Abstract: A method of orthopedic treatment includes steps of: by using a computer aided design (CAD) tool based on profile data that is related to a to-be-treated part of a bone of a patient, obtaining a model of a preliminary instrument that substantially fits the to-be-treated part; by using the CAD tool, obtaining a model of a patient specific instrument (PSI) based on the model of the preliminary instrument; producing the PSI based on the model of the PSI, the PSI being adjustable; performing medical operation on the to-be-treated part, and then attaching the PSI to the to-be-treated part; after attaching the PSI to the to-be-treated part, adjusting the PSI such that the PSI is adapted to real conditions of the to-be-treated part.

Abstract: The present invention provides a lactic acid bacteria composition, which comprises: a Lactobacillus plantarum PL-02 strain, a Lactobacillus acidophilusTYCA06 strain, a Lactobacillus casei CS-773 strain, and a physiologically acceptable excipient, diluent, or carrier. All of the strains are deposited at the China General Microbiological Culture Collection Center.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: Disclosed herein is a composition including Lactobacillus plantarum TWK10 deposited at the China General Microbiological Culture Collection Center (CGMCC) under accession number CGMCC 13008 for use in treating sarcopenia and for use in maintaining and/or increasing muscle mass and/or strength in an elderly subject.

Abstract: The present invention provides a lactic acid bacteria composition, which comprises: a Lactobacillus plantarum PL-02 strain, a Lactobacillus acidophilusTYCA06 strain, a Lactobacillus casei CS-773 strain, and a physiologically acceptable excipient, diluent, or carrier.

Abstract: Disclosed herein is a composition including Lactobacillus plantarum TWK10 deposited at the China General Microbiological Culture Collection Center (CGMCC) under accession number CGMCC 13008 for use in improving walking capacity of an elderly subject.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: An isolated lactic acid bacteria strain: Bifidobacterium longum subsp. longum OLP-01 strain for increasing exercise performance and ameliorating fatigue is disclosed. A variety of animal experiments have proved that OLP-01 not only effectively improves muscle strength and swimming endurance but also significantly reduces fatigue-related biochemical indicators, including blood lactate, blood urea nitrogen and the activity of creatine kinase.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: Disclosed herein is a composition including Lactobacillus plantarum TWK10 deposited at the China General Microbiological Culture Collection Center (CGMCC) under accession number CGMCC 13008 for use in treating sarcopenia and for use in maintaining and/or increasing muscle mass and/or strength in an elderly subject.

Abstract: An isolated lactic acid bacteria strain: Bifidobacterium longum subsp. longum OLP-01 strain for increasing exercise performance and ameliorating fatigue is disclosed. A variety of animal experiments have proved that OLP-01 not only effectively improves muscle strength and swimming endurance but also significantly reduces fatigue-related biochemical indicators, including blood lactate, blood urea nitrogen and the activity of creatine kinase.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: A FinFET device includes a substrate, a fin formed on the substrate, and a gate electrode crossing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extended toward the substrate. The width of the head portion is greater than that of the tail portion.

Abstract: A FinFET device includes a substrate, a fin formed on the substrate, and a gate electrode crossing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extended toward the substrate. The width of the head portion is greater than that of the tail portion.

Abstract: A FinFET device includes a substrate, a fin formed on the substrate, and a gate electrode crossing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extended toward the substrate. The width of the head portion is greater than that of the tail portion.

Abstract: A FinFET device includes a substrate, a fin formed on the substrate, and a gate electrode crossing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extended toward the substrate. The width of the head portion is greater than that of the tail portion.

Abstract: A FinFET device includes a substrate, a fin formed on the substrate, and a gate electrode crossing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extended toward the substrate. The width of the head portion is greater than that of the tail portion.

Abstract: A semiconductor device and method of manufacturing same are described. A first hafnium oxide (HfO2) layer is formed on a substrate. A titanium (Ti) layer is formed over the first hafnium oxide layer. A second hafnium oxide layer is formed over the titanium layer. The composite device structure is thermally annealed to produce a high-k dielectric structure having a hafnium titanium oxide (HfxTi1-xO2) layer interposed between the first hafnium oxide layer and the second hafnium oxide layer.

Abstract: A semiconductor device and method of manufacturing same are described. A first hafnium oxide (HfO2) layer is formed on a substrate. A titanium (Ti) layer is formed over the first hafnium oxide layer. A second hafnium oxide layer is formed over the titanium layer. The composite device structure is thermally annealed to produce a high-k dielectric structure having a hafnium titanium oxide (HfxTi1-xO2) layer interposed between the first hafnium oxide layer and the second hafnium oxide layer.