Patents by Inventor Yi Jing

Yi Jing has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8897325
    Abstract: A fiber laser having a ring resonance path comprises a pump light source, a Yb-doped optical fiber and a light modulation unit. The pump light source emits a pump light. The Yb-doped optical fiber is coupled with the pump light. The light modulation unit includes a grating pair, a diaphragm and two reflective elements. The grating pair is coupled with the pump light. The diaphragm includes an aperture. The light transmitted by the grating pair partially passes through the aperture and reaches one of the reflective elements to become a reflective light, and the reflective light passes through the aperture and is transmitted through the grating pair and the other reflective element to be coupled back with the ring resonance path.
    Type: Grant
    Filed: September 10, 2013
    Date of Patent: November 25, 2014
    Assignee: National Tsing Hua University
    Inventors: Ci-Ling Pan, Alexey Zaytsev, Chih-Hsuan Lin, Yi-Jing You, Feng-Hua Tsai, Chi-Luen Wang
  • Publication number: 20140341237
    Abstract: A fiber laser having a ring resonance path comprises a pump light source, a Yb-doped optical fiber and a light modulation unit. The pump light source emits a pump light. The Yb-doped optical fiber is coupled with the pump light. The light modulation unit includes a grating pair, a diaphragm and two reflective elements. The grating pair is coupled with the pump light. The diaphragm includes an aperture. The light transmitted by the grating pair partially passes through the aperture and reaches one of the reflective elements to become a reflective light, and the reflective light passes through the aperture and is transmitted through the grating pair and the other reflective element to be coupled back with the ring resonance path.
    Type: Application
    Filed: September 10, 2013
    Publication date: November 20, 2014
    Applicant: National Tsing Hua University
    Inventors: Ci-Ling PAN, Alexey ZAYTSEV, Chih-Hsuan LIN, Yi-Jing YOU, Feng-Hua TSAI, Chi-Luen WANG
  • Publication number: 20140326441
    Abstract: The present invention involves both the geometrical specification of a structure and positioning the structure in the cluster layout to achieve rapid heating/cooling as a medium transverses through them, and with little pressure drop penalty.
    Type: Application
    Filed: May 5, 2014
    Publication date: November 6, 2014
    Applicant: GCorelab Private, Ltd.
    Inventors: Poh Seng LEE, Liwen JIN, Xin Xian KONG, Wai Shing KUNG, Alan Boon Hong NG, Yi Jing KOAY
  • Publication number: 20140284726
    Abstract: A FinFET device comprises an isolation region in a substrate, wherein the isolation region comprises a plurality of non-vertical sidewalls, a first V-shaped groove, a second V-shaped groove and a third V-shaped groove formed in the substrate, a first cloak-shaped active region over the first V-shaped groove, wherein a top surface of the first cloak-shaped active region comprises a first slope, a second cloak-shaped active region over the second V-shaped groove, wherein a top surface of the second cloak-shaped active region is triangular in shape and a third cloak-shaped active region over the third V-shaped groove, wherein a top surface of the third cloak-shaped active region comprises a second slope.
    Type: Application
    Filed: June 3, 2014
    Publication date: September 25, 2014
    Inventors: Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu, Chih-Hsin Ko
  • Patent number: 8815712
    Abstract: A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region.
    Type: Grant
    Filed: March 7, 2012
    Date of Patent: August 26, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Tien Wan, You-Ru Lin, Yi-Jing Lee, Cheng-Hsien Wu, Chih-Hsin Ko, Clement Hsingjen Wann
  • Publication number: 20140220751
    Abstract: A method includes recessing a portion of a semiconductor substrate between opposite isolation regions to form a recess. After the step of recessing, the portion of the semiconductor substrate includes a top surface. The top surface includes a flat surface, and a slant surface having a (111) surface plane. The slant surface has a bottom edge connected to the flat surface, and a top edge connected to one of the isolation regions. The method further includes performing an epitaxy to grow a semiconductor material in the recess, wherein the semiconductor material is grown from the flat surface and the slant surface, and performing an annealing on the semiconductor material.
