Patents by Inventor Yi-Wei Tseng

Yi-Wei Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11943935
    Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region and a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region. Preferably, the diffusion region includes a H-shape according to a top view.
    Type: Grant
    Filed: September 26, 2022
    Date of Patent: March 26, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Yen Tseng, Shu-Ru Wang, Yu-Tse Kuo, Chang-Hung Chen, Yi-Ting Wu, Shu-Wei Yeh, Ya-Lan Chiou, Chun-Hsien Huang
  • Patent number: 11937334
    Abstract: Methods, systems, and apparatuses for Sidelink Discontinuous Reception (SL DRX) in a wireless communication system to avoid ambiguity on slot offset calculations on SL DRX. A method for a UE comprises performing a SL communication associated with a destination Identity (ID), having a SL DRX configuration associated with the SL communication, wherein the SL DRX configuration comprises at least an on-duration timer and a DRX cycle, deriving a first offset associated with the SL communication based on the destination ID and the DRX cycle, deriving a second offset associated with the SL communication based on the destination ID and a number of slots per subframe, starting the on-duration timer after a time period determined based on the second offset from the beginning of a subframe, wherein the subframe is determined based on at least the first offset, and monitoring Sidelink Control Information (SCI) when the on-duration timer is running.
    Type: Grant
    Filed: March 8, 2023
    Date of Patent: March 19, 2024
    Assignee: ASUSTek Computer Inc.
    Inventors: Yi-Hsuan Kung, Li-Chih Tseng, Chun-Wei Huang, Ming-Che Li
  • Patent number: 11921325
    Abstract: A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: March 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Yi-Chen Chen, Lee-Chuan Tseng, Shih-Wei Lin
  • Publication number: 20240032439
    Abstract: A method of fabricating magnetoresistive random access memory, including providing a substrate, forming a bottom electrode layer, a magnetic tunnel junction stack, a top electrode layer and a hard mask layer sequentially on the substrate, wherein a material of the top electrode layer is titanium nitride, a material of the hard mask layer is tantalum or tantalum nitride, and a percentage of nitrogen in the titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer, and patterning the bottom electrode layer, the magnetic tunnel junction stack, the top electrode layer and the hard mask layer into multiple magnetoresistive random access memory cells.
    Type: Application
    Filed: September 27, 2023
    Publication date: January 25, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, JUN XIE
  • Publication number: 20240016063
    Abstract: An MRAM structure includes an MTJ, a first SOT element, a conductive layer and a second SOT element disposed from bottom to top. A protective layer is disposed on the second SOT element. The protective layer covers and contacts a top surface of the second SOT element. The protective layer is an insulator. A conductive via penetrates the protective layer and contacts the second SOT element.
    Type: Application
    Filed: August 9, 2022
    Publication date: January 11, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Wei Kuo, Chung-Yi Chiu, Shun-Yu Huang, Yi-Wei Tseng
  • Publication number: 20240016062
    Abstract: A method of fabricating an MTJ device is provided including the following process. A first via is formed in the first dielectric layer. A first electrode layer is formed on the first dielectric layer and the first via. An MTJ stack layer is formed on the first electrode layer. A patterned second electrode layer is formed on the MTJ stack layer and used as a mask. A first ion beam etching process is performed to etch the patterned second electrode layer and pattern the MTJ stack layer and the first electrode layer to form a second electrode, an MTJ stack structure, and a first electrode. A first protective layer is formed to cover the second electrode and the MTJ stack structure. A second ion beam etching process is performed to remove a portion of the MTJ stack structure and a portion of the first electrode.
    Type: Application
    Filed: July 27, 2022
    Publication date: January 11, 2024
    Applicant: United Microelectronics Corp.
    Inventors: Shun-Yu Huang, Yi-Wei Tseng, Chih-Wei Kuo, Yi-Xiang Chen, Hsuan-Hsu Chen, Chun-Lung Chen
  • Publication number: 20240016067
    Abstract: A magnetic memory including a substrate, a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ) stack, a first protection layer, and a second protection layer is provided. The SOT layer is located over the substrate. The MTJ stack is located on the SOT layer. The first protection layer and the second protection layer are located on the sidewall of the MTJ stack. The first protection layer is located between the second protection layer and the MTJ stack. There is a notch between the second protection layer and the SOT layer.
    Type: Application
    Filed: August 10, 2022
    Publication date: January 11, 2024
    Applicant: United Microelectronics Corp.
    Inventors: Chih-Wei Kuo, Chung Yi Chiu, Yi-Wei Tseng, Hsuan-Hsu Chen, Chun-Lung Chen
  • Patent number: 11849648
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.
