Patents by Inventor Yi-Shan Hsu
Yi-Shan Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20250204005Abstract: A high electron mobility transistor includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a dielectric layer on the barrier layer, a gate structure on the dielectric layer, and a source electrode and a drain electrode on the dielectric layer at two sides of the gate structure. The source electrode and the drain electrode respectively include a body portion and a plurality of protruding portions. A bottom surface of the body portion directly contacts a top surface of the dielectric layer. The protruding portions are connected to the bottom surface of the body portion and penetrate through the dielectric layer the barrier layer and a portion of the channel layer.Type: ApplicationFiled: March 3, 2025Publication date: June 19, 2025Applicant: United Microelectronics Corp.Inventors: Chih-Tung Yeh, Chun-Liang Hou, Wen-Jung Liao, Chun-Ming Chang, Yi-Shan Hsu, Ruey-Chyr Lee
-
Patent number: 12266701Abstract: A high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation layer and the mesa structure. The mesa structure includes a channel layer, a barrier layer on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction. The contact structure includes a body portion and a plurality of protruding portions. The body portion penetrates through the passivation layer. The protruding portions penetrate through the barrier layer and a portion of the channel layer. In a top view, the body portion overlaps the two opposite first edges of the mesa structure without overlapping the two opposite second edges of the mesa structure.Type: GrantFiled: May 18, 2023Date of Patent: April 1, 2025Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chih-Tung Yeh, Chun-Liang Hou, Wen-Jung Liao, Chun-Ming Chang, Yi-Shan Hsu, Ruey-Chyr Lee
-
Patent number: 12206000Abstract: A method for forming a high electron mobility transistor is disclosed. A mesa structure having a channel layer and a barrier layer is formed on a substrate. The mesa structure has two first edges extending along a first direction and two second edges extending along a second direction. A passivation layer is formed on the substrate and the mesa structure. A first opening and a plurality of second openings connected to a bottom surface of the first opening are formed and through the passivation layer, the barrier layer and a portion of the channel layer. In a top view, the first opening exposes the two first edges of the mesa structure without exposing the two second edges of the mesa structure. A metal layer is formed in the first opening and the second openings thereby forming a contact structure.Type: GrantFiled: January 18, 2024Date of Patent: January 21, 2025Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chih-Tung Yeh, Chun-Liang Hou, Wen-Jung Liao, Chun-Ming Chang, Yi-Shan Hsu, Ruey-Chyr Lee
-
Publication number: 20240162313Abstract: A method for forming a high electron mobility transistor is disclosed. A mesa structure having a channel layer and a barrier layer is formed on a substrate. The mesa structure has two first edges extending along a first direction and two second edges extending along a second direction. A passivation layer is formed on the substrate and the mesa structure. A first opening and a plurality of second openings connected to a bottom surface of the first opening are formed and through the passivation layer, the barrier layer and a portion of the channel layer. In a top view, the first opening exposes the two first edges of the mesa structure without exposing the two second edges of the mesa structure. A metal layer is formed in the first opening and the second openings thereby forming a contact structure.Type: ApplicationFiled: January 18, 2024Publication date: May 16, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chih-Tung Yeh, Chun-Liang Hou, Wen-Jung Liao, Chun-Ming Chang, Yi-Shan Hsu, Ruey-Chyr Lee
-
Publication number: 20230378314Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.Type: ApplicationFiled: July 13, 2023Publication date: November 23, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Bo-Rong Chen, Che-Hung Huang, Chun-Ming Chang, Yi-Shan Hsu, Chih-Tung Yeh, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou
-
Publication number: 20230369448Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.Type: ApplicationFiled: July 13, 2023Publication date: November 16, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Bo-Rong Chen, Che-Hung Huang, Chun-Ming Chang, Yi-Shan Hsu, Chih-Tung Yeh, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou
-
Publication number: 20230290839Abstract: A high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation layer and the mesa structure. The mesa structure includes a channel layer, a barrier layer on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction. The contact structure includes a body portion and a plurality of protruding portions. The body portion penetrates through the passivation layer. The protruding portions penetrate through the barrier layer and a portion of the channel layer. In a top view, the body portion overlaps the two opposite first edges of the mesa structure without overlapping the two opposite second edges of the mesa structure.Type: ApplicationFiled: May 18, 2023Publication date: September 14, 2023Inventors: Chih-Tung Yeh, Chun-Liang Hou, Wen-Jung Liao, Chun-Ming Chang, Yi-Shan Hsu, Ruey-Chyr Lee
-
Patent number: 11749740Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.Type: GrantFiled: December 31, 2019Date of Patent: September 5, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Bo-Rong Chen, Che-Hung Huang, Chun-Ming Chang, Yi-Shan Hsu, Chih-Tung Yeh, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou
-
Patent number: 11695049Abstract: A high electron mobility transistor (HEMT) and method for forming the same are disclosed. The high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation and the mesa structure. The mesa structure includes a channel layer and a barrier layer disposed on the channel layer. The contact structure includes a body portion and a plurality of protruding portions. The body portion is through the passivation layer. The protruding portions connect to a bottom surface of the body portion and through the barrier layer and a portion of the channel layer.Type: GrantFiled: September 23, 2020Date of Patent: July 4, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chih-Tung Yeh, Chun-Liang Hou, Wen-Jung Liao, Chun-Ming Chang, Yi-Shan Hsu, Ruey-Chyr Lee
-
Publication number: 20220052166Abstract: A high electron mobility transistor (HEMT) and method for forming the same are disclosed. The high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation and the mesa structure. The mesa structure includes a channel layer and a barrier layer disposed on the channel layer. The contact structure includes a body portion and a plurality of protruding portions. The body portion is through the passivation layer. The protruding portions connect to a bottom surface of the body portion and through the barrier layer and a portion of the channel layer.Type: ApplicationFiled: September 23, 2020Publication date: February 17, 2022Inventors: Chih-Tung Yeh, Chun-Liang Hou, Wen-Jung Liao, Chun-Ming Chang, Yi-Shan Hsu, Ruey-Chyr Lee
-
Publication number: 20210175343Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.Type: ApplicationFiled: December 31, 2019Publication date: June 10, 2021Inventors: Bo-Rong Chen, Che-Hung Huang, Chun-Ming Chang, Yi-Shan Hsu, Chih-Tung Yeh, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou