Abstract: A package structure including a packaging substrate, a semiconductor device, passive components, a lid, and a dam structure is provided. The semiconductor device is disposed on and electrically connected to the packaging substrate. The passive components are disposed on the packaging substrate, wherein the semiconductor device is surrounded by the passive components. The lid is disposed on the packaging substrate, and the lid covers the semiconductor device and the passive components. The dam structure is disposed between the packaging substrate and the lid, wherein the dam structure covers the passive components and laterally encloses the semiconductor device.

Abstract: A semiconductor device includes a bonding structure having a top, a back opposite the top, a first side and a second side opposite the first side, wherein the first side and the second side between the top and the back; and columnar structures over the back of the bonding structure. The columnar structures include a first columnar structure nearest to the first side and a second columnar structure nearest to the second side. The semiconductor device further includes a first electrode disposed over at least portion of the columnar structures and electrically connected to at least one of the columnar structures, and a second electrode disposed over at least portion of the back of the bonding structure and electrically connected to at least one of the columnar structures.

Abstract: A method, computer system, and a computer program product for risk analysis is provided. The present invention may include receiving an access request. The present invention may include analyzing a matrix barcode associated with the access request. The present invention may include validating the matrix barcode. The present invention may include providing a validation status to a user.

Abstract: A semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

Abstract: A fugitive gas detection system includes an inertial measurement assembly that measures a change in position of the inlet of a gas analyzer and applies a time slip to concentration data detected by an analyzer to generate a time series of the concentration of the gas in three-dimensional space. Applying statistical methods, the relative location of the source of the fugitive gas can be established from the time series. Additionally, in some embodiments, the data may be interpolated to establish a map of a plume of the fugitive gas.

Abstract: A semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

Abstract: The present invention relates to a method of treating moderate or severe symptoms of COVID-19 using a plant composition. The plant composition comprises Prepared Monkshood Daughter Root (Aconitum carmichaelii), Fragrant Solomonseal Rhizome (Polygonatum odoratum), Indian Bread (Poria cocos), Pinellia tuber (Pinellia ternata), Oriental Wormwood Herb (Artemisia scoparia), Scutellaria Root (Scutellaria baicalensis), Mongolian Snakegourd Fruit (Trichosanthes kirilowii), Magnolia Bark (Magnolia officinalis), Heartleaf Houttuynia Herb (Houttuynia cordata), and Baked Licorice Root and Rhizome (Glycyrrhiza glabra), which is used as a traditional Chinese medicine composition.

Abstract: A fugitive gas detection system includes an inertial measurement assembly that measures a change in position of the inlet of a gas analyzer and applies a time slip to concentration data detected by an analyzer to generate a time series of the concentration of the gas in three-dimensional space. Applying statistical methods, the relative location of the source of the fugitive gas can be established from the time series. Additionally, in some embodiments, the data may be interpolated to establish a map of a plume of the fugitive gas.

Abstract: A fugitive gas detection system includes an inertial measurement assembly that measures a change in position of the inlet of a gas analyzer and applies a time slip to concentration data detected by an analyzer to generate a time series of the concentration of the gas in three-dimensional space. Applying statistical methods, the relative location of the source of the fugitive gas can be established from the time series. Additionally, in some embodiments, the data may be interpolated to establish a map of a plume of the fugitive gas.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface.

Abstract: A fugitive gas detection system includes an inertial measurement assembly that measures a change in position of the inlet of a gas analyzer and applies a time slip to concentration data detected by an analyzer to generate a time series of the concentration of the gas in three-dimensional space. Applying statistical methods, the relative location of the source of the fugitive gas can be established from the time series. Additionally, in some embodiments, the data may be interpolated to establish a map of a plume of the fugitive gas.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface.

Abstract: A semiconductor device includes a first reflective structure, a second reflective structure and a cavity region between the first reflective structure and the second reflective structure. The cavity region includes a first surface and a second surface opposite to the first surface. The semiconductor device further includes a first electrode on the first surface and electrically connected to the first reflective structure. The semiconductor device further includes a second electrode on the first surface and electrically connected to the second reflective structure. The semiconductor device further includes a first conductive layer on the second surface of the cavity region and including a hole formed therethrough.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.

Abstract: A light emitting device driver circuit drives a light emitting circuit. The light emitting device driver circuit includes a switching power supply circuit and a current regulator circuit. The current regulator circuit includes a multi-level DC current control circuit, which individually determines whether plural DC current supply circuits are conducted or not conducted according to a DC dimmer signal to supply a DC current to the light emitting circuit; and a switching current control circuit, which operates a PWM switch according to a PWM dimmer signal to supply a PWM current to the light emitting device circuit. The DC current and the PWM current are summed together to form a total current flowing through the light emitting device circuit so that the brightness of the light emitting device circuit is adjustable according to the DC dimmer signal and the PWM dimmer signal.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.

Abstract: The present disclosure provides a semiconductor device including a first reflective structure, a second reflective structure and a cavity region between the first reflective structure and the second reflective structure. The cavity region includes a first surface, a second surface opposite to the first surface and a sidewall between the first surface and the second surface. The first surface is closer to the first reflective structure than the second reflective structure. The semiconductor device further includes a first electrode electrically connected to the first reflective structure. The semiconductor device further includes a second electrode electrically connected to the second reflective structure. The second electrode includes a pad portion and a side portion extending from the pad portion. The first electrode and the pad portion of the second electrode are on the first surface, and the side portion of the second electrode covers the sidewall of the cavity region.

Abstract: A light-emitting device is provided. The light-emitting device comprises: an epitaxial structure comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode on the epitaxial structure; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer.