Abstract: A multilevel memory core includes a word line and a bit line. The multilevel memory core also includes a core cell in electrical communication with the word line and the bit line. The core cell includes a threshold changing material. The threshold changing material is programmed to define multiple levels for storage where each of the multiple levels for storage is associated with a corresponding threshold voltage. Methods for reading the multilevel memory core also are described.

Abstract: A driving circuit and a flat panel display using thereof are disclosed. The driving circuit includes a gamma voltage generator, a plurality of first buffers and a converter. The gamma voltage generator is used for providing a plurality of first gamma voltages. Each of the first buffers is provided for receiving each of the first gamma voltages to generate a second gamma voltage respectively. The converter is provided for receiving the second gamma voltages and the first display data to output the image driving signal by selecting one of the corresponding second gamma voltages according to the first display data.

Abstract: A digital power meter apparatus and the method for the same are proposed. The input voltage signal and input current signal through dual channels are processed at a first stage to obtained a first digital signal. The first digital signal is sent to a third low-pass filter. The input voltage signal and input current signal are processed in a second-stage processing through a first low-pass filter, a second low-pass filter and a second logic operation unit to obtain a second digital signal. A third logic operation unit processes the first digital signal and a second digital signal in order to obtain a digital power signal proportion to the product of the two input signals.

Abstract: A memory cell comprises a chalcogenide random access memory (CRAM) cell and a CMOS circuit. The CMOS circuit accesses the CRAM cell. The CRAM cell has a cross-sectional area that is determined by a thin film process (e.g., a chalcogenide deposition thin film process) and by an iso-etching process. If desired, the chalcogenide structure may be implemented in series with a semiconductor device such as a diode or a selecting transistor. The diode drives a current through the chalcogenide structure. The selecting transistor drives a current through the chalcogenide structure when enabled by a voltage at a gate terminal of the selecting transistor. The selecting transistor has a gate terminal, a source terminal, and a drain terminal; the gate terminal may be operatively coupled to a word line of a memory array, the source terminal may be operatively coupled to a drive line of the memory array, and the drain terminal may be operatively coupled to a bit line of the memory array.

Abstract: A memory cell comprises a chalcogenide random access memory (CRAM) cell and a CMOS circuit. The CMOS circuit accesses the CRAM cell. The CRAM cell has a cross-sectional area that is determined by a thin film process (e.g., a chalcogenide deposition thin film process) and by an iso-etching process. If desired, the chalcogenide structure may be implemented in series with a semiconductor device such as a diode or a selecting transistor. The diode drives a current through the chalcogenide structure. The selecting transistor drives a current through the chalcogenide structure when enabled by a voltage at a gate terminal of the selecting transistor. The selecting transistor has a gate terminal, a source terminal, and a drain terminal; the gate terminal may be operatively coupled to a word line of a memory array, the source terminal may be operatively coupled to a drive line of the memory array, and the drain terminal may be operatively coupled to a bit line of the memory array.

Abstract: A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch semiconductor processing steps. The resulting memory element can be driven by a CMOS steering element.

Abstract: A control device for a water source filtering system includes a water filtering system made up of a first cartridge of sediment pre-filter, a second cartridge of activated carbon filter to remove toxic chemicals, a third cartridge of refined pre-filter, a fourth cartridge of multi-layer reverse osmosis membrane, and a fifth cartridge of activated carbon post filter for sequential filtration of water source wherein the water filtering system works in cooperation with a control device quipped with a control panel having a series of indicator lights sequentially arranged at one side thereon to be respectively matched with the first-through-fifth cartridges thereby. The control panel thereof also has a display screen disposed at the upper section of the other side thereof, a pair of good and poor water quality indicator lights disposed at the middle section of the other side thereof, and a pair of setting and resetting/increasing keys disposed at the lower section of the other side thereof.

Abstract: Embodiments of the invention generally provide methods and compositions for producing recombinant transglutaminases. The purified recombinant transglutaminases of the invention are reactive to a broad range of compounds and exhibit broad substrate activity. In one embodiment, Streptoverticillium mobaraense (ATCC 29032), and Streptoverticillium cinnamoneum (ATCC 11874) recombinant transglutaminase fusion proteins purified from E. coli are provided to a better yield, higher purity, and activity than hitherto possible by recombinant DNA technology.

Abstract: An umbrella handle includes a handle shell, an inner sleeve, two positioning taps, a fastening element and two lids. The hollow handle shell is made of soft plastic material with the inner sleeve located therein. The inner sleeve has a longitudinally bore and a cavity formed on each end. Each positioning tap is formed a smaller through hole to connect a larger threaded hole to be received in the cavity and securely fitted in the bore. The fastening element is for connecting the two positioning taps through the two corresponding through hole. Each lid is covered on two end of the hollow handle, respectively. A silica material is filled between the hollow handle and the inner sleeve to provide more comfortably holding the umbrella handle.

