Patents by Inventor Yi-Hsuan Chen
Yi-Hsuan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240397656Abstract: A server rack includes a frame and a top panel. The frame includes a top frame structure and holds multiple information handling systems. The top panel includes a main portion and a sliding portion. The main portion is secured in a fixed location on the top frame structure. The sliding portion is adjustably coupled to a first edge of the main portion. The sliding portion transitions between a closed portion and an open position. A space between the sliding portion and an outer edge of the top frame structure is larger when the sliding portion is in the open position as compared to when the sliding portion is in the closed position.Type: ApplicationFiled: May 26, 2023Publication date: November 28, 2024Inventor: Yi-Hsuan Chen
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Publication number: 20240395894Abstract: Middle-of-line (MOL) interconnects and corresponding techniques for forming the MOL interconnects are disclosed herein. An exemplary MOL interconnect structure includes a barrier-free source/drain contact, a barrier-free source/drain via, and a barrier-free gate via disposed in an insulator layer. The barrier-free source/drain is disposed on an epitaxial source/drain, and the barrier-free source/drain contact includes tungsten, molybdenum, or a combination thereof. The barrier-free source/drain via is disposed on the barrier-free source/drain contact and the barrier-free source/drain via includes molybdenum. The barrier-free gate via is disposed on a gate stack disposed adjacent to the epitaxial source/drain, and the barrier-free gate via includes tungsten, molybdenum, or a combination thereof. A width of the barrier-free source/drain via and/or the barrier-free gate via may be less than about 16 nm. The barrier-free source/drain via and/or the barrier-free gate via may be formed at the same time (e.g.Type: ApplicationFiled: September 14, 2023Publication date: November 28, 2024Inventors: Hsiao Chu Chen, Chung-Ting Li, Wei-Hsuan Chen, Che Chia Chang, Kan-Ju Lin, Yi-Hsien Chen
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Publication number: 20240397728Abstract: In some embodiments, the present disclosure provides an integrated chip including a first electrode made of a metal; a second electrode disposed over the first electrode; a ferroelectric layer between the first and second electrodes; and an interfacial layer separating the ferroelectric layer and the first electrode, the interfacial layer comprising a semiconductor material and configured to space the first electrode from the ferroelectric layer.Type: ApplicationFiled: May 22, 2023Publication date: November 28, 2024Inventors: Yi-Hsuan Chen, Kuo-Ching Huang, Yi Ching Ong, Kuen-Yi Chen
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Publication number: 20240397187Abstract: A method for tuning a plurality of image signal processor (ISP) parameters of a camera includes performing a first iteration. The first iteration includes extracting image features from an initial image, arranging a tuning order of the plurality of ISP parameters of the camera according to at least the plurality of ISP parameters and the image features, tuning a first set of the ISP parameters according to the tuning order to generate a first tuned set of the ISP parameters, and replacing the first set of the ISP parameters with the first tuned set of the ISP parameters in the plurality of ISP parameters to generate a plurality of updated ISP parameters.Type: ApplicationFiled: May 23, 2023Publication date: November 28, 2024Applicant: MEDIATEK INC.Inventors: Tsung-Han Chan, Yi-Hsuan Huang, Hsiao-Chien Yang, Ding-Yun Chen, Yi-Ping Liu, Chin-Yuan Tseng, Ming-Feng Tien, Shih-Hung Liu, Shuo-En Chang, Yu-Chuan Chuang, Cheng-Tsai Ho, Ying-Jui Chen, Chi-Cheng Ju
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Publication number: 20240379656Abstract: The present disclosure relates to an integrated chip including a first metal layer over a substrate. A second metal layer is over the first metal layer. An ionic crystal layer is between the first metal layer and the second metal layer. A metal oxide layer is between the first metal layer and the second metal layer. The first metal layer, the second metal layer, the ionic crystal layer, and the metal oxide layer are over a transistor device that is arranged along the substrate.Type: ApplicationFiled: July 23, 2024Publication date: November 14, 2024Inventors: Yi Ching Ong, Kuen-Yi Chen, Yi-Hsuan Chen, Kuo-Ching Huang, Harry-Hak-Lay Chuang
