Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for processing fundus images using fundus image processing machine learning models. One of the methods includes obtaining a model input comprising one or more fundus images, each fundus image being an image of a fundus of an eye of a patient; processing the model input using a fundus image processing machine learning model, wherein the fundus image processing machine learning model is configured to process the model input comprising the one or more fundus image to generate a model output; and processing the model output to generate health analysis data.

Abstract: A method of forming a semiconductor device comprises forming a fin structure; forming a source/drain structure in the fin structure; and forming a gate electrode over the fin structure. The source/drain structure includes Si1?x?yM1xM2y, where M1 includes Sn, M2 is one or more of P and As, 0.01?x?0.1, and 0.01?y?0.

Abstract: An integrated circuit includes logic circuits, a logic analyzer circuit, and a multiplexer circuit configurable to provide a value of a signal selected from one of the logic circuits to the logic analyzer circuit. The logic analyzer circuit is configured to store the value of the signal selected by the multiplexer circuit. A method is provided for capturing signals within an integrated circuit. The method includes providing a first logic signal from a first logic circuit to a multiplexer circuit, providing a second logic signal from a second logic circuit to the multiplexer circuit, selecting one of the first logic signal or the second logic signal as a selected signal using the multiplexer circuit, and storing a value of the selected signal in the logic analyzer circuit in the integrated circuit.

Abstract: The structure of a semiconductor device with passivation layers on active regions of FET devices and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions disposed on the substrate, nanostructured channel regions disposed between the first and second S/D regions, a passivation layer, and a nanosheet (NS) structure wrapped around the nanostructured channel regions. Each of the S/D regions have a stack of first and second semiconductor layers arranged in an alternating configuration and an epitaxial region disposed on the stack of first and second semiconductor layers. A first portion of the passivation layer is disposed between the epitaxial region and the stack of first and second semiconductor layers and a second portion of the passivation layer is disposed on sidewalls of the nanostructured channel regions.

Abstract: Methods of manufacturing a semiconductor structure are provided. One of the methods includes the following operations. A substrate is received, and the substrate includes a first conductive region and a second conductive region. A first laser anneal is performed on the first conductive region to repair lattice damage. An amorphization is performed on the first conductive region and the second conductive region to enhance silicide formation to a desired phase transformation in the subsequent operations. A pre-silicide layer is formed on the substrate. A thermal anneal is performed to the substrate to form a silicide layer from the pre-silicide layer. A second laser anneal is performed on the first conductive region and the second conductive region.

Abstract: A method can include incorporating graphene oxide (GO) in a solution, reducing the graphene oxide (GO) by refluxing carbon nitride (C3N4) in the solution to form carbon-nitride refluxed-graphene-oxide (C3N4-rGO) composites, and incorporating ruthenium ions into the C3N4-rGO composites to form C3N4-rGO-Ru complexes.

Abstract: In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed by a cooling operation. A second metallic layer is formed. After the cooling operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase. The first metallic film includes a oriented crystalline layer.

Abstract: Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material may be be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.

Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for processing fundus images using fundus image processing machine learning models. One of the methods includes obtaining a model input comprising one or more fundus images, each fundus image being an image of a fundus of an eye of a patient; processing the model input using a fundus image processing machine learning model, wherein the fundus image processing machine learning model is configured to process the model input comprising the one or more fundus image to generate a model output; and processing the model output to generate health analysis data.

Abstract: In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed by a cooling operation. A second metallic layer is formed. After the cooling operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase.

