Abstract: Embodiments disclosed herein include electronic packages with chocked flow cooling. In an embodiment, an electronic package may comprise a package substrate, a die electrically and mechanically coupled to the package substrate, and a lid over the die. In an embodiment, the lid has a first opening and a second opening that is opposite from the first opening. In an embodiment, the electronic package may further comprise a coolant plate covering the first opening. In an embodiment, the coolant plate comprises a first surface facing away from the die and a second surface facing the die, and a plurality of vents from the first surface to the second surface. In an embodiment, the first openings of the plurality of vents have a first dimension and second openings of the plurality of vents have a second dimension that is smaller than the first dimension.

Abstract: A method of metal gapfill including depositing a metal layer on a dielectric layer present on a field and/or in an opening of a feature via plasma enhanced atomic layer deposition utilizing a metal halide precursor and a plasma comprising hydrogen and a noble gas; and depositing a metal gapfill material on the field and in the opening directly over the metal layer, wherein the metal gapfill material completely fills the opening.

Abstract: The present disclosure relates to systems, non-transitory computer-readable media, and methods for executing generative models for private conversations within protected inference environments. In particular, in some embodiments, the disclosed systems receive an encrypted chat message marked with a private status. In addition, in some embodiments, the disclosed systems generate a decrypted chat message by decrypting the encrypted chat message using a shared session key based on a hardware-backed attestation indicating server-side processing by a trusted execution environment. Moreover, in some embodiments, the disclosed systems generate a re-encrypted chat message by re-encrypting the decrypted chat message with an additional session key established for a private engine instance.

Abstract: A non-transitory, processor-readable medium stores instructions that, when executed by a processor, cause the processor to receive video-derived detection data associated with a plurality of persons. For a first person from the plurality of persons, a portion of the video-derived detection data associated with the first person is assigned to a first motion track based on a motion model, and a closeup image of the first person is generated based on the portion of video-derived detection data. A quality score is generated based on the closeup image, and the closeup image is assigned to the first motion track based on the quality score. The first motion track is selected from a plurality of motion tracks associated with the plurality of persons. Using a neural network, first identity data is generated based on the closeup image, and the first motion track is updated based on the first identity data.

Abstract: Embodiments of a purge ring for use in a process chamber are provided herein. In some embodiments, a purge ring includes: an annular body having an inner portion and an outer portion, wherein the inner portion includes an inner surface of the annular body, the inner surface comprising a first inner sidewall, a second inner sidewall, and a third inner sidewall, wherein the inner portion has an upper inner notch that defines the first inner sidewall and a lower inner notch that defines the second inner sidewall, wherein a third inner sidewall is disposed between the first inner sidewall and the second inner sidewall, and wherein the first inner sidewall and the second inner sidewall are disposed radially outward of the third inner sidewall.

Abstract: A method and related system operations includes, determining, for each respective frame of a frame sequence, a respective bounding box that surrounds a respective sub-image of the respective frame, determining a respective string and respective confidence values associated with the respective string based on the respective sub-image, updating the tracklet to comprise the respective bounding box based on the respective string and at least one string generated by the object recognition model for a previous frame, and updating a voting table by adding the respective confidence values to the voting table. The method also includes generating an aggregated string based on the voting table by, for a set of positions of the aggregated string, determining a character associated with a maximum confidence value indicated by the voting table and associating the aggregated string with the tracklet in a data structure.

Abstract: This application provides example electronic devices. One example electronic device includes a first display, a first sound-emitting area, a second sound-emitting area, and a second display. The first display includes a first display area and a second display area, and when the electronic device is in folded state, the first display area of the first display is opposite to the second display area of the first display. The first display area of the first display and the second display are stacked. The first display is disposed on a first surface of the electronic device, the second display is disposed on a second surface of the electronic device, the first surface is connected to the second surface through a bezel, the first sound-emitting area is provided on the first surface and/or the bezel, and the second sound-emitting area is provided on the second surface and/or the bezel.

Abstract: Embodiments described herein generally relate to semiconductor device fabrication. More specifically, embodiments of the present disclosure relate to methods of removing metal oxides during semiconductor device manufacturing. The method includes performing a first soak process on the semiconductor device structure, forming a metal fill material in at least one feature, and performing a second soak process on the semiconductor device structure. The semiconductor device structure includes at least one feature formed in a dielectric layer of the semiconductor device structure. The first soak process includes flowing a first precursor gas over the at least one feature. The metal fill material is formed by partially filling the at least one feature where a gap region forms between a sidewall of the at least one feature and the metal fill material. The second soak process includes flowing a second precursor gas over the at least one feature and the metal fill material.

