Abstract: Programmable impedance elements structures, devices and methods are disclosed. Methods can include: forming a first electrode layer within an electrode opening that extends through a cap layer; planarizing to expose a top of the cap layer; cleaning the exposed top surface of the cap layer to remove residual species from previous process steps. Additional methods can include forming at least a base ion conductor layer having an active metal formed therein that may ion conduct within the ion conductor layer; and forming an inhibitor material that mitigates agglomeration of the active metal within the base ion conductor layer as compared to the active metal alone. Programmable impedance elements and/or devices can have switching material and electrodes parallel to both bottoms and sides of a cell opening formed in a cell dielectric. Other embodiments can include an ion conductor layer having an alloy of an active metal, or two ion conductor layers in contact with an active electrode.

Abstract: A memory device can include a plurality of memory cells formed over a substrate, each memory cell including a tunnel access device that enables current flow in at least one direction predominantly due to tunneling, and a storage element programmable between different impedance states by a reduction-oxidation reaction within at least one memory layer formed between two electrodes; wherein the tunneling access device and programmable impedance element are vertically stacked over one another.

Abstract: A bug zapper including a body, a fan and a light source is disclosed. The body has a compartment, an opening, a channel arranged between the compartment and the opening, and a coupling portion arranged between the compartment and the channel. The channel is formed by an enclosed reflection wall and gradually expands from the coupling portion towards the opening. The fan is coupled with the coupling portion. The light source is mounted on a location of the body adjacent to the fan and irradiates light in the channel. As such, the efficiency in attracting the mosquitoes is outstanding and the negative effect to the human is reduced.

Abstract: In one embodiment of the present invention, a resistive switching device includes a first electrode disposed over a substrate and coupled to a first potential node, a switching layer disposed over the first electrode, a conductive amorphous layer disposed over the switching layer, and a second electrode disposed on the conductive amorphous layer and coupled to a second potential node.

Abstract: A method of forming a conductive bridging memory cell can include forming an active electrode layer above a barrier layer formed on a lower conductive layer; forming at least one ion conductor layer over an active electrode layer; incorporating conductive ions into the ion conductor layer to create a switch memory layer that changes impedance in response to an electric field; and the active electrode layer is a source of conductive ions for the ion conductor, and the barrier layer substantially prevents a movement of conductive ions therethrough.

Abstract: A frame includes a frame body, a control unit, a first connector, a battery module and a second connector. The frame body has a receiving space formed therein, a first tube and a second tube. The first tube is combined with the second tube at a conjunction. An installed space is defined between the first tube and the second tube. An opening is formed on the conjunction, and the receiving space communicates with the installed space through the opening. The control unit is disposed within the receiving space. The first connector is disposed in the opening and coupled to the control unit. The battery module is detachably installed in the installed space. The second connector is disposed on the battery module and for engaging with the first connector when the battery module is installed in the installed space.

Abstract: A memory element can include a first electrode comprising at least a first element; a second electrode formed of a conductive material; and a memory layer comprising a memory material programmable between different resistance states. The first element can be ion conductible within the memory material. A second electrode can include an interface layer in contact with the memory layer. The interface layer being formed by inclusion of at least one modifier element not present in a remainder of the second electrode and not ion conductible within the memory material.

Abstract: A frame includes a frame body, a control unit, a first connector, a battery module and a second connector. The frame body has a receiving space formed therein, a first tube and a second tube. The first tube is combined with the second tube at a conjunction. An installed space is defined between the first tube and the second tube. An opening is formed on the conjunction, and the receiving space communicates with the installed space through the opening. The control unit is disposed within the receiving space. The first connector is disposed in the opening and coupled to the control unit. The battery module is detachably installed in the installed space. The second connector is disposed on the battery module and for engaging with the first connector when the battery module is installed in the installed space.

Abstract: An utterance is received from a user specifying a location attribute and a landmark. A set of candidate locations is identified based on the specified location attribute, and a confidence score can be determined for each candidate location. A set of landmarks is identified based on the specified landmark, and confidence scores can be determined for the landmarks. An associated kernel model is generated for each landmark. Each kernel model is centered at the location of the associated landmark on a map, and the amplitude of the kernel model can be based on landmark attributes, landmark confidence scores, characteristics of the user, and the like. The candidate locations are ranked based on the amplitudes of overlapping kernel models at the candidate locations, and can also be ranked based on confidence scores associated with the candidate locations. A candidate location is selected and presented to the user based on the candidate location ranking.