    Type: Grant
    Filed: June 8, 2021
    Date of Patent: December 19, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Patent number: 11812669
    Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, a top electrode layer on the magnetic tunnel junction stack, and a hard mask layer on said top electrode layer, wherein the material of top electrode layer is titanium nitride, a material of said hard mask layer is tantalum or tantalum nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
    Type: Grant
    Filed: June 9, 2022
    Date of Patent: November 7, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, Jun Xie
  • Patent number: 11645389
    Abstract: Systems, methods, devices, and computer readable media related to fraud detection. Fraud detection is achieved using a flexible scripting language and syntax that simplifies the generation of fraud detection rules. The rules are structured as conditional IF-THEN statements that include data objects referred to as Anchors and Add-Ons. The Anchors and Add-Ons used to generate the rules also correspond to a distinct data path for the retrieval data from any of a variety of data sources. The retrieval of data from the various data sources is optimized based on data dependencies within the rules. By knowing the data dependencies of each rule and utilizing parallelization of rule execution, the retrievals of data from the data sources is achieved efficiently so the rules can be executed quickly.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: May 9, 2023
    Assignee: MASTERCARD TECHNOLOGIES CANADA ULC
    Inventors: Yi Wei Tseng, Randy Lukashuk, Perry McGee, Amiran Gigiberia, Andrew Giblin, Kenny Wan, Andrian Sevastyanov
  • Publication number: 20230038528
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.
    Type: Application
    Filed: October 18, 2022
    Publication date: February 9, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Patent number: 11531754
    Abstract: Systems, methods, devices, and computer readable media related to fraud detection. Fraud detection is achieved using a flexible scripting language and syntax that simplifies the generation of fraud detection rules. The rules are structured as conditional IF-THEN statements that include data objects referred to as Anchors and Add-Ons. The Anchors and Add-Ons used to generate the rules also correspond to a distinct data path for the retrieval data from any of a variety of data sources. The generated rules with distinct data paths are then converted using a transpiler from the scripting language into native language source code (e.g., PHP, Java, etc.) for deployment in a particular environment. The rules are then executed in real-time in the environment to detect potential fraudulent activity.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: December 20, 2022
    Assignee: MASTERCARD TECHNOLOGIES CANADA ULC
    Inventors: Yi Wei Tseng, Randy Lukashuk, Perry McGee, Amiran Gigiberia, Andrew Giblin, Kenny Wan, Andrian Sevastyanov
  • Patent number: 11508904
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ. Preferably, the first liner and the second liner are made of different materials.
    Type: Grant
    Filed: May 5, 2021
    Date of Patent: November 22, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Publication number: 20220302374
    Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, a top electrode layer on the magnetic tunnel junction stack, and a hard mask layer on said top electrode layer, wherein the material of top electrode layer is titanium nitride, a material of said hard mask layer is tantalum or tantalum nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
    Type: Application
    Filed: June 9, 2022
    Publication date: September 22, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, JUN XIE
  • Patent number: 11387408
    Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: July 12, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, Jun Xie
  • Patent number: 11283007
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming an etch stop layer on the first IMD layer; forming a second IMD layer on the etch stop layer; forming a patterned hard mask on the second IMD layer; performing a first etching process to form a contact hole in the second IMD layer for exposing the etch stop layer; performing a second etching process to remove the patterned hard mask; performing a third etching process to remove the etch stop layer and the first IMD layer for exposing the MTJ; and forming a metal interconnection in the contact hole.
    Type: Grant
    Filed: October 7, 2020
    Date of Patent: March 22, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Wei Kuo, Meng-Jun Wang, Yi-Wei Tseng, Yu-Tsung Lai, Jiunn-Hsiung Liao
  • Publication number: 20220076263
    Abstract: Systems, methods, and non-transitory computer readable media for generating a configurable data container that includes a first data field, exporting the configurable data container for use by a client-side device, receiving a modification to the configurable data container, automatically binding the second data field to a second data path for retrieval of a second data value to be used in a second fraud detection rule, generating an updated configurable data container, and exporting the updated configurable data container for use by the client-side device. The first data field corresponds to a first data path for retrieval of a first data value to be used in a first fraud detection rule. The configurable data container includes a server-side schema and a client-side schema. Each of the server-side schema and the client-side schema is configured to validate a first input data value corresponding to the first data field.
    Type: Application
    Filed: September 10, 2020
    Publication date: March 10, 2022
    Inventors: Andrian Sevastyanov, Yi Wei Tseng, Perry McGee, Sunita Khera
  • Publication number: 20210296572
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.
    Type: Application
    Filed: June 8, 2021
    Publication date: September 23, 2021
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Publication number: 20210257542
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ. Preferably, the first liner and the second liner are made of different materials.
    Type: Application
    Filed: May 5, 2021
    Publication date: August 19, 2021
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Patent number: 11063206
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ. Preferably, the first liner and the second liner are made of different materials.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: July 13, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang