Abstract: A red-light emitting device comprising: a blue LED chip; and a photoluminescence material comprising a narrowband red fluoride phosphor and a broadband red phosphor. The narrowband red phosphor may comprise a manganese-activated fluoride phosphor of composition K2SiF6:Mn4+, K2GeF6:Mn4+, and K2TiF6:Mn4+.

Abstract: A device may include a broadband LED flip chip that generates broadband light of dominant wavelength from about 420 nm to about 480 nm and a FWHM from 25 nm to 50 nm; and at least one photoluminescence layer covering a light emitting face of the broadband LED flip chip; wherein the broadband LED flip chip comprises a broadband InGaN/GaN multiple quantum wells LED chip comprising multiple different wavelength quantum wells in its active region that generate multiple narrowband light emissions of multiple different wavelengths, where broadband light generated by the broadband LED flip chip includes a combination of the multiple narrowband light emissions, and where at least one photoluminescence material layer comprises a first photoluminescence material which generates light with a peak emission wavelength from 490 nm to 550 nm; and a second photoluminescence material which generates light with a peak emission wavelength from 600 nm to 680 nm.

Abstract: A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.

Abstract: An exemplary white light emitting device includes a plurality of LEDs disposed on a substrate, where the LEDs emit blue light at substantially the same correlated color temperature; a first photoluminescence material layer disposed over a first subset of the LEDs; a second photoluminescence material layer disposed over a second subset of the LEDs different from the first subset of the plurality of LEDs, the second photoluminescence material layer separate from the first photoluminescence material layer; and a diffusing layer separate from and disposed over the first and second photoluminescence layers, where the diffusing layer is associated with a plurality of light scattering particles.

Abstract: A full spectrum light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range 490 nm to 680 nm (green to red) and a broadband solid-state excitation source operable to generate broadband blue excitation light with a dominant wavelength in a range from 420 nm to 470 nm, where the broadband blue excitation light includes at least two different blue light emissions in a wavelength range 420 nm to 480 nm.

Abstract: An exemplary light emitting device includes a solid-state light emitter which generates blue excitation light with a dominant wavelength from 440 nm to 470 nm; a yellow to green photoluminescence material which generates light with a peak emission wavelength from 500 nm to 575 nm; a broadband orange to red photoluminescence material which generates light with a narrowband peak emission wavelength from 580 nm to 620 nm; and a narrowband red manganese-activated fluoride phosphor which generates light with a peak emission wavelength from 625 nm to 635 nm. The device generates white light with a spectrum having a broad emission peak from about 530 nm to about 600 nm and a narrow emission peak and where the ratio of the peak emission intensity of the broad emission peak to the peak emission intensity of the narrow emission peak is at least 20%.

Abstract: An LED package comprising: a housing comprising a two-dimensional array of cups comprising a first cup for a first LED, a second cup for a second LED, a third cup for a third LED, and a fourth cup for a fourth LED; and a lead frame comprising respective anode and cathode regions for each cup. Each anode region comprises an anode electrode on a floor of the cup and an anode terminal for providing power to the anode electrode, and each cathode region comprises a cathode electrode on the floor of the cup and a cathode terminal for providing power to the cathode electrode, and wherein the respective anode and cathode terminals for each cup are located along opposing edges of the housing and are aligned with each other.

Abstract: A light emitting device comprising: a first LED for generating a first light with a dominant wavelength from 620 nm to 640 nm and a FWHM of less than 55 nm; a second LED for generating a second light with a dominant wavelength from 500 nm to 565 nm; and a third LED for generating a third light with a light with a dominant wavelength from 430 nm to 480 nm; wherein the first LED comprises a phosphor-converted LED comprising an LED for generating light with a dominant wavelength from 400 nm to 480 nm, and a narrowband red phosphor.

Abstract: An LED-filament includes first and second connectors for receiving a variable power; an at least partially light-transmissive substrate; a first LED array of serially connected first LED chips on a front face of the substrate; a second LED array of serially connected second LED chips on the front face of the substrate; a first photoluminescence layer covering the first LED array for generating a first color temperature; a second photoluminescence layer covering the second LED array for generating a second different color temperature; and at least one resistor serially connected to one of the first LED chips, where the first LED array and second LED array are connected in parallel to the first and second connectors, and where current flowing through the first LED and second LED arrays depends on the power applied to the first and second connectors and where the final color temperature of light generated by the LED-filament depends on the power applied to the first and second connectors.

Abstract: A light-emitting device is provided. The light-emitting device generates a white light and includes at least one light-emitting diode. The at least one light-emitting diode generates a light beam with a broadband blue spectrum and includes a first semiconductor layer, a second semiconductor layer and a multiple quantum well structure. The multiple quantum well structure is located between the first semiconductor layer and the second semiconductor layer, and includes well layers and barrier layers. The well layers include a first well layer, a second well layer and third well layers different in indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of the well layers that are closest to the first semiconductor layer are the third well layers, and the first well layer is closer to the second semiconductor layer than the first semiconductor layer.

