Abstract: Embodiments provide a dielectric inter block disposed in a metallic region of a conductive line or source/drain contact. A first and second conductive structure over the metallic region may extend into the metallic region on either side of the inter block. The inter block can prevent etchant or cleaning solution from contacting an interface between the first conductive structure and the metallic region.

Abstract: Improved conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.

Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.

Abstract: Various solutions for low-power wake-up signal (LP-WUS) design with respect to user equipment and network node in mobile communications are described. An apparatus may receive a LP-WUS configuration from a network node. The apparatus may receive a LP-WUS based on the LP-WUS configuration from the network node. The apparatus may determine whether to wake up according to the LP-WUS. The LP-WUS with N subcarriers (SCs) is generated through a transformation of M-bit on-off keying (OOK) in a time domain. The transformation is a discrete Fourier transform (DFT) or least square operation. K samples are generated from the M bits with a signal modification or a signal truncation. The LP-WUS is generated through an inverse fast Fourier transform (IFFT) operation. The K is a size of the IFFT operation of cyclic-prefix orthogonal frequency-division multiple access (CP-OFDMA). The N is less than or equal to the K.

Abstract: A microfluidic detection unit comprises at least one fluid injection section, a fluid storage section and a detection section. Each fluid injection section defines a fluid outlet; the fluid storage section is in gas communication with the atmosphere and defines a fluid inlet; the detection section defines a first end in communication with the fluid outlet and a second end in communication with the fluid inlet. A height difference is defined between the fluid outlet and the fluid inlet along the direction of gravity. When a first fluid is injected from the at least one fluid injection section, the first fluid is driven by gravity to pass through the detection section and accumulate to form a droplet at the fluid inlet, such that a state of fluid pressure equilibrium of the first fluid is established.

Abstract: A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.

Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: A display apparatus includes a first touch sensing layer, a second touch sensing layer, a reflective display panel, and multiple light sources. The second touch sensing layer is disposed between the first touch sensing layer and the reflective display panel. The light sources are disposed on a surface of the first touch sensing layer facing the second touch sensing layer. The lights emitted by the light sources enter the second touch sensing layer, and then are transmitted to the reflective display panel.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. A first width direction of the first conductive contact structure is substantially parallel to a second width direction of the first conductive via structure.

Abstract: A display apparatus includes a first touch sensing layer, a second touch sensing layer, a reflective display panel, and multiple light sources. The second touch sensing layer is disposed between the first touch sensing layer and the reflective display panel. The light sources are disposed on a surface of the first touch sensing layer facing the second touch sensing layer. The lights emitted by the light sources enter the second touch sensing layer, and then are transmitted to the reflective display panel.

Abstract: A semiconductor device package includes a substrate, a redistribution structure, a conductive pad, a conductive element, and a conductive via. The redistribution structure is disposed over the substrate and includes a first dielectric layer and a first conductive layer. The conductive pad is disposed on a first surface of the first dielectric layer. The conductive element is disposed in the first dielectric layer and is electrically connected to the conductive pad. The conductive via extends from the conductive pad toward the substrate through the conductive element and the first dielectric layer. The first conductive layer is separated from the conductive via.

Abstract: A semiconductor device package includes a substrate, a redistribution structure, a conductive pad, a conductive element, and a conductive via. The redistribution structure is disposed over the substrate and includes a first dielectric layer and a first conductive layer. The conductive pad is disposed on a first surface of the first dielectric layer. The conductive element is disposed in the first dielectric layer and is electrically connected to the conductive pad. The conductive via extends from the conductive pad toward the substrate through the conductive element and the first dielectric layer. The first conductive layer is separated from the conductive via.

Abstract: The invention provides a touch display apparatus including a first polarizer, a display panel disposed on the first polarizer, a gap disposed on the display panel, and a second polarizer disposed on the gap. The touch display apparatus further includes a cover lens disposed on the outermost surface of the touch display apparatus with respect to the first polarizer. The invention also provides an electric apparatus including the above-mentioned touch display apparatus. The invention can preferably solve the problem of the poor visibility of the air bonding touch display apparatus in the prior art.

Abstract: A semiconductor structure and its manufacturing method including multiple steps are provided. First, a patterned circuit board having a substrate and a patterned circuit layer is provided. The substrate includes a first surface, a second surface, at least one connecting channel, and at least one conductive through hole, wherein patterned circuit layer is disposed on the first surface, a second surface, and the inside wall of the conductive through hole. Then, the patterned circuit board is disposed on a carrier, and the patterned circuit layer disposed on one of the first surface and the second surface is touched with the carrier. Then, a filling process is applied. A filling material flows to the conductive through hole via the first surface or the second surface from the connecting channel. Then, a package material is provided to produce a semiconductor structure.

Abstract: LED packaging construction includes a substrate, a cavernous construction, a LED, and a reflection layer. The substrate is daubed with an insulation layer and a circuit layer on a surface on the substrate, wherein the substrate is made of metal, and the insulation layer is disposed between the circuit layer and the substrate. The cavernous construction is disposed on the substrate and surrounds the LED, and is formed by disposing a photoresist layer and patterning the photoresist layer. The circuit layer electrically connects the LED through a conducting wire. The reflection layer is at least disposed on a first surface of the cavernous construction, wherein the first surface surrounds the LED and faces toward the LED, and a part of light emitted from the LED is reflected by the reflection layer.

Abstract: A touch panel, having a transparent region and a decoration region disposed on at least one side of the transparent region, includes a first substrate, a first decoration layer, a touch sensing unit, a first conductive line and a first opaque reflection layer. The first decoration layer is disposed on the first substrate and the first decoration layer is disposed in the decoration region. The touch sensing unit is at least disposed in the transparent region. The first conductive line is disposed in the decoration region and electrically connected to the touch sensing unit. The first opaque reflection is disposed on the first decoration layer and the first opaque reflection is disposed in the decoration region. The first decoration layer is disposed between the first substrate and the first opaque reflection layer.

Abstract: A touch panel including a substrate, first sensing series and optical matching stacked structures is provided. Each first sensing series includes first sensing pads and bridge structures, and two adjacent first sensing pads are connected along the first direction through one of the bridge structure. Each optical matching stacked structure includes a first optical matching pattern and a second optical matching pattern disposed between the first optical matching pattern and the bridge structure, and the optical matching stacked structures are disposed on a surface of the bridge structures that faces to a user so as to reduce a reflectivity of light along a direction of view in areas where the bridge structures are located.

Abstract: A touch panel has a touch control region and a peripheral region disposed adjacent to at least one side of the touch control region. The touch panel includes a substrate, a first index matching layer, a decoration layer, and a touch element. The first index matching layer covers a surface of the substrate. The first index matching layer has a first refractive index greater than that of the substrate. The decoration layer is disposed in the peripheral region. The touch element is disposed on the first index matching layer and at least in the touch control region.

Abstract: A touch panel including a substrate, a plurality of first electrode series and a plurality of second electrode series is provided. The first electrode series are disposed on the substrate. Each of the first electrode series extends along a first direction and includes a plurality of first electrode pads and a plurality of bridge structures. Two adjacent first electrode pads are connected along the first direction through one of the bridge structures, where each of the bridge structures includes a conductive pattern and an optical matching pattern disposed on a surface of the conductive pattern that faces to a user so as to reduce a reflectivity of light along a viewing direction in areas where the bridge structures are disposed.