Patents by Inventor Yihwan Kim
Yihwan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145288Abstract: A substrate processing apparatus includes a chamber providing a space where a semiconductor process is performed on a semiconductor substrate, a substrate plate configured to support the semiconductor substrate, the substrate plate having a central region and a peripheral region surrounding the central region, a central embossing pattern on the central region and configured to support a central portion of the semiconductor substrate, a plurality of first embossing patterns radially arranged around the central embossing pattern on the peripheral region, each of the plurality of first embossing patterns extending radially outward from the central embossing pattern with a first length, and a plurality of second embossing patterns respectively provided between the first embossing patterns on the peripheral region, each of the plurality of second embossing patterns extending radially outward from the central embossing pattern with a second length that is less than the first length.Type: ApplicationFiled: May 25, 2023Publication date: May 2, 2024Inventors: Youngbok LEE, Yihwan KIM, Seongkeun CHO, Sangchul HAN
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Publication number: 20240068748Abstract: A wafer heating apparatus may include a heating chamber having an internal space and a heating lamp disposed in the internal space of the heating chamber. The heating lamp may be configured to heat a wafer. The heating lamp may include a plurality of lamps. Each of the plurality of lamps may have circular band shapes with open regions. At least one lamp may be disposed in at least one region among regions adjacent to the open regions of the plurality of lamps.Type: ApplicationFiled: June 1, 2023Publication date: February 29, 2024Inventors: Joohee KIM, Youngjae JEON, Jaehyun CHO, Yihwan KIM, Sangmin LEE
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Publication number: 20240060185Abstract: A substrate processing apparatus includes a chamber including a susceptor to support a substrate, a reflective housing outside the chamber, a light source in the reflective housing, the light source being configured to emit a light toward the susceptor, and a light adjuster between the light source and the susceptor, the light adjuster including a support portion supported inside the chamber and a lens coupled to the support portion, and the lens including a transmission portion configured to transmit the light and a scattering pattern portion configured to scatter the light.Type: ApplicationFiled: August 8, 2023Publication date: February 22, 2024Inventors: Yeontae KIM, Yihwan KIM, Hunyong PARK, Keesoo PARK, Janghwi LEE, Sungho JANG
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Publication number: 20240019311Abstract: A substrate temperature measuring device includes a sensor which senses a first amount of light of a first light having a first wavelength, a second amount of light of a second light having a second wavelength, and a third amount of light of a third light having a third wavelength provided from a substrate, a first calculator to calculate a first temperature for the first wavelength, a second temperature for the second wavelength, and a third temperature of the wavelength through the first amount of light, the second amount of light and the third amount of light which are sensed, and a second calculator to calculate emissivity of the substrate and reflected energy of the substrate through the first temperature, the second temperature, and the third temperature, wherein a temperature of the substrate is calculated through the calculated emissivity of the substrate and the reflected energy of the substrate.Type: ApplicationFiled: May 17, 2023Publication date: January 18, 2024Inventors: Yeon Tae KIM, Hun Yong PARK, Yihwan KIM, Ji Hoon KIM, Kee Soo PARK
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Publication number: 20230315813Abstract: Provided is a method for classifying data in an electronic apparatus, including obtaining target data, obtaining first classification information by using a classifier set including a plurality of classifiers based on the target data, obtaining second classification information by using a neural network model based on the target data, comparing the first classification information and the second classification information, and verifying the classifier set based on a result of comparing the first classification information and the second classification information.Type: ApplicationFiled: March 6, 2023Publication date: October 5, 2023Applicant: AiM Future Inc.Inventors: Yihwan KIM, Hoseok CHANG, Namsoon JUNG
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Publication number: 20220254878Abstract: A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.Type: ApplicationFiled: April 26, 2022Publication date: August 11, 2022Inventors: Sungkeun Lim, Unki Kim, Yuyeong Jo, Yihwan Kim, Jinbum Kim, Pankwi Park, Ilgyou Shin, Seunghun Lee
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Patent number: 11322583Abstract: A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.Type: GrantFiled: March 17, 2020Date of Patent: May 3, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Sungkeun Lim, Unki Kim, Yuyeong Jo, Yihwan Kim, Jinbum Kim, Pankwi Park, Ilgyou Shin, Seunghun Lee
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Publication number: 20220052187Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.Type: ApplicationFiled: October 29, 2021Publication date: February 17, 2022Inventors: Dong Chan SUH, Sangmoon LEE, Yihwan KIM, Woo Bin SONG, Dongsuk SHIN, Seung Ryul LEE
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Patent number: 11171224Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.Type: GrantFiled: June 2, 2020Date of Patent: November 9, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Chan Suh, Sangmoon Lee, Yihwan Kim, Woo Bin Song, Dongsuk Shin, Seung Ryul Lee
