Abstract: A pixel structure including at least one thin-film transistor, at least one storage capacitor, a patterned first metal layer, an interlayer dielectric layer, a passivation layer, and a patterned pixel electrode is provided. The storage capacitor is electrically connected to the thin-film transistor. The patterned first metal layer is covered by the interlayer dielectric layer. The thin-film transistor and the interlayer dielectric layer are covered by the passivation layer, wherein an opening is formed in the passivation layer and a part of the interlayer dielectric layer. The patterned pixel electrode is formed on a part of the passivation layer and a part of the interlayer dielectric layer and contacted with a part of the passivation layer and a part of the interlayer dielectric layer. The storage capacitor includes the patterned first metal layer, a remained part of the interlayer dielectric layer located under the opening, and the patterned pixel electrode.

Abstract: A pixel, a storage capacitor, and a method for forming the same. The storage capacitor formed on a substrate comprises a semiconductor layer, a first dielectric layer, a first conductive layer, a second dielectric layer and a second conductive layer. The semiconductor layer is formed on the substrate wherein the semiconductor layer and the substrate are covered by the first dielectric layer. The first conductive layer is formed on a part of the first dielectric layer. The second dielectric layer is formed on the first conductive layer, and the lateral side of the stacking structure including the second dielectric layer and the first conductive layer has a taper shaped. The second conductive layer is formed on a part of the second dielectric layer.

Abstract: A semiconductor structure of a liquid crystal display and the manufacturing method thereof are described. The manufacturing method includes the following steps. A patterned polysilicon layer and a first dielectric layer are formed on a substrate. A first patterned metal layer is formed to construct a gate electrode and a capacitor electrode. An ion implantation is conducted on the polysilicon layer to form drain and source electrodes. A second dielectric layer and a second patterned metal layer are formed thereon. Sequentially, a third dielectric layer is formed thereon. A plurality of via openings are formed by a patterned photoresist layer, and a third metal layer is formed thereon and filled into the via openings. The patterned photoresist layer and the redundant third metal layer are stripped from the substrate to form via plugs in the via openings. A patterned transparent conductive layer is formed thereon to connect the via plugs.

Abstract: Five photomasks are used in fabricating the pixel structure of an LCD. In this pixel structure, a metal light-shielding layer is formed under the thin film transistor to reduce photocurrent. Furthermore, a metal conductive wire is used to increase the storage capacity of the storage capacitor.

Abstract: A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over and across the scan line. The bottom conductive wire is electrically connected to the upper conductive wire. The active device is electrically connected to the scan line and the upper conductive wire. The shielding electrode is disposed over the bottom conductive wire. The pixel electrode disposed over the shielding electrode is electrically connected to the active device. In addition, parts of the pixel electrode and parts of the shielding electrode form a storage capacitor.

Abstract: Only five photomasks are used to fabricate a LCD pixel array structure. A gate dielectric layer of the LCD pixel array structure is formed by two deposition steps to increase the storage capacity of the storage capacitor.

Abstract: A liquid crystal display pixel structure and a method for manufacturing the structure are provided. An additional conductive layer (i.e. a third conductive layer) is provided to electrically connect a second patterned conductive layer, a control device, and a capacitance device at a control area and a capacitance area of the substrate. A half-tone mask is utilized in the manufacturing processes to simultaneously define the patterns of the third conductive layer and a transparent conductive layer. Thus, the photolithography processes can be economized to reduce manufacturing costs while increasing capacity.

Abstract: An LTPS-LCD structure and a method for manufacturing the structure are provided. The structure comprises a substrate where a plurality of pixels are formed thereon. Each of these pixels comprises a control area, a capacitance area, and a display area. The structure is initially formed with a transparent electrode on the substrate, followed by a control device, a capacitance storage device. The display unit is then formed on the control area, the capacitance area, and the display area, respectively. As a result, the capacitance of the structure can be enhanced and the manufacturing processes of masks can be reduced.

