Abstract: A magnetic resonance diffusion tensor imaging method and corresponding device. The method includes acquiring omnidirectionally sampled diffusion weighted images of a plurality of training samples; performing diffusion tensor model fitting and undersampling for the omnidirectionally sampled diffusion weighted images of each training sample to obtain an omnidirectionally sampled diffusion tensor image and an undersampled diffusion weighted image; training a deep learning network, with the omnidirectionally sampled diffusion tensor images of the plurality of training samples as training targets and the undersampled diffusion weighted images as training data; acquiring undersampled diffusion weighted images of a target object; and inputting the undersampled diffusion weighted images of target objects into the trained deep learning network to obtain the predicted omnidirectionally sampled diffusion tensor images of the target objects. Also, a fiber tracking method and corresponding device.

Abstract: The present disclosure provides a glass panel of a display screen, of which each side bulges outwards gradually with respect to a connection line of opposing ends of the side, with a vertical distance from a point on the side between an end and a midpoint of the side to the connection line of the opposing ends of the side increasing gradually in a direction from the end to the midpoint.

Abstract: A method, includes: applying a read voltage at a first read voltage level to read a memory cell for detecting a resistance level of the memory cell; applying the read voltage at a second read voltage level, different from the first read voltage level, to read the memory cell for determining a waveform type has been utilized to program the memory cell; recognizing data bits stored in the memory cell. The data bits stored in the memory cell comprise a first data bit and at least one second data bit. The first data bit is recognized according to the waveform type and is irrelevant with the resistance level. The at least one second data bit is recognized according to the resistance level and is irrelevant with the waveform type. A device is also disclosed herein.

Abstract: A method and structure for doping source and drain (S/D) regions of a PMOS and/or NMOS FinFET device are provided. In some embodiments, a method includes providing a substrate including a fin extending therefrom. In some examples, the fin includes a channel region, source/drain regions disposed adjacent to and on either side of the channel region, a gate structure disposed over the channel region, and a main spacer disposed on sidewalls of the gate structure. In some embodiments, contact openings are formed to provide access to the source/drain regions, where the forming the contact openings may etch a portion of the main spacer. After forming the contact openings, a spacer deposition and etch process may be performed. In some cases, after performing the spacer deposition and etch process, a silicide layer is formed over, and in contact with, the source/drain regions.

Abstract: A display apparatus includes: a substrate including a display area in which a plurality of pixel areas is arranged, and a peripheral area adjacent to the display area and in which a pad portion including a plurality of pad electrodes is arranged; a first signal line and a second signal line in the display area on the substrate; a first connecting line electrically connected to the first signal line and connected to the pad portion, at least a portion of the first connecting line being in the display area; and a dummy line on a same layer as the first connecting line.

Abstract: A smart wearable device includes a detection apparatus and a case, the detection apparatus specifically includes one set of measuring parts and a plurality of sets of light emitting parts; the one set of measuring parts and the plurality of sets of light emitting parts are inlaid into the case and arranged into a polygon, where each of the plurality of sets of light emitting parts and the one set of measuring parts each occupies one of a plurality of angles of the polygon, and a central position of the polygon is at a specified distance to each angle of the polygon. A specific embodiment of the present invention provides a smart wearable device. One set of measuring parts and a plurality of sets of light emitting parts are disposed into a case and arranged into a polygon.

Abstract: A method for manufacturing an integrated circuit is provided. The method includes forming first and second semiconductor fins; forming first and second dielectric fin sidewall structures on opposite sidewalls of the first semiconductor fin, wherein the first dielectric fin sidewall structure is higher than the second dielectric fin sidewall structure, and the second dielectric fin sidewall structure is between the first and second semiconductor fins; recessing at least a portion of the first semiconductor fin between the first and second dielectric fin sidewall structures until a top of the recessed portion of the first semiconductor fin is lower than a top of the first dielectric fin sidewall structure; and forming a first epitaxy structure on the recessed portion of the first semiconductor fin.

Abstract: The present invention provides novel compounds of Formula (I) and pharmaceutically acceptable salts, solvates, hydrates, tautomers, stereoisomers, isotopically labeled derivatives, and compositions thereof. Also provided are methods and kits involving the compounds or compositions for treating or preventing proliferative diseases, e.g., cancers (e.g., breast cancer, prostate cancer, lymphoma, lung cancer, pancreatic cancer, ovarian cancer, neuroblastoma, or colorectal cancer), benign neoplasms, angiogenesis, inflammatory diseases, fibrosis (e.g., polycystic kidney disease), autoinflammatory diseases, and autoimmune diseases in a subject.

