Abstract: An electronic package is provided and includes a substrate structure, an electronic element disposed on the substrate structure and an encapsulation layer encapsulating the electronic element, where at least one functional circuit is formed on a surface of a substrate body of the substrate structure, and a wire having a smaller width is arranged on a boundary line at a junction between an encapsulation area and a peripheral area, so that when a mold for forming the encapsulation layer is formed to cover the substrate structure, the mold will create a gap around the wire to serve as an exhaust passage. Therefore, when the encapsulation layer is formed, the exhaust passage can be used to exhaust air, so as to avoid problems such as the occurrence of voids or overflows of the encapsulation layer.

Abstract: A substrate structure is provided, in which an insulating protection layer is formed on a substrate body having a plurality of electrical contact pads, and the insulating protection layer has a plurality of openings corresponding to the plurality of exposed electrical contact pads, and the insulating protection layer is formed with a hollow portion surrounding a partial edge of at least one of the electrical contact pads at at least one of the openings, so as to reduce the barrier of the insulating protection layer.

Abstract: A substrate structure is provided, in which an insulating protection layer is formed on a substrate body having a plurality of electrical contact pads, and the insulating protection layer has a plurality of openings corresponding to the plurality of exposed electrical contact pads, and the insulating protection layer is formed with a hollow portion surrounding a partial edge of at least one of the electrical contact pads at at least one of the openings, so as to reduce the barrier of the insulating protection layer.

Abstract: An imprint method includes the following steps. A first resist layer is formed on a first substrate. A first imprinting step using a first mold is performed to the first resist layer. A first etching process is performed to the first substrate with the first resist layer as an etching mask after the first imprinting step so as to form a first recess pattern in the first substrate. A second resist layer is formed on the first substrate. A second imprinting step using a second mold is performed to the second resist layer. A second etching process is performed to the first substrate with the second resist layer as an etching mask after the second imprinting step so as to form second recess patterns in the first substrate. A depth of the first recess pattern is greater than a depth of each of the second recess patterns.

Abstract: A semiconductor package includes a first die structure, a first redistribution structure that is disposed on the first die structure, a second die structure that is disposed on the first redistribution structure, and a second redistribution structure that is disposed on the second die structure. The first die structure includes an interposer, and the interposer includes a semiconductor substrate and through-vias that penetrate through the semiconductor substrate. A first integrated circuit die is disposed in the semiconductor substrate of the interposer. The second die structure includes a second integrated circuit die that is encapsulated in an encapsulant and several conductive pillars that penetrate through the encapsulant. The first integrated circuit die is electrically connected to the second integrated circuit die through the first redistribution structure, the conductive pillars, and the second redistribution structure.

Abstract: A semiconductor package structure includes a first redistribution layer, a first semiconductor die, a second semiconductor die, a bridge structure, and a plurality of conductive bumps. The first semiconductor die and the second semiconductor die are disposed over the first redistribution layer. The bridge structure is disposed under the first redistribution layer. The first semiconductor die is electrically coupled to the second semiconductor die through the first redistribution layer and the bridge structure. The conductive bumps are disposed under the first redistribution layer and are coupled to the first redistribution layer. The bridge structure is disposed between at least two of the conductive bumps.

Abstract: A semiconductor package structure includes a substrate, a bridge structure, a redistribution layer, a first semiconductor component, and a second semiconductor component. The substrate has a wiring structure. The bridge structure is over the substrate. The redistribution layer is over the bridge structure. The first semiconductor component and the second semiconductor component are over the redistribution layer, wherein the first semiconductor component is electrically coupled to the second semiconductor component through the redistribution layer and the bridge structure.

Abstract: A hierarchical artificial intelligence (AI) computing system includes at least one group of a first layer AI subsystems and n second layer AI subsystems. One of the at least one group of a first layer AI subsystems includes m first layer AI subsystems, and each of the m first layer AI subsystems is configured to perform inference based on internal sensing data or a first external sensing data to generate a first inference result; and the n second layer AI subsystems are respectively connected to the at least one group of the first layer AI subsystems, where each of the n second layer AI subsystems is configured to perform inference based on m first inference results, an operation command, and a second external sensing data to generate a second inference result.

Abstract: A substrate structure is provided, in which an insulating protection layer is formed on a substrate body having a plurality of electrical contact pads, and the insulating protection layer has a plurality of openings corresponding to the plurality of exposed electrical contact pads, and the insulating protection layer is formed with a hollow portion surrounding a partial edge of at least one of the electrical contact pads at at least one of the openings, so as to reduce the barrier of the insulating protection layer.

Abstract: A semiconductor package structure includes a substrate, a redistribution layer, a first semiconductor component, a conductive pillar, and a second semiconductor component. The redistribution layer is over the substrate. The first semiconductor component is over the redistribution layer. The conductive pillar is adjacent to the first semiconductor component, wherein the first semiconductor component and the conductive pillar are surrounded by a molding material. The second semiconductor component is over the molding material, wherein the second semiconductor component is electrically coupled to the redistribution layer through the conductive pillar.

Abstract: A semiconductor package structure includes a substrate, a dummy conductive mesh structure, an interposer, an underfill material, and a semiconductor die. The substrate includes a wiring structure in dielectric layers. The dummy conductive mesh structure is embedded in the substrate and is spaced apart from the wiring structure by the dielectric layers. The interposer is disposed over the substrate. The underfill material extends between the substrate and the interposer and over the dummy conductive mesh structure. The semiconductor die is disposed over the interposer and is electrically coupled to the wiring structure through the interposer.

