Patents by Inventor Yi-Shin Chu
Yi-Shin Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240372028Abstract: A method of manufacturing a semiconductor structure includes: forming a light-absorption layer in a substrate, wherein the light-absorption layer includes an upper surface above an upper surface of the substrate; forming a first doped region and a second doped region in the light-absorption layer adjacent to the first doped region; depositing a first patterned mask layer over the light-absorption layer, wherein the first patterned mask layer includes an opening exposing the second doped region and covers the first doped region; forming a first silicide layer in the opening on the second doped region; and forming a second silicide layer on the first doped region.Type: ApplicationFiled: July 18, 2024Publication date: November 7, 2024Inventors: YI-SHIN CHU, HSIANG-LIN CHEN, YIN-KAI LIAO, SIN-YI JIANG, KUAN-CHIEH HUANG
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Publication number: 20240363672Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a first substrate comprising a first semiconductor material. A first light sensor is disposed within the first substrate. The first light sensor is configured to absorb electromagnetic radiation within a first wavelength range. A second light sensor is disposed within an absorption structure underlying the first substrate. The second light sensor is configured to absorb electromagnetic radiation within a second wavelength range different from the first wavelength range. The absorption structure underlies the first light sensor and comprises a second semiconductor material different from the first semiconductor material.Type: ApplicationFiled: August 2, 2023Publication date: October 31, 2024Inventors: Hsiang-Lin Chen, Yi-Shin Chu, Yin-Kai Liao, Sin-Yi Jiang, Sung-Wen Huang Chen
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Publication number: 20240355742Abstract: The present disclosure describes a method for the fabrication of ruthenium conductive structures over cobalt conductive structures. In some embodiments, the method includes forming a first opening in a dielectric layer to expose a first cobalt contact and filling the first opening with ruthenium metal to form a ruthenium contact on the first cobalt contact. The method also includes forming a second opening in the dielectric layer to expose a second cobalt contact and a gate structure and filling the second opening with tungsten to form a tungsten contact on the second cobalt contact and the gate structure. Further, the method includes forming a copper conductive structure on the ruthenium contact and the tungsten contact, where the copper from the copper conductive structure is in contact with the ruthenium metal from the ruthenium contact.Type: ApplicationFiled: July 1, 2024Publication date: October 24, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Wei Chang, Chien-Shun Liao, Sung-Li Wang, Shuen-Shin Liang, Shu-Lan Chang, Yi-Ying Liu, Chia-Hung Chu, Hsu-Kai Chang
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Publication number: 20240355843Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a substrate comprising a first semiconductor material and a recess in a top surface of the substrate. An absorption structure is disposed within the recess and comprising a second semiconductor material different from the first semiconductor material. The absorption structure has a first doping type. A vertical well region is disposed within the substrate and underlies the absorption structure. The vertical well region has a second doping type different from the first doping type. A liner layer is disposed between the absorption structure and the substrate. The liner layer comprises the second semiconductor material and separates the vertical well region from the absorption structure.Type: ApplicationFiled: July 27, 2023Publication date: October 24, 2024Inventors: Po-Chun Liu, Yi-Shin Chu, Sin-Yi Jiang
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Patent number: 12125934Abstract: A method of manufacturing a semiconductor structure includes: forming a light-absorption layer in a substrate; forming a first doped region of a first conductivity type and a second doped region of a second conductivity type in the light-absorption layer adjacent to the first doped region; depositing a first patterned mask layer over the light-absorption layer, wherein the first patterned mask layer includes an opening exposing the second doped region and covers the first doped region; forming a first silicide layer in the opening on the second doped region; depositing a barrier layer over the first doped region; and annealing the barrier layer to form a second silicide layer on the first doped region.Type: GrantFiled: March 26, 2021Date of Patent: October 22, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Yi-Shin Chu, Hsiang-Lin Chen, Yin-Kai Liao, Sin-Yi Jiang, Kuan-Chieh Huang