    Type: Application
    Filed: March 11, 2013
    Publication date: August 7, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Jing Lee, Cheng-Hsien Wu, Chih-Hsin Ko, Clement Hsingjen Wann
  • Publication number: 20140220753
    Abstract: A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region.
    Type: Application
    Filed: April 14, 2014
    Publication date: August 7, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu, Chih-Hsin Ko
  • Patent number: 8742509
    Abstract: A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region.
    Type: Grant
    Filed: March 1, 2012
    Date of Patent: June 3, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu, Chih-Hsin Ko
  • Publication number: 20130318251
    Abstract: Systems and methods for adaptive multipath content streaming in communication networks are disclosed. In one embodiment, a computer-based system to manage content streaming from a sender to a receiver comprises a processor and logic instructions stored in a tangible computer-readable medium coupled to the processor which, when executed by the processor, configure the processor to split an encoded content stream into a plurality of parallel content streams including a first content stream comprising a base layer and at least a first additional layer, wherein the base layer contains a low-bandwidth content stream and reference information for additional layers and a second content stream comprising the base layer and at least a second additional layer, and a transmitter to transmit at least one of the first content stream or the second content stream from the sender to the receiver based at least in part on an available bandwidth parameter.
    Type: Application
    Filed: May 22, 2012
    Publication date: November 28, 2013
    Inventors: Alimuddin Mohammad, Yi Jing, Robert J. Rencher
  • Publication number: 20130298081
    Abstract: A display method and a portable device are provided. The portable device has a touch screen, and a plurality of application programs is installed in the portable device. The touch screen displays a menu interface and a object corresponding to each application program. When the object corresponding to each application program is displayed, a display format supported by the application program is obtained, and whether the display format supported by the application program matches a first display format of the touch screen of the portable device is determined. When the display format supported by the application program does not match the first display format of the touch screen, a first annotation message is shown on the object corresponding to the application program.
    Type: Application
    Filed: April 2, 2013
    Publication date: November 7, 2013
    Applicant: ASUSTeK COMPUTER INC.
    Inventor: Yi-Jing Chen
  • Patent number: 8543400
    Abstract: Voice processing methods and systems are provided. An utterance is received. The utterance is compared with teaching materials according to at least one matching algorithm to obtain a plurality of matching values corresponding to a plurality of voice units of the utterance. Respective voice units are scored in at least one first scoring item according to the matching values and a personified voice scoring algorithm. The personified voice scoring algorithm is generated according to training utterances corresponding to at least one training sentence in a phonetic-balanced sentence set of a plurality of learners and at least one real teacher, and scores corresponding to the respective voice units of the training utterances of the learners in the first scoring item provided by the real teacher.
    Type: Grant
    Filed: June 6, 2008
    Date of Patent: September 24, 2013
    Assignee: National Taiwan University
    Inventors: Lin-Shan Lee, Che-Kuang Lin, Chia-Lin Chang, Yi-Jing Lin, Yow-Bang Wang, Yun-Huan Lee, Li-Wei Cheng
  • Publication number: 20130240836
    Abstract: A fin field effect transistor (FinFET) device is provided. The FinFET includes a superlattice layer and a strained layer. The superlattice layer is supported by a substrate. The strained layer is disposed on the superlattice layer and provides a gate channel. The gate channel is stressed by the superlattice layer. In an embodiment, the superlattice layer is formed by stacking different silicon germanium alloys or stacking other III-V semiconductor materials.
    Type: Application
    Filed: March 16, 2012
    Publication date: September 19, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu, Chih-Hsin Ko
  • Publication number: 20130228875
    Abstract: A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region.
    Type: Application
    Filed: March 1, 2012
    Publication date: September 5, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Jing Lee, You-Ru Lin, Cheng-Tien Wan, Cheng-Hsien Wu, Chih-Hsin Ko
  • Publication number: 20130171792
    Abstract: A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region.
