Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.

Abstract: A semiconductor structure includes a semiconductor substrate, a gate stack disposed over the semiconductor substrate, a first oxide spacer disposed along a sidewall of the gate stack, a protection portion disposed over the first oxide spacer, and an interlayer dielectric layer disposed over the semiconductor substrate. The first oxide spacer and the protection portion are disposed between the gate stack and the interlayer dielectric layer.

Abstract: A photographing control method includes receiving a photographing parameter for a trajectory point from a control terminal, obtaining mobile-platform attitude data for the trajectory point, establishing a correspondence relationship between the photographing parameter for the trajectory point and the mobile-platform attitude data for the trajectory point, and, in response to detecting that a current operation attitude of a mobile platform matches the mobile-platform attitude data for the trajectory point, controlling a photographing device of the mobile platform to perform photographing according to the photographing parameter.

Abstract: A semiconductor device and a manufacturing method of the same are provided. The method includes forming a plurality of first conductive structures and a first dielectric layer between the first conductive structures on a substrate. The method also includes forming a trench between the first dielectric layer and the first conductive structures. The method further includes forming a liner material on a sidewall and a bottom of the trench. In addition, the method includes forming a conductive plug on the liner material in the trench. The method also includes removing the liner material to form an air gap, and the air gap is located between the conductive plug and the first dielectric layer.

Abstract: An antenna device includes a first antenna group comprising multiple antennas, configured to receive and transmitting signals; a second antenna group comprising multiple antennas, configured to receive and transmitting signals; a processor coupled to the first antenna group by a first electronic switch, coupled to the second antenna group by a second electronic switch, configured to divide radiation pattern of antenna combination of the first antenna group and the second antenna group into a predetermined number of characteristic patterns, and further configured to calculate similarities of the characteristic patterns and the RSSI of each characteristic pattern; wherein when the antenna device is in operation, the processor reads and analyzes RSSI of the signals, and compares with the RSSI of the characteristic patterns, and then determines the matched characteristic pattern group according to results of the comparisons and the similarities of the characteristic patterns.

Abstract: The present invention relates to a method for size estimation by image recognition of a specific target using a given scale. First, a reference objected is recognized in an image and the corresponding scale is established. Then the specific target is searched and the size of the specific target is estimated according to the acquired scale.

Abstract: The present invention provides a package structure. The package structure includes a substrate, an electronic component layer disposed on the substrate, and an organic polymer layer disposed on the electronic component layer, wherein the organic polymer layer has a fluorine content greater than 55 percent by weight and less than or equal to 85 percent by weight. The present invention further provides another package structure. The package structure includes a substrate, an electronic component layer disposed on the substrate, an organic polymer layer disposed on the electronic component layer, an optical function layer disposed on the organic polymer layer, and an adhesive layer disposed between the organic polymer layer and the optical function layer and configured to adhere the optical function layer to the organic polymer layer.

Abstract: A high-voltage circuitry device is provided. The high-voltage circuitry device includes a high-voltage transistor, a protection component and a feedback component. The high-voltage transistor has a gate, a drain and a source. The protection component is coupled between the source of the high-voltage transistor and the ground. When a current corresponding to an electrostatic discharge (ESD) event flows through the drain of the high-voltage transistor, the current flows from the drain of the high-voltage transistor to the ground through the high-voltage transistor and the protection component. The feedback component is coupled between the protection component, the ground and the gate of the high-voltage transistor. When the ESD event occurs, the feedback component enables the high-voltage transistor to stay on a turned-on state to pass the current.

Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.

