Abstract: Various solutions for power saving for New Radio (NR) carrier aggregation in mobile communications are described. An apparatus receives, from a wireless network, a trigger signal. The apparatus switches between a first bandwidth part (BWP) and a second BWP of at least two BWPs for a secondary cell (SCell) in response to receiving the trigger signal. No physical downlink control channel (PDCCH) monitoring is configured for the first BWP while PDCCH monitoring is configured for the second BWP.

Abstract: An optical subassembly includes a receptacle, a ferrule and a ferrule fastening component. The ferrule and the ferrule fastening component are connected with the receptacle. The ferrule fastening component includes a fastening portion and a blocking portion connected with each other. The fastening portion is fastened with the receptacle, and the blocking portion touches the ferrule.

Abstract: Techniques for use in a wireless device are provided. The techniques include monitoring a status of an amount of data in at least one buffer for transmission; determining an indication of additional capacity for transmission; transmitting at least one signal with an indication based on the monitored buffer status and the indication of additional capacity for transmission; and transmitting data of the at least one buffer based on the transmitted at least one signal.

Abstract: An SEM image is acquired. The SEM image shows a metal line and a via hole disposed above the metal line. The via hole exposes a portion of the metal line vertically aligned with the via hole. A first portion and a second portion of the via hole are each vertically not aligned with the metal line and are disposed on opposite sides of the metal line. The acquired SEM image is processed to enhance a contrast between the first and second portions and their surrounding areas. A first dimension of the first portion and a second dimension of the second portion of the via hole are measured in a first direction. The first direction is different from a second direction along which the metal line extends. An overlay between the via hole and the metal line is determined based on the first dimension and the second dimension.

Abstract: The current disclosure is directed towards systems and methods for automatically distributing an event comprising a plurality of key-value pairs, to a plurality of event subscribers, based on the plurality of key-value pairs satisfying one or more Boolean filters uniquely corresponding to one or more of the event subscribers, which may enable an increase in event distribution efficiency. In one example, this may increase event distribution efficiency by enabling a reduction in data exposure, as an event subscriber may receive only those events which satisfy a Boolean filter defined by the subscriber, and registered with the event conduit, and therefore, broadcast of events to uninterested subscribers may be reduced. Subscribers may specify interest in as broad, or as narrow a range of events as they wish, and thereby a more efficient match between subscriber interest and which events are distributed to that user may be enabled.

Abstract: A memory storage device is fabricated using a semiconductor fabrication process. Often times, manufacturing variations and/or misalignment tolerances present within the semiconductor fabrication process can cause the memory storage device to differ from other memory storage devices similarly designed and fabricated by the semiconductor fabrication process. For example, uncontrollable random physical processes in the semiconductor fabrication process can cause small differences, such as differences in doping concentrations, oxide thicknesses, channel lengths, structural widths, and/or parasitics to provide some examples, between these memory storage devices. These small differences can cause bitlines within the memory storage device to be physically unique with no two bitlines being identical. As a result, the uncontrollable random physical processes in the semiconductor fabrication process can cause electronic data read from the memory storage device to propagate along the bitlines at different rates.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a gate stack formed over a semiconductor substrate, a source/drain contact structure adjacent to the gate stack, and a gate spacer formed between the gate stack and the source/drain contact structure. The semiconductor device structure also includes a first insulating capping feature covering an upper surface of the gate stack, a second insulating capping feature covering an upper surface of the source/drain contact structure, and an insulating layer covering the upper surfaces of the first insulating capping feature and the second insulating capping feature. The second insulating capping feature includes a material that is different from a material of the first insulating capping feature. The semiconductor device structure also includes a via structure passing through the insulating layer and the first insulating capping feature and electrically connected to the gate stack.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: A source/drain region is disposed in a substrate. A gate structure is disposed over the substrate. A gate spacer is disposed on a sidewall of the gate structure. The gate spacer and the gate structure have substantially similar heights. A via is disposed over and electrically coupled to: the source/drain region or the gate structure. A mask layer is disposed over the gate spacer. The mask layer has a greater dielectric constant than the gate spacer. A first side of the mask layer is disposed adjacent to the via. A dielectric layer is disposed on a second side of the mask layer, wherein the mask layer is disposed between the dielectric layer and the via.

Abstract: A system and method which improve the performance of a wireless transmission system by intelligent use of the control of the flow of data between a radio network controller (RNC) and a Node B. The system monitors certain criteria and, if necessary, adaptively increases or decreases the data flow between the RNC and the Node B. This improves the performance of the transmission system by allowing retransmitted data, signaling procedures and other data to be successfully received at a faster rate, by minimizing the amount of data buffered in the Node B. Flow control is exerted to reduce buffering in the Node B upon degradation of channel qualities, and prior to a High Speed Downlink Shared Channel (HS-DSCH) handover.

Abstract: An antibody-drug conjugate (ADC) of formula (I) or a pharmaceutically acceptable salt or solvate thereof is provided. In formula (I), p is an integer ranging from 1 to 26, A is an antibody, and -(L-D) is a linker-drug unit. L is a linker unit having a glycopeptide, and D is a drug unit. The antibody is conjugated to the linker unit through a cysteine residue of the antibody. A method for forming an antibody-drug conjugate (ADC) is also provided.