Abstract: A process for fabricating phase-change elements having ultra small cross-sectional areas for use in phase change memory cells specifically and in semiconductor devices generally in which pads are implemented to create horizontally aligned phase change elements is disclosed. The elements thus defined may be used within chalcogenide memory cells or other semiconductor devices.

Abstract: A golf-sunshade, the main structure of the golf-sunshade comprises a middle-stick, an upper nest member, an under nest member, a fixture and a rib; wherein the top end of the middle-stick connects to the fixture, a flex member is disposed on the fixture, the upper nest member is fixed on the end of a soft pipe, the under nest member is disposed around the outer surface of the middle-stick and is able to slide up/down along the middle-stick and the soft pipe. A main rib and a branch rib of the forefront sector of the rib respectively connects to the upper nest member and the under nest member for effecting opening/closing of the sunshade; the user put the surface of the sunshade at any angle through the flex member disposed on the end of the middle-stick, and the user can take out a golf club etc. from the bag under the sunshade without closing the sunshade.

Abstract: A non-volatile memory cell is provided. The non-volatile memory cell includes of a threshold switch material thin film and a memory switch material thin film, and the phases of the memory switch material layer is capable of changing. In addition, the memory switch material layer serves as a memory unit; the threshold switch material serves as a steering unit. Furthermore, the steering unit will breakdown when a voltage larger than its threshold voltage is provided, and the phase restores to the original state when the voltage is off.

Abstract: A method of forming a memory cell comprises forming a stack comprising a first electrode, an insulating layer over the first electrode, and a second electrode over the insulating layer, with a side wall on the stack. A side wall spacer comprising a programmable resistive material in electrical communication with the first and second electrodes is formed. The side wall spacer is formed by depositing a layer of programmable resistive material over the side wall of the stack, anisotropically etching the layer of programmable resistive material to remove it in areas away from the side wall, and selectively etching the programmable resistive material according to a pattern to define the width of the side wall spacer. In embodiments described herein, the width is about 40 nanometers or less.

Abstract: A digital power meter apparatus and the method for the same are proposed. The input voltage signal and input current signal through dual channels are processed at a first stage to obtained a first digital signal. The first digital signal is sent to a third low-pass filter. The input voltage signal and input current signal are processed in a second-stage processing through a first low-pass filter, a second low-pass filter and a second logic operation unit to obtain a second digital signal. A third logic operation unit processes the first digital signal and a second digital signal in order to obtain a digital power signal proportion to the product of the two input signals.

Abstract: A process for fabricating phase-change elements having ultra small cross-sectional areas for use in phase change memory cells specifically and in semiconductor devices generally in which pads are implemented to create horizontally aligned phase change elements is disclosed. The elements thus defined may be used within chalcogenide memory cells or other semiconductor devices.

Abstract: A pliable handle for a hand-held device is provided. The handle includes a tubular core member, a deformable outer sheath disposed about the tubular core member, a gel disposed between the tubular core member and the outer sheath, and first and second sealers inserted into respective ends of the tubular core member and sealing the gel between the tubular core member and the outer sheath, wherein a force applied to the outer sheath causes load movement of the gel.

Abstract: A method of manufacturing a printhead for raising its product acceptance rate and improving its quality is provided. The method of manufacturing printheads includes steps of providing a base layer, forming a pattern layer on the base layer by a semi-conductor manufacturing process, forming a dry film of a channel barrier layer having an ink channel, a flow channel and plural ink cavities on the pattern layer; and adhering a nozzle plate on the dry film of the channel barrier layer by thermal compression. The pattern layer further includes a flow pattern and a base pattern surround a central location reserved for the ink channel, wherein the base pattern comprises at least a heating layer and a passivation layer, and the flow pattern is made of the same material and at the same height as the base pattern.

Abstract: A source driver, a source driver array, and a driver circuit with the source driver array and a display with the driver are provided in the invention. These devices are improved by receiving a position code signal through a start pulse generating circuit, which also accordingly generate a start pulse. The invention can improve the problem that the highest operation frequency of a flat panel display being restricted by the start pulse and further improve the cost of the conventional display for increasing the operation frequency.

Abstract: The invention is a frequency switching method of a CPU in electronic devices. The electronic device is comprised of a display screen and the CPU. The screen display changes according to the pixel clock. The method lowers the frequency of the pixel clock, switching the CPU frequency, and then restores the frequency of the pixel clock.

Abstract: A source driver is provided. The source driver receives a clock signal, a display data, and a control signal to drive a display panel. The source driver comprises: a receiver for receiving the clock signal, the display data, and the control signal; and a transmitter, coupled to the receiver, for enhancing a driving ability of the clock signal, the display data, and the control signal and outputting the enhanced clock signal, the enhanced display data, and the enhanced control signal for use of another source driver in a next stage.