Abstract: A flip chip backside Vertical Cavity Surface Emitting Laser (VCSEL) package has a VCSEL pillar array. A first metal contact is formed over a top section of each pillar of the VCSEL pillar array. A second metal contact is formed on a back surface of the VCEL pillar array. An opening is formed in the second metal contact and aligned with the pillars of the VCSEL pillar array. Solder tip is applied on each pillar of the VCSEL pillar array to flip chip mount the VCSEL pillar array.

Abstract: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

Abstract: Methods and apparatuses for generating feedback to a human practitioner practicing a skill using a combination of local platform, the internet, and cloud-based analysis engine are disclosed. The local platform is employed to provide physical parameter data pertaining to the human practitioner (or part/parts thereof) and to the object involved in practicing the skill. Cloud-based technology is leveraged to provide analysis to physical parameter data acquired by the local platform and to generate feedback to the human practitioner. Cloud-based technology is also leveraged to provide analysis resources to the cloud-based analysis engine and feedback resources to provide/enhance the feedback to the human practitioner.

Abstract: Methods and apparatuses for generating feedback to a human practitioner practicing a skill using a combination of local platform, the internet, and cloud-based analysis engine are disclosed. The local platform is employed to provide physical parameter data pertaining to the human practitioner (or part/parts thereof) and to the object involved in practicing the skill. Cloud-based technology is leveraged to provide analysis to physical parameter data acquired by the local platform and to generate feedback to the human practitioner. Cloud-based technology is also leveraged to provide analysis resources to the cloud-based analysis engine and feedback resources to provide/enhance the feedback to the human practitioner.

Abstract: An antenna module embeds front end circuitry with an antenna. Adaptive matching circuitry external to the antenna module is electrically connected between the embedded front end circuitry and the embedded antenna.

Abstract: A golf analysis system includes a light emitter assembly, including first and second light emitters spaced apart from one another, and a light detector assembly, including first and second sets of light detectors arranged along a surface of a practice area beneath the light emitters. The light emitters emit first and second spreads of non-parallel light rays, received by the light detectors, to form an optical sensor net for capturing relational kinetic information when at least one of a golf ball and a golf club passing through the optical sensor net. The region between the level of the light detectors and the level of the light emitters is substantially free of mechanical structure.

Abstract: An antenna module embeds front end circuitry with an antenna. Adaptive matching circuitry external to the antenna module is electrically connected between the embedded front end circuitry and the embedded antenna.

Abstract: Methods and apparatus that provide TO-can optoelectronic packages suitable for optical telecommunications applications involving data speed rates of up to 10 Gbps and beyond. A TO-can optoelectronic package may comprise a TO-can cap and a TO-can header defining an interior region of the package. An optoelectronic component such as a laser or photodetector can be mounted within the interior region of the TO-can. An electrical connection may be selected for coupling the optoelectronic component to a selected post of the TO-can package. The electrical connection may include a transmission line formed from a conductive element other than a bond wire having a predefined length that can assist in reducing parasitic effects within the TO-can optoelectronic package to accommodate high-speed data rates. The transmission line itself is connected to the optoelectronic component and the selected post with a plurality of bond wires.

Abstract: Various methods and apparatuses extend the useful operation speed of TO-can optoelectronic packages up to speeds of 10 Gbps and beyond.

Abstract: A video image acquisition apparatus is disclosed. The apparatus has one or multiple digital cameras taking images of a flying golf ball created by at least two flashes or strobes of light on continuous video mode at a predetermined frame rate. Each image frame is then subtracted from the background and compared to determine the existence of the ball image in flight thus eliminating a dependency upon the camera shutter speed which must be synchronized with the flashes in prior art design. Furthermore, another video image acquisition apparatus is also disclosed that consists of at least two video cameras taking images of flying golf balls created by at least two flashes or strobes of light at predetermined time intervals. The apparatus then applies triangulate calculation of the two camera images to determine the exact physical locations of the flying golf balls in space at a given time of flight.

Abstract: Various methods and apparatuses extend the useful operation speed of TO-can optoelectronic packages up to speeds of 10 Gbps and beyond.

