Patents by Inventor Yi-Wen Chiu
Yi-Wen Chiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11969727Abstract: Present invention is related to a tumor microenvironment on chip or a biochip for cell therapy having a carrier, a first cell or tissue culture area and a second cell or tissue area imbedded within the carrier. The present invention provides a biochip successfully cooperating micro fluidic technology and cell culture achieving the goal for detecting or testing the function of cell therapy for cancer or tumor.Type: GrantFiled: October 22, 2021Date of Patent: April 30, 2024Assignees: China Medical University, China Medical University HospitalInventors: Yi-Wen Chen, Ming-You Shie, Der-Yang Cho, Shao-Chih Chiu, Kai-Wen Kan, Chien-Chang Chen
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Patent number: 11942420Abstract: A semiconductor device includes a first gate structure extending along a first lateral direction. The semiconductor device includes a first interconnect structure, disposed above the first gate structure, that extends along a second lateral direction perpendicular to the first lateral direction. The first interconnect structure includes a first portion and a second portion electrically isolated from each other by a first dielectric structure. The semiconductor device includes a second interconnect structure, disposed between the first gate structure and the first interconnect structure, that electrically couples the first gate structure to the first portion of the first interconnect structure. The second interconnect structure includes a recessed portion that is substantially aligned with the first gate structure and the dielectric structure along a vertical direction.Type: GrantFiled: June 8, 2022Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Guo-Huei Wu, Hui-Zhong Zhuang, Chih-Liang Chen, Cheng-Chi Chuang, Shang-Wen Chang, Yi-Hsun Chiu
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Publication number: 20240096805Abstract: In an embodiment, a method of forming a structure includes forming a first transistor and a second transistor over a first substrate; forming a front-side interconnect structure over the first transistor and the second transistor; etching at least a backside of the first substrate to expose the first transistor and the second transistor; forming a first backside via electrically connected to the first transistor; forming a second backside via electrically connected to the second transistor; depositing a dielectric layer over the first backside via and the second backside via; forming a first conductive line in the dielectric layer, the first conductive line being a power rail electrically connected to the first transistor through the first backside via; and forming a second conductive line in the dielectric layer, the second conductive line being a signal line electrically connected to the second transistor through the second backside via.Type: ApplicationFiled: December 1, 2023Publication date: March 21, 2024Inventors: Shang-Wen Chang, Yi-Hsun Chiu, Cheng-Chi Chuang, Ching-Wei Tsai, Wei-Cheng Lin, Shih-Wei Peng, Jiann-Tyng Tzeng
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Publication number: 20240096701Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.Type: ApplicationFiled: May 17, 2023Publication date: March 21, 2024Inventors: Chun-Yuan CHEN, Huan-Chieh SU, Ching-Wei TSAI, Shang-Wen CHANG, Yi-Hsun CHIU, Chih-Hao WANG
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Publication number: 20240088141Abstract: A device includes a first semiconductor strip and a second semiconductor strip extending longitudinally in a first direction, where the first semiconductor strip and the second semiconductor strip are spaced apart from each other in a second direction. The device also includes a power supply line located between the first semiconductor strip and the second semiconductor strip. A top surface of the power supply line is recessed in comparison to a top surface of the first semiconductor strip. A source feature is disposed on a source region of the first semiconductor strip, and a source contact electrically couples the source feature to the power supply line. The source contact includes a lateral portion contacting a top surface of the source feature, and a vertical portion extending along a sidewall of the source feature towards the power supply line to physically contact the power supply line.Type: ApplicationFiled: November 16, 2023Publication date: March 14, 2024Inventors: Yi-Hsiung Lin, Yi-Hsun Chiu, Shang-Wen Chang
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Publication number: 20230046951Abstract: A system for assessing risks of T2DM complications includes: a data acquisition module obtaining and inputting assessment parameters of a patient with T2DM into a risk assessment module; and the risk assessment module inputting the assessment parameters into a number of risk equations and using it to calculate risk values of the complication occurring after a period of time. The risk equation for all diabetic complications (i,j) is: ra(t,i,j)=1?exp{[H(t0)?H(t1)]Ca(t,i,j)} ra(t, i, j) is the risk value for the patient to develop the complication j from the current disease i at age t. t0 is an age of one patient at a state of the disease i. t1 is an age of the patient after the period of time. t is an age between t0 and t1. H(t0) and H(t1) are hazards of the complication occurring at the age t0 and the age t1, respectively.Type: ApplicationFiled: August 3, 2022Publication date: February 16, 2023Applicants: National Chengchi University, Kaohsiung Medical University, National Health Research InstitutesInventors: Ming-Yen Lin, Jia-Sin Liu, Ping-Hsun Wu, Yi-Wen Chiu, Chih-Cheng Hsu, Shang-Jyh Hwang, Hsing Luh