Abstract: An image brightness adjusting method, comprising: (a) computing or predicting a first input frame rate according to at least one first input image; (b) generating a first brightness according to a first brightness curve and the first input frame rate, wherein the first brightness curve corresponds to a first frame rate; (c) generating a second brightness according to a second brightness curve and the first input frame rate, wherein the second brightness curve corresponds to a second frame rate; (d) generating a first brightness compensating curve according to the first input frame rate and a brightness difference between the first brightness and the second brightness; and (e) setting a first compensating brightness of at least one second input image according to the first brightness compensating curve.

Abstract: A semiconductor package structure includes a first redistribution layer, a second redistribution layer, a first semiconductor die, a second semiconductor die, an adhesive layer, and a molding material. The second redistribution layer is disposed over the first redistribution layer. The first semiconductor die and the second semiconductor die are stacked vertically between the first redistribution layer and the second redistribution layer. The first semiconductor die is electrically coupled to the first redistribution layer, and the second semiconductor die is electrically coupled to the second redistribution layer. The adhesive layer extends between the first semiconductor die and the second semiconductor die. The molding material surrounds the first semiconductor die, the adhesive layer, and the second semiconductor die.

Abstract: A semiconductor chip package includes a substrate having a top surface and a bottom surface, and a semiconductor device mounted on the top surface of the substrate. A gap is provided between the semiconductor device and the top surface of the substrate. A multi-layer laminate epoxy sheet is disposed on the top surface of the substrate and around a perimeter of the semiconductor device.

Abstract: A semiconductor package includes an interposer over a substrate that includes interconnect traces, a redistribution structure on the interposer, a first semiconductor structure, a second semiconductor structure and a third semiconductor structure on the redistribution structure. The first semiconductor structure includes a first semiconductor die and a first encapsulant that encapsulates the first semiconductor die. The second semiconductor structure includes a second semiconductor die and a second encapsulant that encapsulates the second semiconductor die. The third semiconductor structure is disposed adjacent to a corner or an edge of the substrate in a top plan view of the substrate. The third semiconductor structure includes a third semiconductor die and a third encapsulant that encapsulates the third semiconductor die. The third semiconductor structure is electrically insulated from the substrate, the first semiconductor structure and the second semiconductor structure.

Abstract: A semiconductor package structure includes a substrate, a redistribution layer, a first semiconductor component, a conductive pillar, and a second semiconductor component. The redistribution layer is over the substrate. The first semiconductor component is over the redistribution layer. The conductive pillar is adjacent to the first semiconductor component, wherein the first semiconductor component and the conductive pillar are surrounded by a molding material. The second semiconductor component is over the molding material, wherein the second semiconductor component is electrically coupled to the redistribution layer through the conductive pillar.

Abstract: An imprint method includes the following steps. A first resist layer is formed on a first substrate. A first imprinting step using a first mold is performed to the first resist layer. A first etching process is performed to the first substrate with the first resist layer as an etching mask after the first imprinting step so as to form a first recess pattern in the first substrate. A second resist layer is formed on the first substrate. A second imprinting step using a second mold is performed to the second resist layer. A second etching process is performed to the first substrate with the second resist layer as an etching mask after the second imprinting step so as to form second recess patterns in the first substrate. A depth of the first recess pattern is greater than a depth of each of the second recess patterns.

Abstract: An electronic package is provided and includes a substrate structure, an electronic element disposed on the substrate structure and an encapsulation layer encapsulating the electronic element, where at least one functional circuit is formed on a surface of a substrate body of the substrate structure, and a wire having a smaller width is arranged on a boundary line at a junction between an encapsulation area and a peripheral area, so that when a mold for forming the encapsulation layer is formed to cover the substrate structure, the mold will create a gap around the wire to serve as an exhaust passage. Therefore, when the encapsulation layer is formed, the exhaust passage can be used to exhaust air, so as to avoid problems such as the occurrence of voids or overflows of the encapsulation layer.

Abstract: An electronic package is provided and includes a substrate structure and an electronic element disposed on the substrate structure. The substrate structure is provided with a plurality of circuits and a reinforcing portion that is free from being electrically connected to the plurality of circuits on a surface of a substrate body of the substrate structure, such that the electronic element is electrically connected to the plurality of circuits and is free from being electrically connected to the reinforcing portion, and the reinforcing portion includes a dummy pad and a trace line connected to the dummy pad to increase a layout area of the reinforcing portion on the substrate body. Therefore, the adhesion of the reinforcing portion can be improved, and the electronic element can be prevented from cracking.

Abstract: A semiconductor package structure includes a substrate, a first redistribution layer, a second redistribution layer, a bridge structure, a first semiconductor component, and a second semiconductor component. The first redistribution layer is over the substrate. The second redistribution layer is over the first redistribution layer. The bridge structure is between the first redistribution layer and the second redistribution layer, wherein the bridge structure includes an active device. The first semiconductor component and the second semiconductor component are located over the second redistribution layer, wherein the first semiconductor component is electrically coupled to the second semiconductor component through the second redistribution layer and the bridge structure.