Abstract: A seat pad is provided. The seat pad includes a base plate, a middle plate, a foam layer, a cushion member, a fixation plate and a fixation screw. The fixation plate is disposed correspondingly above a middle region of the middle plate, the middle plate is disposed on the cushion member, the cushion member is disposed on the base plate, the fixation screw is disposed through a through hole of the base plate at a middle region of the base plate and screwed with the fixation plate, and the foam layer is attached on the middle plate. Whereby, the seat pad is simple in structure and easy to assemble and can obviate pressure of one's hips, and one's blood circulation will not be hindered and uncomfortableness due to sitting for a long time can be obviated.

Abstract: A seat pad is provided. The seat pad includes a base plate, a meddle plate, a foam layer, a cushion member, a fixation plate and a fixation screw. The fixation plate is disposed correspondingly above a meddle region of the meddle plate, the meddle plate is disposed on the cushion member, the cushion member is disposed on the base plate, the fixation screw is disposed through a through hole of the base plate at a meddle region of the base plate and screwed with the fixation plate, and the foam layer is attached on the meddle plate. Whereby, the seat pad is simple in structure and easy to assemble and can obviate pressure of one's hips, and one's blood circulation will not be hindered and uncomfortableness due to sitting for a long time can be obviated.

Abstract: A hot oxygen nozzle and uses thereof in a gasifier, the hot oxygen nozzle comprising an outer-ring spout, a middle-ring spout, an inner-ring spout, and a central spout all sequentially and coaxially disposed, and a cooling system; the gasifier is an entrained-flow gasifier provided with one or more nozzles on a certain plane or a plurality of planes at the top or on the periphery of the gasifier body. The nozzle has a simple structure and is easy to make and maintain. A fuel gas passage is disposed inside the nozzle. Oxygen can be heated by the combustion of fuel gas; and high-temperature and high-speed oxygen can directly ignite carbonaceous materials such as coal water slurry and coke oven gas. The present invention can be applied in a gasifier and then in the final process of synthesis gas preparation.

Abstract: A memory element can include a first electrode; a second electrode; and a memory material programmable between different resistance states, the memory material disposed between the first electrode and the second electrode and comprising a solid electrolyte with at least one modifier element formed therein; wherein the first electrode is an anode electrode that includes an anode element that is ion conductible in the solid electrolyte, the anode element being different than the modifier element.

Abstract: A method, in one embodiment, can include forming a tunnel oxide layer on a substrate. In addition, the method can include depositing via atomic layer deposition a first layer of silicon nitride over the tunnel oxide layer. Note that the first layer of silicon nitride includes a first silicon richness. The method can also include depositing via atomic layer deposition a second layer of silicon nitride over the first layer of silicon nitride. The second layer of silicon nitride includes a second silicon richness that is different than the first silicon richness.

Abstract: A method, in one embodiment, can include forming a tunnel oxide layer on a substrate. In addition, the method can include depositing via atomic layer deposition a first layer of silicon nitride over the tunnel oxide layer. Note that the first layer of silicon nitride includes a first silicon richness. The method can also include depositing via atomic layer deposition a second layer of silicon nitride over the first layer of silicon nitride. The second layer of silicon nitride includes a second silicon richness that is different than the first silicon richness.

Abstract: Methods for fabricating a FIN structure with a semicircular top surface and rounded top surface corners and edges are disclosed. As a part of a disclosed method, a FIN structure is formed in a semiconductor substrate. The FIN structure includes a top surface having corners and edges. The FIN structure is annealed where the annealing causes the top surface to have a semicircular shape and the top surface corners and edges to be rounded.

Abstract: A source detection system for detecting wireless communication signals, the system comprising: receiving means for receiving a signal; and processing means arranged to filter the signal to separate it into a plurality of frequency components, determine an energy content for each of the frequency components, calculate a measure of the difference between the energy contents of respective frequency components, and make a determination, from said measure, whether the signal has been transmitted from a source.

Abstract: Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured theromoelectric materials (e.g., modulation doping) are further disclosed.

Abstract: In one embodiment, a resistive switching device includes a bottom electrode, a switching layer, a buffer layer, and a top electrode. The switching layer is disposed over the bottom electrode. The buffer layer is disposed over the switching layer and provides a buffer of ions of a memory metal. The buffer layer includes an alloy of the memory metal with an alloying element, which includes antimony, tin, bismuth, aluminum, germanium, silicon, or arsenic. The top electrode is disposed over the buffer layer and provides a source of the memory metal.

Abstract: Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.