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Patent number: 11494040Abstract: A stacking structure includes a substrate, a silver nanowire layer provided on a top of the substrate, and a metal layer provided on a top of the silver nanowire layer. The silver nanowire layer includes a plurality of silver nanowires and an indium tin oxide (ITO) covered on the plurality of silver nanowires. The silver nanowire layer has an overall thickness that is 2.35 to 24 times as thick as a thickness of the ITO. A touch sensor including the above described stacking structure is also disclosed.Type: GrantFiled: April 8, 2021Date of Patent: November 8, 2022Assignee: Cambrios Film Solutions CorporationInventors: Chung-Chin Hsiao, Siou-Cheng Lien, Yi-Wen Chiu, Chi-Fan Hsiao
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Publication number: 20220326807Abstract: A stacking structure includes a substrate, a silver nanowire layer provided on a top of the substrate, and a metal layer provided on a top of the silver nanowire layer. The silver nanowire layer includes a plurality of silver nanowires and an indium tin oxide (ITO) covered on the plurality of silver nanowires. The silver nanowire layer has an overall thickness that is 2.35 to 24 times as thick as a thickness of the ITO. A touch sensor including the above described stacking structure is also disclosed.Type: ApplicationFiled: April 8, 2021Publication date: October 13, 2022Inventors: Chung-Chin Hsiao, Siou-Cheng Lien, Yi-Wen Chiu, Chi-Fan Hsiao
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Publication number: 20220283653Abstract: A stacking structure includes a substrate, a silver nanowire layer disposed on a top of the substrate, and a metal layer disposed on a top of the silver nanowire layer. The silver nanowire layer includes a plurality of silver nanowires and a protective coating covering the silver nanowires. The silver nanowire layer has a thickness ranging from 40 nm to 120 nm. A touch sensor including the above-described stacking structure is also disclosed.Type: ApplicationFiled: March 4, 2021Publication date: September 8, 2022Inventors: Chung-Chin Hsiao, Siou-Cheng Lien, Yi-Wen Chiu, Chia-Yang Tsai
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Patent number: 11360622Abstract: A stack structure includes: a substrate, a copper layer disposed on the substrate, a migration-proof layer disposed on the copper layer, and a silver-nanowire layer disposed on the migration-proof layer, wherein the migration-proof layer is made of materials between copper and silver in galvanic series. A touch sensor includes the stack structure.Type: GrantFiled: October 16, 2020Date of Patent: June 14, 2022Assignee: Cambrios Film Solutions CorporationInventors: Chung-Chin Hsiao, Siou-Cheng Lien, Yi-Wen Chiu, Chia-Yang Tsai
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Publication number: 20220164064Abstract: A transparent conductive film and a touch panel comprising the same are disclosed. The transparent conductive film comprises a substrate and a conductive mesh film disposed on the substrate. The conductive mesh film comprises a plurality of cross-bonded silver nanowires, and a rate of change of resistance of the conductive mesh film is smaller than 1% after bending the transparent conductive film over 250,000 times.Type: ApplicationFiled: November 20, 2020Publication date: May 26, 2022Inventors: Chung-Chin Hsiao, Siou-Cheng Lien, Chia-Yang Tsai, Yi-Wen Chiu
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Publication number: 20220121320Abstract: A stack structure includes: a substrate, a copper layer disposed on the substrate, a migration-proof layer disposed on the copper layer, and a silver-nanowire layer disposed on the migration-proof layer, wherein the migration-proof layer is made of materials between copper and silver in galvanic series. A touch sensor includes the stack structure.Type: ApplicationFiled: October 16, 2020Publication date: April 21, 2022Inventors: Chung-Chin Hsiao, Siou-Cheng Lien, Yi-Wen Chiu, Chia-Yang Tsai
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Patent number: 11294513Abstract: A transparent conductive film and method for making transparent conductive film and touch panel are disclosed. The transparent conductive film includes a substrate and a conductive mesh film. The substrate has a first surface. The conductive mesh film is formed on the first surface of substrate, and the conductive mesh film includes a plurality of silver nanowires. The conductive mesh film includes a plurality of meshes, and the meshes comprise a plurality of traces and a plurality of blank areas. The sheet resistance of the conductive mesh film is 5 ?/sq to 30 ?/sq, the width of each of the traces is 1 ?m to 10 ?m, and a transparency of the conductive mesh film to visible light is greater than 85%.Type: GrantFiled: November 20, 2020Date of Patent: April 5, 2022Assignee: Cambrios Film Solutions CorporationInventors: Chung-Chin Hsiao, Siou-Cheng Lien, Yi-Wen Chiu, Chia-Yang Tsai
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Publication number: 20210200383Abstract: The present disclosure discloses an etching solution, a touch panel, and a manufacturing method thereof. The manufacturing method of the touch panel includes the following operations. A substrate is provided, in which the substrate has a visual area and a peripheral area. A metal layer and a metal nanowire layer are disposed, in which a first portion of the metal nanowire layer is disposed in the visual area, and a second portion of the metal nanowire layer and the metal layer are disposed in the peripheral area. A patterning step is performed. The patterning step includes simultaneously forming multiple peripheral wires and the second portion of the metal nanowire layer by using the etching solution for etching the metal layer and the metal nanowire layer.Type: ApplicationFiled: December 18, 2020Publication date: July 1, 2021Inventors: Chung-Chin Hsiao, Siou-Cheng Lien, Chi-Fan Hsiao, Chia-Yang Tsai, Yi-Wen Chiu
