Abstract: There is provided a display backlight (604), including an excitation source (644) for generating blue light (650); and a wavelength converter (654) being a unitary construction including a combination of a wavelength selective filter layer (658) bonded to a photoluminescence layer (660), where the photoluminescence layer (658) includes a green photoluminescence material and a red photoluminescence material; and where the wavelength selective filter layer (658) is transmissive to blue light and reflective to green and red light.

Abstract: Light emitting devices and LED-filaments comprise an excitation source (e.g. LED) and a photoluminescence material comprising a combination of a first narrow-band red photoluminescence material which generates light with a peak emission wavelength in a range 580 nm to 628 nm and a full width at half maximum emission intensity in a range 45 nm to 60 nm and a second narrow-band red photoluminescence material generates light with a peak emission wavelength in a range 628 nm to 640 nm and a full width at half maximum emission intensity in a range 5 nm to 20 nm. At least one of the first and second narrow-band red photoluminescence materials can comprise a narrow-band red phosphor or a quantum dot (QD) material.

Abstract: There is provided a light emitting device, for example a grow-light, comprising: a grow-light comprising: a broadband blue solid-state light source that generates broadband blue light with a peak emission wavelength from 420 nm to 495 nm and a full width at half maximum of at least 30 nm. It may be that the broadband blue light substantially matches at least one of: the absorption peak wavelength of chlorophyll-a; the absorption peak wavelength of chlorophyll-b; and the absorption peak wavelength of carotenoid.

Abstract: A display backlight, comprises: an excitation source, LED (146), for generating blue excitation light (148) with a peak emission wavelength in a wavelength range 445 nm to 465 nm; and a photoluminescence wavelength conversion layer (152). The photoluminescence wavelength conversion layer (152) comprises a mixture of a green-emitting photoluminescence material with a peak emission in a wavelength range 530 nm to 545 nm, a red-emitting photoluminescence material with a peak emission in a wavelength range 600 nm to 650 nm and particles of light scattering material.

Abstract: A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.

Abstract: A light emitting device comprises: a solid-state light emitter which generates blue excitation light with a dominant wavelength from 440 nm to 470 nm; a yellow to green photoluminescence material which generates light with a peak emission wavelength from 500 nm to 575 nm; a broadband orange to red photoluminescence material which generates light with a narrowband peak emission wavelength from 580 nm to 620 nm; and a narrowband red manganese-activated fluoride phosphor which generates light with a peak emission wavelength from 625 nm to 635 nm. The device generates white light with a spectrum having a broad emission peak from about 530 nm to about 600 nm and a narrow emission peak and wherein the ratio of the peak emission intensity of the broad emission peak to the peak emission intensity of the narrow emission peak is at least 20%.

Abstract: A full spectrum white light emitting device comprising: a broadband solid-state excitation source operable to generate broadband blue excitation light; and at least one photoluminescence material which generates green to red light, wherein the device generates white light whose intensity over the blue to cyan region of the spectrum has a maximum percentage deviation from the intensity of light of a black-body or CIE Standard Illuminant D of less than 50%.

Abstract: A white light emitting device comprises: an LED that generates excitation light of wavelength from 420 nm to 480 nm; and photoluminescence materials that generate light with a peak emission wavelength from 500 nm to 650 nm comprising a broadband phosphor, and a manganese-activated narrowband red fluoride phosphor with a peak emission wavelength from 628 nm to 640 nm and a full width at half maximum of less than 30 nm. The device generates white light with a selected color temperature from 2200K to 6500K, a General Color Rendering Index, CRI Ra, of at least 80, and a Duv (Delta u, v) from 0.0060 to 0.0170 for the selected color temperature and wherein the device has an LER (Luminous Efficacy of Radiation) of at least 320 lm/Wopt.

Abstract: Light emitting devices and LED-filaments comprise an excitation source (e.g. LED) and a photoluminescence material comprising a combination of a first narrow-band red photoluminescence material which generates light with a peak emission wavelength in a range 580 nm to 628 nm and a full width at half maximum emission intensity in a range 45 nm to 60 nm and a second narrow-band red photoluminescence material generates light with a peak emission wavelength in a range 628 nm to 640 nm and a full width at half maximum emission intensity in a range 5 nm to 20 nm. At least one of the first and second narrow-band red photoluminescence materials can comprise a narrow-band red phosphor or a quantum dot (QD) material.

Abstract: A white light emitting device (backlight) comprises: a Multiple Quantum Well (MQW) dual-wavelength LED; and a narrowband photoluminescence material that generates red light with a peak emission wavelength from about 620 nm to about 660 nm. The MQW dual-wavelength LED comprises at least one first Quantum Well (QW) that generates blue light with a dominant wavelength from 440 nm to 470 nm and at least one second Quantum Well (QW) to generate green light with a dominant wavelength from 520 nm to 540 nm.

