Abstract: Disclosed herein is a composition including Lactobacillus plantarum TWK10 deposited at the China General Microbiological Culture Collection Center (CGMCC) under accession number CGMCC 13008 for use in improving walking capacity of an elderly subject.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: The present invention provides a lactic acid bacteria composition, which comprises: a Lactobacillus plantarum PL-02 strain, a Lactobacillus acidophilusTYCA06 strain, a Lactobacillus casei CS-773 strain, and a physiologically acceptable excipient, diluent, or carrier. All of the strains are deposited at the China General Microbiological Culture Collection Center.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: Disclosed herein is a composition including Lactobacillus plantarum TWK10 deposited at the China General Microbiological Culture Collection Center (CGMCC) under accession number CGMCC 13008 for use in treating sarcopenia and for use in maintaining and/or increasing muscle mass and/or strength in an elderly subject.

Abstract: The present invention provides a lactic acid bacteria composition, which comprises: a Lactobacillus plantarum PL-02 strain, a Lactobacillus acidophilusTYCA06 strain, a Lactobacillus casei CS-773 strain, and a physiologically acceptable excipient, diluent, or carrier.

Abstract: Disclosed herein is a composition including Lactobacillus plantarum TWK10 deposited at the China General Microbiological Culture Collection Center (CGMCC) under accession number CGMCC 13008 for use in improving walking capacity of an elderly subject.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: An isolated lactic acid bacteria strain: Bifidobacterium longum subsp. longum OLP-01 strain for increasing exercise performance and ameliorating fatigue is disclosed. A variety of animal experiments have proved that OLP-01 not only effectively improves muscle strength and swimming endurance but also significantly reduces fatigue-related biochemical indicators, including blood lactate, blood urea nitrogen and the activity of creatine kinase.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: Disclosed herein is a composition including Lactobacillus plantarum TWK10 deposited at the China General Microbiological Culture Collection Center (CGMCC) under accession number CGMCC 13008 for use in treating sarcopenia and for use in maintaining and/or increasing muscle mass and/or strength in an elderly subject.

Abstract: An isolated lactic acid bacteria strain: Bifidobacterium longum subsp. longum OLP-01 strain for increasing exercise performance and ameliorating fatigue is disclosed. A variety of animal experiments have proved that OLP-01 not only effectively improves muscle strength and swimming endurance but also significantly reduces fatigue-related biochemical indicators, including blood lactate, blood urea nitrogen and the activity of creatine kinase.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: A FinFET device includes a substrate, a fin formed on the substrate, and a gate electrode crossing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extended toward the substrate. The width of the head portion is greater than that of the tail portion.

Abstract: A FinFET device includes a substrate, a fin formed on the substrate, and a gate electrode crossing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extended toward the substrate. The width of the head portion is greater than that of the tail portion.

Abstract: A FinFET device includes a substrate, a fin formed on the substrate, and a gate electrode crossing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extended toward the substrate. The width of the head portion is greater than that of the tail portion.

Abstract: A FinFET device includes a substrate, a fin formed on the substrate, and a gate electrode crossing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extended toward the substrate. The width of the head portion is greater than that of the tail portion.

Abstract: A FinFET device includes a substrate, a fin formed on the substrate, and a gate electrode crossing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extended toward the substrate. The width of the head portion is greater than that of the tail portion.