Abstract: A recording element is provided for use in a high density thin film recording head. The recording element includes a substrate, a thermally conductive material in contact with the substrate, and an insulative layer in contact with the thermally conductive material. The recording element further includes a magneto-resistive element in contact with the insulative layer such that the magneto-resistive element fails to overlay the thermally conductive material. The thermally conductive material and the insulative layer have thermal conductivities sufficient to dissipate heat from the magneto-resistive element so that heat induced malfunctions of the recording element are minimized. The method for manufacturing the recording element is also provided.

Abstract: The method of wet etching an aluminum oxide substrate deposits a thin layer of titanium film or chromium film on the aluminum oxide surface prior to the application of the photo-resist coating to form a barrier between the aluminum oxide and the photo-resist. This barrier layer inhibits the reaction between the aluminum oxide and the photo-resist during the photolithographic process. The undercutting of the aluminum oxide in the wet etching process is therefore controlled by the deposition of the barrier layer comprising the thin layer of titanium film or chromium film. The titanium film used is nominally 30 .ANG. thick to obtain the beneficial effects noted above while the chromium film would be approximately 1000 .ANG. thick.

Abstract: A magnetoresistive (MR) device and barrier formation process is disclosed in which a barrier layer of an aluminum-titanium oxidic compound of approximately 35 .ANG. thickness is formed between a first alumina film and an overlying material of iron bearing content, such as nickel-iron. The aluminum-titanium oxidic compound layer serves as an etchant barrier for the alumina film in a subsequent etching process to reduce or eliminate "rosette" formation otherwise occurring when etchant is trapped within pores of a porous substrate such as ferrite, ceramic or other polycrystalline material. The barrier layer also serves as a passivation layer to prevent the surface of the underlying alumina film from being modified by the transfer of ultrasonic energy during subsequent wirebonding processing which would otherwise result in film delamination at the nickel-iron/alumina layer interface.

Abstract: A magnetoresistive (MR) device and barrier formation process is disclosed in which a barrier layer of an aluminum-titanium oxidic compound of approximately 35 .ANG. thickness is formed between a first alumina film and an overlying material of iron bearing content, such as nickel-iron. The aluminum-titanium oxidic compound layer serves as an etchant barrier for the alumina film in a subsequent etching process to reduce or eliminate "rosette" formation otherwise occurring when etchant is trapped within pores of a porous substrate such as ferrite, ceramic or other polycrystalline material. The barrier layer also serves as a passivation layer to prevent the surface of the underlying alumina film from being modified by the transfer of ultrasonic energy during subsequent wirebonding processing which would otherwise result in film delamination at the nickel-iron/alumina layer interface.