Abstract: A full spectrum light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range 490 nm to 680 nm (green to red) and a broadband solid-state excitation source operable to generate broadband blue excitation light with a dominant wavelength in a range from 420 nm to 470 nm, where the broadband blue excitation light includes at least two different blue light emissions in a wavelength range 420 nm to 480 nm.

Abstract: An LED-filament includes a partially light-transmissive substrate; blue LED chips mounted on a front face of the substrate; first broad-band green to red photoluminescence materials and a first narrow-band manganese-activated fluoride red photoluminescence material covering the blue LED chips and the front face of the substrate; and second broad-band green to red photoluminescence materials covering the back face of the substrate. The LED-filament may further include a second narrow-band manganese-activated fluoride red photoluminescence material on the back face of the substrate in an amount that is less than 5 wt % of a total red photoluminescence material content on the back face of the substrate.

Abstract: There is provided a display backlight (604), including an excitation source (644) for generating blue light (650); and a wavelength converter (654) being a unitary construction including a combination of a wavelength selective filter layer (658) bonded to a photoluminescence layer (660), where the photoluminescence layer (658) includes a green photoluminescence material and a red photoluminescence material; and where the wavelength selective filter layer (658) is transmissive to blue light and reflective to green and red light.

Abstract: There is provided a light emitting device, for example a grow-light, comprising: a grow-light comprising: a broadband blue solid-state light source that generates broadband blue light with a peak emission wavelength from 420 nm to 495 nm and a full width at half maximum of at least 30 nm. It may be that the broadband blue light substantially matches at least one of: the absorption peak wavelength of chlorophyll-a; the absorption peak wavelength of chlorophyll-b; and the absorption peak wavelength of carotenoid.

Abstract: A color temperature tunable LED-filament includes an elongated light-transmissive substrate; a first array of LED chips on a front face of the substrate; a second array of LED chips on the front face of the substrate; a first photoluminescence layer covering the first array of LED chips; a second photoluminescence layer covering the second array of LED chips; and a circuit arrangement enabling independent power control to the first and second LED arrays or relative power control to the first and second array of LED chips to control the color temperature of light generated by the LED-filament.

Abstract: A display includes a display panel and a backlight. The backlight includes an excitation source that generates blue excitation light with a dominant emission wavelength in a range 445 nm to 465 nm; and a wavelength converting film located remotely to the excitation source and between the excitation source and display panel. The wavelength converting film, in terms of photoluminescence material, includes a manganese-activated fluoride phosphor and a europium activated sulfide phosphor; where the manganese-activated fluoride phosphor receives at least a portion of the blue excitation light and in response emits red light with a peak emission wavelength in a range 610 nm to 650 nm; and where the europium activated sulfide phosphor receives at least a portion of the blue excitation light and in response emits green light having a peak emission wavelength in a range 525 nm to 545 nm; and where the europium activated sulfide phosphor is coated with at least one oxide material.

Abstract: A light emitting device comprises: a solid-state light emitter which generates blue excitation light with a dominant wavelength from 440 nm to 470 nm; a yellow to green photoluminescence material which generates light with a peak emission wavelength from 500 nm to 575 nm; a broadband orange to red photoluminescence material which generates light with a narrowband peak emission wavelength from 580 nm to 620 nm; and a narrowband red manganese-activated fluoride phosphor which generates light with a peak emission wavelength from 625 nm to 635 nm. The device generates white light with a spectrum having a broad emission peak from about 530 nm to about 600 nm and a narrow emission peak and wherein the ratio of the peak emission intensity of the broad emission peak to the peak emission intensity of the narrow emission peak is at least 20%.

Abstract: An LED-filament comprising: a partially light-transmissive substrate; a plurality of blue LED chips mounted on a front face of the substrate; first broad-band green to red photoluminescence materials and a first narrow-band manganese-activated fluoride red photoluminescence material covering the plurality of blue LED chips and the front face of the substrate; and second broad-band green to red photoluminescence materials covering the back face of the substrate. The LED-filament can further comprise a second narrow-band manganese-activated fluoride red photoluminescence material on the back face of the substrate in an amount that is less than 5 wt % of a total red photoluminescence material content on the back face of the substrate.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

Abstract: An LED-filament comprising: a partially light transmissive substrate; a plurality of LED chips on a front face of the substrate; a photoluminescence material that is in direct contact with and covers all of the plurality of LED chips; and a light scattering layer that is in direct contact with and covers at least the photoluminescence material, wherein the light scattering layer comprises particles of light scattering material, and wherein the photoluminescence material comprises broadband green to red photoluminescence materials and narrowband red photoluminescence material.