Abstract: The present invention provides a topical composition having a fermented product of lactic acid bacteria synbiotics as an active ingredient. The fermented product of lactic acid bacteria synbiotics is obtained by performing a fermenting step with lactic acid bacteria and a deactivating step on a fermenting substrate. The lactic acid bacteria are consisting of Lactobacillus salivarius subsp. salicinius AP-32, Bifidobacterium animalis subsp. lactis CP-9 and Lactobacillus acidophilus TYCA06. The fermenting substrate includes animal protein, plant protein and/or plant extracts. The aforementioned fermented product of lactic acid bacteria synbiotics can effectively inhibit the growth of Staphylococcus aureus and/or Propionibacterium acnes, and can be used in the topical composition.

Abstract: An illuminating device including a light-emitting element array and a plurality of light-diffusing elements is provided. The light-emitting element array includes a plurality of discrete light-emitting areas. The plurality of light-diffusing elements respectively correspond to the light-emitting areas, and each light-diffusing element includes a light-entering surface and a light-exiting surface. The light beams emitted by the light-emitting areas respectively enter the corresponding light-diffusing element via the corresponding light-entering surface. After the light beams respectively leave the corresponding light-diffusing element via the corresponding light-exiting surface, the light beams respectively form a plurality of illumination beams. The illumination beams appear in an array form for illumination.

Abstract: Particulate deposition rate on a photolithographic mask, particularly of tin (Sn) particles produced within an EUV light source, is reduced by producing turbulence within a radiation source chamber of the EUV light source. Turbulence can be produced by changing the temperature, pressure, and/or gas flow rate within the radiation source chamber. The turbulence reduces the number of particles exiting the EUV light source which could be deposited on the photomask.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

Abstract: An imaging lens, sequentially including a first lens element to a seventh lens element from an object side to an image side along an optical axis, is provided. The first lens element has positive refracting power. The second lens element has negative refracting power. The third lens element and the fourth lens element form a cemented lens element, and the cemented lens element has positive refracting power. The fifth lens element has positive refracting power. The sixth lens element has positive refracting power. The seventh lens element has negative refracting power.

Abstract: The present application discloses an information interaction method, device, apparatus and medium based on augmented reality. The information interaction method includes: generating first interactive data in response to an interactive operation of a first virtual target in a virtual reality space, and sending the first interactive data to a first server terminal; receiving second interactive data corresponding to a second virtual target sent by the first server terminal, wherein the second virtual target and the first virtual target share the virtual reality space; and calling a physical engine to render the interactive operations of the first virtual target and the second virtual target in the virtual reality space based on the first interactive data and the second interactive data, and generating and displaying an interactive rendering result.

Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin in a substrate, the first semiconductor fin adjacent the second semiconductor fin, forming a dummy gate structure extending over the first semiconductor fin and the second semiconductor fin, depositing a first dielectric material surrounding the dummy gate structure, replacing the dummy gate structure with a first metal gate structure, performing an etching process on the first metal gate structure and on the first dielectric material to form a first recess in the first metal gate structure and a second recess in the first dielectric material, wherein the first recess extends into the substrate, and wherein the second recess is disposed between the first semiconductor fin and the second semiconductor fin, and depositing a second dielectric material within the first recess.

Abstract: Methods to form low-k dielectric materials for use as intermetal dielectrics in multilevel interconnect systems, along with their chemical and physical properties, are provided. The deposition techniques described include PECVD, PEALD, and ALD processes where the precursors such as TEOS and MDEOS may provide the requisite O-atoms and O2 gas may not be used as one of the reactants. The deposition techniques described further include PECVD, PEALD, and ALD processes where O2 gas may be used and, along with the O2 gas, precursors containing embedded Si—O—Si bonds, such as (CH3O)3—Si—O—Si—(CH3O)3) and (CH3)3—Si—O—Si—(CH3)3 may be used.

Abstract: A method includes forming an ILD to cover a gate stack of a transistor. The ILD and the gate stack are parts of a wafer. The ILD is etched to form a contact opening, and a source/drain region of the transistor or a gate electrode in the gate stack is exposed through the contact opening. A conductive capping layer is formed to extend into the contact opening. A metal-containing material is plated on the conductive capping layer in a plating solution using electrochemical plating. The metal-containing material has a portion filling the contact opening. The plating solution has a sulfur content lower than about 100 ppm. A planarization is performed on the wafer to remove excess portions of the metal-containing material. A remaining portion of the metal-containing material and a remaining portion of the conductive capping layer in combination form a contact plug.

Abstract: A wireless node device includes a neural network module, a wireless network communication circuit, and a control circuit. The neural network module has a plurality of trained parameters. The control circuit is coupled to the neural network module and the wireless network communication circuit. The control circuit obtains, from the wireless network communication circuit, a plurality of current state data corresponding to a plurality of time points, and loads the neural network module to obtain estimated network data based on the current state data. The control circuit controls the wireless network communication circuit according to the estimated network data.

