Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor stack, a trench formed in the semiconductor stack, a current confinement layer, a first electrode and a second electrode. The semiconductor stack includes a first reflective structure, a second reflective structure, and a cavity region. The cavity is between the first reflective structure and the second reflective structure and has a first surface and a second surface opposite to the first surface. The current confinement layer is in the second reflective structure. The first electrode and the second electrode are on the first surface.

Abstract: A semiconductor device includes a first reflective structure, a second reflective structure and a cavity region between the first reflective structure and the second reflective structure. The cavity region includes a first surface and a second surface opposite to the first surface. The semiconductor device further includes a first electrode on the first surface and electrically connected to the first reflective structure. The semiconductor device further includes a second electrode on the first surface and electrically connected to the second reflective structure. The semiconductor device further includes a first conductive layer on the second surface of the cavity region and including a hole formed therethrough.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.

Abstract: A light emitting device driver circuit drives a light emitting circuit. The light emitting device driver circuit includes a switching power supply circuit and a current regulator circuit. The current regulator circuit includes a multi-level DC current control circuit, which individually determines whether plural DC current supply circuits are conducted or not conducted according to a DC dimmer signal to supply a DC current to the light emitting circuit; and a switching current control circuit, which operates a PWM switch according to a PWM dimmer signal to supply a PWM current to the light emitting device circuit. The DC current and the PWM current are summed together to form a total current flowing through the light emitting device circuit so that the brightness of the light emitting device circuit is adjustable according to the DC dimmer signal and the PWM dimmer signal.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.

Abstract: The present disclosure provides a semiconductor device including a first reflective structure, a second reflective structure and a cavity region between the first reflective structure and the second reflective structure. The cavity region includes a first surface, a second surface opposite to the first surface and a sidewall between the first surface and the second surface. The first surface is closer to the first reflective structure than the second reflective structure. The semiconductor device further includes a first electrode electrically connected to the first reflective structure. The semiconductor device further includes a second electrode electrically connected to the second reflective structure. The second electrode includes a pad portion and a side portion extending from the pad portion. The first electrode and the pad portion of the second electrode are on the first surface, and the side portion of the second electrode covers the sidewall of the cavity region.

Abstract: A light-emitting device is provided. The light-emitting device comprises: an epitaxial structure comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode on the epitaxial structure; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer.

Abstract: A light-emitting device is provided. The light-emitting device comprises: an epitaxial structure comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode on the epitaxial structure; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer.

Abstract: A light-emitting device is provided. The light-emitting device is configured to emit a radiation and comprises: a substrate; an epitaxial structure on the substrate and comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer; and the light-emitting device is devoid of an oxidized layer and an ion implanted layer in the second DBR stack.

Abstract: A light-emitting device is provided. The light-emitting device is configured to emit a radiation and comprises: a substrate; an epitaxial structure on the substrate and comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer; and the light-emitting device is devoid of an oxidized layer and an ion implanted layer in the second DBR stack.

Abstract: A semiconductor device has a semiconductor die with composite bump structures over a surface of the semiconductor die. A conductive layer is formed over the substrate. The conductive layer has a channel in an interconnect site of the conductive layer. The channel extends beyond a footprint of the composite bump structures. The semiconductor die is disposed over the substrate. The bump material of the composite bump structures is melted. The composite bump structures are pressed over the interconnect site of the conductive layer so that the melted bump material flows into the channel. Electrical continuity between the composite bump structures and conductive layer is detected by a presence of the bump material in the channel. No electrical continuity between the composite bump structures and conductive layer is detected by an absence of the bump material in the channel. The electrical continuity can be detected by visual inspection or X-ray.

Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.

Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.

Abstract: A resonant converter with power factor correction includes a power-obtaining circuit, an energy-storage element and an energy-transferred circuit. The power-obtaining circuit is used for receiving an input line voltage. The energy-storage element is coupled between the power-obtaining circuit and the energy-transferred circuit. The energy-transferred circuit is used for generating an output power. In a first time period, based on a first control signal, the energy-storage element and the power-obtaining circuit operate a soft switching so that the energy-storage element is charged to obtain the input line power and generate an energy-storage voltage. In a second time period, based on a second control signal, the energy-storage element and the energy-transferred circuit operate a soft switching so that the energy-storage element is discharged to make the energy-storage voltage converted into the output power.

Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.

Abstract: A common-core power factor correction resonant converter includes an energy-transforming circuit. The energy-transforming circuit receives an input line voltage and generates an output power. The energy-transforming circuit includes a coupling inductor and a charge-storage capacitor. The coupling inductor and the charge-storage capacitor are charged by the input line voltage in response to a control signal, so as to generate a charge-storage capacitor voltage. When the charge-storage capacitor voltage is charged to a preset voltage level, the coupling inductor and the charge-storage capacitor are discharged according to the control signal. Then, the energy in the coupling inductor and the charge-storage capacitor is transformed to the output load and provide the output voltage or current regulation.

Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.

Abstract: The disclosure provides a method for controlling an equivalent resistance of a converter. The method includes receiving a power source input signal, generating a first control signal according to a voltage level and a state of the power source input signal to adjust an equivalent resistance of the voltage conversion module and cause the voltage conversion module to operate in the damper mode or the converter mode, when the voltage conversion module operates in the converter mode converting the power source input signal to an output signal, and when the voltage conversion module operates in the damper mode detecting the voltage level or the current level of the power source input signal, and adjusting the equivalent resistance so that the voltage conversion module could operate in the bleeder mode or the converter mode to convert the power source input signal to the output signal.