Abstract: A method and apparatus for tungsten gap-fill in semiconductor devices are provided. The method includes performing a gradient oxidation process to oxidize exposed portions of a liner layer, wherein the gradient oxidation process preferentially oxidizes an overhang portion of the liner layer, which obstructs or blocks top openings of one or more features formed within a field region of a substrate. The method further includes performing an etchback process to remove or reduce the oxidized overhang portion of the liner layer, exposing the liner layer to a chemical vapor transport (CVT) process to remove metal oxide remaining from the gradient oxidation process and the etchback process, and performing a tungsten gap-fill process to fill or partially fill the one or more features.

Abstract: An adjuvant composition is shown and described herein. The adjuvant composition is suitable for use in conjunction with agrochemical compositions and for application to agricultural substrates. The adjuvant composition comprises: (i) an unsaturated oil and/or a transesterified unsaturated oil; (ii) a trisiloxane alkoxylate surfactant, (iii) a vinyl lactam polymer and optionally (iv) an alcohol. The compositions can function to enhance one or more properties such as, for example, rainfastness spreadability, emulsion stability, and/or reduction in the formation of driftable fines.

Abstract: According to one aspect, spatial action localization in the future (SALF) may include feeding a frame from a time step of a video clip through an encoder to generate a latent feature, feeding the latent feature and one or more latent features from one or more previous time steps of the video clip through a future feature predictor to generate a cumulative information for the time step, feeding the cumulative information through a decoder to generate a predicted action area and a predicted action classification associated with the predicted action area, and implementing an action based on the predicted action area and the predicted action classification. The encoder may include a 2D convolutional neural network (CNN) and/or a 3D-CNN. The future feature predictor may be based on an ordinary differential equation (ODE) function.

Abstract: Embodiments of the disclosure include a method of depositing a gap-fill material on a semiconductor substrate, comprising: forming a passivation layer on a surface of a contact structure by introducing a hydrogen gas and an oxygen gas and/or water from a remote plasma source to a processing chamber, and depositing a metal gap-fill material over a portion of the passivation layer to fill the feature formed in the surface of the semiconductor substrate. The contact structure includes a feature formed in a surface of the semiconductor substrate. The feature comprises an opening that is defined by a substrate, a lower dielectric material disposed over the substrate, and an upper dielectric material disposed over the lower dielectric material, and the passivation layer is formed over the substrate, the lower dielectric material, and the upper dielectric material.

Abstract: Embodiments described herein generally relate to methods for forming low resistivity contacts for semiconductor device formation. More particularly, embodiments provide methods for selective etching of materials used to form a portion of an electrical contact formed on semiconductor substrates. In some embodiments, a method includes providing a substrate including a gate material and an insulating material disposed at least partially around the gate material, the insulating material including a high-k dielectric. The substrate is exposed to a plasma including a gas that includes one or more of H2, Ar, Xe, Ne, and Kr. The method further includes etching the high-k dielectric by providing a chlorine-containing precursor while heating the substrate to a temperature of about 450° C. or less.

Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide methods to reduce the resistance of the work function layer of an electronic device, as well as using a low resistivity metal for filling the gate.

Abstract: A foldable display device includes a first frame, a second frame, a rotating shaft assembly, a flexible heat sink and a flexible circuit board. The flexible heat sink and the flexible circuit board passes through the rotating shaft assembly, and the rotating shaft assembly includes a shaft seat, a door plate, a first support plate, and a second support plate. Two opposite ends of the flexible heat sink are connected to the first frame and the second frame, and two opposite ends of a part of the flexible heat sink in the rotating shaft assembly are respectively fastened to a first fastening surface that is of the first support plate and that faces the shaft seat and a second fastening surface that is of the second support plate and that faces the shaft seat.

Abstract: A method is performed by a wireless client configured to communicate with wireless infrastructure equipment. The method comprises: upon connecting to the wireless infrastructure equipment without authenticating to the wireless infrastructure equipment, receiving from the wireless infrastructure equipment an individual probe protection key (IPPK) unique to the wireless client; storing the IPPK; sending to the wireless infrastructure equipment a probe request; receiving from the wireless infrastructure equipment a probe response that includes a message integrity check; validating the message integrity check using the IPPK; and accepting or rejecting the probe response depending on a result of validating.

Abstract: A furniture compression transportation and rapid assembly method based on a compressible support element, comprising the following steps: S1. place a support element with compression and rebound capabilities into a central cavity of a furniture base carrier; S2. vacuum-compress and then roll-pack to form a compressed and rolled state; S3. transport to the user's site; S4. after receiving the product, the user removes the support element; S5. place a functional component into the central cavity of the furniture base carrier after the support element is removed. The invention minimizes volume and ensures structural protection during the transportation phase by placing the compressible and resilient support element into the central cavity of the furniture base carrier, followed by vacuum compression and roll-packing. Once delivered, the user only needs to remove the support element and replace it with a functional component to form the finished furniture product.