Abstract: A method for increasing calcium absorption includes administering to a subject in need thereof a composition containing a culture of Bifidobacterium animalis subsp. lactis CP-9. The Bifidobacterium animalis subsp. lactis CP-9 is deposited under the Budapest Treaty at the China Center for Type Culture Collection (CCTCC) under an accession number CCTCC M 2014588.

Abstract: A thermal image endoscope system includes a thermal image endoscope catheter and a control device. The thermal image endoscope catheter including: a tube body; a thermal image capturing assembly and a disposing component are positioned at a head part of the tube body, the thermal image capturing assembly captures a thermal image from a shooting area; the disposing component has a disposing area and the disposing area is inside the shooting area; a towing component is connected to the head part. The control device including: a driving component is connected to a towing component, a controller actuates the driving component according to a disposing command received by a receiving component to drive the towing component to tow the head part, and actuates a gate of a light guide assembly to selectively couple or decouple a light pipe of the light guide assembly to the disposing component.

Abstract: An eyeshade structure for bilirubin detection includes a body, a first detection module, and a second detection module. The body includes a bottom plate and a side wall. The side wall is connected to the bottom plate and forms an accommodating space with the bottom plate. The first detection module is arranged on the bottom plate. The second detection module is arranged on the bottom plate and is adjacent to the first detection module. The first detection module and the second detection module each include a circuit board, a light-emitting element, an inner photographing element, and an outer photographing element. The circuit board is connected to the bottom plate. The light-emitting element is electrically connected to the circuit board. The inner photographing element is electrically connected to the circuit board. The outer photographing element is electrically connected to the circuit board.

Abstract: A method of forming a semiconductor memory device includes the following steps. First of all, a substrate is provided, and a plurality of gates is formed in the substrate, along a first direction. Next, a semiconductor layer is formed on the substrate, covering the gates, and a plug is then in the semiconductor layer, between two of the gates. Then, a deposition process is performed to from a stacked structure on the semiconductor layer. Finally, the stacked structure is patterned to form a plurality of bit lines, with one of the bit lines directly in contact with the plug.

Abstract: A method for increasing calcium absorption includes use of a composition containing a culture of Bifidobacterium longum subsp. infantis BLI-02 which is deposited under the Budapest Treaty at the China General Microbiological Culture Collection Center (CGMCC) under an accession number CGMCC 15212.

Abstract: A communication apparatus and an associated method are disclosed. The communication apparatus includes differential input ports; a signal pairing circuit, arranged for coupling the differential input ports to a receiving circuit, wherein when the signal pairing circuit operates in a first mode, a positive input port and a negative input port of the differential input ports correspondingly electrically couple to a positive input terminal and a negative input terminal of the receiving circuit, when the signal pairing circuit operates in a second mode, the positive input port and the negative input port of the differential input ports correspondingly electrically couple to the negative input terminal and the positive input terminal of the receiving circuit; a processor circuit, arranged for determining whether the decoded signal includes a specific code before the timer is time out and generating a determination result; and control the signal pairing circuit according to the determination result.

Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin in a substrate, the first semiconductor fin adjacent the second semiconductor fin, forming a dummy gate structure extending over the first semiconductor fin and the second semiconductor fin, depositing a first dielectric material surrounding the dummy gate structure, replacing the dummy gate structure with a first metal gate structure, performing an etching process on the first metal gate structure and on the first dielectric material to form a first recess in the first metal gate structure and a second recess in the first dielectric material, wherein the first recess extends into the substrate, and wherein the second recess is disposed between the first semiconductor fin and the second semiconductor fin, and depositing a second dielectric material within the first recess.

Abstract: A computer system configured to overcome the conventional bottleneck of memory throughput. A wafer-on-wafer (WOW) technology is adapted to overcome the physical limitation of quantity and length in circuit deployments. The memory devices and the memory controllers in the logic circuit layer are improved to transmit data in differential signals. The differential signals can significantly reduce the error rate in high-speed transmissions, at a voltage level far lower than that of the conventional single-end signals. Thus, the power consumption of the computer system is significantly reduced. Furthermore, the memory controller in the computer system is improved to be an integrated controller having control over physical layer signals. Thereby, the conventional physical layer interface is no longer needed in the computer system, and therefore the cost to the computer system is further reduced.

Abstract: Methods to form low-k dielectric materials for use as intermetal dielectrics in multilevel interconnect systems, along with their chemical and physical properties, are provided. The deposition techniques described include PECVD, PEALD, and ALD processes where the precursors such as TEOS and MDEOS may provide the requisite O-atoms and O2 gas may not be used as one of the reactants. The deposition techniques described further include PECVD, PEALD, and ALD processes where O2 gas may be used and, along with the O2 gas, precursors containing embedded Si—O—Si bonds, such as (CH3O)3—Si—O—Si—(CH3O)3) and (CH3)3—Si—O—Si—(CH3)3 may be used.

