Abstract: A light-emitting diode and a manufacturing method thereof are provided. The manufacturing method includes following steps. First, an LED wafer is provided. The LED wafer includes a substrate and a light-emitting semiconductor stacking structure positioned on the surface of the substrate. The light-emitting semiconductor stacking structure includes a first type semiconductor layer, an active layer, and a second type semiconductor layer from a side of the substrate. Second, dicing lanes are defined on the upper surface of the LED wafer. Third, dicing is performed along the dicing lanes of the substrate using a laser. The laser is focused on the lower surface of the substrate to form a surface hole and focused inside the substrate to form an internal hole. The diameter of the surface hole is greater than the diameter of the internal hole. Fourth, the LED wafer is separated into LED chips along the dicing lanes.

Abstract: A system and method for maximizing bandwidth in an uplink for a 5G communication system is disclosed. Multiple end devices generate image streams. A gateway is coupled to the end devices. The gateway includes a gateway monitor agent collecting utilization rate data of the gateway and an image inspector collecting inspection data from the received image streams. An edge server is coupled to the gateway. The edge server includes an edge server monitor agent collecting utilization rate data of the edge server. An analytics manager is coupled to the gateway and the edge server. The analytics manager is configured to determine an allocation strategy based on the collected utilization rate data from the gateway and the edge server.

Abstract: A light-emitting device includes a substrate, a semiconductor structure, and an insulating reflective layer. The substrate has an upper surface and a lower surface. The semiconductor structure is disposed on the upper surface of the substrate. A projection of the semiconductor structure on the upper surface of the substrate has an outer periphery spaced apart a distance from an outer periphery of the upper surface of the substrate. The insulating reflective layer covers at least a part of the semiconductor structure and has an extending portion extending outwardly from the semiconductor structure and covering a part of the upper surface of the substrate. A peripheral end of the extending portion of the insulating reflective layer has an inclined lateral surface, and an included angle defined between the inclined lateral surface and the upper surface of the substrate is not less than 60°.

Abstract: A light-emitting device includes a substrate and a semiconductor light-emitting stack. The substrate includes an upper surface, a first side surface, and a second side surface adjacent to the first side surface. The semiconductor light-emitting stack includes a first conductivity type semiconductor layer, a light-emitting layer, and a second conductivity type semiconductor layer that are sequentially disposed on the upper surface of the substrate in such order. The first side surface includes X number of first laser inscribed marks, and the second side surface includes Y number of second laser inscribed marks, in which Y>X>0 and Y?3. A method for manufacturing the light-emitting device is also provided herein.

Abstract: A light-emitting diode (LED) chip includes a semiconductor epitaxial structure and a reflective structure. The reflective structure is formed on an upper surface and side surfaces of the semiconductor epitaxial structure. The reflective structure has a reflectance of less than 30% for light having a first wavelength which is different from a wavelength of light emitted from the semiconductor epitaxial structure. A semiconductor light-emitting device including the LED chip, and a display device including a plurality of the LED chips are also disclosed.

Abstract: A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaXIn(1-x)AsY1P(1-Y), 0<X<1 and 0<Y?0.05, and the barrier layer has a component formula of (AlaGa1-A)bIn(1-b)P, 0.3?a?1 and 0<b<1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.

Abstract: A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaXIn(1-X)AsY1P(1-Y), 0<X<1 and 0<Y?0.05, and the barrier layer has a component formula of (AlaGa1-A)bIn(1-b)P, 0.3?a?1 and 0<b<1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.

Abstract: A fabrication method for a light emitting diode (LED), including: 1) mounting a LED chip on a substrate; 2) mounting a screen printing template on the LED chip; 3) coating a silicone gel layer over the surface of the screen printing template; 4) printing the phosphor: printing the phosphor over the chip surface via silk screen printing process and recycling the excess phosphor; and 5) removing the screen printing template and baking the phosphor for curing, and coating the cured phosphor over the chip surface. In the packaging method of the present disclosure, the unused phosphor can be recycled because it is not polluted by the screen printing template material.

Abstract: An epitaxial wafer for plant lighting light-emitting diodes (LED), the epitaxial wafer includes: a growth substrate; a first red-light epitaxial laminated layer; a distributed Bragg reflector (DBR) semiconductor laminated layer; and a second red-light epitaxial laminated layer; wherein: the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer, and a second P-type ohmic contact layer.

Abstract: An electrode material includes a fine-array porous material. The fine-array porous material includes a plurality of pores having a substantially uniform size of <1000 ?m, with a variation of <20%, and comprises a metal such as Ni, Al, Ti, Sn and Mn. The metal fine-array porous electrode material can be surface-treated to form a metal oxide on the surface of the porous electrode material, or be coated with a metal oxide including RuO2, TaO. An electrical energy storage apparatus, such as a supercapacitor or a lithium battery, containing the fine-array porous electrode material can have significantly improved performances as compared with conventional materials.