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Publication number: 20240371467Abstract: Methylation biomarker selection apparatuses and methods are provided. A methylation biomarker selection apparatus stores a plurality of first data sets and a plurality of second data sets, wherein each of the first data sets includes a plurality of methylation degrees corresponding to a plurality of methylation loci, and each of the second data sets includes at least one medical record. The methylation biomarker selection apparatus determines a plurality of primary biomarkers by identifying a plurality of differentiable loci from the methylation loci according to the methylation degrees, determines a plurality of secondary biomarkers by identifying a plurality of comorbidities of a target disease, and associated genes thereof based on the second data sets, and determines a plurality of candidate biomarkers based on a correlation analysis of the primary biomarkers and the secondary biomarkers.Type: ApplicationFiled: September 22, 2022Publication date: November 7, 2024Applicant: ACT Genomics (IP) LimitedInventors: Tun-Wen PAI, Yi-Hsuan LAI, Shu-Jen CHEN, Fang-Cheng SU
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Publication number: 20240371753Abstract: An integrated circuit (IC) structure includes a first transistor including a first gate structure adjacent to first and second portions of a first active area positioned in a semiconductor substrate, a second transistor including a second gate structure adjacent to the second portion of the first active area and a third portion of the first active area, an isolation structure overlying the second portion of the first active area, and first through third metal-like defined (MD) segments overlying the respective first through third portions of the first active area. The first and third MD segments are electrically connected to the respective first and third portions of the first active area, and the second MD segment is electrically isolated from the second portion of the first active area by the isolation structure.Type: ApplicationFiled: July 12, 2024Publication date: November 7, 2024Inventors: Chi-Yu LU, Yi-Hsun CHIU, Chih-Liang CHEN, Chih-Yu LAI, Shang-Hsuan CHIU
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Patent number: 12133351Abstract: A cable management system for a server rack, including an adapter bracket coupled to the server rack; a rail assembly coupled to the adapter bracket, the rail assembly including a plurality of apertures; a cable management apparatus slideably coupled to the rail assembly, the cable management apparatus including: a plunger; a plurality of tabs; and a plurality of retention devices, wherein, when the cable management apparatus is coupled to the rail assembly, the plunger extends through one of the apertures to define a position of the cable management apparatus with respect to the rail assembly such that one or more cables of the server rack are positioned between opposing tabs of the plurality of tabs and coupled to the cable management apparatus by one or more of the retention devices.Type: GrantFiled: October 26, 2022Date of Patent: October 29, 2024Assignee: Dell Products L.P.Inventors: Jordan C. Hogan, Yi-Hsuan Chen
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Publication number: 20240352584Abstract: The present disclosure generally provides an apparatus and method for gas diffuser support structure for a vacuum chamber. The gas diffuser support structure comprises a backing plate having a central bore, and a gas deflector having a length and a width unequal to the length coupled to the backing plate by a plurality of outward fasteners coupled to a plurality of outward threaded holes formed in the backing plate, in which a spacer is disposed between the backing plate and the gas deflector, and in which a length to width ratio of the gas deflector is about 0.1:1 to about 10:1.Type: ApplicationFiled: March 27, 2024Publication date: October 24, 2024Inventors: Yu-Hsuan WU, Teng Mao WANG, Yan-Chi PAN, Yi-Jiun SHIU, Jrjyan Jerry CHEN, Cheng-yuan LIN, Hsiao-Ling YANG, Yu-Min WANG, Wen-Hao WU
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Publication number: 20240355826Abstract: A method includes forming a gate stack on a first portion of a semiconductor fin, removing a second portion of the semiconductor fin to form a recess, and forming a source/drain region starting from the recess. The formation of the source/drain region includes performing a first epitaxy process to grow a first semiconductor layer, wherein the first semiconductor layer has straight-and-vertical edges, and performing a second epitaxy process to grow a second semiconductor layer on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are of a same conductivity type.Type: ApplicationFiled: July 1, 2024Publication date: October 24, 2024Inventors: Jung-Chi Tai, Yi-Fang Pai, Tsz-Mei Kwok, Tsung-Hsi Yang, Jeng-Wei Yu, Cheng-Hsiung Yen, Jui-Hsuan Chen, Chii-Horng Li, Yee-Chia Yeo, Heng-Wen Ting, Ming-Hua Yu