    Type: Application
    Filed: March 7, 2012
    Publication date: July 4, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Tien Wan, You-Ru Lin, Yi-Jing Lee, Cheng-Hsien Wu, Chih-Hsin Ko, Clement Hsingjen Wann
  • Patent number: 8354940
    Abstract: An automated remote water quality monitoring system with wireless communication capability and the method thereof is provided. A water quality monitoring system is provided, including: a plurality of monitoring apparatuses, each of which has a radio communication module transmitting at least one environmental parameter; a server receiving the at least one environmental parameter via a base station; and a gateway being one selected from a group consisting of the plurality of monitoring apparatuses, being geographically the closest one to the base station, receiving the at least one environmental parameter and transmitting the at least one environmental parameter to the base station.
    Type: Grant
    Filed: April 9, 2010
    Date of Patent: January 15, 2013
    Assignee: National Taiwan University
    Inventors: Joe-Air Jiang, Jyh-Cherng Shieh, En-Cheng Yang, Fu-Ming Lu, Kuo-Chi Liao, Chih-Hung Hung, Tzu-Yun Lai, Jiing-Yi Wang, Chang-Wang Liu, Tzu-Shiang Lin, Chia-Pang Chen, Yi-Jing Chu
  • Patent number: 8288914
    Abstract: A electric motor has a stator and a rotor. The stator comprises a housing and a plurality of magnets fixed to an inner surface of said housing by a frame member. The magnets are embedded in the frame member. A plurality of first grooves are formed in an outside peripheral surface of the frame member, each of said first grooves extending axially from one axial surface of said frame member and having a axial length smaller than the axial height of said frame member. The housing has a plurality of first anchors formed on its inner surface, each of the first anchors engaging with a corresponding one of the first grooves.
    Type: Grant
    Filed: December 22, 2009
    Date of Patent: October 16, 2012
    Assignee: Johnson Electric S.A.
    Inventors: Rui Feng Qin, Xin Hui Guan, Yi Jing
  • Patent number: 8242655
    Abstract: An engine cooling system, comprising a fan unit, cooling pipes and a coolant tank, the coolant tank, the cooling pipes and cooling channels of the engine being connected together and forming a cooling cycle, the fan unit being used to cool the cooling pipes and the coolant therein; wherein the fan unit comprises a motor and fan blades driven by the motor, the motor comprising a stator and a rotor rotatable mounted confronting the stator; the rotor comprising a shaft, a commutator fitted to the shaft, a rotor core fitted to the shaft adjacent to the commutator, windings wound about teeth of the rotor core and electrically connected to segments of the commutator; the windings being wound by aluminum cored wire that has a electrical insulation film around its peripheral surface.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: August 14, 2012
    Assignee: Johnson Electric S.A.
    Inventors: Rui Feng Qin, Yi Jing, Xin Hui Guan, Gianpaolo Arucci
  • Patent number: 8193738
    Abstract: A dimmable light emitting diode (LED) device with low ripple current includes a LED module, a phase dimmer, a voltage converting module, a driving module and a feedback module. The flyback converter of the voltage converting module adds a secondary forward winding connecting to a phase cut-off detector to provide a detecting voltage in proportion to current level of the output current across the LED module.
    Type: Grant
    Filed: August 7, 2009
    Date of Patent: June 5, 2012
    Assignee: Phihong Technology Co., Ltd.
    Inventors: Chung-Jen Chu, Yi-Jing Chen, Hung-Chun Chung
  • Publication number: 20110253982
    Abstract: Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures.
    Type: Application
    Filed: October 28, 2009
    Publication date: October 20, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Deli Wang, Cesare Soci, Xinyu Bao, Wei Wei, Yi Jing, Ke Sun
  • Patent number: 8032544
    Abstract: A method includes receiving a request for information from a relational database, translating the received request to at least one of an object and a relational persistent query, parsing the query to determine one or more of table names, attributes and attribute types, and generating at least one set of related files. The parsing results are used to update at least one configuration file to accept the related files for use by at least one of the object and the relational persistent query service, and execute at least one of the persistent query services based on the translated queries, wherein the persistent query services are programmed to receive the translated query. Based on the execution of the translated query, the results are either fetched from at least one of the object cache or retrieved from at least one of the database, stored, and the results are transmitted to the user.
    Type: Grant
    Filed: September 24, 2008
    Date of Patent: October 4, 2011
    Assignee: The Boeing Company
    Inventors: Yi Jing, Alimuddin Mohammad, John F. Bremer, Jr.