Abstract: An optical sensor net system for measuring the relational dynamic information of a spheroidal projectile. A support frame for the system may include light emitters that generate divergent non-parallel rays of light. The non-parallel rays of light emitted may be directed to and received by a plurality of light detectors substantially arranged within a single plane. The intersecting non-parallel rays of light may form an asymmetrical optical sensor net that may also capture both golf ball and golf club information as they pass through. The light detectors that receive the rays of light may be spaced apart at preselected locations and distances less than the diameter of a spheroidal object such as a golf ball.

Abstract: The present invention relates to a golf training device capable of forming a two-dimensional, single planar and total symmetrical optical sensor net for detecting movement of a golf ball. The device comprises a square frame which has a signal producing means holding part on the first horizontal and the first vertical sides of the frame and a signal detecting means holding part on the second horizontal and the second vertical sides of the frame. On the signal producing means holding part, a light signal producing means including a light signal emitting means is installed to generate a two-dimensional, single planar optical path net. A light signal detecting means is spatially arranged in the opposite sides of the frame in accordance with the light emitting means to form a totally symmetrical optical sensor net for detecting the light signals from the light signal producing means.

Abstract: To screen or test the electrical properties of HEMT-like wafers for their quality, the critical layer qualities of a wafer (16) are evaluated by measuring its conductivity (sigma or s) and mobility (mu or m) at upper and lower temperatures, which need only be sufficiently different as to remove uncertainties in the test data but, in practice, are room and liquid nitrogen temperatures. Novel equations show (1) that the crucial quality or merit factor (n.sub.s) the electron sheet density of two-dimensional electron gas (2DEG), can be determined by measuring the total layer conductivity (sigma or s) at the lower or liquid nitrogen temperature and mobility (mu or m) at the upper or room temperature and (2) by measuring overall layer effective mobility (mu or m) at both room and liquid nitrogen (the upper and lower) temperatures to provide a means to measure the value of the 2DEG density, n.sub.s which has better accuracy then where the temperature of mobility is only made at room temperature.

Abstract: A high-electron mobility transistor or HEMT has a top surface layer between its gate and drain arranged to produce a channel to drain conductance that is close to the ungated channel conductance to lower the output conductance and reduce gate leakage and gate capacitance. The transistor has a high band-gap active layer to produce a 2DEG channel in an adjacent layer, and source, gate and drain electrodes on the active layer. An undoped or lightly doped surface layer in the region between the gate and the drain produces a low conductance for a region of a few hundred .ANG. from the drain-side edge of the gate. This spreads the electric field domain over at least this few hundred .ANG. distance.

Abstract: A method for forming an epitaxial region on a semiconductor wafer substrate of III-V compound composition. After deposition of a dielectric mask, a seed layer that includes indium is evaporated over the wafer. A layer of III-V material is then deposited over the surface of the wafer by MBE growth. The seed layer acts to create uniformly distributed nucleation cites that are randomly spaced over the surface of the dielectric material and causes a reduction of the surface mobility of the atoms during the epitaxial growth process so that the residual polycrystalline material form atop the dielectric mark exhibits enhance surface morphology. As a result, the direct placement of interconnects on the polycrystalline material is achieve and the costly and time-consuming step of removing both the polycrystalline material and the dielectric mask of the prior art is avoided.

Abstract: A field effect transistor (FET) structure suitable for use at microwave frequencies is fabricated on a planar surface of a semi-insulating single crystal GaAs substrate which has been cut and polished to present the (110) surface. This orientation is selected because of its non-polar and other unique surface and interface properties. The (110) crystal axis is tilted from the normal of the planar surface in the direction to expose more of the (111) Ga face about 5.degree. to facilitate molecular beam epitaxial (MBE) growth of smooth, defect-free thin films. An elongate gate electrode is formed along the bottom of an anisotropically etched trench having a pair of longitudinal sidewalls, one vertical and the other tilted outwardly. The trench is selectively oriented on the substrate to facilitate such anisotropic etching.