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Publication number: 20240329646Abstract: A drone monitoring and control system includes: a drone, a mobile vehicle configured to carry the drone, a computing device and a display device. The drone is disposed with an operation payload and a camera. The drone performs an output operation of the operation payload. The computing device outputs a first environment image according to a first image captured by the camera, generates a flight trajectory of the drone and a movement trajectory of the mobile vehicle according to an operation data set including a target location of a target object and 3D terrain data, controls the drone to move to a set location according to the flight trajectory, and controls the drone to stay at the set location when a distance between the target and set locations is less than a preset distance. The display device displays the first environment image and the 3D terrain data.Type: ApplicationFiled: March 27, 2024Publication date: October 3, 2024Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yi-Yuan CHEN, Cheng-Hsuan LIN, Hsin-Tien YEH
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Publication number: 20240332004Abstract: A method includes forming a gate dielectric on a semiconductor region, depositing an aluminum nitride layer on the gate dielectric, depositing an aluminum oxide layer on the aluminum nitride layer, performing an annealing process to drive aluminum in the aluminum nitride layer into the gate dielectric, removing the aluminum oxide layer and the aluminum nitride layer, and forming a gate electrode on the gate dielectric.Type: ApplicationFiled: July 3, 2023Publication date: October 3, 2024Inventors: Chi On Chui, Cheng-Hao Hou, Da-Yuan Lee, Pei Ying Lai, Yi Hsuan Chen, Jia-Yun Xu
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Publication number: 20240321731Abstract: A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.Type: ApplicationFiled: June 5, 2024Publication date: September 26, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hsin HU, Yu-Chiun LIN, Yi-Hsuan CHUNG, Chung-Peng HSIEH, Chung-Chieh YANG, Po-Nien CHEN
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Publication number: 20240322040Abstract: A first n-type transistor includes a first channel component, an undoped first gate dielectric layer disposed over the first channel component, and a first gate electrode disposed over the undoped first gate dielectric layer. A second n-type transistor includes a second channel component and a doped second gate dielectric layer disposed over the second channel component. The second gate dielectric layer is doped with a p-type dipole material. A second gate electrode is disposed over the second gate dielectric layer. At least one of the first n-type transistor or the second n-type transistor further includes an aluminum-free conductive layer. The aluminum-free conductive layer is disposed between the first gate dielectric layer and the first gate electrode or between the second gate dielectric layer and the second gate electrode.Type: ApplicationFiled: September 29, 2023Publication date: September 26, 2024Inventors: Pei Ying Lai, Yi Hsuan Chen, Yen-Fu Chen, Jia-Yun Xu, Cheng-Hao Hou, Da-Yuan Lee, Chi On Chui
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Patent number: 12101608Abstract: A Bluetooth audio broadcasting system includes: an audio broadcasting device, a first Bluetooth member device, and a second Bluetooth member device. The audio broadcasting device broadcasts BLE audio packets and transmits a predetermined volume instruction to the first Bluetooth member device and the second Bluetooth member device before broadcasting the BLE audio packets. The first Bluetooth member device parses the BLE audio packets to acquire a predetermined audio data, controls a first audio playback circuit to playback the predetermined audio data, and configures an audio volume of the first audio playback circuit in advance according to the predetermined volume instruction. The second Bluetooth member device parses the BLE audio packets to acquire the predetermined audio data, controls a second audio playback circuit to playback the predetermined audio data, and configures an audio volume of the second audio playback circuit in advance according to the predetermined volume instruction.Type: GrantFiled: July 26, 2023Date of Patent: September 24, 2024Assignee: REALTEK SEMICONDUCTOR CORP.Inventors: Yu Hsuan Liu, Yung Chieh Lin, Qing Gu, Bi Wei, Yi-Cheng Chen
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Patent number: 12101614Abstract: A Bluetooth communication system is provided, which comprises a Bluetooth host device and a Bluetooth device set. The connections between the Bluetooth host device and the Bluetooth device set complies with the specification of Bluetooth Low Energy Audio technology. The Bluetooth device set comprises at least a first member device and a second member device. The first member device and the second member device may be configured in a first mode wherein uplink audio signal transmission is allowed, and the connections are carried out by isochronous streaming channels respectively. The first member device transmits captured voice data to the Bluetooth host device, while the second member device does not. When an event is triggered, the first member device can notify the second member device through direct wireless connection, so that the first member device and the second member device can carry out subsequent voice input handover procedures.Type: GrantFiled: February 9, 2022Date of Patent: September 24, 2024Assignee: REALTEK SEMICONDUCTOR CORP.Inventors: Qing Gu, Bi Wei, Yu Hsuan Liu, Yi-Cheng Chen, Cheng Cai, Hung Chuan Chang