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Publication number: 20240339555Abstract: A method and structure providing an optical sensor having an optimized Ge—Si interface includes providing a substrate having a pixel region and a logic region. In some embodiments, the method further includes forming a trench within the pixel region. In various examples, and after forming the trench, the method further includes forming a doped semiconductor layer along sidewalls and along a bottom surface of the trench. In some embodiments, the method further includes forming a germanium layer within the trench and over the doped semiconductor layer. In some examples, and after forming the germanium layer, the method further includes forming an optical sensor within the germanium layer.Type: ApplicationFiled: June 17, 2024Publication date: October 10, 2024Inventors: Yin-Kai Liao, Jen-Cheng Liu, Kuan-Chieh Huang, Chih-Ming Hung, Yi-Shin Chu, Hsiang-Lin Chen, Sin-Yi Jiang
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Publication number: 20240339497Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and methods of fabricating the same are disclosed. The semiconductor device includes first and second S/D regions, a nanostructured channel region disposed between the first and second S/D regions, a gate structure surrounding the nanostructured channel region, first and second contact structures disposed on first surfaces of the first and second S/D regions, a third contact structure disposed on a second surface of the first S/D region, and an etch stop layer disposed on a second surface of the second S/D region. The third contact structure includes a metal silicide layer, a silicide nitride layer disposed on the metal silicide layer, and a conductive layer disposed on the silicide nitride layer.Type: ApplicationFiled: June 18, 2024Publication date: October 10, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Wei Chang, Shuen-Shin Liang, Sung-Li Wang, Hsu-Kai Chang, Chia-Hung Chu, Chien-Shun Liao, Yi-Ying Liu
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Patent number: 12068252Abstract: The present disclosure describes a method for the fabrication of ruthenium conductive structures over cobalt conductive structures. In some embodiments, the method includes forming a first opening in a dielectric layer to expose a first cobalt contact and filling the first opening with ruthenium metal to form a ruthenium contact on the first cobalt contact. The method also includes forming a second opening in the dielectric layer to expose a second cobalt contact and a gate structure and filling the second opening with tungsten to form a tungsten contact on the second cobalt contact and the gate structure. Further, the method includes forming a copper conductive structure on the ruthenium contact and the tungsten contact, where the copper from the copper conductive structure is in contact with the ruthenium metal from the ruthenium contact.Type: GrantFiled: July 28, 2022Date of Patent: August 20, 2024Inventors: Cheng-Wei Chang, Chien-Shun Liao, Sung-Li Wang, Shuen-Shin Liang, Shu-Lan Chang, Yi-Ying Liu, Chia-Hung Chu, Hsu-Kai Chang
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Patent number: 12046634Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and methods of fabricating the same are disclosed. The semiconductor device includes first and second S/D regions, a nanostructured channel region disposed between the first and second S/D regions, a gate structure surrounding the nanostructured channel region, first and second contact structures disposed on first surfaces of the first and second S/D regions, a third contact structure disposed on a second surface of the first S/D region, and an etch stop layer disposed on a second surface of the second S/D region. The third contact structure includes a metal silicide layer, a silicide nitride layer disposed on the metal silicide layer, and a conductive layer disposed on the silicide nitride layer.Type: GrantFiled: January 23, 2023Date of Patent: July 23, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Wei Chang, Shuen-Shin Liang, Sung-Li Wang, Hsu-Kai Chang, Chia-Hung Chu, Chien-Shun Liao, Yi-Ying Liu
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Patent number: 12015099Abstract: A method and structure providing an optical sensor having an optimized Ge—Si interface includes providing a substrate having a pixel region and a logic region. In some embodiments, the method further includes forming a trench within the pixel region. In various examples, and after forming the trench, the method further includes forming a doped semiconductor layer along sidewalls and along a bottom surface of the trench. In some embodiments, the method further includes forming a germanium layer within the trench and over the doped semiconductor layer. In some examples, and after forming the germanium layer, the method further includes forming an optical sensor within the germanium layer.Type: GrantFiled: June 2, 2021Date of Patent: June 18, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yin-Kai Liao, Jen-Cheng Liu, Kuan-Chieh Huang, Chih-Ming Hung, Yi-Shin Chu, Hsiang-Lin Chen, Sin-Yi Jiang
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Publication number: 20240145520Abstract: The present disclosure provides a method for fabricating an image sensor. The method includes the following operations. A cavity is formed at a first surface of a substrate. A germanium layer is formed in the cavity. A first heavily doped region is formed in the germanium layer by an implantation operation. A second heavily doped region is formed at a position proximal to a top surface of the germanium layer, wherein the second heavily doped region is laterally surrounded by the first heavily doped region from a top view perspective. An interconnect structure is formed over the germanium layer.Type: ApplicationFiled: January 4, 2024Publication date: May 2, 2024Inventors: JHY-JYI SZE, SIN-YI JIANG, YI-SHIN CHU, YIN-KAI LIAO, HSIANG-LIN CHEN, KUAN-CHIEH HUANG, JUNG-I LIN
