Abstract: A system and method for maximizing bandwidth in an uplink for a 5G communication system is disclosed. Multiple end devices generate image streams. A gateway is coupled to the end devices. The gateway includes a gateway monitor agent collecting utilization rate data of the gateway and an image inspector collecting inspection data from the received image streams. An edge server is coupled to the gateway. The edge server includes an edge server monitor agent collecting utilization rate data of the edge server. An analytics manager is coupled to the gateway and the edge server. The analytics manager is configured to determine an allocation strategy based on the collected utilization rate data from the gateway and the edge server.

Abstract: The present application relates to dual anti-angiogenic and anti-inflammatory effects of recombinant thrombomodulin domain 1 (TMD1). Specifically, an isolated recombinant polypeptide comprising an amino acid sequence that is at least 80% identical to TMD1 for use in treating an eye disease and/or an eye disorder associated with pathological ocular angiogenesis (POA) in a subject in need thereof is disclosed. The length of the recombinant polypeptide is no more than 200 amino acid residues. The eye disease and/or the eye disorder may be at least one selected from the group consisting of retinopathy of prematurity, diabetic retinopathy, and age-related macular degeneration. Use of TMD1 in the manufacture of a medicament for treating an eye disease and/or an eye disorder associated with vascular endothelial growth factor (VEGF)-induced ocular angiogenesis and/or hypoxia-inducible factor-1? (HIF-1?)-VEGF pathway is also disclosed.

Abstract: Methods of performing backside etching processes on source/drain regions and gate structures of semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first transistor structure; a first interconnect structure on a front-side of the first transistor structure; and a second interconnect structure on a backside of the first transistor structure, the second interconnect structure including a first dielectric layer on the backside of the first transistor structure; a contact extending through the first dielectric layer to a source/drain region of the first transistor structure; and first spacers along sidewalls of the contact between the contact and the first dielectric layer, sidewalls of the first spacers facing the first dielectric layer being aligned with sidewalls of the source/drain region of the first transistor structure.

Abstract: An electronic package and a manufacturing method thereof, which embeds an electronic structure acting as an auxiliary functional component and a plurality of conductive pillars in an encapsulation layer, and disposes an electronic component on the encapsulation layer, so as to facilitate electrical transmission with the electronic component in a close range.

Abstract: The present application relates to dual anti-angiogenic and anti-inflammatory effects of recombinant thrombomodulin domain 1 (TMD1). Specifically, an isolated recombinant polypeptide comprising an amino acid sequence that is at least 80% identical to TMD1 for use in treating an eye disease and/or an eye disorder associated with pathological ocular angiogenesis (POA) in a subject in need thereof is disclosed. The length of the recombinant polypeptide is no more than 200 amino acid residues. The eye disease and/or the eye disorder may be at least one selected from the group consisting of retinopathy of prematurity, diabetic retinopathy, and age-related macular degeneration. Use of TMD1 in the manufacture of a medicament for treating an eye disease and/or an eye disorder associated with vascular endothelial growth factor (VEGF)-induced ocular angiogenesis and/or hypoxia-inducible factor-1? (HIF-1?)-VEGF pathway is also disclosed.

Abstract: The present invention discloses a detection and analysis apparatus, comprising a photo sensing device, comprising a plurality of sensing elements linearly arranged to form a first array, for detecting a signal of the thickness change of the cake at a linear position of the filter medium; a driving device, for driving the photo sensing device to move relatively parallel to the filter medium on the top of the cake so that the photo sensing device detects the thickness change of the cake on at least one local plane of the filter medium; and a data processing device, coupling to the photo sensing device, for continuously processing and analyzing the signal detected by the photo sensing device to thereby in-situ estimate the thickness change of the cake on the at least one local plane of the filter medium during the filtration process.

Abstract: The present invention discloses a detection and analysis apparatus, comprising a photo sensing device, comprising a plurality of sensing elements linearly arranged to form a first array, for detecting a signal of the thickness change of the cake at a linear position of the filter medium; a driving device, for driving the photo sensing device to move relatively parallel to the filter medium on the top of the cake so that the photo sensing device detects the thickness change of the cake on at least one local plane of the filter medium; and a data processing device, coupling to the photo sensing device, for continuously processing and analyzing the signal detected by the photo sensing device to thereby in-situ estimate the thickness change of the cake on the at least one local plane of the filter medium during the filtration process.

Abstract: A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

Abstract: A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate.

Abstract: A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate.

Abstract: A structure and method for improving contact resistance in an organic light emitting diode integrated with a color filter, the structure and method mainly utilize a metal to be filled in a contact well on a source/drain metal layer or in a contact well corresponding to the position of the source/drain metal layer on a poly-silicon island to effectively reduce the contact resistance between pixel electrode and thin film transistor, therefore color display quality of the organic light emitting diode is improved.

Abstract: A thin film transistor for fabricating on a flexible substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a channel layer, a first conductive pattern, and a second conductive pattern. The gate and the gate insulating layer are disposed on the flexible substrate, and the gate insulating layer covers the gate. The channel layer is disposed on the gate insulating layer and located above the gate. The channel layer has a first contact region and multiple second contact regions, wherein the first contact region is located between the second contact regions. In addition, the first conductive pattern is disposed on a portion of the gate insulating layer and the first contact region; and the second conductive pattern electrically insulated from the first conductive pattern is disposed on a portion of the gate insulating layer and the second contact region.

Abstract: A pixel structure of an active matrix organic light-emitting diode (AMOLED) includes an organic light-emitting diode (OLED), a data line, at least one scan line, at least one switch thin film transistor (TFT), at least one driving TFT and at least one storage capacitor with two transparent electrodes. Since both the electrodes of the transparent storage capacitor are formed by transparent material, the aperture ratio of the pixel and the area of the capacitor largely increase and can reach 50%˜95% of a pixel area. Thus, the display quality of an AMOLED panel can be improved.

Abstract: A pixel structure utilized for flexible displays, which is suitably disposed on a flexible substrate and is driven by a data line and a scan line, is characterized in that the pixel structure comprises a plurality of thin film transistors. In the pixel structure, the plural thin film transistors are connected by various connection layouts so as to solve the prior-art problem that the pixel structure can't functional normally since the single transistor contained in the pixel structure is damaged by alignment error caused by the deformation in the manufacturing process of the flexible substrate or the buckling of the flexible display while it is being used, and further to improve the reliability of the pixel structure disposed on the flexible substrate.

Abstract: A thin-film transistor (TFT) is described to have a gate layer, an insulating layer, a semiconductor layer, and a source/drain layer formed on a flexible substrate. The source and the drain layers are separated by a channel with a special shape. This does not only increase the aspect ratio of the channel per unit area, the source and the drain also have multiple directions for transmitting carriers. The carrier mobility of the TFT is thus enhanced with uniform and stable circuit properties.

Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.