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Patent number: 10963118Abstract: An electrode structure and a touch panel including the electrode structure are provided. The electrode structure includes a membrane layer and a metallic nanowires layer having metallic nanowires. A first portion of the metallic nanowires layer is covered by the membrane layer, and a second portion of the metallic nanowires layer is exposed out of the membrane layer. The membrane layer is made of a copolymer formed by mixing two or more materials having different functional groups.Type: GrantFiled: February 11, 2020Date of Patent: March 30, 2021Assignee: Cambrios Film Solutions CorporationInventors: Chung-Chin Hsiao, Siou-Cheng Lien, Chia-Yang Tsai, Yi-Wen Chiu, Shu-Ping Hsu
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Publication number: 20200272263Abstract: An electrode structure and a touch panel including the electrode structure are provided. The electrode structure includes a membrane layer and a metallic nanowires layer having metallic nanowires. A first portion of the metallic nanowires layer is covered by the membrane layer, and a second portion of the metallic nanowires layer is exposed out of the membrane layer. The membrane layer is made of a copolymer formed by mixing two or more materials having different functional groups.Type: ApplicationFiled: February 11, 2020Publication date: August 27, 2020Inventors: Chung-Chin HSIAO, Siou-Cheng LIEN, Chia-Yang TSAI, Yi-Wen CHIU, Shu-Ping HSU
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Publication number: 20190371004Abstract: The present invention provides a method and system for determining skin color, method for generating an ICC profile and an image capturing device. The method for determining a skin color includes: providing an image capturing device including a light sensing module and a light distributing module, in which the light distributing module includes a light source and a light isolation tube, the light isolation tube has a first end connected to the light sending module and a second end away from the light source, the light source is disposed on the first end, and the second end has an opening; capturing a first image of an area under test of a human body using the image capturing device, wherein the opening adheres to the area under test such that the image capturing device forms a darkroom environment with respect to the area under test.Type: ApplicationFiled: June 25, 2018Publication date: December 5, 2019Inventors: YU-HSUAN LIN, ROU-JHEN CHEN, CHENG-RU LI, KUO-CHENG HUANG, MING-YEN LIN, YI-WEN CHIU, SHANG-JYH HWANG, CHIH-YI YANG
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Patent number: 9620963Abstract: A portable electronic device is provided. The portable electronic device includes a host, a power adapter and a signal transmission interface. The host generates state information according to present operating state, and the power adapter is used to provide a voltage to the host. The power adapter receives the state information of the host via the signal transmission interface, and adjusts the output voltage according to the state information. By transmitting information between the host and the power adapter, the power adapter can be adjusted according to the operating state of the host. Moreover, the host can adjust the operating state according to the specification information of the power adapter. Consequently, the power consuming of the portable electronic device has best efficiency thus to reduce carbon emission.Type: GrantFiled: April 29, 2014Date of Patent: April 11, 2017Assignee: ASUSTeK COMPUTER INC.Inventors: Yao-Hwa Chen, Yi-Wen Chiu, Sheng-Wei Hsiao
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Publication number: 20160336354Abstract: A display panel includes an active device array substrate, an opposite substrate, a display medium and a sealant. The active device array substrate includes a substrate, an active device array, a passivation layer and an enhancement layer. A material of the enhancement layer is different from a material of the passivation layer. The opposite substrate is disposed opposite to the active device array substrate. The display medium is disposed between the active device array substrate and the opposite substrate. The sealant is disposed between the active device array substrate and the opposite substrate and surrounds the display medium. An end of the sealant directly contacts the enhancement layer, and a material of the enhancement layer is the same as a material of the sealant.Type: ApplicationFiled: July 21, 2015Publication date: November 17, 2016Inventors: Yi-Wen Chiu, Yen-Wei Liu, Ji-Yi Chiou, Ming-Hsiang Lai, Sheng-Fa Liu, Ching-Yu Huang, Yi-Fan Niu
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Publication number: 20160052250Abstract: A frit encapsulation apparatus includes a carriage, a mask, a laser light source and a pressure element. The carriage is disposed over a first substrate. The mask is disposed in the carriage and has a light-transmitting region. The laser light source is disposed in the carriage and over the mask and is configured to provide laser light through the light-transmitting region of the mask and the first substrate therebeneath to heat the frit beneath the first substrate. The pressure element is disposed beneath the carriage and is configured to provide a pressure to the first substrate, such that the first substrate is adhered to a second substrate by the heated frit, in which the pressure element is not overlapped with a vertical projection of the light-transmitting region on the first substrate.Type: ApplicationFiled: October 29, 2014Publication date: February 25, 2016Inventors: Yi-Wen Chiu, Sheng-Fa Liu, Ji-Yi Chiou, Ching-Yu Huang, Ming-Hsiang Lai, Yen-Wei Liu