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Publication number: 20240136401Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.Type: ApplicationFiled: January 5, 2024Publication date: April 25, 2024Inventors: Yin-Kai Liao, Sin-Yi Jiang, Hsiang-Lin Chen, Yi-Shin Chu, Po-Chun Liu, Kuan-Chieh Huang, Jyh-Ming Hung, Jen-Cheng Liu
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Publication number: 20240120639Abstract: A 3D IC package is provided. The 3D IC package includes: a first IC die comprising a first substrate at a back side of the first IC die; a second IC die stacked at the back side of the first IC die and facing the first substrate; a TSV through the first substrate and electrically connecting the first IC die and the second IC die, the TSV having a TSV cell including a TSV cell boundary surrounding the TSV; and a protection module fabricated in the first substrate, wherein the protection module is electrically connected to the TSV, and the protection module is within the TSV cell.Type: ApplicationFiled: August 10, 2023Publication date: April 11, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Po-Hsiang Huang, Fong-Yuan Chang, Tsui-Ping Wang, Yi-Shin Chu
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Publication number: 20240105877Abstract: Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.Type: ApplicationFiled: November 29, 2023Publication date: March 28, 2024Inventors: Jhy-Jyi Sze, Sin-Yi Jiang, Yi-Shin Chu, Yin-Kai Liao, Hsiang-Lin Chen, Kuan-Chieh Huang
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Patent number: 11908900Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material. The second semiconductor material is a group IV semiconductor or a group III-V compound semiconductor. A passivation layer is disposed on the second semiconductor material. The passivation layer includes the first semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material.Type: GrantFiled: July 21, 2022Date of Patent: February 20, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yin-Kai Liao, Sin-Yi Jiang, Hsiang-Lin Chen, Yi-Shin Chu, Po-Chun Liu, Kuan-Chieh Huang, Jyh-Ming Hung, Jen-Cheng Liu
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Patent number: 11901393Abstract: The present disclosure provides a semiconductor structure, including a substrate including a first material, wherein the first material generates electrical signals from radiation within a first range of wavelengths, an image sensor element including a second material, wherein the second material generates electrical signals from radiation within a second range of wavelengths, the second range is different from first range, a transparent layer proximal to a light receiving surface of the image sensor element, wherein the transparent layer is transparent to radiation within the second range of wavelength, and an interconnect structure connected to a signal transmitting surface of the image sensor element.Type: GrantFiled: February 25, 2021Date of Patent: February 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Jhy-Jyi Sze, Sin-Yi Jiang, Yi-Shin Chu, Yin-Kai Liao, Hsiang-Lin Chen, Kuan-Chieh Huang, Jung-I Lin
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Patent number: 11855237Abstract: Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.Type: GrantFiled: January 9, 2023Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTDInventors: Jhy-Jyi Sze, Sin-Yi Jiang, Yi-Shin Chu, Yin-Kai Liao, Hsiang-Lin Chen, Kuan-Chieh Huang
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Patent number: 11848345Abstract: Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.Type: GrantFiled: February 17, 2021Date of Patent: December 19, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiang-Lin Chen, Yi-Shin Chu, Yin-Kai Liao, Sin-Yi Jiang, Kuan-Chieh Huang, Jhy-Jyi Sze
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Publication number: 20230387159Abstract: Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.Type: ApplicationFiled: August 9, 2023Publication date: November 30, 2023Inventors: Hsiang-Lin Chen, Yi-Shin Chu, Yin-Kai Liao, Sin-Yi Jiang, Kuan-Chieh Huang, Jhy-Jyi Sze
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Patent number: 11824254Abstract: A 3D IC package is provided. The 3D IC package includes: a first IC die comprising a first substrate at a back side of the first IC die; a second IC die stacked at the back side of the first IC die and facing the first substrate; a TSV through the first substrate and electrically connecting the first IC die and the second IC die, the TSV having a TSV cell including a TSV cell boundary surrounding the TSV; and a protection module fabricated in the first substrate, wherein the protection module is electrically connected to the TSV, and the protection module is within the TSV cell.Type: GrantFiled: July 27, 2022Date of Patent: November 21, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Po-Hsiang Huang, Fong-Yuan Chang, Tsui-Ping Wang, Yi-Shin Chu