Abstract: A light emitting diode packaging structure includes a package body, a red LED chip, a blue LED chip, a green LED chip, a package material and a yellow phosphor. Three LED chips are disposed within an accommodating room of the body package and covered by the package material. The yellow phosphor is uniformly mixed with the package material. A white light is formed by a mix of three types of light from the LED chips. Additionally, a yellow light which is generated from the excitement of the yellow phosphor with the blue light is mixed with a part of the blue light to further form the white light.

Abstract: A light emitting diode packaging structure includes a package body, a red LED chip, a blue LED chip, a green LED chip, a package material and a yellow phosphor. Three LED chips are disposed within an accommodating room of the body package and covered by the package material. The yellow phosphor is uniformly mixed with the package material. A white light is formed by a mix of three types of light from the LED chips. Additionally, a yellow light which is generated from the excitement of the yellow phosphor with the blue light is mixed with a part of the blue light to further form the white light.

Abstract: A lateral light-emitting diode backlight module includes a base, a circuit board, and at least a light emitting diode wherein the base having a heat conductor, the circuit board having a conductive pad formed on a surface thereof, and the circuit board disposed on the heat conductor and connected to the heat conductor. Each light emitting diode comprising a substrate, a heat sink fastened to the substrate and connected to the heat conductor, an LED chip disposed on the heat sink and emits light laterally, and a pin mounted on the substrate and extended to the conductive pad of the circuit board.

Abstract: A light emitting diode device includes a substrate, a light emitting diode chip, a plurality of wires, a plurality of lead frames, an insulating body, an encapsulant and a lens. The light emitting diode chip is electrically connected with a lead frame and the substrate. The substrate is electrically connected with another lead frame. Hence, the length of the wires can be decreased, and the reliability of the light emitting diode device can be improved.

Abstract: The present invention is an improved Light-Emitting Diode (LED) package structure comprising a light-emitting diode chip, a package board of heat conductive semiconductor material, a lead frame, and a circuit. Whereon the package board installs plural thermal vias to conduct the electricity circuit and transmit the heat out of the package due to the LED luminescing as well.

Abstract: A phosphor coating process for a light-emitting device is described. A light-emitting diode chip is bonded on a substrate. A light-sensitive layer is formed over the light-emitting diode and the substrate. The light-sensitive layer is patterned by a photolithography process to expose an area of the light-emitting diode chip, on which desires a phosphor coating. A phosphor-adhesive material is filled on the area of the light-emitting diode chip.

Abstract: A side view light emitting diode (LED) package structure includes a package housing, a side view LED chip and a thermal conductive member. The side view LED chip is enclosed by the package housing and an emitting direction of the side view LED chip is perpendicular to a thickness direction of a substrate. The thermal conductive member connected with the side view LED chip is disposed inside the package housing and a portion of which extends out of a dissipation opening of the package housing to be exposed so that heat of the side view LED chip is dissipated.

Abstract: An LED backlight module includes a substrate. An LED array, composed of a plurality of red, blue and green lamp LEDs, is mounted on the substrate. A light-mixing chamber is mounted on the substrate and is used to seal the LED array inside. A diffusion sheet is secured inside the light-mixing chamber and is disposed parallel to the substrate. A first prism sheet is secured inside the light-mixing chamber and is disposed parallel to the diffusion sheet. A second prism sheet is secured inside the light-mixing chamber and is disposed parallel to the first prism sheet.

Abstract: A light emitting diode packaging structure includes a package body, a red LED chip, a blue LED chip, a green LED chip, a package material and a yellow phosphor. Three LED chips are disposed within an accommodating room of the body package and covered by the package material. The yellow phosphor is uniformly mixed with the package material. A white light is formed by a mix of three types of light from the LED chips. Additionally, a yellow light which is generated from the excitement of the yellow phosphor with the blue light is mixed with a part of the blue light to further form the white light.

Abstract: An LED backlight module includes a substrate. An LED array, composed of a plurality of red, blue and green lamp LEDs, is mounted on the substrate. A light-mixing chamber is mounted on the substrate and is used to seal the LED array inside. A diffusion sheet is secured inside the light-mixing chamber and is disposed parallel to the substrate. A first prism sheet is secured inside the light-mixing chamber and is disposed parallel to the diffusion sheet. A second prism sheet is secured inside the light-mixing chamber and is disposed parallel to the first prism sheet.

Abstract: A fabrication method of VCSEL is used to form a contact electrode on a VCSEL in a resonance cavity. A heavily doped layer is formed in a resonance cavity where the light intensity is the weakest. A Bragg reflector is etched while the etching stop point being above the heavily doped layer. Dopants are doped to form a high-carrier-concentration ohmic channel as a connection between an electrode and the heavily doped layer. Thereby, a contact electrode is formed on the VCSEL structure in the resonance cavity without the need of high etching precision.

Abstract: The specification discloses a resonant cavity device array for wavelength division multiplexing and the method for fabricating it. The structure of the resonant cavity device is selectively formed with an oxide structure, which contains more than one AlxGa1-xAs oxide tuning layer. After the oxidation of AlGaAs, AlGaO is formed to change the refractive index and the thickness, thereby changing and controlling the wavelength of the resonant cavity device. The wavelength variant of each resonant cavity device is determined by the number of layers, thicknesses and compositions of the AlxGa1-xAs oxide tuning layer contained in the selective oxide structure.

Abstract: A fabrication method of VCSEL is used to form a contact electrode on a VCSEL in a resonance cavity. A heavily doped layer is formed in a resonance cavity where the light intensity is the weakest. A Bragg reflector is etched while the etching stop point being above the heavily doped layer. Dopants are doped to form a high-carrier-concentration ohmic channel as a connection between an electrode and the heavily doped layer. Thereby, a contact electrode is formed on the VCSEL structure in the resonance cavity without the need of high etching precision.

Abstract: The specification discloses a resonant cavity device array for wavelength division multiplexing and the method for fabricating it. The structure of the resonant cavity device is selectively formed with an oxide structure, which contains more than one AlxGa1-xAs oxide tuning layer. After the oxidation of AlGaAs, AlGaO is formed to change the refractive index and the thickness, thereby changing and controlling the wavelength of the resonant cavity device. The wavelength variant of each resonant cavity device is determined by the number of layers, thicknesses and compositions of the AlxGa1-xAs oxide tuning layer contained in the selective oxide structure.