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Publication number: 20200373385Abstract: A semiconductor device includes; an active region; an isolation region defining the active region; a barrier layer on the active region; an upper semiconductor layer on the barrier layer; and a gate structure covering an upper surface, a lower surface, and side surfaces of the upper semiconductor layer in a first direction. The first direction is a direction parallel to an upper surface of the active region, and the barrier layer is disposed between the gate structure and the active region.Type: ApplicationFiled: March 17, 2020Publication date: November 26, 2020Inventors: Sungkeun Lim, Unki Kim, Yuyeong Jo, Yihwan Kim, Jinbum Kim, Pankwi Park, Ilgyou Shin, Seunghun Lee
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Publication number: 20200303523Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.Type: ApplicationFiled: June 2, 2020Publication date: September 24, 2020Inventors: Dong Chan SUH, Sangmoon LEE, Yihwan KIM, Woo Bin SONG, Dongsuk SHIN, Seung Ryul LEE
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Patent number: 10731272Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support including a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.Type: GrantFiled: February 22, 2019Date of Patent: August 4, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Nyi O. Myo, Kevin Bautista, Zhiyuan Ye, Schubert S. Chu, Yihwan Kim
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Patent number: 10692993Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.Type: GrantFiled: April 18, 2018Date of Patent: June 23, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong Chan Suh, Sangmoon Lee, Yihwan Kim, Woo Bin Song, Dongsuk Shin, Seung Ryul Lee
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Publication number: 20190257000Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support including a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.Type: ApplicationFiled: February 22, 2019Publication date: August 22, 2019Inventors: NYI O. MYO, KEVIN BAUTISTA, ZHIYUAN YE, SCHUBERT S. CHU, YIHWAN KIM
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Patent number: 10304834Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; an active pattern spaced apart from the substrate and extending in a first direction; and a gate structure on the active pattern and extending in a second direction crossing the first direction, wherein a lower portion of the active pattern extends in the first direction and includes a first lower surface that is sloped with respect to an upper surface of the substrate.Type: GrantFiled: March 29, 2018Date of Patent: May 28, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sangmoon Lee, Jungtaek Kim, Yihwan Kim, Woo Bin Song, Dongsuk Shin, Seung Ryul Lee
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Patent number: 10260164Abstract: Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.Type: GrantFiled: May 15, 2017Date of Patent: April 16, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Nyi O. Myo, Kevin Bautista, Zhiyuan Ye, Schubert S. Chu, Yihwan Kim
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Publication number: 20190081160Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.Type: ApplicationFiled: April 18, 2018Publication date: March 14, 2019Inventors: Dong Chan SUH, Sangmoon LEE, Yihwan KIM, Woo Bin SONG, Dongsuk SHIN, Seung Ryul LEE
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Publication number: 20190067285Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; an active pattern spaced apart from the substrate and extending in a first direction; and a gate structure on the active pattern and extending in a second direction crossing the first direction, wherein a lower portion of the active pattern extends in the first direction and includes a first lower surface that is sloped with respect to an upper surface of the substrate.Type: ApplicationFiled: March 29, 2018Publication date: February 28, 2019Inventors: Sangmoon LEE, Jungtaek KIM, Yihwan KIM, Woo Bin SONG, Dongsuk SHIN, Seung Ryul LEE
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Patent number: 10208401Abstract: Disclosed is a substrate treating apparatus comprising a wafer chuck on which a substrate is placed, an injector unit on a side of the wafer chuck and injecting process gases that include a first gas and a second gas, and a gas supply unit supplying the process gases to the injector unit. The gas supply unit comprises first and second gas supply sources that respectively accommodate the first and second gases, first and second gas supply lines that respectively connect the first and second gas supply sources to the injector unit, and first and second heating units that are respectively disposed on the first and second gas supply lines. The first heating units disposed on the first gas supply line have a density per unit length greater than the density per unit length of the second heating units disposed on the second gas supply line.Type: GrantFiled: July 31, 2017Date of Patent: February 19, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Keum Seok Park, Sunjung Kim, Yihwan Kim
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Publication number: 20180266017Abstract: Disclosed is a substrate treating apparatus comprising a wafer chuck on which a substrate is placed, an injector unit on a side of the wafer chuck and injecting process gases that include a first gas and a second gas, and a gas supply unit supplying the process gases to the injector unit. The gas supply unit comprises first and second gas supply sources that respectively accommodate the first and second gases, first and second gas supply lines that respectively connect the first and second gas supply sources to the injector unit, and first and second heating units that are respectively disposed on the first and second gas supply lines. The first heating units disposed on the first gas supply line have a density per unit length greater than the density per unit length of the second heating units disposed on the second gas supply line.Type: ApplicationFiled: July 31, 2017Publication date: September 20, 2018Inventors: KEUM SEOK PARK, SUNJUNG KIM, YIHWAN KIM