Patents by Inventor Yi-Ping Pan
Yi-Ping Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967898Abstract: A soft-switching power converter includes a main switch, an energy-releasing switch, and an inductive coupled unit. The main switch is a controllable switch. The energy-releasing switch is coupled to the main switch. The inductive coupled unit is coupled to the main switch and the energy-releasing switch. The inductive coupled unit includes a first inductance, a second inductance coupled to the first inductance, and an auxiliary switch unit. The auxiliary switch unit is coupled to the second inductance to form a closed loop. The main switch and the energy-releasing switch are alternately turned on and turned off. The auxiliary switch unit is controlled to start turning on before the main switch is turned on so as to provide at least one current path.Type: GrantFiled: January 6, 2022Date of Patent: April 23, 2024Assignee: DELTA ELECTRONICS, INC.Inventors: Hung-Chieh Lin, Yi-Ping Hsieh, Jin-Zhong Huang, Hung-Yu Huang, Chih-Hsien Li, Ciao-Yin Pan
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Publication number: 20220139988Abstract: A semiconductor device structure for sensing an incident light includes a substrate, a passivation layer and a wiring structure. The substrate has a device embedded therein. The passivation layer is disposed on the substrate, where the passivation layer has a first side and a second side opposite to the first side, the first side of the passivation layer includes microstructures disposed on the substrate, and the second side of the passivation layer is a continuous flat plane, wherein each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc. The wiring structure is disposed on the substrate, where the writing structure includes at least one contact and metal interconnection patterns respectively formed in different dielectric layers, and the at least one contact and the metal interconnection patterns are electrically connected, where the substrate is located between the passivation layer and the wiring structure.Type: ApplicationFiled: January 17, 2022Publication date: May 5, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Ping Pan, Hung-Jen Hsu
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Patent number: 11227887Abstract: A semiconductor device structure for sensing an incident light includes a substrate, a passivation layer and a wiring structure. The substrate has a device embedded therein. The passivation layer is disposed on the substrate, where the passivation layer has a first side and a second side opposite to the first side, the first side of the passivation layer includes microstructures disposed on the substrate, and the second side of the passivation layer is a continuous flat plane, wherein each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc. The wiring structure is disposed on the substrate, where the writing structure includes at least one contact and metal interconnection patterns respectively formed in different dielectric layers, and the at least one contact and the metal interconnection patterns are electrically connected, where the substrate is located between the passivation layer and the wiring structure.Type: GrantFiled: October 8, 2019Date of Patent: January 18, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Ping Pan, Hung-Jen Hsu
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Publication number: 20200052025Abstract: A semiconductor device structure for sensing an incident light includes a substrate, a passivation layer and a wiring structure. The substrate has a device embedded therein. The passivation layer is disposed on the substrate, where the passivation layer has a first side and a second side opposite to the first side, the first side of the passivation layer includes microstructures disposed on the substrate, and the second side of the passivation layer is a continuous flat plane, wherein each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc. The wiring structure is disposed on the substrate, where the writing structure includes at least one contact and metal interconnection patterns respectively formed in different dielectric layers, and the at least one contact and the metal interconnection patterns are electrically connected, where the substrate is located between the passivation layer and the wiring structure.Type: ApplicationFiled: October 8, 2019Publication date: February 13, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Ping Pan, Hung-Jen Hsu
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Patent number: 10475835Abstract: A semiconductor device structure for sensing an incident light includes a substrate, a wiring structure, and at least one passivation layer. The substrate has a device. The at least one passivation layer is disposed above the wiring structure. The at least one passivation layer includes a plurality of microstructures, and each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc. The wiring structure is disposed below the at least one passivation layer. A method for manufacturing the semiconductor device structure is also provided.Type: GrantFiled: September 5, 2016Date of Patent: November 12, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Ping Pan, Hung-Jen Hsu
