Patents by Inventor Yi-Ju Hsu

Yi-Ju Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-K Dielectric and Method of Manufacture
    Publication number: 20170317182
    Abstract: A semiconductor device and method of manufacturing same are described. A first hafnium oxide (HfO2) layer is formed on a substrate. A titanium (Ti) layer is formed over the first hafnium oxide layer. A second hafnium oxide layer is formed over the titanium layer. The composite device structure is thermally annealed to produce a high-k dielectric structure having a hafnium titanium oxide (HfxTi1-xO2) layer interposed between the first hafnium oxide layer and the second hafnium oxide layer.
    Type: Application
    Filed: September 1, 2016
    Publication date: November 2, 2017
    Inventors: I-Chen Huang, Yi-Ju Hsu, Chi-Wen Liu, Kuang-Hsin Chen, Yung-Hsien Wu, Chin-Yu Chen
  • FINFET DEVICE AND FABRICATING METHOD THEREOF
    Publication number: 20170069757
    Abstract: A FinFET device includes a substrate, a fin formed on the substrate, and a gate electrode crossing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extended toward the substrate. The width of the head portion is greater than that of the tail portion.
    Type: Application
    Filed: January 12, 2016
    Publication date: March 9, 2017
    Inventors: Yen-Ming Peng, Chi-Wen Liu, Hsin-Chieh Huang, Yi-Ju Hsu, Horng-Huei Tseng