Abstract: There is provided a light emitting device for plant cultivation comprising: a broadband blue solid-state light source for generating broadband blue light with a maximum emission wavelength from 420 nm to 495 nm; wherein broadband blue solid-state light source generates blue light from 400 nm to 520 nm having an intensity wavelength spectrum which over a wavelength of at least 40 nm has an intensity that varies by less than 25%, less than 15%, or less than 10%; or from 430 nm to 470 nm or from 450 nm to 465 nm has an intensity that varies by less than 10%.

Abstract: A lighting device comprising: a first LED for generating light of a first chromaticity in a first chromaticity region defined by chromaticity coordinates (0.486, 0.410), (0.509, 0.340), (0.578, 0.405), and (0.537, 0.461); a second LED for generating light of a second chromaticity in a second chromaticity region defined by chromaticity coordinates (0.328, 0.495), (0.342, 0.390), (0.478, 0.444), and (0.464, 0.545); and a third LED for generating light of a third chromaticity in a third chromaticity region defined by chromaticity coordinates (0.195, 0.266), (0.205, 0.212), (0.286, 0.293), and (0.276, 0.328). Light generated by the device comprises a combination of light of the first, second, and third chromaticity and has a chromaticity that can be tunable by controlling power to the first, second and third LEDs.

Abstract: An embodiment of an LED lamp that generates light of a color temperature that decreases with decreasing power applied to the LED lamp may include at least one lighting arrangement that may include a first LED array of serially connected first LED chips, a second LED array of serially connected second LED chips; a first photoluminescence layer covering the first LED array for generating light of a first color temperature; a second photoluminescence layer covering the second LED array for generating light of a second different color temperature; and a linear resistor serially connected to the first LED array, wherein the first LED array and second LED array are connected in parallel.

Abstract: A red-light emitting device comprising: a blue LED chip; and a photoluminescence material comprising a narrowband red fluoride phosphor and a broadband red phosphor. The narrowband red phosphor may comprise a manganese-activated fluoride phosphor of composition K2SiF6:Mn4+, K2GeF6:Mn4+, and K2TiF6:Mn4+.

Abstract: An LED-filament comprising: a partially light transmissive substrate; a plurality of LED chips on a front face of the substrate; a photoluminescence material that is in direct contact with and covers all of the plurality of LED chips; and a light scattering layer that is in direct contact with and covers at least the photoluminescence material, wherein the light scattering layer comprises particles of light scattering material, and wherein the photoluminescence material comprises broadband green to red photoluminescence materials and narrowband red photoluminescence material.

Abstract: There is provided a light emitting device, for example a grow-light, comprising: a first solid-state light source that generates blue light with a blue photon flux; and a second solid-state light source that generates red light with a red photon flux; wherein a ratio of the blue photon flux to red photon flux is from about 1:3 to about 3:1. It may be that the broadband blue light substantially matches at least one of: the absorption peak wavelength of chlorophyll-a; the absorption peak wavelength of chlorophyll-b; and the absorption peak wavelength of carotenoid.

Abstract: A full spectrum light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range 490 nm to 680 nm (green to red) and a broadband solid-state excitation source operable to generate broadband blue excitation light with a dominant wavelength in a range from 420 nm to 470 nm, where the broadband blue excitation light includes at least two different blue light emissions in a wavelength range 420 nm to 480 nm.

Abstract: A light emitting device comprises: a solid-state light emitter which generates blue excitation light with a dominant wavelength from 440 nm to 470 nm; a yellow to green photoluminescence material which generates light with a peak emission wavelength from 500 nm to 575 nm; a broadband orange to red photoluminescence material which generates light with a narrowband peak emission wavelength from 580 nm to 620 nm; and a narrowband red manganese-activated fluoride phosphor which generates light with a peak emission wavelength from 625 nm to 635 nm. The device generates white light with a spectrum having a broad emission peak from about 530 nm to about 600 nm and a narrow emission peak and wherein the ratio of the peak emission intensity of the broad emission peak to the peak emission intensity of the narrow emission peak is at least 20%.

Abstract: There is provided a full spectrum white light emitting device comprising: a broadband LED flip chip that generates broadband light of dominant wavelength from about 420 nm to about 480 nm and a FWHM from 25 nm to 50 nm; and at least one photoluminescence layer covering a light emitting face of the broadband LED flip chip; wherein the broadband LED flip chip comprises a broadband InGaN/GaN multiple quantum wells LED chip comprising multiple different wavelength quantum wells in its active region that generate multiple narrowband light emissions of multiple different wavelengths and wherein broadband light generated by the broadband LED flip chip is composed of a combination of the multiple narrowband light emissions, and wherein the at least one photoluminescence material layer comprises a first photoluminescence material which generates light with a peak emission wavelength from 490 nm to 550 nm; and a second photoluminescence material which generates light with a peak emission wavelength from 600 nm to 680 n

Abstract: A light-emitting device is provided. The light-emitting device generates a white light and includes at least one light-emitting diode. The at least one light-emitting diode generates a light beam with a broadband blue spectrum and includes a first semiconductor layer, a second semiconductor layer and a multiple quantum well structure. The multiple quantum well structure is located between the first semiconductor layer and the second semiconductor layer, and includes well layers and barrier layers. The well layers include a first well layer, a second well layer and third well layers different in indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration.