package. In some embodiments, the MPM structures are inserted around circuit wiring. Interconnects for the heat dissipation device may replace dummy metal wiring.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes one or more interconnect wires and vias arranged within one or more interconnect dielectric layers over a substrate. Further, a bottom electrode is disposed over the one or more interconnect wires and vias and comprises a first material having a first work function. A top electrode is disposed over the bottom electrode and comprises a second material having a second work function. The first material is different than the second material, and the first work function is different than the second work function. An anti-ferroelectric layer is disposed between the top and bottom electrodes.

Abstract: The present disclosure relates to an integrated chip including a first metal layer over a substrate. A second metal layer is over the first metal layer. An ionic crystal layer is between the first metal layer and the second metal layer. A metal oxide layer is between the first metal layer and the second metal layer. The first metal layer, the second metal layer, the ionic crystal layer, and the metal oxide layer are over a transistor device that is arranged along the substrate.