Abstract: Only five photomasks are used to fabricate a LCD pixel array structure. A gate dielectric layer of the LCD pixel array structure is formed by two deposition steps to increase the storage capacity of the storage capacitor.

Abstract: A pixel structure and a fabrication method thereof are provided, wherein a semiconductor pattern and a data line are defined simultaneously by performing a half-tone or grey-tone masking process. In addition, a self-alignment manner is further adopted to fabricate a lightly doped region with symmetric lengths on two sides of a channel region through steps such as photoresist ashing and etching, so as to prevent the problem of misalignment of mask generated when a mask is used to define the lightly doped region in the conventional art. Furthermore, a source pattern and a drain pattern are made to directly contact a source region and a drain region of the semiconductor pattern, such that a process of fabricating a via is omitted. Besides, in the present invention, a common line pattern surrounding the peripheral of the pixel region is also formed to improve the aperture ratio of the pixel structure.

Abstract: A method for fabricating pixel structures is disclosed. Specifically, the present invention deposits a conductive layer, a gate dielectric layer, and an aluminum layer on a gate dielectric layer, and performs an isotropic etching process to evenly etch a portion of the aluminum layer in the horizontal and vertical direction. By following this process, the number of photomasks used before the formation of the source/drain region can be reduced, and the conductive layer and the aluminum layer disposed on the capacitor electrode in the capacitor region can be used to increase the capacitance of the capacitor.

Abstract: A pixel structure of a flat panel display for arrangement on a substrate. The pixel structure comprises a storage capacitor, a thin film transistor (TFT) and a data line formed on the substrate. The storage capacitor is disposed on the substrate, comprising a lower metal layer, an upper metal layer and a capacitor dielectric layer disposed therebetween. The TFT is disposed on the substrate and electrically connected to the storage capacitor, comprising an active layer, a gate electrode, and a gate dielectric layer disposed therebetween. The data line is disposed on the substrate, electrically connected to the thin film transistor and insulated from the substrate. The upper metal layer and the gate electrode are formed by the same metal layer and the lower metal layer and the data line are formed by the same metal layer. The invention also discloses a method for fabricating the pixel structure.

Abstract: An LTPS-LCD structure and a method for manufacturing the structure are provided. The structure comprises a substrate where a plurality of pixels are formed thereon. Each of these pixels comprises a control area, a capacitance area, and a display area. The structure is initially formed with a transparent electrode on the substrate, followed by a control device, a capacitance storage device. The display unit is then formed on the control area, the capacitance area, and the display area, respectively. As a result, the capacitance of the structure can be enhanced and the manufacturing processes of masks can be reduced.

Abstract: A method for fabricating a pixel structure is provided. First, a substrate having an active device formed thereon is provided. The active device has a gate, a gate dielectric layer, and a semiconductor layer having a channel, a source, and a drain region. Then, a dielectric layer is formed to cover the active device, and a photo-resist layer having a first photo-resist block and a second photo-resist block thinner than the first photo-resist block is formed on the dielectric layer. The second photo-resist block has openings above the source and the drain region, respectively. The source and the drain regions are exposed by removing part of the dielectric layer with the photo-resist layer as a mask. A second metal layer is formed after removing the second photo-resist block. A source and a drain are formed after removing the first photo-resist block. A pixel electrode connected to the drain is formed.

Abstract: Only five photomasks are used to fabricate a LCD pixel array structure. A gate dielectric layer of the LCD pixel array structure is formed by two deposition steps to increase the storage capacity of the storage capacitor.

Abstract: Five photomasks are used in fabricating the pixel structure of an LCD. In this pixel structure, a metal light-shielding layer is formed under the thin film transistor to reduce photocurrent. Furthermore, a metal conductive wire is used to increase the storage capacity of the storage capacitor.

Abstract: Only five photomasks are used to fabricate a LCD pixel array structure. A gate dielectric layer of the LCD pixel array structure is formed by two deposition steps to increase the storage capacity of the storage capacitor.

Abstract: A method for forming a low temperature polysilicon thin film transistor with a low doped drain structure comprises: a) forming a polysilicon island on a substrate; b) forming a dielectric layer, a metal layer and a cap layer in sequence cover to the polysilicon island; c) forming a photo-resist patterened layer on the cap layer; d) removing the portion of the metal layer and the portion of the cap layer which are uncovered by the photo-resist patterned layer, and the remaining metal layer is uncovered by the remaining cap layer with a predetermined distance at the same side; e) performing a high concentration ion-doping using the metal layer as a mask; f) removing the portion of the metal layer uncovered by the remaining cap layer; and g) performing a low concentration ion-doping using the metal layer as a mask.

Abstract: A pixel structure of a flat panel display for arrangement on a substrate. The pixel structure comprises a storage capacitor, a thin film transistor (TFT) and a data line formed on the substrate. The storage capacitor is disposed on the substrate, comprising a lower metal layer, an upper metal layer and a capacitor dielectric layer disposed therebetween. The TFT is disposed on the substrate and electrically connected to the storage capacitor, comprising an active layer, a gate electrode, and a gate dielectric layer disposed therebetween. The data line is disposed on the substrate, electrically connected to the thin film transistor and insulated from the substrate. The upper metal layer and the gate electrode are formed by the same metal layer and the lower metal layer and the data line are formed by the same metal layer. The invention also discloses a method for fabricating the pixel structure.