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Publication number: 20240313017Abstract: A pixel of an image sensor includes: a semiconductor material substrate; a photosensitive region formed in the substrate, the photosensitive region generating photo-induced electrical charge in response to illumination with light; a storage node formed in the substrate proximate to the photosensitive region, the storage node selectively receiving and storing photo-induced electrical charge generated by the photosensitive region; a transfer gate structure formed between the photosensitive region and the storage node to regulate a transfer of the photo-induced electrical charge therebetween; an inter-layer dielectric (ILD) formed over the transfer gate structure; and a light-shielding structure contained within the ILD and covering the transfer gate structure so as to inhibit light from reaching the transfer gate structure, the light-shielding structure including an indentation on a first end surface of the light-shielding structure, which first end surface is proximate to the transfer gate structure, wherein aType: ApplicationFiled: March 17, 2023Publication date: September 19, 2024Inventors: Wen-Sheng Wang, Yi-Hsuan Fan, Yen-Ting Chen
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Patent number: 12096192Abstract: A Bluetooth communication system is provided, which comprises a Bluetooth host device and a Bluetooth device set. The connections between the Bluetooth host device and the Bluetooth device set complies with the specification of Bluetooth Low Energy Audio technology. The Bluetooth device set comprises at least a first member device and a second member device. The first member device and the second member device may be configured in a first mode and a second mode respectively, and the connections are carried out by isochronous streaming channels. The first member device transmits captured voice data to the Bluetooth main control device, while the second member device does not. When an event is triggered, the first member device can notify the second member device through the Bluetooth host device, so that the first member device and the second member device can carry out subsequent voice input handover procedures.Type: GrantFiled: February 9, 2022Date of Patent: September 17, 2024Assignee: Realtek Semiconductor Corp.Inventors: Qing Gu, Bi Wei, Yu Hsuan Liu, Yi-Cheng Chen, Cheng Cai, Hung Chuan Chang
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Publication number: 20240306078Abstract: A Bluetooth audio broadcasting system includes: an audio broadcasting device arranged to operably broadcast BLE (Bluetooth Low Energy) audio packets; a first Bluetooth member device arranged to operably parse the BLE audio packets to acquire a predetermined audio data and to operably control a first audio playback circuit to playback the predetermined audio data; and a second Bluetooth member device arranged to operably parse the BLE audio packets to acquire the predetermined audio data and to operably control a second audio playback circuit to playback the predetermined audio data. When the audio broadcasting device receives an alert signal, or when a specific ambient sound occurs in the surrounding environment of the audio broadcasting device, the audio broadcasting device utilizes a target control command to instruct the first and second Bluetooth member devices to synchronously reduce their volume to be lower than a predetermined threshold.Type: ApplicationFiled: May 3, 2024Publication date: September 12, 2024Applicant: Realtek Semiconductor Corp.Inventors: Yi-Cheng CHEN, Bi WEI, Yu Hsuan LIU, Chia Chun HUNG
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Publication number: 20240292319Abstract: A Bluetooth audio broadcasting system includes: an audio broadcasting device arranged to operably broadcast BLE (Bluetooth Low Energy) audio packets; a first Bluetooth member device arranged to operably parse the BLE audio packets to acquire a predetermined audio data and to operably control a first audio playback circuit to playback the predetermined audio data; and a second Bluetooth member device arranged to operably parse the BLE audio packets to acquire the predetermined audio data and to operably control a second audio playback circuit to playback the predetermined audio data. When the first or second Bluetooth member device receives an alert signal, or when a specific ambient sound occurs in the surrounding environment of the first or second Bluetooth member device, the audio broadcasting device utilizes a target control command to instruct the first and second Bluetooth member devices to synchronously reduce their volume to be lower than a predetermined threshold.Type: ApplicationFiled: May 3, 2024Publication date: August 29, 2024Applicant: Realtek Semiconductor Corp.Inventors: Yi-Cheng CHEN, Bi WEI, Yu Hsuan LIU, Chia Chun HUNG