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Patent number: 10204959Abstract: A semiconductor device includes a substrate including a front side, a back side opposite to the front side, and a high absorption structure disposed over the back side of the substrate and configured to absorb an electromagnetic radiation in a predetermined wavelength; and a dielectric layer including a high dielectric constant (high k) dielectric material, wherein the dielectric layer is disposed on the high absorption structure.Type: GrantFiled: December 26, 2014Date of Patent: February 12, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chien-Chang Huang, Li-Ming Sun, Chien Nan Tu, Yi-Ping Pan, Yu-Lung Yeh
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Publication number: 20180069043Abstract: A semiconductor device structure for sensing an incident light includes a substrate, a wiring structure, and at least one passivation layer. The substrate has a device. The at least one passivation layer is disposed above the wiring structure. The at least one passivation layer includes a plurality of microstructures, and each of the microstructures has a cross-section in a shape of a triangle, trapezoid or arc. The wiring structure is disposed below the at least one passivation layer. A method for manufacturing the semiconductor device structure is also provided.Type: ApplicationFiled: September 5, 2016Publication date: March 8, 2018Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Ping Pan, Hung-Jen Hsu
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Patent number: 9721983Abstract: A semiconductor device includes a carrier substrate, a first color filter, a first photodetector, and a light enhancement structure. The first photodetector is disposed between the carrier substrate and the first color filter. The light enhancement structure is disposed between the first color filter and the carrier substrate and adjacent to the first photodetector for enhancing intensity of light incident the first photodetector.Type: GrantFiled: May 15, 2015Date of Patent: August 1, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Chang Huang, Chien-Nan Tu, Li-Ming Sun, Yu-Lung Yeh, Yi-Ping Pan
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Publication number: 20160336365Abstract: A semiconductor device includes a carrier substrate, a first color filter, a first photodetector, and a light enhancement structure. The first photodetector is disposed between the carrier substrate and the first color filter. The light enhancement structure is disposed between the first color filter and the carrier substrate and adjacent to the first photodetector for enhancing intensity of light incident the first photodetector.Type: ApplicationFiled: May 15, 2015Publication date: November 17, 2016Inventors: Chien-Chang HUANG, Chien-Nan TU, Li-Ming SUN, Yu-Lung YEH, Yi-Ping PAN
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Publication number: 20150287761Abstract: A semiconductor device includes a substrate including a front side, a back side opposite to the front side, and a high absorption structure disposed over the back side of the substrate and configured to absorb an electromagnetic radiation in a predetermined wavelength; and a dielectric layer including a high dielectric constant (high k) dielectric material, wherein the dielectric layer is disposed on the high absorption structure.Type: ApplicationFiled: December 26, 2014Publication date: October 8, 2015Inventors: CHIEN-CHANG HUANG, LI-MING SUN, CHIEN NAN TU, YI-PING PAN, YU-LUNG YEH
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Publication number: 20060063388Abstract: The present disclosure provides a method for reducing or eliminating residual surface charge from a wafer during a semiconductor fabrication process. Because metal etching and photo resist ashing may result in a surface charge, performing a wet cleaning process directly after the ashing may increase corrosion to metal surfaces. This corrosion may be caused by an electro-chemical reaction that occurs between the surface charge and a solvent used in the wet cleaning process. To prevent this, the present disclosure introduces a water vapor treatment between the ashing and the wet cleaning processes. The water vapor treatment, which may be performed in-situ, provides an electrically neutral path that carries the surface charge from the surface of the wafer to electrical ground. By reducing or eliminating the surface charge, the water vapor treatment lessens or prevents corrosion to metal areas.Type: ApplicationFiled: September 23, 2004Publication date: March 23, 2006Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yao-Jung Yang, Ming-Shuo Yen, Yi-Ming Wang, Yi-Ping Pan
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Publication number: 20050061775Abstract: A new wet processing apparatus is achieved. The apparatus comprises a tank to contain a fluid. A drain opening is included in the tank. A regulating means is disposed in the tank and over the drain opening to control the draining rate and the draining direction of the fluid.Type: ApplicationFiled: September 19, 2003Publication date: March 24, 2005Inventors: Kuo-Tang Hsu, Yi-Ping Pan, Jen-Yuan Yang, Jih-Pao Chang, Tai-Yung Yu