Abstract: A cable management system for a server rack, including an adapter bracket coupled to the server rack; a rail assembly coupled to the adapter bracket, the rail assembly including a plurality of apertures; a cable management apparatus slideably coupled to the rail assembly, the cable management apparatus including: a plunger; a plurality of tabs; and a plurality of retention devices, wherein, when the cable management apparatus is coupled to the rail assembly, the plunger extends through one of the apertures to define a position of the cable management apparatus with respect to the rail assembly such that one or more cables of the server rack are positioned between opposing tabs of the plurality of tabs and coupled to the cable management apparatus by one or more of the retention devices.

Abstract: An interfacial layer is formed in a manner that enables a ferroelectric layer to be formed such that formation of ferroelectric crystalline phases (e.g., orthorhombic crystalline phases) in the ferroelectric layer is increased and formation of non-ferroelectric crystalline phases (e.g., monoclinic phases, tetragonal phases) in the ferroelectric layer is reduced. To achieve this, the grain size and/or other properties of the interfacial layer may be controlled during formation of the interfacial layer such that the grain size and/or other properties of the interfacial layer facilitate formation of a larger grain size in the ferroelectric layer. At larger grain sizes in the ferroelectric layer, the concentration of the ferroelectric crystalline phases in the crystal structure of the ferroelectric layer may be increased relative to if the ferroelectric layer were formed to a smaller grain size.

Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.

Abstract: Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.

Abstract: A test strip detecting system includes a test strip, a test strip detecting carrier and a mobile communication apparatus. The test strip detecting carrier includes a container structure, positioning markers and colorimetric calibrating blocks, and the colorimetric calibrating blocks are embedded inside the positioning markers. The test strip is placed in the container structure and reacts with a specimen to generate color blocks. The mobile communication apparatus controls an image capture unit to capture an original image of the test strip placed in the test strip detecting carrier; detects the positioning markers in the original image to obtain a plurality of coordinates of the positioning markers; performs image coordinate calibration according to the plurality of coordinates to generate a calibrated image; and performs a colorimetric calibration for the color blocks and the colorimetric calibrating blocks according to the calibrated image so as to generate a test result.

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a first semiconductor fin and a second semiconductor fin over a semiconductor substrate. The second semiconductor fin is wider than the first semiconductor fin. The method also includes forming a gate stack over the semiconductor substrate, and the gate stack extends across the first semiconductor fin and the second semiconductor fin. The method further includes forming a first source/drain structure on the first semiconductor fin, and the first source/drain structure is p-type doped. In addition, the method includes forming a second source/drain structure on the second semiconductor fin, and the second source/drain structure is n-type doped.

Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.

Abstract: A laser machining device includes a pulsed laser generator, an accommodation chamber, a bandwidth broadening unit and a pulse compression unit. The pulsed laser generator is configured to emit a pulsed laser. The accommodation chamber has a gas inlet. The bandwidth broadening unit is disposed in the accommodation chamber, and is configured to broaden a frequency bandwidth of the pulsed laser to obtain a broad bandwidth pulsed laser. The pulse compression unit is disposed in the accommodation chamber. The bandwidth broadening unit and the pulse compression unit are arranged in order along a laser propagation path, and the pulse compression unit is configured to compress a pulse duration of the broad bandwidth pulsed laser.

Abstract: A portable electronic device including a first body, a second body, a stand, and a hinge structure is provided. The stand has a first pivot part and a second pivot part opposite to the first pivot part, wherein the first pivot part is pivotally connected to the first body, and the second body is pivotally connected to the second pivot part. The hinge structure includes a first bracket secured to the second body, a second bracket secured to the second pivot part of the stand, a first movable base, a first shaft secured to the first bracket and pivoted to the first movable base, a second movable base, a second shaft secured to the first movable base and pivoted to the second movable base, and a sliding shaft fixed to the second movable base and slidably connected to the second bracket.

Abstract: A memory device includes a transistor device; a memory cell electrically coupled to a source or drain of the transistor device, wherein the memory cell includes an FJT structure; and a heating structure formed around the memory cell on a plurality of sides. The FJT structure includes a first conductive electrode having sidewalls that extend in a vertical direction to a first elevation level, a second conductive electrode having sidewalls that extend in the vertical direction to the first elevation level, and a switching barrier disposed between the first conductive electrode and the second conductive electrode and having sidewalls that extend in the vertical direction to the first elevation level, wherein the vertically extending sidewalls of the first conductive electrode, the second conductive electrode, and the switching barrier terminate at the first elevation level. The switching barrier includes ferroelectric (Fe) material that may be polarized to store information.