Abstract: A pixel structure of a flat panel display for arrangement on a substrate. The pixel structure comprises a storage capacitor, a thin film transistor (TFT) and a data line formed on the substrate. The storage capacitor is disposed on the substrate, comprising a lower metal layer, an upper metal layer and a capacitor dielectric layer disposed therebetween. The TFT is disposed on the substrate and electrically connected to the storage capacitor, comprising an active layer, a gate electrode, and a gate dielectric layer disposed therebetween. The data line is disposed on the substrate, electrically connected to the thin film transistor and insulated from the substrate. The upper metal layer and the gate electrode are formed by the same metal layer and the lower metal layer and the data line are formed by the same metal layer. The invention also discloses a method for fabricating the pixel structure.

Abstract: A method for forming a low temperature polysilicon thin film transistor with a low doped drain structure comprises: a) forming a polysilicon island on a substrate; b) forming a dielectric layer, a metal layer and a cap layer in sequence cover to the polysilicon island; c) forming a photo-resist patterened layer on the cap layer d) removing the portion of the metal layer and the portion of the cap layer which are uncovered by the photo-resist patterned layer, and the remaining metal layer is uncovered by the remaining cap layer with a predetermined distance at the same side; e) performing a high concentration ion-doping using the metal layer as a mask; f) removing the portion of the metal layer uncovered by the remaining cap layer; and g) performing a low concentration ion-doping using the metal layer as a mask.

Abstract: A method of preventing the cathode of an active matrix organic light emitting diode from breaking. A substrate having an array of thin film transistors thereon is provided. Each thin film transistor includes a gate electrode, a channel layer, a source terminal and a drain terminal. A passivation layer is formed over the substrate and then the passivation layer is planarized. Thereafter, an opening that exposes the drain terminal is formed in the passivation layer. An anode layer is formed over the passivation layer and the interior of a portion of the opening so that the drain terminal and the anode layer are electrically connected. A light-emitting layer and a cathode layer are sequentially formed over the substrate to form an active matrix organic light emitting device.

Abstract: A method of preventing the cathode of an active matrix organic light emitting diode from breaking. A substrate having an array of thin film transistors thereon is provided. Each thin film transistor includes a gate electrode, a channel layer, a source terminal and a drain terminal. A passivation layer is formed over the substrate and then the passivation layer is planarized. Thereafter, an opening that exposes the drain terminal is formed in the passivation layer. An anode layer is formed over the passivation layer and the interior of a portion of the opening so that the drain terminal and the anode layer are electrically connected. A light-emitting layer and a cathode layer are sequentially formed over the substrate to form an active matrix organic light emitting device.

Abstract: A method of preventing the cathode of an active matrix organic light emitting diode from breaking. A substrate having an array of thin film transistors thereon is provided. Each thin film transistor includes a gate electrode, a channel layer, a source terminal and a drain terminal. A passivation layer is formed over the substrate and then the passivation layer is planarized. Thereafter, an opening that exposes the drain terminal is formed in the passivation layer. An anode layer is formed over the passivation layer and the interior of a portion of the opening so that the drain terminal and the anode layer are electrically connected. A light-emitting layer and a cathode layer are sequentially formed over the substrate to form an active matrix organic light emitting device.

Abstract: A method of preventing the cathode of an active matrix organic light emitting diode from breaking. A substrate having an array of thin film transistors thereon is provided. Each thin film transistor includes a gate electrode, a channel layer, a source terminal and a drain terminal. A passivation layer is formed over the substrate and then the passivation layer is planarized. Thereafter, an opening that exposes the drain terminal is formed in the passivation layer. An anode layer is formed over the passivation layer and the interior of a portion of the opening so that the drain terminal and the anode layer are electrically connected. A light-emitting layer and a cathode layer are sequentially formed over the substrate to form an active matrix organic light emitting device.