Abstract: A semiconductor structure includes a semiconductor substrate, a gate stack disposed over the semiconductor substrate, a first oxide spacer disposed along a sidewall of the gate stack, a protection portion disposed over the first oxide spacer, and an interlayer dielectric layer disposed over the semiconductor substrate. The first oxide spacer and the protection portion are disposed between the gate stack and the interlayer dielectric layer.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a dielectric layer disposed on the substrate, bit lines disposed on the dielectric layer, spacers and a contact. The substrate has active areas arranged in parallel with each other. The bit lines are arranged in parallel with each other. Each bit line is partially overlapped with the corresponding active area. Each bit line has first portions and second portions arranged alternately in an extending direction thereof, and a width of the first portions is smaller than that of the second portions. The spacers are disposed on the sidewalls of each bit line. The contact is disposed between the adjacent bit lines and adjacent to the corresponding first portion of at least one of the adjacent bit lines, penetrates through the dielectric layer, and is in contact with the corresponding active area.

Abstract: A semiconductor device and a manufacturing method of the same are provided. The method includes forming a plurality of first conductive structures and a first dielectric layer between the first conductive structures on a substrate. The method also includes forming a trench between the first dielectric layer and the first conductive structures. The method further includes forming a liner material on a sidewall and a bottom of the trench. In addition, the method includes forming a conductive plug on the liner material in the trench. The method also includes removing the liner material to form an air gap, and the air gap is located between the conductive plug and the first dielectric layer.

Abstract: A communication control method includes receiving a first identifier and a second identifier sent by an accessory, assigning a third identifier for communication for the accessory based on the first identifier and the second identifier, and sending the third identifier to the accessory to enable the accessory to communicate in a network using the third identifier.

Abstract: An antenna structure providing an improved GPS communication includes a substrate having a first surface and a second surface opposite to the first surface, a first antenna attached to the first surface, and a second antenna attached to the second surface. The first antenna and the second antenna generate waves of equal but opposite amplitude and linear orthogonal polarization thereby forming an antenna with circular polarity.

Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.

Abstract: A voltage adjustment device comprises a voltage detector and a signal emitter. The voltage detector electrically connects to an electrical device through a power rail and obtains a voltage detected value of the power rail. The signal emitter electrically connects to the voltage detector and is configured to electrically connect to a host and a power board. The signal emitter generates a power good signal and sends the power good signal to the host when the voltage detected value is larger than a baseline voltage value for the first time. After sending the power good signal, the signal emitter generates a voltage adjustment signal according to the voltage detected value and is configured to send the voltage adjustment signal to the power board for selectively adjusting a voltage provided by the power board.

Abstract: A method of controlling a gimbal includes receiving angular velocity information transmitted by a somatosensory controller, the angular velocity information including an angular velocity of the somatosensory controller in a geodetic coordinate system, determining a target attitude of the gimbal according to the angular velocity information, and controlling the gimbal according to the target attitude.

Abstract: A three-dimensional (3D) integrated circuit (IC) die is provided. In some embodiments, a first IC die comprises a first semiconductor substrate, a first interconnect structure over the first semiconductor substrate, and a first hybrid bond (HB) structure over the first interconnect structure. The first HB structure comprises a HB link layer and a HB contact layer extending from the HB link layer to the first interconnect structure. A second IC die is over the first IC die, and comprises a second semiconductor substrate, a second HB structure, and a second interconnect structure between the second semiconductor substrate and the second HB structure. The second HB structure contacts the first HB structure. A seal-ring structure is in the first and second IC dies. Further, the seal-ring structure extends from the first semiconductor substrate to the second semiconductor substrate, and is defined in part by the HB contact layer.

Abstract: The present disclosure provides a viewing angle adjustment method and device, an electronic device, and a non-transitory computer-readable storage medium, and belongs to the field of computer technologies. The method includes determining an adsorption area of a first virtual object in a virtual scenario according to a distance between the first virtual object and a second virtual object, a size of the adsorption area being positively correlated with the distance between the first virtual object and a second virtual object. In response to an aiming point of the second virtual object being located in the adsorption area, the method includes obtaining a target rotation speed of a viewing angle of the virtual scenario. The method also includes adjusting the viewing angle of the virtual scenario according to the target rotation speed of the viewing angle.

Abstract: An actuator module and a projector having the same are provided. The actuator module includes an actuator including a frame and a lens movably disposed on the frame, and a pair of weighted blocks disposed on the frame and located at two opposite sides of the lens.