Abstract: An aqueous alkaline chemical mechanical polishing composition includes a quaternary phosphonium compound having aromatic groups which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing. The chemical mechanical polishing composition is stable.

Abstract: A method of generating diffraction images based on wave equations includes generating a source wavefield and a receiver wavefield. Based on the source wavefield, a first source wavefield propagating in a first direction and a second source wavefield propagating in a second direction are generated. Based on the receiver wavefield, a first receiver wavefield propagating in the first direction and a second receiver wavefield propagating in the second direction are generated. A first seismic image is generated based on the first source wavefield and the first receiver wavefield. A second seismic image is generated based on the second source wavefield and the second receiver wavefield. A final seismic image is generated based on the first seismic image and the second seismic image.

Abstract: A communication device, processing device or method constructs M RLC PDUs including M RLC SDUs, respectively, where M is larger than 1; submits, for a transmission opportunity, only L RLC PDUs for L RLC SDUs with lowest L SNs among the M RLC PDUs to a MAC layer, where L<M and the L RLC PDUs include a first RLC PDU having a poll to trigger status reporting at a receiving device; transmits the L RLC PDUs to the receiving device; constructs a second RLC PDU including a second RLC SDU having a highest SN among SNs of RLC SDUs submitted to the MAC layer, when the poll retransmission timer started upon submitting the first RLC PDU having the poll expires and no new RLC SDU or RLC SDU segment can be transmitted.

Abstract: Embodiments of the present disclosure provide a method for skinning a character model, a device for skinning a character model, a computer readable medium, and an electronic device, and relate to the field of computer technology. The method comprises: obtaining a first character model and a corresponding skeleton structure; determining a vertex attribute of the first character model and a connecting relationship between the vertices; performing a nonlinear transformation process on the vertex attribute to obtain the first feature, and performing a graph convolution process on the connecting relationship and the first feature to obtain a second feature; determining a global feature and a local feature of the character model according to the second feature; and determining a target feature representing a binding relationship between the first character model and the skeleton hierarchy according to the global feature and the local feature.

Abstract: A filter includes multiple filter circuits. The filter circuits are coupled in series between an input terminal and an output terminal, to generate an output signal according to an input signal. One of the filter circuits operates as an active filter circuit or a passive filter circuit according to amplitude of the input signal.

Abstract: A filter base for receiving a complementary mating filter housing assembly. The filter base includes a base platform having fluid ingress and egress stanchions, and a wire harness assembly including a connector housing integral with or connected to the base platform for establishing an electrical connection between the filter base and the filter housing assembly. The wire harness assembly includes conductors extending between first and second connectors, with one or more resilient contacts provided on the second connector. The connector housing has an upper surface and an oppositely facing lower surface and is dimensioned to receive a first end portion of the one or more contacts. The contacts are flexible from a first position to a second position when a mating portion of the one or more contacts engages a mating connection surface of the filter housing assembly.

Abstract: A communication device comprising: a first unit having a first antenna, a second antenna, and a first signal transmitting and receiving circuitry; a second unit having a third antenna, a fourth antenna, and a second signal transmitting and receiving circuitry, wherein the second unit is located in proximity to the first unit; and wherein the second unit is capable of receiving signals at a first signal frequency, down converting the signals to a second signal frequency, and relaying the signals through a barrier to the first unit. Wherein the first signal frequency is in the millimeter wave range and the second signal frequency is in the microwave range.

Abstract: A semiconductor device and method of forming the same are disclosed. The method of forming a semiconductor device includes providing a substrate, an isolation structure over the substrate, and at least two fins extending from the substrate and through the isolation structure; etching the at least two fins, thereby forming at least two trenches; growing first epitaxial features in the at least two trenches; growing second epitaxial features over the first epitaxial features in a first growth condition; and after the second epitaxial features reach a target critical dimension, growing the second epitaxial features in a second growth condition different from the first growth condition.

Abstract: A terahertz metamaterial waveguide and device are provided. The terahertz metamaterial waveguide comprises a subwavelength substrate layer and a metal layer. One surface of the subwavelength substrate layer is plated with the metal layer, and a plurality of periodically-distributed micropores is formed in the metal layer. The subwavelength substrate layer, the metal layer, and the formed plurality of periodically-distributed micropores are described.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.