Abstract: A super-fine bubble generation apparatus includes a fine-array porous membrane and a device for generating substantially uniform, super-fine gas bubbles in a liquid. The fine-array porous membrane includes a plurality of pores having a substantially uniform size of <100 ?m, with a variation of <20%. The super-fine gas bubbles generated by this apparatus can have a size of 50 nm-50000 nm, with a substantially uniform distribution with variations <20%. Applications of such super-fine bubble generation apparatus can include a skin cleansing device, or a teeth-cleaning device.

Abstract: An apparatus including a fine-array porous material with a specific surface area higher than 10/mm, the specific surface area depending on different pore sizes, wherein the porous material comprises a plurality of pores having a substantially uniform size with a variation of less than about 20%, wherein the size is larger than about 100 nm and smaller than about 10 cm. The high-buoyancy apparatus can be part of a water vehicle such as a boat or a submarine, and the fine-array porous material is configured to reduce friction and/or control buoyancy. A conduit is also provided employing a fine-array porous material to reduce friction and/or control buoyancy. A garment is provided taking advantage of water repellant and/or UV/IR reflection properties of the fine-array porous material.

Abstract: An epitaxial wafer for plant lighting light-emitting diodes (LED), the epitaxial wafer includes: a growth substrate; a first red-light epitaxial laminated layer; a distributed Bragg reflector (DBR) semiconductor laminated layer; and a second red-light epitaxial laminated layer; wherein: the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer, and a second P-type ohmic contact layer.

Abstract: A light-emitting diode (LED) for plant illumination includes a substrate, and a PN-junction light-emitting portion over the substrate. The light-emitting portion has a strained light-emitting layer with a component formula of GaXIn(1-X)AsYP(1-Y) (0<X<1 and 0<Y<1), and a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer.

Abstract: This disclosure discloses an illumination apparatus. The illumination apparatus comprises a cover comprising a second portion and a first portion, and a light source disposed within the cover. An average thickness of the first portion is greater than that of the second portion.

Abstract: A photocatalyst apparatus includes a carrier and a photocatalyst carried by the carrier. The carrier is a porous material with a specific surface area higher than 10/mm, the specific surface area depending on different pore sizes, wherein the porous material includes a plurality of pores having a substantially uniform size with a variation of less than about 20%, wherein the size is larger than about 100 nm and smaller than about 5 mm. The photocatalyst apparatus can be used for lighting, anti bacteria, deodorant, air or water purification, etc.

Abstract: An electrode material includes a fine-array porous material. The fine-array porous material includes a plurality of pores having a substantially uniform size of <1000 ?m, with a variation of <20%, and comprises a metal such as Ni, Al, Ti, Sn and Mn. The metal fine-array porous electrode material can be surface-treated to form a metal oxide on the surface of the porous electrode material, or be coated with a metal oxide including RuO2, TaO. An electrical energy storage apparatus, such as a supercapacitor or a lithium battery, containing the fine-array porous electrode material can have significantly improved performances as compared with conventional materials.

Abstract: A super-fine bubble generation apparatus includes a fine-array porous membrane and a device for generating substantially uniform, super-fine gas bubbles in a liquid. The fine-array porous membrane includes a plurality of pores having a substantially uniform size of <100 ?m, with a variation of <20%. The super-fine gas bubbles generated by this apparatus can have a size of 50 nm-50000 nm, with a substantially uniform distribution with variations <20%. Applications of such super-fine bubble generation apparatus can include a skin cleansing device, or a teeth-cleaning device.

Abstract: A light-emitting diode (LED) for plant illumination includes a substrate, and a PN-junction light-emitting portion over the substrate. The light-emitting portion has a strained light-emitting layer with a component formula of GaXIn(1-X)AsYP(1-Y) (0<X<1 and 0<Y<1), and a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer.

Abstract: An apparatus including a fine-array porous material with a specific surface area higher than 10/mm, the specific surface area depending on different pore sizes, wherein the porous material comprises a plurality of pores having a substantially uniform size with a variation of less than about 20%, wherein the size is larger than about 100 nm and smaller than about 10 cm. The high-buoyancy apparatus can be part of a water vehicle such as a boat or a submarine, and the fine-array porous material is configured to reduce friction and/or control buoyancy. A conduit is also provided employing a fine-array porous material to reduce friction and/or control buoyancy. A garment is provided taking advantage of water repellant and/or UV/IR reflection properties of the fine-array porous material.