Abstract: A method of fabricating magnetoresistive random access memory, including providing a substrate, forming a bottom electrode layer, a magnetic tunnel junction stack, a top electrode layer and a hard mask layer sequentially on the substrate, wherein a material of the top electrode layer is titanium nitride, a material of the hard mask layer is tantalum or tantalum nitride, and a percentage of nitrogen in the titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer, and patterning the bottom electrode layer, the magnetic tunnel junction stack, the top electrode layer and the hard mask layer into multiple magnetoresistive random access memory cells.

Abstract: A sequence of data entry screens are configured to collect the data from a user. The method and system receive data entered by a user into a data entry screen. The method and system then determine metrics of the collected data, and ranks the collected data and the data entry screens based on the determined metrics. The ranking is then used to display the next best screen in the sequence for collecting data.

Abstract: A method of forming a semiconductor memory device includes the following steps. First of all, a substrate is provided, and a plurality of gates is formed in the substrate, along a first direction. Next, a semiconductor layer is formed on the substrate, covering the gates, and a plug is then in the semiconductor layer, between two of the gates. Then, a deposition process is performed to from a stacked structure on the semiconductor layer. Finally, the stacked structure is patterned to form a plurality of bit lines, with one of the bit lines directly in contact with the plug.

Abstract: A circuit board includes a dielectric substrate, a signal line and a pair of ground wires. The dielectric substrate includes a base and an elevated platform protruding from an upper surface of the base. The signal line is conformally disposed on the dielectric substrate and includes a first segment disposed on an upper surface of the elevated platform, a second segment extending on the upper surface of the base, and a third segment disposed on a sidewall of the elevated platform and connecting the first segment and the second segment. The pair of ground wires are disposed on the dielectric substrate and are spaced apart from the signal line. A projection of the second segment of the signal line on the upper surface of the base partly overlaps projections of the pair of ground wires on the upper surface of the base.

Abstract: This disclosure relates to techniques for performing encryption and decryption operations and that provide fully non-custodial data management, i.e., where end-users have control over their data—rather than a third party. Specifically, the techniques disclosed herein are configured to allow end-users to have the ability to recover and/or maintain access to data stored on third-party systems—even if one or more third-party entities storing the data are no longer in compliance with a predetermined set of operational criteria. In other implementations, novel split private key generation techniques are disclosed, wherein a newly-generated private key may be split into at least three shards, e.g., an authentication service provider shard, a shard for another entity, and a “recovery” shard. In still other implementations, an iFrame may decrypt separate shards of a private key using a delegated key management system (DKMS) and then use the reconstructed private key to sign a digital transaction.

Abstract: This application relates to the technical field of images, and provides a method for training a light filling model, an image processing method, and a related device thereof. The method includes: obtain an albedo portrait training image and a normal portrait training image; performing processing on the refined matte portrait training image, the plurality of frames of OLAT training images, and a panoramic environment image to obtain a to-be-light-filled composite rendered image and a light-filled composite rendered image; and training an initial light filling model by using the albedo portrait training image, the normal portrait training image, the to-be-light-filled composite rendered image, and the light-filled composite rendering image, to obtain a target light filling model. In this application, by using a deep learning method, a portrait and an environment in a to-be-photographed scene are filled with light to improve sharpness and contrast of the portrait.

Abstract: A lamp including a light emitting module having a base substrate with a mounting surface, a plurality of white-light emitting elements disposed on the mounting surface in a circular arrangement with a central axis extending from a center thereof, an elongated support structure extending longitudinally along the central axis from the mounting surface, and at least one row of red-green-blue-light emitting elements distributed along the elongated support structure lengthwise. The lamp further including a light diffuser cover placed over the plurality of white-light emitting elements with the elongated support structure inserted therethrough, and a hollow lamp shade fitted over the light emitting module to surround the elongated support structure with a base opening of the hollow lamp shade interfacing the base substrate, wherein a rim of the base opening encircle the plurality of white-light emitting elements capable of illuminating the hollow lamp shade from the base opening.

Abstract: An electronic device, including an active device substrate, an insulation film, a vertical wire, and an anisotropic conductive adhesive, is provided. The active device substrate includes a substrate, a first wire, and a second wire. The first wire is configured on a first surface of the substrate, the second wire is configured on a second surface of the substrate, and a side surface connects the first surface to the second surface that is opposite to the first surface. The insulation film is configured on the side surface of the substrate. The vertical wire is configured on a surface of the insulation film and is located between the insulation film and the side surface of the substrate. The anisotropic conductive adhesive is configured between the vertical wire and the side surface of the substrate and electrically connects the vertical wire to the first wire and the second wire.

Abstract: An image sensor for imaging fingerprints has multiple photodiode groups each with field of view through a microlens determined by optical characteristics of the microlens and locations of the microlens and openings of upper and lower mask layers. Many photodiode groups have fields of view outwardly splayed from a center-direct field of view. A diameter of openings of the upper mask layer distant from the group having a center-direct field of view is larger than openings of a photodiode group having a center-direct field of view. A method of matching illumination of a group of photodiodes with center-direct field of view to illumination of photodiode groups having outwardly splayed fields of view includes sizing openings in the upper mask layer of photodiode groups with outwardly splayed fields of view larger than openings in the upper mask layer associated with photodiode groups having center-direct field of view.