Abstract: Provided herein are methods and devices for the detection of analytes. The methods employ particles formed from a first metal conjugated to analytes. The analyte conjugated to the particle formed from the first metal can be accumulated at a working electrode. The first metal can be galvanically exchanged with ions of a second metal to form a layer of the first metal at the working electrode. The first metal can then be electrochemically detected and/or quantified. Using this method, analytes can be detected at low concentrations a few femtomolar via anodic stripping voltammetry, with no washing steps or electrode modifications.

Abstract: A method of downlink control information (DCI) transmission is proposed to enhance DCI transmission efficiency over physical layer signaling in cellular mobile communication networks. A serving base station uses a higher layer signaling, e.g., radio resource control (RRC) signaling message to configure a plurality of user equipments (UEs) to monitor UE-group DCI. When the UE is configured to monitor UE-group DCI, the UE monitors both unicast DCI and UE-group DCI in each corresponding scheduling time unit, e.g., a subframe in LTE. The candidate positions of the unicast DCI and the UE-group DCI can be orthogonal, partially overlapping, or fully overlapping with each other.

Abstract: An SEM image is acquired. The SEM image shows a metal line and a via hole disposed above the metal line. The via hole exposes a portion of the metal line vertically aligned with the via hole. A first portion and a second portion of the via hole are each vertically not aligned with the metal line and are disposed on opposite sides of the metal line. The acquired SEM image is processed to enhance a contrast between the first and second portions and their surrounding areas. A first dimension of the first portion and a second dimension of the second portion of the via hole are measured in a first direction. The first direction is different from a second direction along which the metal line extends. An overlay between the via hole and the metal line is determined based on the first dimension and the second dimension.

Abstract: A memory storage device is fabricated using a semiconductor fabrication process. Often times, manufacturing variations and/or misalignment tolerances present within the semiconductor fabrication process can cause the memory storage device to differ from other memory storage devices similarly designed and fabricated by the semiconductor fabrication process. For example, uncontrollable random physical processes in the semiconductor fabrication process can cause small differences, such as differences in doping concentrations, oxide thicknesses, channel lengths, structural widths, and/or parasitics to provide some examples, between these memory storage devices. These small differences can cause bitlines within the memory storage device to be physically unique with no two bitlines being identical. As a result, the uncontrollable random physical processes in the semiconductor fabrication process can cause electronic data read from the memory storage device to propagate along the bitlines at different rates.

Abstract: A method for establishing a computer-aided data interpretation model for immune diseases by immunomarkers and visualization is revealed. First combine a plurality of immunomarkers into an immunomarker panel. Then collect test data of a plurality of subjects measured by the immunomarker panel, and disease diagnosis information of the subjects for establishment of an immunomarker-panel testing database. Next new subjects are tested by the immunomarker panel. The data obtained and the corresponding information in the immunomarker-panel testing database are processed by unsupervised machine learning algorithm to get a computer-aided data interpretation model showing comparison of case distribution patterns. The method provides real-time analysis of multiple data to medical professionals for their reference. Thereby the correctness, the timeliness and the reproducibility of the interpretation result for the diagnosis and treatment of immune diseases are all improved.

Abstract: A method for normalizing blood vessels of lesions is disclosed, which includes administering an effective amount of oxygen-loaded microbubbles to a subject in need by intravenous injection, and projecting ultrasound from a ultrasonic emission device into the lesions for rupturing the oxygen-loaded microbubbles and releasing the oxygen to the lesions. Each of the oxygen-loaded microbubbles comprises oxygen and a water insoluble gas, and the particle size of microbubbles is 0.5˜20 ?m.

Abstract: A method of two-stage scheduling in downlink control channel is proposed to enhance downlink control information (DCI) forward compatibility and hardware flexibility. The DCI comprises a basic DCI and an extended DCI. The basic DCI provides basic scheduling information of the scheduled data. The extended DCI provides extended scheduling information of the scheduled data channel. The basic DCI can be unicast to a single UE over UE-specific search space. The basic DCI can also be broadcast or multicast to a group of UEs over common search space. UE performs blind detection of the basic DCI only, while the location and size of the extended DCI can be provided by the basic DCI or provided by a higher layer signaling. Cross-slot/subframe and Multi-slot/subframe scheduling can also be applied in the two-stage scheduling.

Abstract: An electronic device includes a first body, a second body, a function element, and a coupling assembly. The first body has a first sleeve. The second body has a second sleeve. The function element is disposed on the first body and the second body, and two ends of the function element are respectively disposed through the first sleeve and the second sleeve. The coupling assembly is detachably connected to the function element and disposed on the first sleeve or the second sleeve. Specifically, the first body and the second body are adapted to be opened or closed relatively through the function element and the coupling assembly, and the function element is adapted to be separated from the first sleeve and the second sleeve along an axial direction.

Abstract: Methods of enabling multiuser superposition transmission (MUST) in LTE systems are proposed. MUST operation allows simultaneous transmission for multiple co-channel users on the same time-frequency resources. A higher-layer signaling is used for configuring a UE to enable MUST in each transmission mode (TM). MUST is a sub-TM of each TM. When a UE is configured by higher layer to enable MUST, the UE will monitor new DCI formats supported by the configured TM with new fields carrying scheduling information of another co-channel UE. Dynamic switching between MUST and non-MUST operation is allowed. Mixed transmission schemes and precoders among co-channel UEs are also supported.