Abstract: Systems or methods of the present disclosure may provide efficient circuit implementation on processing circuitry. The processing circuitry may include a processor, a programmable hardware, or both. The systems and methods may include determining and removing unused and/or redundant portions of predefined software and hardware description instructions before implementing associated circuitry. The implemented circuitry may perform various functions including parsing, pipelining, deparsing, temporary storage and combining, math operations, or a combination thereof, among other things.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: A method of forming a semiconductor device includes etching a substrate to form two first trenches separated by a fin; filling the two first trenches with an isolation layer; and depositing a dielectric layer over the fin and the isolation layer. The method further includes forming a second trench in the dielectric layer over a channel region of the semiconductor device, the second trench exposing the isolation layer. The method further includes etching the isolation layer through the second trench to expose an upper portion of the fin in the channel region of the semiconductor device, and forming a dummy gate in the second trench over the isolation layer and engaging the upper portion of the fin.

Abstract: In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed by a cooling operation. A second metallic layer is formed. After the cooling operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase. The first metallic film includes a oriented crystalline layer.

Abstract: A connection structure for a composite backrest and a method for making the same are provided. The connection structure includes two frames, a backrest body, and metal bushings. The metal bushings include a group of left metal bushings and a group of right metal bushings. The two frames are respectively fixed to the left side and the right side of the backrest body by the left metal bushings and the right metal bushings. The method includes: punching the backrest body and the frames; placing the frames into the backrest body; processing the metal bushings; sandblasting or sanding the external surface of the metal bushing; coating a configured structural adhesive on the metal bushing, and oppositely bonding the metal bushing; fixing the bonded metal bushing by a tool; and placing the fixed metal bushing, the composite backrest and the two frames into a drying oven for heating.

Abstract: Methods of manufacturing a semiconductor structure are provided. One of the methods includes: receiving a substrate including a first conductive region of a first transistor and a second conductive region of a second transistor, wherein the first transistor and the second transistor have different conductive types; performing an amorphization on the first conductive region and the second conductive region; performing an implantation over the first conductive region of the first transistor; forming a contact material layer over the first conductive region and the second conductive region; performing a thermal anneal on the first conductive region and the second conductive region; and performing a laser anneal on the first conductive region and the second conductive region.

Abstract: The structure of a semiconductor device with passivation layers on active regions of FET devices and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions disposed on the substrate, nanostructured channel regions disposed between the first and second SID regions, a passivation layer, and a nanosheet (NS) structure wrapped around the nanostructured channel regions. Each of the S/D regions have a stack of first and second semiconductor layers arranged in an alternating configuration and an epitaxial region disposed on the stack of first and second semiconductor layers.

Abstract: A semiconductor test device for measuring a contact resistance includes: first fin structures, upper portions of the first fin structures protruding from an isolation insulating layer; epitaxial layers formed on the upper portions of the first fin structures, respectively; first conductive layers formed on the epitaxial layers, respectively; a first contact layer disposed on the first conductive layers at a first point; a second contact layer disposed on the first conductive layers at a second point apart from the first point; a first pad coupled to the first contact layer via a first wiring; and a second pad coupled to the second contact layer via a second wiring. The semiconductor test device is configured to measure the contact resistance between the first contact layer and the first fin structures by applying a current between the first pad and the second pad.

Abstract: A method can include incorporating graphene oxide (GO) in a solution, reducing the graphene oxide (GO) by refluxing carbon nitride (C3N4) in the solution to form carbon-nitride refluxed-graphene-oxide (C3N4-rGO) composites, and incorporating ruthenium ions into the C3N4-rGO composites to form C3N4-rGO-Ru complexes.

Abstract: A touch-controlling region of a touch-controlling base plate includes a touch-controlling layer; a non-touch-controlling region includes a plurality of lead wires and at least one touch-controlling unit; the touch-controlling layer includes a plurality of first electrically conductive units and a plurality of second electrically conductive units; the touch-controlling unit is located on at least a first side of the touch-controlling layer; the lead wires are connected to the touch-controlling unit, and are located on a same one side of the touch-controlling layer; and a plurality of lines of the first electrically conductive units that are arranged in the first channel direction are grouped into two groups, and at least one of the groups is connected to the lead wires via each line of the first electrically conductive units that are located at an edge of the first side of the touch-controlling layer.