Abstract: A server information handling system rack has an adjustable depth to fit different sized server rack sleds and adapt the rack to different sized data centers. Fixed vertical supports couple to fixed horizontal supports to define a rack interior that adjusts in depth by sliding horizontal supports that change a position of extensible vertical supports coupled to the sliding horizontal supports. When a desired rack depth is set, the fixed horizontal supports and sliding horizontal supports are affixed to each other, such as with a screw that couples to a threaded nut of the fixed horizontal support.

Abstract: A semiconductor device includes a ferroelectric tunnel junction (FTJ), wherein the ferroelectric tunnel junction includes a first electrode, a ferroelectric layer disposed over the first electrode, and a second electrode disposed over the ferroelectric layer. The first electrode contains nitrogen or oxygen and is characterized by a first percentage of nitrogen or oxygen. The second electrode contains nitrogen or oxygen and is characterized by a second percentage of nitrogen or oxygen. The first percentage is different from the second percentage.

Abstract: A semiconductor device includes a first capacitor having a ferroelectric film disposed between two electrodes, a second capacitor, having another dielectric film disposed between two electrodes. A first voltage is applied across the first capacitor such that the ferroelectric film is polarized, altering the effective resistance through the device. A second voltage is applied across the first capacitor, such that a leakage current transits the ferroelectric film, and accumulates along an electrode of the second capacitor, and the gate of a transistor, thereby effecting a change to the drain to source resistance of the transistor which may be measured to determine the polarization state of the ferroelectric film.

Abstract: A method of forming a memory device according to the present disclosure includes forming a trench in a first substrate of a first wafer, depositing a data-storage element in the trench, performing a thermal treatment to the first wafer to improve a crystallization in the data-storage element, forming a first redistribution layer over the first substrate, forming a transistor in a second substrate of a second wafer, forming a second redistribution layer over the second substrate, and bonding the first wafer with the second wafer after the performing of the thermal treatment. The data-storage element is electrically coupled to the transistor through the first and second redistribution layers.

Abstract: A method according to the present disclosure includes forming a plurality of transistors in a first wafer and forming a memory array in a second wafer. A first surface of the first wafer includes a first plurality of bonding pads electrically coupled to the transistors. The memory array includes a plurality of ferroelectric tunnel junction (FTJ) stacks. A second surface of the second wafer includes a second plurality of bonding pads electrically coupled to the FTJ stacks. The method also includes performing a thermal treatment to the FTJ stacks in the second wafer, and after the performing of the thermal treatment, bonding the first surface of the first wafer with the second surface of the second wafer. The transistors are coupled to the memory cells through the first plurality of bonding pads and the second plurality of bonding pads.

Abstract: A method according to the present disclosure includes forming a bottom electrode layer over a substrate, forming an insulator layer over the bottom electrode layer, depositing a semiconductor layer over the bottom electrode layer, depositing a ferroelectric layer over the semiconductor layer, forming a top electrode layer over the ferroelectric layer, and patterning the bottom electrode layer, the insulator layer, the semiconductor layer, the ferroelectric layer, and the top electrode layer to form a memory stack. The semiconductor layer includes a plurality of portions with different thicknesses.

Abstract: A method for providing drug recommendation includes: calculating a plurality of relative cell viabilities respectively corresponding to a plurality of candidate drugs based on viable cell counts of a patient's circulating tumor cell (CTC)-derived organoid cultures and viable cell counts of the CTC-derived organoid cultures respectively reacted with the candidate drugs; and providing drug recommendation of the candidate drugs based on the relative cell viabilities. A device for providing drug recommendation is also provided.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes one or more interconnect wires and vias arranged within one or more interconnect dielectric layers over a substrate. Further, a bottom electrode is disposed over the one or more interconnect wires and vias and comprises a first material having a first work function. A top electrode is disposed over the bottom electrode and comprises a second material having a second work function. The first material is different than the second material, and the first work function is different than the second work function. An anti-ferroelectric layer is disposed between the top and bottom electrodes.

Abstract: The present disclosure relates to an integrated chip including a first metal layer over a substrate. A second metal layer is over the first metal layer. An ionic crystal layer is between the first metal layer and the second metal layer. A metal oxide layer is between the first metal layer and the second metal layer. The first metal layer, the second metal layer, the ionic crystal layer, and the metal oxide layer are over a transistor device that is arranged along the substrate.