Abstract: A method for fabricating buried word line of a dynamic random access memory (DRAM) includes the steps of: forming a trench in a substrate; forming a first conductive layer in the trench; forming a second conductive layer on the first conductive layer, in which the second conductive layer above the substrate and the second conductive layer below the substrate comprise different thickness; and forming a third conductive layer on the second conductive layer to fill the trench.

Abstract: A mechanism for building decentralized computer applications that execute on a distributed computing system. The present technology works within a web browser, client application, or other software and provides access to decentralized computer applications through the browser. The present technology is non-custodial, wherein a public-private key pair, which represents user identity, is created on a client machine and then directly encrypted by a third-party platform without relying on one centralized computing system.

Abstract: A chamber door, such as an etch chamber door may be heated during etch processing to, e.g., prevent etching by-products from adhering to the etch chamber door. Such heating of the etch chamber door, however, can impact the processing parameters and result in non-uniform processing, such as non-uniform etching characteristics across a semiconductor wafer, for instance. An insulator, such as an insulating film covering surfaces of the heated door, can reduce or eliminate transmission of heat from the door to a work piece such as a semiconductor wafer and this reduce or eliminate the non-uniformity of the process results.

Abstract: This disclosure relates to techniques for performing encryption and decryption operations and that provide fully non-custodial data management, i.e., where end-users have control over their data—rather than a third party. Specifically, the techniques disclosed herein are configured to allow end-users to have the ability to recover and/or maintain access to data stored on third-party systems—even if one or more third-party entities storing the data are no longer in compliance with a predetermined set of operational criteria. In other implementations, novel split private key generation techniques are disclosed, wherein a newly-generated private key may be split into at least three shards, e.g., an authentication service provider shard, a shard for another entity, and a “recovery” shard. In still other implementations, an iFrame may decrypt separate shards of a private key using a delegated key management system (DKMS) and then use the reconstructed private key to sign a digital transaction.

Abstract: A method includes forming an ILD to cover a gate stack of a transistor. The ILD and the gate stack are parts of a wafer. The ILD is etched to form a contact opening, and a source/drain region of the transistor or a gate electrode in the gate stack is exposed through the contact opening. A conductive capping layer is formed to extend into the contact opening. A metal-containing material is plated on the conductive capping layer in a plating solution using electrochemical plating. The metal-containing material has a portion filling the contact opening. The plating solution has a sulfur content lower than about 100 ppm. A planarization is performed on the wafer to remove excess portions of the metal-containing material. A remaining portion of the metal-containing material and a remaining portion of the conductive capping layer in combination form a contact plug.

Abstract: An image capturing lens sequentially includes a first lens to a seventh lens from an object side to an image side along an optical axis. The first lens has a positive refracting power. The second lens has a negative refracting power. The third lens has a positive refracting power. The fourth lens has a negative refracting power. The fifth lens has a positive refracting power. The fourth lens and the fifth lens form a cemented lens. The sixth lens has a positive refracting power. The seventh lens has a negative refracting power.

Abstract: A device includes a substrate, a first dielectric layer over the substrate, a first conductive feature in the first dielectric layer, and an etch stop layer over the first dielectric layer. The etch stop layer includes metal-doped aluminum nitride. The device further includes a second dielectric layer over the etch stop layer, and a second conductive feature in the second dielectric layer. The second conductive feature extends into the etch stop layer and contacts the first conductive feature.

Abstract: A method of forming a semiconductor memory device includes the following steps. First of all, a substrate is provided, and a plurality of gates is formed in the substrate, along a first direction. Next, a semiconductor layer is formed on the substrate, covering the gates, and a plug is then in the semiconductor layer, between two of the gates. Then, a deposition process is performed to from a stacked structure on the semiconductor layer. Finally, the stacked structure is patterned to form a plurality of bit lines, with one of the bit lines directly in contact with the plug.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: The present disclosure relates to systems, non-transitory computer-readable media, and methods for generating and modifying digital animations based on user interactions with a unique user interface portraying a one-dimensional layer motion element and/or elements for generating and utilizing animation path for digital design objects and animation layers. The disclosed system can provide a dynamic one-dimensional layer motion element that adapts to a selected animation layer and portrays selectable animation frames from the animation layer. The disclosed systems can provide options for generating and modifying various frames of the digital animation based on user interactions with the one-dimensional layer motion element, an animation timeline, and/or a corresponding animation canvas.

Abstract: A monitor wafer is provided. The monitor wafer includes a substrate and a cleaning layer. The cleaning layer is disposed on a bottom surface of the substrate. The cleaning layer is configured to remove particles from the substrate and/or a processing tool.