Abstract: A semiconductor structure of a liquid crystal display and the manufacturing method thereof are described. The manufacturing method includes the following steps. A patterned polysilicon layer and a first dielectric layer are formed on a substrate. A first patterned metal layer is formed to construct a gate electrode and a capacitor electrode. An ion implantation is conducted on the polysilicon layer to form drain and source electrodes. A second dielectric layer and a second patterned metal layer are formed thereon. Sequentially, a third dielectric layer is formed thereon. A plurality of via openings are formed by a patterned photoresist layer, and a third metal layer is formed thereon and filled into the via openings. The patterned photoresist layer and the redundant third metal layer are stripped from the substrate to form via plugs in the via openings. A patterned transparent conductive layer is formed thereon to connect the via plugs.

Abstract: A pixel structure of a flat panel display for arrangement on a substrate. The pixel structure comprises a storage capacitor, a thin film transistor (TFT) and a data line formed on the substrate. The storage capacitor is disposed on the substrate, comprising a lower metal layer, an upper metal layer and a capacitor dielectric layer disposed therebetween. The TFT is disposed on the substrate and electrically connected to the storage capacitor, comprising an active layer, a gate electrode, and a gate dielectric layer disposed therebetween. The data line is disposed on the substrate, electrically connected to the thin film transistor and insulated from the substrate. The upper metal layer and the gate electrode are formed by the same metal layer and the lower metal layer and the data line are formed by the same metal layer. The invention also discloses a method for fabricating the pixel structure.

Abstract: An LTPS-LCD structure and a method for manufacturing the structure are provided. The structure comprises a substrate where a plurality of pixels are formed thereon. Each of these pixels comprises a control area, a capacitance area, and a display area. The structure is initially formed with a transparent electrode on the substrate, followed by a control device, a capacitance storage device. The display unit is then formed on the control area, the capacitance area, and the display area, respectively. As a result, the capacitance of the structure can be enhanced and the manufacturing processes of masks can be reduced.

Abstract: A method for fabricating a pixel structure is provided. First, a substrate having an active device formed thereon is provided. The active device has a gate, a gate dielectric layer, and a semiconductor layer having a channel, a source, and a drain region. Then, a dielectric layer is formed to cover the active device, and a photo-resist layer having a first photo-resist block and a second photo-resist block thinner than the first photo-resist block is formed on the dielectric layer. The second photo-resist block has openings above the source and the drain region, respectively. The source and the drain regions are exposed by removing part of the dielectric layer with the photo-resist layer as a mask. A second metal layer is formed after removing the second photo-resist block. A source and a drain are formed after removing the first photo-resist block. A pixel electrode connected to the drain is formed.

Abstract: An LTPS-LCD structure and a method for manufacturing the structure are provided. The structure comprises a substrate where a plurality of pixels are formed thereon. Each of these pixels comprises a control area, a capacitance area, and a display area. The structure is initially formed with a transparent electrode on the substrate, followed by a control device, a capacitance storage device. The display unit is then formed on the control area, the capacitance area, and the display area, respectively. As a result, the capacitance of the structure can be enhanced and the manufacturing processes of masks can be reduced.

Abstract: A liquid crystal display pixel structure and a method for manufacturing the structure are provided. An additional conductive layer (i.e. a third conductive layer) is provided to electrically connect a second patterned conductive layer, a control device, and a capacitance device at a control area and a capacitance area of the substrate. A half-tone mask is utilized in the manufacturing processes to simultaneously define the patterns of the third conductive layer and a transparent conductive layer. Thus, the photolithography processes can be economized to reduce manufacturing costs while increasing capacity.

Abstract: A method for fabricating pixel structures is disclosed. Specifically, the present invention deposits a conductive layer, a gate dielectric layer, and an aluminum layer on a gate dielectric layer, and performs an isotropic etching process to evenly etch a portion of the aluminum layer in the horizontal and vertical direction. By following this process, the number of photomasks used before the formation of the source/drain region can be reduced, and the conductive layer and the aluminum layer disposed on the capacitor electrode in the capacitor region can be used to increase the capacitance of the capacitor.

Abstract: A pixel structure and a fabrication method thereof are provided, wherein a semiconductor pattern and a data line are defined simultaneously by performing a half-tone or grey-tone masking process. In addition, a self-alignment manner is further adopted to fabricate a lightly doped region with symmetric lengths on two sides of a channel region through steps such as photoresist ashing and etching, so as to prevent the problem of misalignment of mask generated when a mask is used to define the lightly doped region in the conventional art. Furthermore, a source pattern and a drain pattern are made to directly contact a source region and a drain region of the semiconductor pattern, such that a process of fabricating a via is omitted. Besides, in the present invention, a common line pattern surrounding the peripheral of the pixel region is also formed to improve the aperture ratio of the pixel structure.

Abstract: In this pixel structure, a metal layer/a dielectric layer/a heavily doped silicon layer constitutes a bottom electrode/a capacitor dielectric layer/a top electrode of a storage capacitor. At the same time, a metal shielding layer is formed under the thin film transistor to decrease photo-leakage-current.